Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693907
R. Nath, N. Polomoff, J. Bosse, Y. Chu, R. Ramesh, B. Huey
High Speed Piezo Force Microscopy (HSPFM) is a new variation of Atomic Force Miroscopy (AFM) for direct nanoscale measurements of domain switching dynamics. Image acquisition is accelerated from several minutes for standard piezo force microscopy to as fast as a fraction of a second for HSPFM. Movies of consecutive images during in-situ domain switching therefore allow high spatial and temporal resolution, with less than 500 nanosecond poling per pixel achieved. The influence of individual defects on domain nucleation, growth mechanisms, switching speed, and switching energy are therefore uniquely apparent.
{"title":"High Speed Piezo Force Microscopy: Nanoscale and nanosecond direct observations of domain switching","authors":"R. Nath, N. Polomoff, J. Bosse, Y. Chu, R. Ramesh, B. Huey","doi":"10.1109/ISAF.2008.4693907","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693907","url":null,"abstract":"High Speed Piezo Force Microscopy (HSPFM) is a new variation of Atomic Force Miroscopy (AFM) for direct nanoscale measurements of domain switching dynamics. Image acquisition is accelerated from several minutes for standard piezo force microscopy to as fast as a fraction of a second for HSPFM. Movies of consecutive images during in-situ domain switching therefore allow high spatial and temporal resolution, with less than 500 nanosecond poling per pixel achieved. The influence of individual defects on domain nucleation, growth mechanisms, switching speed, and switching energy are therefore uniquely apparent.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127952858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693906
P. Ketsuwan, C. C. Huang, S. Ananta, R. Yimnirun, D. Cann
The Ba(Zn1/3Nb2/3)0.75Ti0.25O3 ceramic was prepared by a conventional mixed oxide. The thermal analysis (TG-DTA) and x-ray diffraction were used for investigating of phases formation. A pure phase of BaZn1/3Nb2/3O3 was obtained and revealed microwave dielectric behavior.
{"title":"Phase formation and dielectric properties of Ba(Zn1/3Nb2/3)0.75Ti0.25O3 ceramic","authors":"P. Ketsuwan, C. C. Huang, S. Ananta, R. Yimnirun, D. Cann","doi":"10.1109/ISAF.2008.4693906","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693906","url":null,"abstract":"The Ba(Zn1/3Nb2/3)0.75Ti0.25O3 ceramic was prepared by a conventional mixed oxide. The thermal analysis (TG-DTA) and x-ray diffraction were used for investigating of phases formation. A pure phase of BaZn1/3Nb2/3O3 was obtained and revealed microwave dielectric behavior.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116842660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693816
M. Winter, C. Diantonio, N. Bell, M. Rodriguez, G. Samara, P. Yang, G. Burns, T. Chavez, A. Blea
Increasing concern surrounding the use of lead in consumer products has stimulated research to identify candidates to replace lead-based materials used in many commercial applications. To be integrated into commercial products; however, a lead-free replacement must be fabricated using common industrial techniques while maintaining dielectric properties equivalent to the current lead-based systems. Texturing has been shown to dramatically enhance the dielectric properties of lead-free materials such that several potential systems are now being considered as replacements for the current lead-based materials. In this work, a large degree of texturing has been introduced to bismuth titanium oxide bulk samples through the process of screen printing large, plate-like seeds in a matrix of equi-axial powder. The degree of texturing achieved gives rise to a high probability of excellent dielectric properties, making textured bismuth titanate a viable replacement for commercial lead-based dielectrics.
{"title":"PI017 - thick film texturing to enhance the properties of lead-free ferroelectric materials","authors":"M. Winter, C. Diantonio, N. Bell, M. Rodriguez, G. Samara, P. Yang, G. Burns, T. Chavez, A. Blea","doi":"10.1109/ISAF.2008.4693816","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693816","url":null,"abstract":"Increasing concern surrounding the use of lead in consumer products has stimulated research to identify candidates to replace lead-based materials used in many commercial applications. To be integrated into commercial products; however, a lead-free replacement must be fabricated using common industrial techniques while maintaining dielectric properties equivalent to the current lead-based systems. Texturing has been shown to dramatically enhance the dielectric properties of lead-free materials such that several potential systems are now being considered as replacements for the current lead-based materials. In this work, a large degree of texturing has been introduced to bismuth titanium oxide bulk samples through the process of screen printing large, plate-like seeds in a matrix of equi-axial powder. The degree of texturing achieved gives rise to a high probability of excellent dielectric properties, making textured bismuth titanate a viable replacement for commercial lead-based dielectrics.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132348543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693888
J. B. Lim, S. Zhang, N. Kim, T. Shrout
(1¿x)[0.4BiScO3¿0.6BaTiO3] + x (K1/2Bi1/2)TiO3 [BSBT-KBTx] ceramics in the perovskite solid solution system were studied for potential high temperature capacitor applications. The diectric properties of BSBT-KBTx ceramics were investigated as a function temperature and frequency. The BSBT-KBTx ceramics showed high dielectric permittivity (> 1000 @RT) and low dielectric loss over the temperature range from 100 ~ 300°C with a flat temperature coefficient (TCC). In addition, BSBT-KBTx ceramics were observed to possess a dielectric relaxation at temperatures (> 300 K). Polarization measurements as a function of electric field showed high energy storage densities with 1.8 J/cm3 at 120 kV/cm. Therefore, dielectrics in this novel ternary system appear to be promising candidates for high temperature and energy storage capacitors.
