Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693792
B. Gorman
Many nanoscale material systems require both structural and compositional characterization in order to be able to fully predict their electrical, magnetic, or optoelectronic behaviors. Traditional characterization techniques such as (S)TEM, SIMS, and XPS currently lack either spatial or chemical resolution needed for characterization of nanoscale devices. 3-dimensional atom probe has recently been utilized to determine the chemical and structural abruptness in a variety of materials with sub-nm spatial resolution and ~10ppm chemical resolution. In this talk, recent work utilizing a laser pulsed local electrode atom probe (LEAP) for the characterization of Photovoltaic devices will be illustrated. Specifically, dopant and H depth profiling in <10nm thick a-Si layers has been illustrated with ~1018/ cm3 chemical resolution. Additionally, interfacial abruptness in III¿V PV devices with a quantum well active region is illustrated with <1nm spatial resolution. Grain boundary analysis in metallic and semiconducting materials is also illustrated following site-specific FIB specimen preparation. Finally, transparent conducting oxide top contact layers have been analyzed for phase separation and following direct-write Maskless Mesoscale Materials Deposition (M3D) processing from polymeric precursors. Utilizing the laser pulsed LEAP for the analysis of TCOs also has illustrated the possibilities for analyzing lower conductivity, transparent materials such as dielectrics. The limitations and possible future applications to dielectric and ferroelectric applications will be discussed.
{"title":"Atomic scale chemical and structural characterization of internal interfaces with atom probe tomography","authors":"B. Gorman","doi":"10.1109/ISAF.2008.4693792","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693792","url":null,"abstract":"Many nanoscale material systems require both structural and compositional characterization in order to be able to fully predict their electrical, magnetic, or optoelectronic behaviors. Traditional characterization techniques such as (S)TEM, SIMS, and XPS currently lack either spatial or chemical resolution needed for characterization of nanoscale devices. 3-dimensional atom probe has recently been utilized to determine the chemical and structural abruptness in a variety of materials with sub-nm spatial resolution and ~10ppm chemical resolution. In this talk, recent work utilizing a laser pulsed local electrode atom probe (LEAP) for the characterization of Photovoltaic devices will be illustrated. Specifically, dopant and H depth profiling in <10nm thick a-Si layers has been illustrated with ~1018/ cm3 chemical resolution. Additionally, interfacial abruptness in III¿V PV devices with a quantum well active region is illustrated with <1nm spatial resolution. Grain boundary analysis in metallic and semiconducting materials is also illustrated following site-specific FIB specimen preparation. Finally, transparent conducting oxide top contact layers have been analyzed for phase separation and following direct-write Maskless Mesoscale Materials Deposition (M3D) processing from polymeric precursors. Utilizing the laser pulsed LEAP for the analysis of TCOs also has illustrated the possibilities for analyzing lower conductivity, transparent materials such as dielectrics. The limitations and possible future applications to dielectric and ferroelectric applications will be discussed.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126318259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693962
W. Ahn, D. Jung, Y.K. Hong, H.H. Kim, Y. Kang, S.K. Kang, H.S. Kim, J. Kim, W. Jung, J. Jung, H. Ko, D. Choi, S.Y. Kim, E.S. Lee, J.Y. Kang, C. Wei, S.Y. Lee, K. A, H. Jung
We present a mimicking methodology to describe device-level endurance in a 1T1C, 64 Mb FRAM (ferroelectric random access memory). Device-level endurance of FRAM must clarify all the issues raised from destructive read-out READ/WRITE. To explore endurance properties in a real-time operational situation, we have established a measurement set-up that covers asymmetric pulse chains corresponding to Data 1 (D1) and Data 0 (D0) READ/RESTORE over a frequency range from 1.0 to 7.7 MHz. The cycle-to-failure of 5.9 × 1024 cycles in an operational condition of 7.7 MHz and 85 °C, has been obtained from extrapolation to VDD = 2.0 V in a voltage acceleration. We compare testing results with those of D1¿D0 populations of bit-line potential.
