Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693792
B. Gorman
Many nanoscale material systems require both structural and compositional characterization in order to be able to fully predict their electrical, magnetic, or optoelectronic behaviors. Traditional characterization techniques such as (S)TEM, SIMS, and XPS currently lack either spatial or chemical resolution needed for characterization of nanoscale devices. 3-dimensional atom probe has recently been utilized to determine the chemical and structural abruptness in a variety of materials with sub-nm spatial resolution and ~10ppm chemical resolution. In this talk, recent work utilizing a laser pulsed local electrode atom probe (LEAP) for the characterization of Photovoltaic devices will be illustrated. Specifically, dopant and H depth profiling in <10nm thick a-Si layers has been illustrated with ~1018/ cm3 chemical resolution. Additionally, interfacial abruptness in III¿V PV devices with a quantum well active region is illustrated with <1nm spatial resolution. Grain boundary analysis in metallic and semiconducting materials is also illustrated following site-specific FIB specimen preparation. Finally, transparent conducting oxide top contact layers have been analyzed for phase separation and following direct-write Maskless Mesoscale Materials Deposition (M3D) processing from polymeric precursors. Utilizing the laser pulsed LEAP for the analysis of TCOs also has illustrated the possibilities for analyzing lower conductivity, transparent materials such as dielectrics. The limitations and possible future applications to dielectric and ferroelectric applications will be discussed.
{"title":"Atomic scale chemical and structural characterization of internal interfaces with atom probe tomography","authors":"B. Gorman","doi":"10.1109/ISAF.2008.4693792","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693792","url":null,"abstract":"Many nanoscale material systems require both structural and compositional characterization in order to be able to fully predict their electrical, magnetic, or optoelectronic behaviors. Traditional characterization techniques such as (S)TEM, SIMS, and XPS currently lack either spatial or chemical resolution needed for characterization of nanoscale devices. 3-dimensional atom probe has recently been utilized to determine the chemical and structural abruptness in a variety of materials with sub-nm spatial resolution and ~10ppm chemical resolution. In this talk, recent work utilizing a laser pulsed local electrode atom probe (LEAP) for the characterization of Photovoltaic devices will be illustrated. Specifically, dopant and H depth profiling in <10nm thick a-Si layers has been illustrated with ~1018/ cm3 chemical resolution. Additionally, interfacial abruptness in III¿V PV devices with a quantum well active region is illustrated with <1nm spatial resolution. Grain boundary analysis in metallic and semiconducting materials is also illustrated following site-specific FIB specimen preparation. Finally, transparent conducting oxide top contact layers have been analyzed for phase separation and following direct-write Maskless Mesoscale Materials Deposition (M3D) processing from polymeric precursors. Utilizing the laser pulsed LEAP for the analysis of TCOs also has illustrated the possibilities for analyzing lower conductivity, transparent materials such as dielectrics. The limitations and possible future applications to dielectric and ferroelectric applications will be discussed.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126318259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693962
W. Ahn, D. Jung, Y.K. Hong, H.H. Kim, Y. Kang, S.K. Kang, H.S. Kim, J. Kim, W. Jung, J. Jung, H. Ko, D. Choi, S.Y. Kim, E.S. Lee, J.Y. Kang, C. Wei, S.Y. Lee, K. A, H. Jung
We present a mimicking methodology to describe device-level endurance in a 1T1C, 64 Mb FRAM (ferroelectric random access memory). Device-level endurance of FRAM must clarify all the issues raised from destructive read-out READ/WRITE. To explore endurance properties in a real-time operational situation, we have established a measurement set-up that covers asymmetric pulse chains corresponding to Data 1 (D1) and Data 0 (D0) READ/RESTORE over a frequency range from 1.0 to 7.7 MHz. The cycle-to-failure of 5.9 × 1024 cycles in an operational condition of 7.7 MHz and 85 °C, has been obtained from extrapolation to VDD = 2.0 V in a voltage acceleration. We compare testing results with those of D1¿D0 populations of bit-line potential.
