Benjamin Hammann, Pedro Vieira Rodrigues, Nicole Aßmann, Wolfram Kwapil, Florian Schindler, Martin C. Schubert, Stefan W. Glunz
In recent years, significant attention has been paid to the research of light‐ and elevated‐temperature‐induced degradation (LeTID) in silicon solar cells due to the substantial power loss and instability it causes. It has been discovered that the presence of hydrogen is closely linked to the occurrence of LeTID. In this study, a thorough review and re‐assessment of previously published results is conducted and connected with newly obtained data. The findings indicate a complex interaction between different hydrogen complexes and the LeTID defect states. The precursor of LeTID is connected to molecular hydrogen (H2), while the LeTID degradation and regeneration are related to the binding of atomic hydrogen to the precursor and defect, respectively. A detailed description of the various reactions that occur under illumination and in the dark is provided. Additionally, explanation is given on how pre‐annealing can significantly affect the kinetics of LeTID during subsequent light soaking. Furthermore, a comprehensive hydrogen model that incorporates these various reactions and demonstrates an agreement between simulation and experimental results is developed. Finally, the implications of the findings on strategies for mitigating LeTID are discussed.
{"title":"Deciphering the Role of Hydrogen in the Degradation of Silicon Solar Cells under Light and Elevated Temperature","authors":"Benjamin Hammann, Pedro Vieira Rodrigues, Nicole Aßmann, Wolfram Kwapil, Florian Schindler, Martin C. Schubert, Stefan W. Glunz","doi":"10.1002/solr.202400457","DOIUrl":"https://doi.org/10.1002/solr.202400457","url":null,"abstract":"In recent years, significant attention has been paid to the research of light‐ and elevated‐temperature‐induced degradation (LeTID) in silicon solar cells due to the substantial power loss and instability it causes. It has been discovered that the presence of hydrogen is closely linked to the occurrence of LeTID. In this study, a thorough review and re‐assessment of previously published results is conducted and connected with newly obtained data. The findings indicate a complex interaction between different hydrogen complexes and the LeTID defect states. The precursor of LeTID is connected to molecular hydrogen (H<jats:sub>2</jats:sub>), while the LeTID degradation and regeneration are related to the binding of atomic hydrogen to the precursor and defect, respectively. A detailed description of the various reactions that occur under illumination and in the dark is provided. Additionally, explanation is given on how pre‐annealing can significantly affect the kinetics of LeTID during subsequent light soaking. Furthermore, a comprehensive hydrogen model that incorporates these various reactions and demonstrates an agreement between simulation and experimental results is developed. Finally, the implications of the findings on strategies for mitigating LeTID are discussed.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Oliver Kunz, Juergen W. Weber, Germain Rey, Mattias Juhl, Thorsten Trupke
Optical switching of the electrical operating point of individual crystalline silicon modules has previously been demonstrated as an elegant noncontact method for outdoor photoluminescence image acquisition in full daylight, with the important advantage that no modifications to the system wiring are required. Herein, a modified approach for photoluminescence imaging acquisition in large photovoltaic arrays, enabled by simultaneous optical switching of all modules within a series‐connected string, is demonstrated. This improved method is a simpler approach and allows for significantly increased measurement throughput. Quantitative assessment of image data acquired in full daylight is possible since all modules in a string are series connected and operate at the same current. Excellent agreement is reported for voltage variations between modules that are inferred from daylight photoluminescence image data and measurements conducted under controlled laboratory conditions.