{"title":"A methodology to characterize device-level endurance in 1T1C (1-transistor and 1-capacitor) FRAM","authors":"W. Ahn, D. Jung, Y.K. Hong, H.H. Kim, Y. Kang, S.K. Kang, H.S. Kim, J. Kim, W. Jung, J. Jung, H. Ko, D. Choi, S.Y. Kim, E.S. Lee, J.Y. Kang, C. Wei, S.Y. Lee, K. A, H. Jung","doi":"10.1109/ISAF.2008.4693962","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693962","url":null,"abstract":"We present a mimicking methodology to describe device-level endurance in a 1T1C, 64 Mb FRAM (ferroelectric random access memory). Device-level endurance of FRAM must clarify all the issues raised from destructive read-out READ/WRITE. To explore endurance properties in a real-time operational situation, we have established a measurement set-up that covers asymmetric pulse chains corresponding to Data 1 (D1) and Data 0 (D0) READ/RESTORE over a frequency range from 1.0 to 7.7 MHz. The cycle-to-failure of 5.9 × 1024 cycles in an operational condition of 7.7 MHz and 85 °C, has been obtained from extrapolation to VDD = 2.0 V in a voltage acceleration. We compare testing results with those of D1¿D0 populations of bit-line potential.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126061156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693794
X. Yu, P. V. Braun
A number of approaches, including holography and self-assembly, have been proposed as pathways to large area periodic structures, however, for many applications, simple self-assembled structures are not sufficient. It remains unclear how to add function to such structures in an efficient fashion, be this introduction of aperiodic features such as optical cavities and waveguides, functional materials including ferroelectrics, metals, and quantum dots, or the incorporation of high refractive index materials, for example Si and GaAs. In this paper I will focus on our latest results on the use of electrochemical deposition to form three-dimensionally periodic structures out of Ni. Details on emission from these structures can be found in [1]. In my lecture, I will also discuss optical manipulation, and DNA-directed assembly as pathways to complex 3D structures.
{"title":"Assembly and functionalization of 3D photonic crystals","authors":"X. Yu, P. V. Braun","doi":"10.1109/ISAF.2008.4693794","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693794","url":null,"abstract":"A number of approaches, including holography and self-assembly, have been proposed as pathways to large area periodic structures, however, for many applications, simple self-assembled structures are not sufficient. It remains unclear how to add function to such structures in an efficient fashion, be this introduction of aperiodic features such as optical cavities and waveguides, functional materials including ferroelectrics, metals, and quantum dots, or the incorporation of high refractive index materials, for example Si and GaAs. In this paper I will focus on our latest results on the use of electrochemical deposition to form three-dimensionally periodic structures out of Ni. Details on emission from these structures can be found in [1]. In my lecture, I will also discuss optical manipulation, and DNA-directed assembly as pathways to complex 3D structures.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124918179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693781
A. Bell, T. Comyn, Mikael A. Khan, T. Stevenson, T. Burnett
Solid solutions of bismuth ferrite - lead titanate are proving to be of interest for a number of applications due to not only the potential for room temperature magnetoelectric coupling, but also due to the anomalous combination of large spontaneous strain and high Curie temperature at the morphotropic phase boundary. Here we report on progress in the magnetic characterization, the development of high temperature piezoelectric devices and the characterization of thin films for FeRAM applications.
{"title":"Structure-property relations in multifunctional bismuth ferrite - lead titanate","authors":"A. Bell, T. Comyn, Mikael A. Khan, T. Stevenson, T. Burnett","doi":"10.1109/ISAF.2008.4693781","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693781","url":null,"abstract":"Solid solutions of bismuth ferrite - lead titanate are proving to be of interest for a number of applications due to not only the potential for room temperature magnetoelectric coupling, but also due to the anomalous combination of large spontaneous strain and high Curie temperature at the morphotropic phase boundary. Here we report on progress in the magnetic characterization, the development of high temperature piezoelectric devices and the characterization of thin films for FeRAM applications.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121492475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693938
Hyun-uk Kim, S. Priya
Piezoelectric energy harvesters are projected to be suitable energy sources for sensors and associated electronics used in industrial health monitoring, and aircraft structural health monitoring. This manuscript outlines the progress in developing the energy harvesting prototypes. It compares the progress made in the realization of piezoelectric microgenerators with that of electromagnetic and electrostatic generators and identifies the parameters that need to be reported in subsequent publications for rationale comparison.
{"title":"Piezoelectric microgenerator - current status, challenges, and applications","authors":"Hyun-uk Kim, S. Priya","doi":"10.1109/ISAF.2008.4693938","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693938","url":null,"abstract":"Piezoelectric energy harvesters are projected to be suitable energy sources for sensors and associated electronics used in industrial health monitoring, and aircraft structural health monitoring. This manuscript outlines the progress in developing the energy harvesting prototypes. It compares the progress made in the realization of piezoelectric microgenerators with that of electromagnetic and electrostatic generators and identifies the parameters that need to be reported in subsequent publications for rationale comparison.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133420624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693767
E. K. Akdoğan, A. Safari
A phenomenological intrinsic finite size effect model for a single domain, mechanically free, and surface charge compensated ABO3 (PbTiO3 or BaTiO3) nanocrystals undergoing a first order tetragonal¿cubic phase transition is propsoed. By using experimental particle size-dependent spontaneous polarization data for PbTiO3 and BaTiO3, free energy expansion coefficients coefficients up to the sixth order as a function of ¿ is computed in the range <150 nm. It will be shown that the thermodynamic potential is able to predict the size-induced phase transition as well as the metastable tetragonal phase in the cubic phase field rigorously. The free energy surface is then contructed, which describes the decrease in tetragonal phase stability with decreasing ¿ rigorously. The intrinsic dielectric and piezoelectric properties of single domain, mechanically free, and surface charge compensated PbTiO3 nanocrystals are then evaluated. It will be shown that a decrease in dielectric susceptibility at the transition temperature with decreasing particle size is commensurate with predictions of lattice dynamics considerations. It will also be shown that an anomalous increase in piezocharge coefficients near ~15 nm is predicted. Finite size effects will then be discusssed in terms of depolarization fields, surface effects, role of defects, among others and salient aspects of myths & facts in the published literature will be analyzed.
