Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693814
C. Diantonio, M. Winter, M. Rodriguez, P. Yang, G. Burns, T. Chavez, A. Blea
The investigation of lead-free piezoelectric ceramic compositions has recently gained an increased level of interest due to the efforts to reduce lead based components. The most widely used piezoelectric/ferroelectric ceramic material today, including specialized ceramics for military applications (ex. sonar), consists of PbTiO3-PbZrO3 (i.e. PZT-system). It has become imperative to integrate a processing strategy with a lead-free ferroelectric material capable of competing with or surpassing the properties of lead-based compositions. This work examines the development of optimal processing parameters through texturing and reactive templated grain growth to selectively engineer a polycrystalline ceramic microstructure. It presents how these parameters can affect the electro-mechanical properties for a sodium bismuth titanate based composition. The final properties for all ceramic materials are highly influenced by the processing steps and forming techniques used to construct the bulk ceramic component. Texturally modified ceramic compositions have recently exhibited enhanced properties that, depending on the system, match and even surpass those of an optimum modified lead-based composition. In this work we report on the development and use of a texture induced forming process combined with reactive templated grain growth to produce grain-oriented polycrystalline bulk ceramics. Thermal analysis, x-ray diffraction characterization, microstructure stereology and the dielectric and electromechanical performance will be presented. A processing space has been characterized and mapped in order to drive towards achieving maximized electrical performance for this lead-free system.
{"title":"Textured processing, reactive templated grain growth, and electrical property relationships for sodium bismuth titanate PI015","authors":"C. Diantonio, M. Winter, M. Rodriguez, P. Yang, G. Burns, T. Chavez, A. Blea","doi":"10.1109/ISAF.2008.4693814","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693814","url":null,"abstract":"The investigation of lead-free piezoelectric ceramic compositions has recently gained an increased level of interest due to the efforts to reduce lead based components. The most widely used piezoelectric/ferroelectric ceramic material today, including specialized ceramics for military applications (ex. sonar), consists of PbTiO3-PbZrO3 (i.e. PZT-system). It has become imperative to integrate a processing strategy with a lead-free ferroelectric material capable of competing with or surpassing the properties of lead-based compositions. This work examines the development of optimal processing parameters through texturing and reactive templated grain growth to selectively engineer a polycrystalline ceramic microstructure. It presents how these parameters can affect the electro-mechanical properties for a sodium bismuth titanate based composition. The final properties for all ceramic materials are highly influenced by the processing steps and forming techniques used to construct the bulk ceramic component. Texturally modified ceramic compositions have recently exhibited enhanced properties that, depending on the system, match and even surpass those of an optimum modified lead-based composition. In this work we report on the development and use of a texture induced forming process combined with reactive templated grain growth to produce grain-oriented polycrystalline bulk ceramics. Thermal analysis, x-ray diffraction characterization, microstructure stereology and the dielectric and electromechanical performance will be presented. A processing space has been characterized and mapped in order to drive towards achieving maximized electrical performance for this lead-free system.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123684848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693907
R. Nath, N. Polomoff, J. Bosse, Y. Chu, R. Ramesh, B. Huey
High Speed Piezo Force Microscopy (HSPFM) is a new variation of Atomic Force Miroscopy (AFM) for direct nanoscale measurements of domain switching dynamics. Image acquisition is accelerated from several minutes for standard piezo force microscopy to as fast as a fraction of a second for HSPFM. Movies of consecutive images during in-situ domain switching therefore allow high spatial and temporal resolution, with less than 500 nanosecond poling per pixel achieved. The influence of individual defects on domain nucleation, growth mechanisms, switching speed, and switching energy are therefore uniquely apparent.