{"title":"Daylight Photoluminescence Imaging via Optical String Switching","authors":"Oliver Kunz, Juergen W. Weber, Germain Rey, Mattias Juhl, Thorsten Trupke","doi":"10.1002/solr.202400385","DOIUrl":"https://doi.org/10.1002/solr.202400385","url":null,"abstract":"Optical switching of the electrical operating point of individual crystalline silicon modules has previously been demonstrated as an elegant noncontact method for outdoor photoluminescence image acquisition in full daylight, with the important advantage that no modifications to the system wiring are required. Herein, a modified approach for photoluminescence imaging acquisition in large photovoltaic arrays, enabled by simultaneous optical switching of all modules within a series‐connected string, is demonstrated. This improved method is a simpler approach and allows for significantly increased measurement throughput. Quantitative assessment of image data acquired in full daylight is possible since all modules in a string are series connected and operate at the same current. Excellent agreement is reported for voltage variations between modules that are inferred from daylight photoluminescence image data and measurements conducted under controlled laboratory conditions.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The nonradiative recombination arising from the interfaces of perovskite solar cells (PSCs) pose a hurdle, impacting both the efficiency and stability of devices. Functionalized organic molecules can passivate the perovskite surface to suppress the defects and can also fine‐tune the microstructure. This in turn promotes reliability and performance enhancement in solar cells. Using a design protocol, cyanoguanidine diiodide is synthesized and employed as a surface passivator for the fabrication of PSCs, and boosted performance from 20.44% to 23.04% is achieved. This improvement stems from an improved fill factor reaching up to 80.64%, together with the open‐circuit voltage (Voc) measuring 1119 mV. The steady‐state photoluminescence and microstructure of passivated perovskites display significant surface modification of the perovskite film which favorably impacts the charge carrier transfer at the interface of perovskite and Spiro‐OMeTAD. Our findings suggest that improved solar cell performance is due to the synergetic effect of amino and cyano functional groups along with the iodide reservoir in the organic passivator.
{"title":"Multifaceted Design of Surface Passivator for Upgraded Charge Extraction in Perovskite Solar Cells","authors":"Mahdi Gassara, Samrana Kazim, Shahzada Ahmad","doi":"10.1002/solr.202400438","DOIUrl":"https://doi.org/10.1002/solr.202400438","url":null,"abstract":"The nonradiative recombination arising from the interfaces of perovskite solar cells (PSCs) pose a hurdle, impacting both the efficiency and stability of devices. Functionalized organic molecules can passivate the perovskite surface to suppress the defects and can also fine‐tune the microstructure. This in turn promotes reliability and performance enhancement in solar cells. Using a design protocol, cyanoguanidine diiodide is synthesized and employed as a surface passivator for the fabrication of PSCs, and boosted performance from 20.44% to 23.04% is achieved. This improvement stems from an improved fill factor reaching up to 80.64%, together with the open‐circuit voltage (<jats:italic>V</jats:italic><jats:sub>oc</jats:sub>) measuring 1119 mV. The steady‐state photoluminescence and microstructure of passivated perovskites display significant surface modification of the perovskite film which favorably impacts the charge carrier transfer at the interface of perovskite and Spiro‐OMeTAD. Our findings suggest that improved solar cell performance is due to the synergetic effect of amino and cyano functional groups along with the iodide reservoir in the organic passivator.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anh Huy Tuan Le, Shuai Nie, Eduardo Prieto Ochoa, John Rodriguez, Ruy Sebastian Bonilla, Ziv Hameiri
Knowledge regarding the temperature dependence of the surface recombination at the interface between silicon and various dielectrics is critically important as it 1) provides fundamental information regarding the interfaces and 2) improves the modeling of solar cell performance under actual operating conditions. Herein, the temperature- and carrier-dependent surface recombination at the silicon–oxide/silicon and aluminum–oxide/silicon interfaces in the temperature range of 25−90 °C using an advanced technique is investigated. This method enables to control the surface carrier population from heavy accumulation to heavy inversion via an external bias voltage, allowing for the decoupling of the bulk and surface contributions to the effective lifetime. Thus, it offers a simple and versatile manner to separate the chemical passivation from the charge-assisted population control at the silicon/dielectric interface. A model is established to obtain the temperature dependence of the capture cross sections, a critical capability for the optimization of the dielectric layers and the investigation of the fundamental properties of the passivation under field operating conditions.