{"title":"A methodology to characterize device-level endurance in 1T1C (1-transistor and 1-capacitor) FRAM","authors":"W. Ahn, D. Jung, Y.K. Hong, H.H. Kim, Y. Kang, S.K. Kang, H.S. Kim, J. Kim, W. Jung, J. Jung, H. Ko, D. Choi, S.Y. Kim, E.S. Lee, J.Y. Kang, C. Wei, S.Y. Lee, K. A, H. Jung","doi":"10.1109/ISAF.2008.4693962","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693962","url":null,"abstract":"We present a mimicking methodology to describe device-level endurance in a 1T1C, 64 Mb FRAM (ferroelectric random access memory). Device-level endurance of FRAM must clarify all the issues raised from destructive read-out READ/WRITE. To explore endurance properties in a real-time operational situation, we have established a measurement set-up that covers asymmetric pulse chains corresponding to Data 1 (D1) and Data 0 (D0) READ/RESTORE over a frequency range from 1.0 to 7.7 MHz. The cycle-to-failure of 5.9 × 1024 cycles in an operational condition of 7.7 MHz and 85 °C, has been obtained from extrapolation to VDD = 2.0 V in a voltage acceleration. We compare testing results with those of D1¿D0 populations of bit-line potential.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126061156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693794
X. Yu, P. V. Braun
A number of approaches, including holography and self-assembly, have been proposed as pathways to large area periodic structures, however, for many applications, simple self-assembled structures are not sufficient. It remains unclear how to add function to such structures in an efficient fashion, be this introduction of aperiodic features such as optical cavities and waveguides, functional materials including ferroelectrics, metals, and quantum dots, or the incorporation of high refractive index materials, for example Si and GaAs. In this paper I will focus on our latest results on the use of electrochemical deposition to form three-dimensionally periodic structures out of Ni. Details on emission from these structures can be found in [1]. In my lecture, I will also discuss optical manipulation, and DNA-directed assembly as pathways to complex 3D structures.
{"title":"Assembly and functionalization of 3D photonic crystals","authors":"X. Yu, P. V. Braun","doi":"10.1109/ISAF.2008.4693794","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693794","url":null,"abstract":"A number of approaches, including holography and self-assembly, have been proposed as pathways to large area periodic structures, however, for many applications, simple self-assembled structures are not sufficient. It remains unclear how to add function to such structures in an efficient fashion, be this introduction of aperiodic features such as optical cavities and waveguides, functional materials including ferroelectrics, metals, and quantum dots, or the incorporation of high refractive index materials, for example Si and GaAs. In this paper I will focus on our latest results on the use of electrochemical deposition to form three-dimensionally periodic structures out of Ni. Details on emission from these structures can be found in [1]. In my lecture, I will also discuss optical manipulation, and DNA-directed assembly as pathways to complex 3D structures.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124918179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693781
A. Bell, T. Comyn, Mikael A. Khan, T. Stevenson, T. Burnett
Solid solutions of bismuth ferrite - lead titanate are proving to be of interest for a number of applications due to not only the potential for room temperature magnetoelectric coupling, but also due to the anomalous combination of large spontaneous strain and high Curie temperature at the morphotropic phase boundary. Here we report on progress in the magnetic characterization, the development of high temperature piezoelectric devices and the characterization of thin films for FeRAM applications.
{"title":"Structure-property relations in multifunctional bismuth ferrite - lead titanate","authors":"A. Bell, T. Comyn, Mikael A. Khan, T. Stevenson, T. Burnett","doi":"10.1109/ISAF.2008.4693781","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693781","url":null,"abstract":"Solid solutions of bismuth ferrite - lead titanate are proving to be of interest for a number of applications due to not only the potential for room temperature magnetoelectric coupling, but also due to the anomalous combination of large spontaneous strain and high Curie temperature at the morphotropic phase boundary. Here we report on progress in the magnetic characterization, the development of high temperature piezoelectric devices and the characterization of thin films for FeRAM applications.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121492475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693938
Hyun-uk Kim, S. Priya
Piezoelectric energy harvesters are projected to be suitable energy sources for sensors and associated electronics used in industrial health monitoring, and aircraft structural health monitoring. This manuscript outlines the progress in developing the energy harvesting prototypes. It compares the progress made in the realization of piezoelectric microgenerators with that of electromagnetic and electrostatic generators and identifies the parameters that need to be reported in subsequent publications for rationale comparison.