{"title":"Dielectric behavior in the BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system","authors":"J. B. Lim, S. Zhang, N. Kim, T. Shrout","doi":"10.1109/ISAF.2008.4693888","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693888","url":null,"abstract":"(1¿x)[0.4BiScO3¿0.6BaTiO3] + x (K1/2Bi1/2)TiO3 [BSBT-KBTx] ceramics in the perovskite solid solution system were studied for potential high temperature capacitor applications. The diectric properties of BSBT-KBTx ceramics were investigated as a function temperature and frequency. The BSBT-KBTx ceramics showed high dielectric permittivity (> 1000 @RT) and low dielectric loss over the temperature range from 100 ~ 300°C with a flat temperature coefficient (TCC). In addition, BSBT-KBTx ceramics were observed to possess a dielectric relaxation at temperatures (> 300 K). Polarization measurements as a function of electric field showed high energy storage densities with 1.8 J/cm3 at 120 kV/cm. Therefore, dielectrics in this novel ternary system appear to be promising candidates for high temperature and energy storage capacitors.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128080838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693909
N. Balke, P. Yu, L. Wang, R. Ramesh
Retention properties of written nanodots for Pb(Zr0.2Ti0.8)O3 have been investigated. The imaging voltage plays an important role when investigating small unstable domains. Even with an imaging voltage far below the coercive voltage the boundaries of the domains are switched during imaging by what the measured nanodomain stability is strongly influenced
{"title":"CH003: Stability of nanodots in ferroelectric thin films","authors":"N. Balke, P. Yu, L. Wang, R. Ramesh","doi":"10.1109/ISAF.2008.4693909","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693909","url":null,"abstract":"Retention properties of written nanodots for Pb(Zr0.2Ti0.8)O3 have been investigated. The imaging voltage plays an important role when investigating small unstable domains. Even with an imaging voltage far below the coercive voltage the boundaries of the domains are switched during imaging by what the measured nanodomain stability is strongly influenced","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131835587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693736
Xiaobing Shan, Peixuan Wu, Z.Y. Cheng
The development of high-k composites based on CaCu3Ti4O12 (CCTO) ceramic powder is reported. The CCTO ceramic powders were prepared by traditional sintering method and were milled with a relative uniform size. Based on solution casting method, the composite using P(VDF-TrFE) copolymer as matrix and CCTO powders as filler were prepared and its dielectric response were characterized. The dielectric properties of the 0¿3 composite with micro-size and nano-size CCTO particle, as well as different polymer matrixes were determined. The 0¿3 composites exhibit a very high dielectric constant, more than 1700 at 1 kHz at room temperature after surface modification.
{"title":"Paper ID: HP006","authors":"Xiaobing Shan, Peixuan Wu, Z.Y. Cheng","doi":"10.1109/ISAF.2008.4693736","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693736","url":null,"abstract":"The development of high-k composites based on CaCu3Ti4O12 (CCTO) ceramic powder is reported. The CCTO ceramic powders were prepared by traditional sintering method and were milled with a relative uniform size. Based on solution casting method, the composite using P(VDF-TrFE) copolymer as matrix and CCTO powders as filler were prepared and its dielectric response were characterized. The dielectric properties of the 0¿3 composite with micro-size and nano-size CCTO particle, as well as different polymer matrixes were determined. The 0¿3 composites exhibit a very high dielectric constant, more than 1700 at 1 kHz at room temperature after surface modification.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134306121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693769
Z. Kutnjak, R. Blinc
I The dielectric, heat capacity, and piezoelectric investigations of PMN-PT crystals show the existence of a line of critical points for the paraelectric to ferroelectric transformations in the composition-temperature-electric field (x-T-E) phase diagram. On approaching the critical point both the enthalpy cost to induce the intermediate monoclinic states and thus the barier for polarization rotations decrease significantly.