了解硅与各种电介质界面上表面重组的温度依赖性至关重要，因为它：1）提供了有关界面的基本信息；2）改进了实际工作条件下太阳能电池性能的建模。本文采用一种先进的技术，研究了 25-90 °C 温度范围内硅-氧化物/硅和铝-氧化物/硅界面上与温度和载流子有关的表面重组。这种方法能够通过外部偏置电压控制表面载流子群从重度积聚到重度反转，从而使有效寿命的块体和表面贡献解耦。因此，它提供了一种简单而通用的方法，将化学钝化与硅/介质界面上的电荷辅助载流子群控制分离开来。我们建立了一个模型来获得俘获截面的温度依赖性，这是优化介电层和研究现场工作条件下钝化基本特性的关键能力。
{"title":"Determination of Temperature- and Carrier-Dependent Surface Recombination in Silicon","authors":"Anh Huy Tuan Le, Shuai Nie, Eduardo Prieto Ochoa, John Rodriguez, Ruy Sebastian Bonilla, Ziv Hameiri","doi":"10.1002/solr.202400191","DOIUrl":"10.1002/solr.202400191","url":null,"abstract":"<p>Knowledge regarding the temperature dependence of the surface recombination at the interface between silicon and various dielectrics is critically important as it 1) provides fundamental information regarding the interfaces and 2) improves the modeling of solar cell performance under actual operating conditions. Herein, the temperature- and carrier-dependent surface recombination at the silicon–oxide/silicon and aluminum–oxide/silicon interfaces in the temperature range of 25−90 °C using an advanced technique is investigated. This method enables to control the surface carrier population from heavy accumulation to heavy inversion via an external bias voltage, allowing for the decoupling of the bulk and surface contributions to the effective lifetime. Thus, it offers a simple and versatile manner to separate the chemical passivation from the charge-assisted population control at the silicon/dielectric interface. A model is established to obtain the temperature dependence of the capture cross sections, a critical capability for the optimization of the dielectric layers and the investigation of the fundamental properties of the passivation under field operating conditions.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":6.0,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202400191","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Antimony chalcogenide solar cells have captured considerable attention in recent years with an efficiency of over 10%, due to their use of Earth‐abundant materials and superior physical characteristics. Despite these achievements, significant nonradiative recombination processes within these solar cells present a substantial obstacle to further efficiency improvements. Therefore, this review delves into the primary mechanisms responsible for nonradiative recombination losses in antimony chalcogenide solar cells. Additionally, the latest advancements in addressing these losses are summarized. Finally, potential directions for future research efforts aimed at reducing nonrecombination losses and enhancing the overall performance of these devices are outlined.
{"title":"A Review on Suppressing Nonradiative Recombination Losses in Antimony Chalcogenide Thin‐Film Solar Cell","authors":"Yike Liu, Shunjian Xu, Yongping Luo, Guojie Chen, Shuo Chen, Zhuanghao Zheng, Guangxing Liang","doi":"10.1002/solr.202400499","DOIUrl":"https://doi.org/10.1002/solr.202400499","url":null,"abstract":"Antimony chalcogenide solar cells have captured considerable attention in recent years with an efficiency of over 10%, due to their use of Earth‐abundant materials and superior physical characteristics. Despite these achievements, significant nonradiative recombination processes within these solar cells present a substantial obstacle to further efficiency improvements. Therefore, this review delves into the primary mechanisms responsible for nonradiative recombination losses in antimony chalcogenide solar cells. Additionally, the latest advancements in addressing these losses are summarized. Finally, potential directions for future research efforts aimed at reducing nonrecombination losses and enhancing the overall performance of these devices are outlined.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heat‐assisted intensive light soaking has been proposed as an effective posttreatment to further enhance the performance of silicon heterojunction (SHJ) solar cells. In the current study, it is aimed to distinguish the effects of heat and illumination on different (doped and undoped) layers of the SHJ contact stack. It is discovered that both elevated temperature and illumination are necessary to significantly reduce interface recombination when working effectively together. The synergistic effect on passivation displays a thermal activation energy of approximately 0.5 eV. This is likely due to the photogenerated electron/hole pairs in the c–Si wafer, where nearly all of the incident light is absorbed. By distinguishing between the effects of light and heat effects on the conductivity of p‐ and n‐type doped hydrogenated amorphous silicon (a–Si:H) layers, it is demonstrated that only heat is accountable for the observed rise in conductivity. According to numerical device simulations, the significant contribution to the open‐circuit voltage enhancement arises from the reduced density of defect states at the c–Si/intrinsic a–Si:H interface. In addition, the evolution of the fill factor is highly dependent on changes in interface defect density and the band tail state density of p‐type a–Si:H.