{"title":"Piezoelectric microgenerator - current status, challenges, and applications","authors":"Hyun-uk Kim, S. Priya","doi":"10.1109/ISAF.2008.4693938","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693938","url":null,"abstract":"Piezoelectric energy harvesters are projected to be suitable energy sources for sensors and associated electronics used in industrial health monitoring, and aircraft structural health monitoring. This manuscript outlines the progress in developing the energy harvesting prototypes. It compares the progress made in the realization of piezoelectric microgenerators with that of electromagnetic and electrostatic generators and identifies the parameters that need to be reported in subsequent publications for rationale comparison.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133420624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693767
E. K. Akdoğan, A. Safari
A phenomenological intrinsic finite size effect model for a single domain, mechanically free, and surface charge compensated ABO3 (PbTiO3 or BaTiO3) nanocrystals undergoing a first order tetragonal¿cubic phase transition is propsoed. By using experimental particle size-dependent spontaneous polarization data for PbTiO3 and BaTiO3, free energy expansion coefficients coefficients up to the sixth order as a function of ¿ is computed in the range <150 nm. It will be shown that the thermodynamic potential is able to predict the size-induced phase transition as well as the metastable tetragonal phase in the cubic phase field rigorously. The free energy surface is then contructed, which describes the decrease in tetragonal phase stability with decreasing ¿ rigorously. The intrinsic dielectric and piezoelectric properties of single domain, mechanically free, and surface charge compensated PbTiO3 nanocrystals are then evaluated. It will be shown that a decrease in dielectric susceptibility at the transition temperature with decreasing particle size is commensurate with predictions of lattice dynamics considerations. It will also be shown that an anomalous increase in piezocharge coefficients near ~15 nm is predicted. Finite size effects will then be discusssed in terms of depolarization fields, surface effects, role of defects, among others and salient aspects of myths & facts in the published literature will be analyzed.
{"title":"Finite size effects in ferroelectric nanocrystals: Myths & facts","authors":"E. K. Akdoğan, A. Safari","doi":"10.1109/ISAF.2008.4693767","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693767","url":null,"abstract":"A phenomenological intrinsic finite size effect model for a single domain, mechanically free, and surface charge compensated ABO3 (PbTiO3 or BaTiO3) nanocrystals undergoing a first order tetragonal¿cubic phase transition is propsoed. By using experimental particle size-dependent spontaneous polarization data for PbTiO3 and BaTiO3, free energy expansion coefficients coefficients up to the sixth order as a function of ¿ is computed in the range <150 nm. It will be shown that the thermodynamic potential is able to predict the size-induced phase transition as well as the metastable tetragonal phase in the cubic phase field rigorously. The free energy surface is then contructed, which describes the decrease in tetragonal phase stability with decreasing ¿ rigorously. The intrinsic dielectric and piezoelectric properties of single domain, mechanically free, and surface charge compensated PbTiO3 nanocrystals are then evaluated. It will be shown that a decrease in dielectric susceptibility at the transition temperature with decreasing particle size is commensurate with predictions of lattice dynamics considerations. It will also be shown that an anomalous increase in piezocharge coefficients near ~15 nm is predicted. Finite size effects will then be discusssed in terms of depolarization fields, surface effects, role of defects, among others and salient aspects of myths & facts in the published literature will be analyzed.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"270 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134175119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693823
M. Adachi, K. Takeuchi, T. Karaki
(K,Li)NbO3 single crystals were successfully grown from a melt with potassium enriched composition under the condition of shallow temperature gradient using the TSSG technique. The growth was along the ¿100¿ direction in the pseudo-cubic phase. The crystal was allowed to grow laterally from around 10¿30h to obtain the cross section desired. The growing crystal was then lifted up above the melt surface or lifted intermittently at the rate of about 4mm/h, while the melt was cooled. Cracking occurred at the phase transition temperatures of 457 and 220°C for (K,Li)NbO3. Slow cooling fairly eliminated the cracking at the both phase transition points. The completeness of the poling was checked by the dielectric measurements. After poling, the dielectric constant reduced to be around 150.
{"title":"Growth of potassium lithium niobate-tantalate single crystal for piezoelectric applications","authors":"M. Adachi, K. Takeuchi, T. Karaki","doi":"10.1109/ISAF.2008.4693823","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693823","url":null,"abstract":"(K,Li)NbO3 single crystals were successfully grown from a melt with potassium enriched composition under the condition of shallow temperature gradient using the TSSG technique. The growth was along the ¿100¿ direction in the pseudo-cubic phase. The crystal was allowed to grow laterally from around 10¿30h to obtain the cross section desired. The growing crystal was then lifted up above the melt surface or lifted intermittently at the rate of about 4mm/h, while the melt was cooled. Cracking occurred at the phase transition temperatures of 457 and 220°C for (K,Li)NbO3. Slow cooling fairly eliminated the cracking at the both phase transition points. The completeness of the poling was checked by the dielectric measurements. After poling, the dielectric constant reduced to be around 150.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115641693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693873
M. Zipparo
Arrays optimized for conventional B-mode imaging applications are often limited in their ability to transmit power into the body, not by acoustic intensity limits but by face temperature maximums. Furthermore, new imaging modalities that use a long train of transmit pulses to remotely deposit a localized force on tissue are even more limited by array thermal considerations. Losses within the piezoceramic material are an important source of heat generation. Simply replacing the piezo material by one with lower losses will result in poorer imaging performance due to the physical properties and coarser microstructure of most low loss materials. This work describes the use of low loss piezoceramics exhibiting a microstructure that is ideal for forming into fine scale ultrasound arrays. Incorporating this material into multilayer ceramic and composite structures is shown to be an effective way to ameliorate the limitations of the base piezo and result in arrays with acoustic tank and imaging performance that is as good as or better than conventional imaging arrays made using a single layer of a conventional piezo. These arrays are also shown to exhibit reduced heating under equivalent electrical input power.