{"title":"High Speed Piezo Force Microscopy: Nanoscale and nanosecond direct observations of domain switching","authors":"R. Nath, N. Polomoff, J. Bosse, Y. Chu, R. Ramesh, B. Huey","doi":"10.1109/ISAF.2008.4693907","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693907","url":null,"abstract":"High Speed Piezo Force Microscopy (HSPFM) is a new variation of Atomic Force Miroscopy (AFM) for direct nanoscale measurements of domain switching dynamics. Image acquisition is accelerated from several minutes for standard piezo force microscopy to as fast as a fraction of a second for HSPFM. Movies of consecutive images during in-situ domain switching therefore allow high spatial and temporal resolution, with less than 500 nanosecond poling per pixel achieved. The influence of individual defects on domain nucleation, growth mechanisms, switching speed, and switching energy are therefore uniquely apparent.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127952858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693829
Jaehyuk Park, J. Akedo
We demonstrate a fabrication of ferroelectric optical nanocomposite thick films by aerosol deposition method (ADM) and report their highly enhanced optical and electrical characteristics. Nanocomposite gold / PZT 3-¿m-thick films acquired the enhanced surface plasmon resonance at a wavelength of 640 nm as well as the enhanced electrical properties. The strength and the position of surface plasmon resonance at the nanocomposite films deposited by ADM could be controlled by adjusting the concentration and the shape of nanogold in the host matrix.
{"title":"Fabrication of ferroelectric optical nanocomposite thick films by aerosol deposition method","authors":"Jaehyuk Park, J. Akedo","doi":"10.1109/ISAF.2008.4693829","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693829","url":null,"abstract":"We demonstrate a fabrication of ferroelectric optical nanocomposite thick films by aerosol deposition method (ADM) and report their highly enhanced optical and electrical characteristics. Nanocomposite gold / PZT 3-¿m-thick films acquired the enhanced surface plasmon resonance at a wavelength of 640 nm as well as the enhanced electrical properties. The strength and the position of surface plasmon resonance at the nanocomposite films deposited by ADM could be controlled by adjusting the concentration and the shape of nanogold in the host matrix.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129406608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693737
Xuhui Lu, R. W. Schwartz, W. Huebner
The electric field distribution, field and power density enhancement factors, power loss and stored electric energy in dielectric composites were calculated using the boundary-element method (BEM). The composites consist of a low permittivity host containing either spherical conducting inclusions having dielectric coating shells, or dielectrically or conductively graded spherical dielectric particles. It is shown that the local electric field and power density enhancement effects diminish as the thickness of shells, the number of grading layers or the degree of nonlinearity of grading increases. The reduced enhancement effects significantly increase the normalized stored electric energy due to the fact that with a reduced enhancement factor a higher voltage can be applied. Frequency effects for composites with conductivity-graded particles were also considered. The results of these studies have implications for the design of high energy density dielectric composites.
{"title":"HP007 modeling permittivity and conductivity contrast on electric energy storage properties of dielectric composites","authors":"Xuhui Lu, R. W. Schwartz, W. Huebner","doi":"10.1109/ISAF.2008.4693737","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693737","url":null,"abstract":"The electric field distribution, field and power density enhancement factors, power loss and stored electric energy in dielectric composites were calculated using the boundary-element method (BEM). The composites consist of a low permittivity host containing either spherical conducting inclusions having dielectric coating shells, or dielectrically or conductively graded spherical dielectric particles. It is shown that the local electric field and power density enhancement effects diminish as the thickness of shells, the number of grading layers or the degree of nonlinearity of grading increases. The reduced enhancement effects significantly increase the normalized stored electric energy due to the fact that with a reduced enhancement factor a higher voltage can be applied. Frequency effects for composites with conductivity-graded particles were also considered. The results of these studies have implications for the design of high energy density dielectric composites.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129864434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693888
J. B. Lim, S. Zhang, N. Kim, T. Shrout
(1¿x)[0.4BiScO3¿0.6BaTiO3] + x (K1/2Bi1/2)TiO3 [BSBT-KBTx] ceramics in the perovskite solid solution system were studied for potential high temperature capacitor applications. The diectric properties of BSBT-KBTx ceramics were investigated as a function temperature and frequency. The BSBT-KBTx ceramics showed high dielectric permittivity (> 1000 @RT) and low dielectric loss over the temperature range from 100 ~ 300°C with a flat temperature coefficient (TCC). In addition, BSBT-KBTx ceramics were observed to possess a dielectric relaxation at temperatures (> 300 K). Polarization measurements as a function of electric field showed high energy storage densities with 1.8 J/cm3 at 120 kV/cm. Therefore, dielectrics in this novel ternary system appear to be promising candidates for high temperature and energy storage capacitors.