有人提出，热辅助强光浸泡是进一步提高硅异质结（SHJ）太阳能电池性能的有效后处理方法。本研究旨在区分热量和光照对 SHJ 接触堆不同层（掺杂层和未掺杂层）的影响。研究发现，当升温和照明同时有效发挥作用时，可显著减少界面重组。钝化的协同效应显示出约 0.5 eV 的热活化能。这可能是由于晶体硅晶片中光生成的电子/空穴对几乎吸收了所有的入射光。通过区分光效应和热效应对 p 型和 n 型掺杂氢化非晶硅（a-Si:H）层电导率的影响，可以证明只有热效应才会导致观察到的电导率上升。根据数值设备模拟，开路电压增强的主要原因是晶体硅/本征 a-Si:H 界面的缺陷态密度降低。此外，填充因子的变化高度依赖于界面缺陷密度和 p 型 a-Si:H 带尾状态密度的变化。
{"title":"Insights into the Heat‐Assisted Intensive Light‐Soaking Effect on Silicon Heterojunction Solar Cells","authors":"Weiyuan Duan, Tobias Rudolph, Habtamu Tsegaye Gebrewold, Karsten Bittkau, Andreas Lambertz, Depeng Qiu, Muhammad Ainul Yaqin, Xixiang Xu, Kaining Ding, Uwe Rau","doi":"10.1002/solr.202400383","DOIUrl":"https://doi.org/10.1002/solr.202400383","url":null,"abstract":"Heat‐assisted intensive light soaking has been proposed as an effective posttreatment to further enhance the performance of silicon heterojunction (SHJ) solar cells. In the current study, it is aimed to distinguish the effects of heat and illumination on different (doped and undoped) layers of the SHJ contact stack. It is discovered that both elevated temperature and illumination are necessary to significantly reduce interface recombination when working effectively together. The synergistic effect on passivation displays a thermal activation energy of approximately 0.5 eV. This is likely due to the photogenerated electron/hole pairs in the c–Si wafer, where nearly all of the incident light is absorbed. By distinguishing between the effects of light and heat effects on the conductivity of p‐ and n‐type doped hydrogenated amorphous silicon (a–Si:H) layers, it is demonstrated that only heat is accountable for the observed rise in conductivity. According to numerical device simulations, the significant contribution to the open‐circuit voltage enhancement arises from the reduced density of defect states at the c–Si/intrinsic a–Si:H interface. In addition, the evolution of the fill factor is highly dependent on changes in interface defect density and the band tail state density of p‐type a–Si:H.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miriam Minguez‐Avellan, Noemi Farinós‐Navajas, Jaume Noguera‐Gómez, Víctor Sagra Rodríguez, Marta Vallés‐Pelarda, Cristina Momblona, Teresa S. Ripolles, Pablo P. Boix, Rafael Abargues
Metal halide perovskites offer a promising opportunity for transforming solar energy into chemical energy, thereby addressing pressing environmental challenges. While their excellent optoelectronic properties have been successfully applied in photovoltaics, their potential in photocatalysis remains relatively unexplored. Herein, we report a novel humidity‐driven approach for the in situ synthesis of MAPbI3 nanocrystals (NCs) within a nickel acetate matrix, forming a nanocomposite thin film that enhances the system's stability and enables its use in photochemical reactions. UV‐Vis spectroscopy and X‐ray diffraction confirm the rapid and effective synthesis of NCs within the matrix after 1 min at 80% relative humidity (RH). Optimal photoconversion conditions are attained after 60 min of exposure at 80% RH, due to the increased porosity and nanocrystal size over time as revealed by electron microscopy. The MAPbI3‐Ni(AcO)2 nanocomposite exhibits superior photocatalytic activity compared to standard polycrystalline MAPbI3 films for the decomposition of Sudan III under simulated sunlight. Furthermore, the nanocomposite demonstrates good recyclability over multiple cycles. Overall, this work highlights the potential of MHP‐based nanocomposites for solar‐driven catalytic systems in pollution mitigation.