{"title":"Ultrasound imaging arrays with improved transmit power capability","authors":"M. Zipparo","doi":"10.1109/ISAF.2008.4693873","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693873","url":null,"abstract":"Arrays optimized for conventional B-mode imaging applications are often limited in their ability to transmit power into the body, not by acoustic intensity limits but by face temperature maximums. Furthermore, new imaging modalities that use a long train of transmit pulses to remotely deposit a localized force on tissue are even more limited by array thermal considerations. Losses within the piezoceramic material are an important source of heat generation. Simply replacing the piezo material by one with lower losses will result in poorer imaging performance due to the physical properties and coarser microstructure of most low loss materials. This work describes the use of low loss piezoceramics exhibiting a microstructure that is ideal for forming into fine scale ultrasound arrays. Incorporating this material into multilayer ceramic and composite structures is shown to be an effective way to ameliorate the limitations of the base piezo and result in arrays with acoustic tank and imaging performance that is as good as or better than conventional imaging arrays made using a single layer of a conventional piezo. These arrays are also shown to exhibit reduced heating under equivalent electrical input power.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117273087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693919
M. Morozov, D. Lupascu, Dragan Damjanovic
Two different scenarios of aging effect in perovskyte ferroelectrics are compared qualitatively and examined experimentally in Fe-doped Pb(Zr0.58Ti0.42)O3 (PZT) ceramics using dielectric spectroscopy.
{"title":"Mechanisms of aging in ferroelectrics: The orientation of dipoles versus the charge drift","authors":"M. Morozov, D. Lupascu, Dragan Damjanovic","doi":"10.1109/ISAF.2008.4693919","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693919","url":null,"abstract":"Two different scenarios of aging effect in perovskyte ferroelectrics are compared qualitatively and examined experimentally in Fe-doped Pb(Zr0.58Ti0.42)O3 (PZT) ceramics using dielectric spectroscopy.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115777819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693900
R. M. Valdes, R. Palai, R. Katiyar
Ba1-xSr3TiO3 (BSTO) is a suitable material for microelectronic device applications due to its high response of the dielectric permittivity an applied electric filed. We have investigated crystal structure, dielectric response, electrical conduction and ferroelectric properties of BSTO. Sol gel and solid state processing were used as routes for the synthesis of BSTO ceramics. The microstructures including grain size and phase analysis have been examined using SEM, X-ray diffraction, and Raman Spectroscopy. The chemical characterization was measured by EDS. From the temperature dependence of measured relative permittivity, loss tangent and, tunability at frequencies between 1 KHz to 1 MHz, the ferroelectric phase transition of BSTO-sg (x=0.4) was observed in ~ 238K, BST-ss (x=0.4) in 267K, and BST-sg & BST-ss (x=0.3) were observed both in ~312K.
{"title":"Structural, dielectric, electric, and ferroelectric properties of different routes derived of Ba1-xSrxTiO3 (BSTO) ceramic","authors":"R. M. Valdes, R. Palai, R. Katiyar","doi":"10.1109/ISAF.2008.4693900","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693900","url":null,"abstract":"Ba1-xSr3TiO3 (BSTO) is a suitable material for microelectronic device applications due to its high response of the dielectric permittivity an applied electric filed. We have investigated crystal structure, dielectric response, electrical conduction and ferroelectric properties of BSTO. Sol gel and solid state processing were used as routes for the synthesis of BSTO ceramics. The microstructures including grain size and phase analysis have been examined using SEM, X-ray diffraction, and Raman Spectroscopy. The chemical characterization was measured by EDS. From the temperature dependence of measured relative permittivity, loss tangent and, tunability at frequencies between 1 KHz to 1 MHz, the ferroelectric phase transition of BSTO-sg (x=0.4) was observed in ~ 238K, BST-ss (x=0.4) in 267K, and BST-sg & BST-ss (x=0.3) were observed both in ~312K.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122949829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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