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A High Speed GaAs Monolithic Transimpedance Amplifier 高速砷化镓单片跨阻放大器
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114476
I. Bahl, E. Griffin, W. Powell, C. Ring
This paper describes the design method and test results for a novel transimpedance amplifier suitable for very high speed optical communications systems The amplifier chip is developed for four different bit rates: 188, 565, 1130, and 1500 Mb/s with optical sensitivities -38.5, -33, -30, dBm, respectively. The amplifier provides 2 V peak to peak output and 30 dB dynamic range.
本文介绍了一种适用于超高速光通信系统的新型跨阻放大器的设计方法和测试结果,该放大器芯片的光灵敏度分别为-38.5、-33、-30和1500 Mb/s四种不同的比特率。放大器提供2v峰对峰输出和30db动态范围。
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引用次数: 11
Optical Technology for Microwave Applications 微波应用光学技术
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114475
H. Yen
Phased array radar, communication, telemetry, and electronic warfare systems frequently require the transmission and processing of gigahertz bandwidth signals. In airborne and space applications, where low weight and immunity from electromagnetic interference are desirable, low loss optical fibers with band-width distance products as great as 100 GHz · km are an ideal vehicle for the transmission of these broadband microwave signals.
相控阵雷达、通信、遥测和电子战系统经常需要传输和处理千兆赫带宽信号。在航空和空间应用中,需要低重量和抗电磁干扰,低损耗光纤的带宽距离产品高达100 GHz·km,是传输这些宽带微波信号的理想载体。
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引用次数: 20
A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator 使用GaAs MMIC有源分配器和衰减器的2至8ghz调平环路
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114483
G. Barta, K. Jones, G. C. Herrick, E. Strid
A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.
宽带单片砷化镓桥接- t可变衰减器已与单片砷化镓有源功率分配器一起使用,形成紧凑的2至8 GHz调平环路,用于具有最小12dB调平范围和缓冲输出的RF源。衰减器内部通过使用片上GaAs运算放大器在1至10 GHz带宽上优化输入和输出返回损耗。有源功率分配器通过使用分布式放大,在1至10 GHz的带宽范围内为每个端口提供单位增益。整个4.5 cm × 42 cm的子系统是用RT-Duroid®®上的表面贴装封装实现的。
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引用次数: 17
High Volume, Low Cost, MMIC Receiver Front End 高容量,低成本,MMIC接收器前端
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114479
A. Podell, W.W. Nelson
Producing inexpensive MMIC receiver front ends in large quantities has focused attention on details of MMIC design and fabrication that are different from laboratory, or small volume production. This paper discusses design and testing tradeoffs and the performance of the resulting packaged MMIC.
大批量生产廉价的MMIC接收器前端,将注意力集中在与实验室或小批量生产不同的MMIC设计和制造细节上。本文讨论了设计和测试的权衡以及由此产生的封装MMIC的性能。
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引用次数: 13
Monolithic Optoelectronic Receiver for Gbit Operation 用于Gbit操作的单片光电接收机
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114491
S. Ray, M. Walton
A monolithic optoelectronic receiver chip was designed and fabricated for operation at 1.0 Gbit/sec data transmission rate. The major components of the receiver chip are a fast photodiode, a preamplifier, and a 1:4 demultiplexer circuit fabricated on semi-insulating GaAs substrate. Optical/electrical functionality has been demonstrated at wafer level.
设计并制作了一种单片光电接收芯片,其数据传输速率为1.0 Gbit/sec。该接收芯片主要由快速光电二极管、前置放大器和在半绝缘GaAs衬底上制作的1:4解复用电路组成。光学/电学功能已在晶圆级得到验证。
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引用次数: 7
30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology 采用离子注入fet兼容3英寸砷化镓晶圆工艺技术的30 GHz单片平衡混频器
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114477
P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao
An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.
研制了一种截止频率大于1000ghz的全离子注入肖特基势垒混频器二极管。这种新器件是平面和fet兼容的,并采用投影光刻3英寸晶圆工艺。在此基础上设计、制作并测试了一款ka波段单片平衡混频器。用10dbm的LO驱动器在30ghz下测量了8db的转换损耗。
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引用次数: 7
Low Noise Microwave HIFET Using MOCVD 采用MOCVD的低噪声微波效应场效应
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114487
H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato
Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.
采用金属有机化学气相沉积(MOCVD)技术开发了低噪声HIFET (Hetero Interface Field Effect Transistor,又称stefet或HEMT) AIGaAs/GaAs异质结构器件。具有0.5微米长和200微米宽栅极的HIFET在室温下12 GHz时的最小噪声系数为0.87 dB,相关增益为12.5 dB。与GaAs MESFET器件相比,在较低温度(- 10°C)下噪声系数有了实质性改善。
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引用次数: 0
Planar MMIC Hybrid Circuit and Frequency Converter 平面MMIC混合电路及变频器
Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114488
T. Hirota, H. Ogawa, Y. Tarusawa, K. Owada
A "planar" circuit configuration for MMIC (Monolithic Microwave Integrated Circuit) has been proposed. It uses coplanar waveguides and slotlines on the upper side of the substrate. Novel hybrid circuits have been fabricated. It has also been shown that small sized, balanced FET circuits can be achieved.
提出了一种用于单片微波集成电路的“平面”电路结构。它使用共面波导和衬底上部的槽线。新型混合电路已被制造出来。研究还表明,可以实现小尺寸、平衡的场效应管电路。
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引用次数: 9
30 GHz Multi-Bit Monolithic Phase Shifters 30ghz多比特单片移相器
Pub Date : 1985-06-01 DOI: 10.1109/MCS.1985.1113627
P. Bauhahn, C. Butter, V. Sokolov, A. Contolatis
The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.
讨论了用于ka波段工作的GaAs单片3位和4/5位开关线移相器的设计和性能。介绍了传统的嵌入式和自对准栅极(SAG)开关场效应管设计。嵌入式栅极的插入损耗低至每比特2dB,使用特定掺杂水平的SAG栅极器件的插入损耗低至每比特2.9 dB。
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引用次数: 13
A 2-W Ku-Band Monolithic GaAs FET Amplifier 一种2w ku波段单片GaAs场效应晶体管放大器
Pub Date : 1985-06-01 DOI: 10.1109/MCS.1985.1113631
H. Macksey, H. Tserng, H. Shih
A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.
设计、制作了单片三级ku波段GaAs场效应管功率放大器。外延层是通过分子束外延生长的,场效应管具有n+凸壁沟道结构的源叠加几何结构。该放大器的输出功率高达2w,频率为16.5 GHz,增益为12db,效率为20%。
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引用次数: 7
期刊
Microwave and Millimeter-Wave Monolithic Circuits
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