{"title":"Dielectric behavior in the BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system","authors":"J. B. Lim, S. Zhang, N. Kim, T. Shrout","doi":"10.1109/ISAF.2008.4693888","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693888","url":null,"abstract":"(1¿x)[0.4BiScO3¿0.6BaTiO3] + x (K1/2Bi1/2)TiO3 [BSBT-KBTx] ceramics in the perovskite solid solution system were studied for potential high temperature capacitor applications. The diectric properties of BSBT-KBTx ceramics were investigated as a function temperature and frequency. The BSBT-KBTx ceramics showed high dielectric permittivity (> 1000 @RT) and low dielectric loss over the temperature range from 100 ~ 300°C with a flat temperature coefficient (TCC). In addition, BSBT-KBTx ceramics were observed to possess a dielectric relaxation at temperatures (> 300 K). Polarization measurements as a function of electric field showed high energy storage densities with 1.8 J/cm3 at 120 kV/cm. Therefore, dielectrics in this novel ternary system appear to be promising candidates for high temperature and energy storage capacitors.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128080838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693900
R. M. Valdes, R. Palai, R. Katiyar
Ba1-xSr3TiO3 (BSTO) is a suitable material for microelectronic device applications due to its high response of the dielectric permittivity an applied electric filed. We have investigated crystal structure, dielectric response, electrical conduction and ferroelectric properties of BSTO. Sol gel and solid state processing were used as routes for the synthesis of BSTO ceramics. The microstructures including grain size and phase analysis have been examined using SEM, X-ray diffraction, and Raman Spectroscopy. The chemical characterization was measured by EDS. From the temperature dependence of measured relative permittivity, loss tangent and, tunability at frequencies between 1 KHz to 1 MHz, the ferroelectric phase transition of BSTO-sg (x=0.4) was observed in ~ 238K, BST-ss (x=0.4) in 267K, and BST-sg & BST-ss (x=0.3) were observed both in ~312K.
{"title":"Structural, dielectric, electric, and ferroelectric properties of different routes derived of Ba1-xSrxTiO3 (BSTO) ceramic","authors":"R. M. Valdes, R. Palai, R. Katiyar","doi":"10.1109/ISAF.2008.4693900","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693900","url":null,"abstract":"Ba1-xSr3TiO3 (BSTO) is a suitable material for microelectronic device applications due to its high response of the dielectric permittivity an applied electric filed. We have investigated crystal structure, dielectric response, electrical conduction and ferroelectric properties of BSTO. Sol gel and solid state processing were used as routes for the synthesis of BSTO ceramics. The microstructures including grain size and phase analysis have been examined using SEM, X-ray diffraction, and Raman Spectroscopy. The chemical characterization was measured by EDS. From the temperature dependence of measured relative permittivity, loss tangent and, tunability at frequencies between 1 KHz to 1 MHz, the ferroelectric phase transition of BSTO-sg (x=0.4) was observed in ~ 238K, BST-ss (x=0.4) in 267K, and BST-sg & BST-ss (x=0.3) were observed both in ~312K.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122949829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693747
O. Wunnicke, M. Klee, K. Reimann, C. Renders, H. van Esch, W. Keur, J. Zhao, M. de Wild, A. Roest
Galvanic piezoelectric RF MEMS switches are presented. The switches are completely processed and characterized mechanically and electrically. The mechanic deformation and switching times are discussed. Closing of the switch can be achieved within less than 10 ¿s. Electrical measurements yield contact resistances in the order of 50 ¿ and isolation resistance of more than 1 G¿.
{"title":"MI007: Galvanic piezoelectric RF MEMS switches","authors":"O. Wunnicke, M. Klee, K. Reimann, C. Renders, H. van Esch, W. Keur, J. Zhao, M. de Wild, A. Roest","doi":"10.1109/ISAF.2008.4693747","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693747","url":null,"abstract":"Galvanic piezoelectric RF MEMS switches are presented. The switches are completely processed and characterized mechanically and electrically. The mechanic deformation and switching times are discussed. Closing of the switch can be achieved within less than 10 ¿s. Electrical measurements yield contact resistances in the order of 50 ¿ and isolation resistance of more than 1 G¿.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131504084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693769
Z. Kutnjak, R. Blinc
I The dielectric, heat capacity, and piezoelectric investigations of PMN-PT crystals show the existence of a line of critical points for the paraelectric to ferroelectric transformations in the composition-temperature-electric field (x-T-E) phase diagram. On approaching the critical point both the enthalpy cost to induce the intermediate monoclinic states and thus the barier for polarization rotations decrease significantly.