金属卤化物过氧化物为将太阳能转化为化学能，从而应对紧迫的环境挑战提供了一个大有可为的机会。虽然金属卤化物的优异光电特性已成功应用于光伏领域，但其在光催化领域的潜力仍相对有待开发。在此，我们报告了一种在醋酸镍基质中原位合成 MAPbI3 纳米晶体（NCs）的新型湿度驱动方法，该方法形成的纳米复合薄膜可增强系统的稳定性，使其能够用于光化学反应。紫外可见光谱和 X 射线衍射证实，在相对湿度（RH）为 80% 的条件下，1 分钟后就能在基质中快速有效地合成 NC。由于电子显微镜显示孔隙率和纳米晶体尺寸随着时间的推移而增大，因此在 80% 相对湿度下暴露 60 分钟后就能达到最佳光电转换条件。与标准多晶 MAPbI3 薄膜相比，MAPbI3-Ni(AcO)2 纳米复合材料在模拟阳光下分解苏丹 III 时表现出更高的光催化活性。此外，这种纳米复合材料在多次循环中表现出良好的可回收性。总之，这项工作凸显了基于 MHP 的纳米复合材料在太阳能驱动的污染缓解催化系统中的潜力。
{"title":"Perovskite Nanocomposite: A Step Toward Photocatalytic Degradation of Organic Dyes","authors":"Miriam Minguez‐Avellan, Noemi Farinós‐Navajas, Jaume Noguera‐Gómez, Víctor Sagra Rodríguez, Marta Vallés‐Pelarda, Cristina Momblona, Teresa S. Ripolles, Pablo P. Boix, Rafael Abargues","doi":"10.1002/solr.202400449","DOIUrl":"https://doi.org/10.1002/solr.202400449","url":null,"abstract":"Metal halide perovskites offer a promising opportunity for transforming solar energy into chemical energy, thereby addressing pressing environmental challenges. While their excellent optoelectronic properties have been successfully applied in photovoltaics, their potential in photocatalysis remains relatively unexplored. Herein, we report a novel humidity‐driven approach for the in situ synthesis of MAPbI<jats:sub>3</jats:sub> nanocrystals (NCs) within a nickel acetate matrix, forming a nanocomposite thin film that enhances the system's stability and enables its use in photochemical reactions. UV‐Vis spectroscopy and X‐ray diffraction confirm the rapid and effective synthesis of NCs within the matrix after 1 min at 80% relative humidity (RH). Optimal photoconversion conditions are attained after 60 min of exposure at 80% RH, due to the increased porosity and nanocrystal size over time as revealed by electron microscopy. The MAPbI<jats:sub>3</jats:sub>‐Ni(AcO)<jats:sub>2</jats:sub> nanocomposite exhibits superior photocatalytic activity compared to standard polycrystalline MAPbI<jats:sub>3</jats:sub> films for the decomposition of Sudan III under simulated sunlight. Furthermore, the nanocomposite demonstrates good recyclability over multiple cycles. Overall, this work highlights the potential of MHP‐based nanocomposites for solar‐driven catalytic systems in pollution mitigation.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
CsPbIBr2 has garnered significant interest due to its ideal bandgap and good stability. However, defects formed at the interface between the electron transport layer and the perovskite can lead to increased non‐radiative recombination, which negatively impacts both the power conversion efficiency (PCE) of perovskite solar cells and the long‐term stability of the cells. Herein, the TiO2/perovskite interface is modified by adding sodium silicate to passivate the defects on the interface. The introduction of Na+ partially reduces Ti4+ to Ti3+ in TiO2, thereby passivating trap states caused by oxygen vacancy defects and adjusting the energy level alignment between TiO2 and the perovskite film, enhancing the carrier transport efficiency. Additionally, SiO32− can form SiOPb (and Cs) bonds with the undercoordinated Pb2+ and Cs+ on the surface of the perovskite layer, effectively passivating surface defects of the perovskite film and thereby improving the efficiency of the devices. Ultimately, the carbon‐based all‐inorganic CsPbIBr2 perovskite solar cells treated with Na2SiO3 exhibit a significantly improved PCE of 10.85% compared to 8.62% of the control sample and achieve a high open‐circuit voltage of 1.31 V. With this modification, the devices also demonstrate reduced hysteresis effects and enhanced stability.