{"title":"Finite size effects in ferroelectric nanocrystals: Myths & facts","authors":"E. K. Akdoğan, A. Safari","doi":"10.1109/ISAF.2008.4693767","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693767","url":null,"abstract":"A phenomenological intrinsic finite size effect model for a single domain, mechanically free, and surface charge compensated ABO3 (PbTiO3 or BaTiO3) nanocrystals undergoing a first order tetragonal¿cubic phase transition is propsoed. By using experimental particle size-dependent spontaneous polarization data for PbTiO3 and BaTiO3, free energy expansion coefficients coefficients up to the sixth order as a function of ¿ is computed in the range <150 nm. It will be shown that the thermodynamic potential is able to predict the size-induced phase transition as well as the metastable tetragonal phase in the cubic phase field rigorously. The free energy surface is then contructed, which describes the decrease in tetragonal phase stability with decreasing ¿ rigorously. The intrinsic dielectric and piezoelectric properties of single domain, mechanically free, and surface charge compensated PbTiO3 nanocrystals are then evaluated. It will be shown that a decrease in dielectric susceptibility at the transition temperature with decreasing particle size is commensurate with predictions of lattice dynamics considerations. It will also be shown that an anomalous increase in piezocharge coefficients near ~15 nm is predicted. Finite size effects will then be discusssed in terms of depolarization fields, surface effects, role of defects, among others and salient aspects of myths & facts in the published literature will be analyzed.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"270 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134175119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693766
Junwoo Son, S. Stemmer
In this presentation we report on the influence of dielectric relaxation on the thermal leakage characteristics of Pt/SrTiO3/Pt thin film structures. We study the influence of temperature and time-dependent leakage currents on recently reported phenomena such as anomalous positive temperature coefficient of resistivity and resistive switching behavior. SrTiO3 was chosen as a model thin film because the dielectric relaxation is not influenced by ferroelectric polarization, as, for example, for (Ba,Sr)TiO3 thin films. We have measured the leakage currents of sputtered, strongly (110) textured SrTiO3 thin films with Pt top and bottom electrodes as a function of time, film thickness, bias field and temperature. We show that apparent dielectric relaxation times decrease with film thickness and increasing temperature and ranged between 1 Ç¿Ï 100 seconds. We show that hysteresis in the I¿V characteristics is strongly correlated with the non-steady state characteristics of the electrical characteristics. The sign of the applied bias field influenced both dielectric relaxation times and hysteresis, reflecting different trap state distributions near bottom and top contacts and/or different barrier heights. Measurements of the leakage currents under applied bias fields as a function of temperature showed distinctive peak was observed around 260K that could be correlated with non-steady state current. We show that for thick films results can be interpreted in terms of trapping/detrapping in the ! depletion region of the blocking contacts. Finally we report on the influence of oxygen vacancies on the hysteresis of the I¿V characteristics and non-steady state current.
{"title":"Influence of dielectric relaxation on thermal electrical characteristics of SrTiO3 thin films with Pt electrodes","authors":"Junwoo Son, S. Stemmer","doi":"10.1109/ISAF.2008.4693766","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693766","url":null,"abstract":"In this presentation we report on the influence of dielectric relaxation on the thermal leakage characteristics of Pt/SrTiO3/Pt thin film structures. We study the influence of temperature and time-dependent leakage currents on recently reported phenomena such as anomalous positive temperature coefficient of resistivity and resistive switching behavior. SrTiO3 was chosen as a model thin film because the dielectric relaxation is not influenced by ferroelectric polarization, as, for example, for (Ba,Sr)TiO3 thin films. We have measured the leakage currents of sputtered, strongly (110) textured SrTiO3 thin films with Pt top and bottom electrodes as a function of time, film thickness, bias field and temperature. We show that apparent dielectric relaxation times decrease with film thickness and increasing temperature and ranged between 1 Ç¿Ï 100 seconds. We show that hysteresis in the I¿V characteristics is strongly correlated with the non-steady state characteristics of the electrical characteristics. The sign of the applied bias field influenced both dielectric relaxation times and hysteresis, reflecting different trap state distributions near bottom and top contacts and/or different barrier heights. Measurements of the leakage currents under applied bias fields as a function of temperature showed distinctive peak was observed around 260K that could be correlated with non-steady state current. We show that for thick films results can be interpreted in terms of trapping/detrapping in the ! depletion region of the blocking contacts. Finally we report on the influence of oxygen vacancies on the hysteresis of the I¿V characteristics and non-steady state current.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125659986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693919
M. Morozov, D. Lupascu, Dragan Damjanovic
Two different scenarios of aging effect in perovskyte ferroelectrics are compared qualitatively and examined experimentally in Fe-doped Pb(Zr0.58Ti0.42)O3 (PZT) ceramics using dielectric spectroscopy.