{"title":"Enhancement of the giant electromechanical response in relaxor ferroelectrics due to the critical point proximity","authors":"Z. Kutnjak, R. Blinc","doi":"10.1109/ISAF.2008.4693769","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693769","url":null,"abstract":"I The dielectric, heat capacity, and piezoelectric investigations of PMN-PT crystals show the existence of a line of critical points for the paraelectric to ferroelectric transformations in the composition-temperature-electric field (x-T-E) phase diagram. On approaching the critical point both the enthalpy cost to induce the intermediate monoclinic states and thus the barier for polarization rotations decrease significantly.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133013245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693749
M. Lanagan, K. Rajab, Duck-Ki Kwon, G. Semouchkin, E. Semouchkina, M. Iwasaki
Integrated high frequency devices require high permittivity dielectric materials with low loss as well as low sintering temperatures. Ceramics with higher permittivity (50<¿r<350) than conventional low temperature co-fired ceramics (5 < ¿r < 10) will drive further miniaturization of embedded capacitor components and resonators. For microwave and mmwave frequency systems, new integration concepts will be needed to go beyond traditional packaging of electronic components as frequencies. Recently, metamaterials have been developed from composite structures with high and low permittivity. Metamaterials have the unique ability to steer microwave beams and provide unusual dielectric and magnetic properties.
{"title":"Ceramic dielectric materials for microwave resonator arrays","authors":"M. Lanagan, K. Rajab, Duck-Ki Kwon, G. Semouchkin, E. Semouchkina, M. Iwasaki","doi":"10.1109/ISAF.2008.4693749","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693749","url":null,"abstract":"Integrated high frequency devices require high permittivity dielectric materials with low loss as well as low sintering temperatures. Ceramics with higher permittivity (50<¿r<350) than conventional low temperature co-fired ceramics (5 < ¿r < 10) will drive further miniaturization of embedded capacitor components and resonators. For microwave and mmwave frequency systems, new integration concepts will be needed to go beyond traditional packaging of electronic components as frequencies. Recently, metamaterials have been developed from composite structures with high and low permittivity. Metamaterials have the unique ability to steer microwave beams and provide unusual dielectric and magnetic properties.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131807540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693812
Y. Takayama, N. J. Donnelly, C. Randall
The piezoelectric material composition is PZT-SKN with a Li2CO3 flux. This system has been developed successfully for air-fired actuators in PSU with Ag-Pd alloyed inner electrodes. We tried to control the lead activity by adding higher excess PbO in the formulation. Samples were all sintered at 900°C for 6 hours in PO2 = 5.38×10¿12 atm. With 3.0, 4.0wt% PbO excess addition, we note that density, micro-structure and permittivity are similar and there is a high electro-mechanical performance for example, the high field piezoelectric d33 was ~480pm/V. However, there is some decrease in d33 after the sintering in low PO2 and Rayleigh coefficients shows PO2 to slightly suppressing both the intrinsic and extrinsic contribution to piezoelectric properties. Multilayer actuators with copper inner electrode were successfully fabricated with the PZT-SKN after processing with techniques and materials that have low residual carbon.
{"title":"Piezoelectric actuators with Cu inner electrode","authors":"Y. Takayama, N. J. Donnelly, C. Randall","doi":"10.1109/ISAF.2008.4693812","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693812","url":null,"abstract":"The piezoelectric material composition is PZT-SKN with a Li2CO3 flux. This system has been developed successfully for air-fired actuators in PSU with Ag-Pd alloyed inner electrodes. We tried to control the lead activity by adding higher excess PbO in the formulation. Samples were all sintered at 900°C for 6 hours in PO2 = 5.38×10¿12 atm. With 3.0, 4.0wt% PbO excess addition, we note that density, micro-structure and permittivity are similar and there is a high electro-mechanical performance for example, the high field piezoelectric d33 was ~480pm/V. However, there is some decrease in d33 after the sintering in low PO2 and Rayleigh coefficients shows PO2 to slightly suppressing both the intrinsic and extrinsic contribution to piezoelectric properties. Multilayer actuators with copper inner electrode were successfully fabricated with the PZT-SKN after processing with techniques and materials that have low residual carbon.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123987421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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