Antimony selenosulfide Sb2(SxSe1−x)3 is featured as a stable, environment-friendly, and low-cost light-harvesting material with a tunable bandgap in the range of 1.1–1.8 eV, satisfying the requirement of indoor photovoltaics (IPVs). Up to now, the certified efficiency of Sb2(SxSe1−x)3 solar cell with 1.45 eV bandgap has broken 10% under standard illumination (AM1.5G). However, this bandgap is not suitable for IPVs in terms of spectral matching. Herein, for the first time, the effect of optical bandgap of Sb2(SxSe1−x)3 on photovoltaic performance of the devices under AM1.5G and indoor light conditions is studied systematically. It is discovered that although an appropriate Se/S atomic ratio is beneficial for improving the crystallinity of Sb2(SxSe1−x)3 film and passivating the trap states, the band gap remains a key factor in determining the suitability of this material for IPVs. As a result, solar cells based on Sb2S3 with a large bandgap of 1.74 eV achieve an optimal efficiency of 20.34% under 1000 lux indoor illumination. Moreover, a high IPV efficiency of over 16% can still be maintained within a wide bandgap range from 1.5 to 1.7 eV, demonstrating the great potential of Sb-based chalcogenide as a light-harvesting material for IPVs.
{"title":"Band Gap Adjustable Antimony Selenosulfide Indoor Photovoltaics with 20% Efficiency","authors":"Huihui Gao, Jianyu Li, Xiaoqi Peng, Yuqian Huang, Qi Zhao, Haolin Wang, Ting Wu, Shuwei Sheng, Rongfeng Tang, Tao Chen","doi":"10.1002/solr.202400389","DOIUrl":"10.1002/solr.202400389","url":null,"abstract":"<p>Antimony selenosulfide Sb<sub>2</sub>(S<sub><i>x</i></sub>Se<sub>1−<i>x</i></sub>)<sub>3</sub> is featured as a stable, environment-friendly, and low-cost light-harvesting material with a tunable bandgap in the range of 1.1–1.8 eV, satisfying the requirement of indoor photovoltaics (IPVs). Up to now, the certified efficiency of Sb<sub>2</sub>(S<sub><i>x</i></sub>Se<sub>1−<i>x</i></sub>)<sub>3</sub> solar cell with 1.45 eV bandgap has broken 10% under standard illumination (AM1.5G). However, this bandgap is not suitable for IPVs in terms of spectral matching. Herein, for the first time, the effect of optical bandgap of Sb<sub>2</sub>(S<sub><i>x</i></sub>Se<sub>1−<i>x</i></sub>)<sub>3</sub> on photovoltaic performance of the devices under AM1.5G and indoor light conditions is studied systematically. It is discovered that although an appropriate Se/S atomic ratio is beneficial for improving the crystallinity of Sb<sub>2</sub>(S<sub><i>x</i></sub>Se<sub>1−<i>x</i></sub>)<sub>3</sub> film and passivating the trap states, the band gap remains a key factor in determining the suitability of this material for IPVs. As a result, solar cells based on Sb<sub>2</sub>S<sub>3</sub> with a large bandgap of 1.74 eV achieve an optimal efficiency of 20.34% under 1000 lux indoor illumination. Moreover, a high IPV efficiency of over 16% can still be maintained within a wide bandgap range from 1.5 to 1.7 eV, demonstrating the great potential of Sb-based chalcogenide as a light-harvesting material for IPVs.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":6.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}