{"title":"Mechanisms of aging in ferroelectrics: The orientation of dipoles versus the charge drift","authors":"M. Morozov, D. Lupascu, Dragan Damjanovic","doi":"10.1109/ISAF.2008.4693919","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693919","url":null,"abstract":"Two different scenarios of aging effect in perovskyte ferroelectrics are compared qualitatively and examined experimentally in Fe-doped Pb(Zr0.58Ti0.42)O3 (PZT) ceramics using dielectric spectroscopy.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115777819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693736
Xiaobing Shan, Peixuan Wu, Z.Y. Cheng
The development of high-k composites based on CaCu3Ti4O12 (CCTO) ceramic powder is reported. The CCTO ceramic powders were prepared by traditional sintering method and were milled with a relative uniform size. Based on solution casting method, the composite using P(VDF-TrFE) copolymer as matrix and CCTO powders as filler were prepared and its dielectric response were characterized. The dielectric properties of the 0¿3 composite with micro-size and nano-size CCTO particle, as well as different polymer matrixes were determined. The 0¿3 composites exhibit a very high dielectric constant, more than 1700 at 1 kHz at room temperature after surface modification.
{"title":"Paper ID: HP006","authors":"Xiaobing Shan, Peixuan Wu, Z.Y. Cheng","doi":"10.1109/ISAF.2008.4693736","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693736","url":null,"abstract":"The development of high-k composites based on CaCu3Ti4O12 (CCTO) ceramic powder is reported. The CCTO ceramic powders were prepared by traditional sintering method and were milled with a relative uniform size. Based on solution casting method, the composite using P(VDF-TrFE) copolymer as matrix and CCTO powders as filler were prepared and its dielectric response were characterized. The dielectric properties of the 0¿3 composite with micro-size and nano-size CCTO particle, as well as different polymer matrixes were determined. The 0¿3 composites exhibit a very high dielectric constant, more than 1700 at 1 kHz at room temperature after surface modification.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134306121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693816
M. Winter, C. Diantonio, N. Bell, M. Rodriguez, G. Samara, P. Yang, G. Burns, T. Chavez, A. Blea
Increasing concern surrounding the use of lead in consumer products has stimulated research to identify candidates to replace lead-based materials used in many commercial applications. To be integrated into commercial products; however, a lead-free replacement must be fabricated using common industrial techniques while maintaining dielectric properties equivalent to the current lead-based systems. Texturing has been shown to dramatically enhance the dielectric properties of lead-free materials such that several potential systems are now being considered as replacements for the current lead-based materials. In this work, a large degree of texturing has been introduced to bismuth titanium oxide bulk samples through the process of screen printing large, plate-like seeds in a matrix of equi-axial powder. The degree of texturing achieved gives rise to a high probability of excellent dielectric properties, making textured bismuth titanate a viable replacement for commercial lead-based dielectrics.
{"title":"PI017 - thick film texturing to enhance the properties of lead-free ferroelectric materials","authors":"M. Winter, C. Diantonio, N. Bell, M. Rodriguez, G. Samara, P. Yang, G. Burns, T. Chavez, A. Blea","doi":"10.1109/ISAF.2008.4693816","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693816","url":null,"abstract":"Increasing concern surrounding the use of lead in consumer products has stimulated research to identify candidates to replace lead-based materials used in many commercial applications. To be integrated into commercial products; however, a lead-free replacement must be fabricated using common industrial techniques while maintaining dielectric properties equivalent to the current lead-based systems. Texturing has been shown to dramatically enhance the dielectric properties of lead-free materials such that several potential systems are now being considered as replacements for the current lead-based materials. In this work, a large degree of texturing has been introduced to bismuth titanium oxide bulk samples through the process of screen printing large, plate-like seeds in a matrix of equi-axial powder. The degree of texturing achieved gives rise to a high probability of excellent dielectric properties, making textured bismuth titanate a viable replacement for commercial lead-based dielectrics.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132348543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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