{"title":"Enhancing the Performance of Carbon‐Based All‐Inorganic CsPbIBr2 Perovskite Solar Cells via Na2SiO3 Surface Treatment for Passivation of the TiO2/Perovskite Interface","authors":"Shuyue Xue, Sheng Yang, Yukai Liu, Jinzhan Su","doi":"10.1002/solr.202400443","DOIUrl":"https://doi.org/10.1002/solr.202400443","url":null,"abstract":"CsPbIBr<jats:sub>2</jats:sub> has garnered significant interest due to its ideal bandgap and good stability. However, defects formed at the interface between the electron transport layer and the perovskite can lead to increased non‐radiative recombination, which negatively impacts both the power conversion efficiency (PCE) of perovskite solar cells and the long‐term stability of the cells. Herein, the TiO<jats:sub>2</jats:sub>/perovskite interface is modified by adding sodium silicate to passivate the defects on the interface. The introduction of Na<jats:sup>+</jats:sup> partially reduces Ti<jats:sup>4+</jats:sup> to Ti<jats:sup>3+</jats:sup> in TiO<jats:sub>2</jats:sub>, thereby passivating trap states caused by oxygen vacancy defects and adjusting the energy level alignment between TiO<jats:sub>2</jats:sub> and the perovskite film, enhancing the carrier transport efficiency. Additionally, SiO<jats:sub>3</jats:sub><jats:sup>2−</jats:sup> can form SiOPb (and Cs) bonds with the undercoordinated Pb<jats:sup>2+</jats:sup> and Cs<jats:sup>+</jats:sup> on the surface of the perovskite layer, effectively passivating surface defects of the perovskite film and thereby improving the efficiency of the devices. Ultimately, the carbon‐based all‐inorganic CsPbIBr<jats:sub>2</jats:sub> perovskite solar cells treated with Na<jats:sub>2</jats:sub>SiO<jats:sub>3</jats:sub> exhibit a significantly improved PCE of 10.85% compared to 8.62% of the control sample and achieve a high open‐circuit voltage of 1.31 V. With this modification, the devices also demonstrate reduced hysteresis effects and enhanced stability.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Li‐Chun Chang, Anh Dinh Bui, Keqing Huang, Felipe Kremer, Frank Brink, Wei Wang, Anne Haggren, Azul Osorio Mayon, Xuan Minh Chau Ta, Leiping Duan, Olivier Lee Cheong Lem, Yihui Hou, Dang‐Thuan Nguyen, Grace Dansoa Tabi, Hualin Zhan, Viqar Ahmad, The Duong, Thomas white, Daniel Walter, Klaus Weber, Kylie Catchpole, Heping Shen
The bottom perovskite with the hole transport layer (HTL) in inverted perovskite solar cells (PSCs) interface has received little attention due to challenges like interlayer dissolution during perovskite deposition. And voids at the perovskite/HTL interface can degrade cell performance. This work introduces a two‐dimensional (2D) perovskite layer between the perovskite and poly (N, N′‐bis‐4‐butylphenyl‐N, N′‐bisphenyl) benzidine (Poly‐TPD) HTL using a mixed solution of 4‐methylphenethylammonium chloride (4M‐PEA‐Cl), methylammonium iodide (MA‐I), and Poly(9,9‐bis(3′‐(N,N‐dimethyl)‐N‐ethylammoinium‐propyl‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene))dibromide (PFN‐Br). The amine functional groups in the organic salts improved HTL wettability, resulting in a void‐free interface. 4M‐PEA‐Cl, with its strong electron‐withdrawing benzene ring, outperformed other amine‐containing salts in passivating undercoordinated Pb2+ ions. Incorporating this hybrid passivation layer in PSCs resulted in a 1.8% absolute increase in power conversion efficiency (PCE) to 19.1% with 1.68 eV perovskite bandgap. Additionally, the passivated PSCs demonstrated enhanced operational stability, retaining 91% of their initial efficiency after 800 hours of continuous 1‐sun illumination, compared to 84.7% for the control sample.