{"title":"Enhancement of the giant electromechanical response in relaxor ferroelectrics due to the critical point proximity","authors":"Z. Kutnjak, R. Blinc","doi":"10.1109/ISAF.2008.4693769","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693769","url":null,"abstract":"I The dielectric, heat capacity, and piezoelectric investigations of PMN-PT crystals show the existence of a line of critical points for the paraelectric to ferroelectric transformations in the composition-temperature-electric field (x-T-E) phase diagram. On approaching the critical point both the enthalpy cost to induce the intermediate monoclinic states and thus the barier for polarization rotations decrease significantly.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133013245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693963
S. Summerfelt, John Rodriguez, H. McAdams
Design of ferroelectric memories, F-RAMs, requires an accurate ferroelectric SPICE model. The goal of a good SPICE model is to predict the behavior of the ferroelectric capacitor in the circuit environment.
{"title":"Ferroelectric SPICE model, testing and fitting","authors":"S. Summerfelt, John Rodriguez, H. McAdams","doi":"10.1109/ISAF.2008.4693963","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693963","url":null,"abstract":"Design of ferroelectric memories, F-RAMs, requires an accurate ferroelectric SPICE model. The goal of a good SPICE model is to predict the behavior of the ferroelectric capacitor in the circuit environment.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"152 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133124727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693749
M. Lanagan, K. Rajab, Duck-Ki Kwon, G. Semouchkin, E. Semouchkina, M. Iwasaki
Integrated high frequency devices require high permittivity dielectric materials with low loss as well as low sintering temperatures. Ceramics with higher permittivity (50<¿r<350) than conventional low temperature co-fired ceramics (5 < ¿r < 10) will drive further miniaturization of embedded capacitor components and resonators. For microwave and mmwave frequency systems, new integration concepts will be needed to go beyond traditional packaging of electronic components as frequencies. Recently, metamaterials have been developed from composite structures with high and low permittivity. Metamaterials have the unique ability to steer microwave beams and provide unusual dielectric and magnetic properties.
{"title":"Ceramic dielectric materials for microwave resonator arrays","authors":"M. Lanagan, K. Rajab, Duck-Ki Kwon, G. Semouchkin, E. Semouchkina, M. Iwasaki","doi":"10.1109/ISAF.2008.4693749","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693749","url":null,"abstract":"Integrated high frequency devices require high permittivity dielectric materials with low loss as well as low sintering temperatures. Ceramics with higher permittivity (50<¿r<350) than conventional low temperature co-fired ceramics (5 < ¿r < 10) will drive further miniaturization of embedded capacitor components and resonators. For microwave and mmwave frequency systems, new integration concepts will be needed to go beyond traditional packaging of electronic components as frequencies. Recently, metamaterials have been developed from composite structures with high and low permittivity. Metamaterials have the unique ability to steer microwave beams and provide unusual dielectric and magnetic properties.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131807540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693812
Y. Takayama, N. J. Donnelly, C. Randall
The piezoelectric material composition is PZT-SKN with a Li2CO3 flux. This system has been developed successfully for air-fired actuators in PSU with Ag-Pd alloyed inner electrodes. We tried to control the lead activity by adding higher excess PbO in the formulation. Samples were all sintered at 900°C for 6 hours in PO2 = 5.38×10¿12 atm. With 3.0, 4.0wt% PbO excess addition, we note that density, micro-structure and permittivity are similar and there is a high electro-mechanical performance for example, the high field piezoelectric d33 was ~480pm/V. However, there is some decrease in d33 after the sintering in low PO2 and Rayleigh coefficients shows PO2 to slightly suppressing both the intrinsic and extrinsic contribution to piezoelectric properties. Multilayer actuators with copper inner electrode were successfully fabricated with the PZT-SKN after processing with techniques and materials that have low residual carbon.
{"title":"Piezoelectric actuators with Cu inner electrode","authors":"Y. Takayama, N. J. Donnelly, C. Randall","doi":"10.1109/ISAF.2008.4693812","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693812","url":null,"abstract":"The piezoelectric material composition is PZT-SKN with a Li2CO3 flux. This system has been developed successfully for air-fired actuators in PSU with Ag-Pd alloyed inner electrodes. We tried to control the lead activity by adding higher excess PbO in the formulation. Samples were all sintered at 900°C for 6 hours in PO2 = 5.38×10¿12 atm. With 3.0, 4.0wt% PbO excess addition, we note that density, micro-structure and permittivity are similar and there is a high electro-mechanical performance for example, the high field piezoelectric d33 was ~480pm/V. However, there is some decrease in d33 after the sintering in low PO2 and Rayleigh coefficients shows PO2 to slightly suppressing both the intrinsic and extrinsic contribution to piezoelectric properties. Multilayer actuators with copper inner electrode were successfully fabricated with the PZT-SKN after processing with techniques and materials that have low residual carbon.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123987421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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