{"title":"Enhanced Efficiency and Stability for the Inverted High‐Bandgap Perovskite Solar Cell via Bottom Passivation Strategy","authors":"Li‐Chun Chang, Anh Dinh Bui, Keqing Huang, Felipe Kremer, Frank Brink, Wei Wang, Anne Haggren, Azul Osorio Mayon, Xuan Minh Chau Ta, Leiping Duan, Olivier Lee Cheong Lem, Yihui Hou, Dang‐Thuan Nguyen, Grace Dansoa Tabi, Hualin Zhan, Viqar Ahmad, The Duong, Thomas white, Daniel Walter, Klaus Weber, Kylie Catchpole, Heping Shen","doi":"10.1002/solr.202400391","DOIUrl":"https://doi.org/10.1002/solr.202400391","url":null,"abstract":"The bottom perovskite with the hole transport layer (HTL) in inverted perovskite solar cells (PSCs) interface has received little attention due to challenges like interlayer dissolution during perovskite deposition. And voids at the perovskite/HTL interface can degrade cell performance. This work introduces a two‐dimensional (2D) perovskite layer between the perovskite and poly (N, N′‐bis‐4‐butylphenyl‐N, N′‐bisphenyl) benzidine (Poly‐TPD) HTL using a mixed solution of 4‐methylphenethylammonium chloride (4M‐PEA‐Cl), methylammonium iodide (MA‐I), and Poly(9,9‐bis(3′‐(N,N‐dimethyl)‐N‐ethylammoinium‐propyl‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene))dibromide (PFN‐Br). The amine functional groups in the organic salts improved HTL wettability, resulting in a void‐free interface. 4M‐PEA‐Cl, with its strong electron‐withdrawing benzene ring, outperformed other amine‐containing salts in passivating undercoordinated Pb<jats:sup>2+</jats:sup> ions. Incorporating this hybrid passivation layer in PSCs resulted in a 1.8% absolute increase in power conversion efficiency (PCE) to 19.1% with 1.68 eV perovskite bandgap. Additionally, the passivated PSCs demonstrated enhanced operational stability, retaining 91% of their initial efficiency after 800 hours of continuous 1‐sun illumination, compared to 84.7% for the control sample.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kikuo Makita, Yukiko Kamikawa, Hidenori Mizuno, Ryuji Oshima, Yasushi Shoji, Shogo Ishizuka, Ralph Müller, David Lackner, Frank Dimroth, Takeyoshi Sugaya
Multijunction (MJ) solar cells have demonstrated very high efficiencies (>30%) owing to the effective use of solar energy. Among these, the GaAs//CuInGaSe(CIGSe)‐based MJ solar cell is unique owing to its features, such as being lightweight owing to the combination of thin cells and allowing the use of flexible substrates such as thin metal plates and polymer films. Furthermore, low‐concentration solar cells offer a practical solution with high efficiency and low cost. Previously, an efficiency of more than 30% was attained for an InGaP/GaAs//CIGSe three‐junction solar cell fabricated via mechanical stacking using Pd nanoparticle arrays and a silicone adhesive (modified smart stack). In this study, the potential of GaAs//CIGSe‐based MJ solar cells is examined for application under low‐concentration sunlight. The fabricated InGaP/Al0.06Ga0.94As//CIGSe three‐junction solar cell demonstrates a maximum efficiency of 29.73% at 2.8 suns and maintained a high efficiency of ≈30% in the low‐concentration region (<10 suns). For the in‐vehicle deployment, an efficiency of 30% is sufficient to enable independent travel for 1 day in Japan. These results demonstrate the potential of smart‐stack GaAs//CIGSe‐based MJ solar cells as next‐generation solar cells.
{"title":"GaAs//CuInGaSe‐Based Multijunction Solar Cells with 30% Efficiency Under Low Concentrated Sunlight","authors":"Kikuo Makita, Yukiko Kamikawa, Hidenori Mizuno, Ryuji Oshima, Yasushi Shoji, Shogo Ishizuka, Ralph Müller, David Lackner, Frank Dimroth, Takeyoshi Sugaya","doi":"10.1002/solr.202400351","DOIUrl":"https://doi.org/10.1002/solr.202400351","url":null,"abstract":"Multijunction (MJ) solar cells have demonstrated very high efficiencies (>30%) owing to the effective use of solar energy. Among these, the GaAs//CuInGaSe(CIGSe)‐based MJ solar cell is unique owing to its features, such as being lightweight owing to the combination of thin cells and allowing the use of flexible substrates such as thin metal plates and polymer films. Furthermore, low‐concentration solar cells offer a practical solution with high efficiency and low cost. Previously, an efficiency of more than 30% was attained for an InGaP/GaAs//CIGSe three‐junction solar cell fabricated via mechanical stacking using Pd nanoparticle arrays and a silicone adhesive (modified smart stack). In this study, the potential of GaAs//CIGSe‐based MJ solar cells is examined for application under low‐concentration sunlight. The fabricated InGaP/Al<jats:sub>0.06</jats:sub>Ga<jats:sub>0.94</jats:sub>As//CIGSe three‐junction solar cell demonstrates a maximum efficiency of 29.73% at 2.8 suns and maintained a high efficiency of ≈30% in the low‐concentration region (<10 suns). For the in‐vehicle deployment, an efficiency of 30% is sufficient to enable independent travel for 1 day in Japan. These results demonstrate the potential of smart‐stack GaAs//CIGSe‐based MJ solar cells as next‐generation solar cells.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":null,"pages":null},"PeriodicalIF":7.9,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142213069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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