Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114476
I. Bahl, E. Griffin, W. Powell, C. Ring
This paper describes the design method and test results for a novel transimpedance amplifier suitable for very high speed optical communications systems The amplifier chip is developed for four different bit rates: 188, 565, 1130, and 1500 Mb/s with optical sensitivities -38.5, -33, -30, dBm, respectively. The amplifier provides 2 V peak to peak output and 30 dB dynamic range.
{"title":"A High Speed GaAs Monolithic Transimpedance Amplifier","authors":"I. Bahl, E. Griffin, W. Powell, C. Ring","doi":"10.1109/MCS.1986.1114476","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114476","url":null,"abstract":"This paper describes the design method and test results for a novel transimpedance amplifier suitable for very high speed optical communications systems The amplifier chip is developed for four different bit rates: 188, 565, 1130, and 1500 Mb/s with optical sensitivities -38.5, -33, -30, dBm, respectively. The amplifier provides 2 V peak to peak output and 30 dB dynamic range.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"25 13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125746117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114475
H. Yen
Phased array radar, communication, telemetry, and electronic warfare systems frequently require the transmission and processing of gigahertz bandwidth signals. In airborne and space applications, where low weight and immunity from electromagnetic interference are desirable, low loss optical fibers with band-width distance products as great as 100 GHz · km are an ideal vehicle for the transmission of these broadband microwave signals.
{"title":"Optical Technology for Microwave Applications","authors":"H. Yen","doi":"10.1109/MCS.1986.1114475","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114475","url":null,"abstract":"Phased array radar, communication, telemetry, and electronic warfare systems frequently require the transmission and processing of gigahertz bandwidth signals. In airborne and space applications, where low weight and immunity from electromagnetic interference are desirable, low loss optical fibers with band-width distance products as great as 100 GHz · km are an ideal vehicle for the transmission of these broadband microwave signals.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122691724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114483
G. Barta, K. Jones, G. C. Herrick, E. Strid
A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.
宽带单片砷化镓桥接- t可变衰减器已与单片砷化镓有源功率分配器一起使用，形成紧凑的2至8 GHz调平环路，用于具有最小12dB调平范围和缓冲输出的RF源。衰减器内部通过使用片上GaAs运算放大器在1至10 GHz带宽上优化输入和输出返回损耗。有源功率分配器通过使用分布式放大，在1至10 GHz的带宽范围内为每个端口提供单位增益。整个4.5 cm × 42 cm的子系统是用RT-Duroid®®上的表面贴装封装实现的。
{"title":"A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator","authors":"G. Barta, K. Jones, G. C. Herrick, E. Strid","doi":"10.1109/MCS.1986.1114483","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114483","url":null,"abstract":"A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"71 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132025065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114479
A. Podell, W.W. Nelson
Producing inexpensive MMIC receiver front ends in large quantities has focused attention on details of MMIC design and fabrication that are different from laboratory, or small volume production. This paper discusses design and testing tradeoffs and the performance of the resulting packaged MMIC.
{"title":"High Volume, Low Cost, MMIC Receiver Front End","authors":"A. Podell, W.W. Nelson","doi":"10.1109/MCS.1986.1114479","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114479","url":null,"abstract":"Producing inexpensive MMIC receiver front ends in large quantities has focused attention on details of MMIC design and fabrication that are different from laboratory, or small volume production. This paper discusses design and testing tradeoffs and the performance of the resulting packaged MMIC.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131223974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114491
S. Ray, M. Walton
A monolithic optoelectronic receiver chip was designed and fabricated for operation at 1.0 Gbit/sec data transmission rate. The major components of the receiver chip are a fast photodiode, a preamplifier, and a 1:4 demultiplexer circuit fabricated on semi-insulating GaAs substrate. Optical/electrical functionality has been demonstrated at wafer level.
{"title":"Monolithic Optoelectronic Receiver for Gbit Operation","authors":"S. Ray, M. Walton","doi":"10.1109/MCS.1986.1114491","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114491","url":null,"abstract":"A monolithic optoelectronic receiver chip was designed and fabricated for operation at 1.0 Gbit/sec data transmission rate. The major components of the receiver chip are a fast photodiode, a preamplifier, and a 1:4 demultiplexer circuit fabricated on semi-insulating GaAs substrate. Optical/electrical functionality has been demonstrated at wafer level.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121468193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114477
P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao
An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.
{"title":"30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology","authors":"P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao","doi":"10.1109/MCS.1986.1114477","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114477","url":null,"abstract":"An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122402829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114487
H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato
Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.
{"title":"Low Noise Microwave HIFET Using MOCVD","authors":"H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato","doi":"10.1109/MCS.1986.1114487","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114487","url":null,"abstract":"Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"2 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124913554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-01DOI: 10.1109/MCS.1986.1114488
T. Hirota, H. Ogawa, Y. Tarusawa, K. Owada
A "planar" circuit configuration for MMIC (Monolithic Microwave Integrated Circuit) has been proposed. It uses coplanar waveguides and slotlines on the upper side of the substrate. Novel hybrid circuits have been fabricated. It has also been shown that small sized, balanced FET circuits can be achieved.
{"title":"Planar MMIC Hybrid Circuit and Frequency Converter","authors":"T. Hirota, H. Ogawa, Y. Tarusawa, K. Owada","doi":"10.1109/MCS.1986.1114488","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114488","url":null,"abstract":"A \"planar\" circuit configuration for MMIC (Monolithic Microwave Integrated Circuit) has been proposed. It uses coplanar waveguides and slotlines on the upper side of the substrate. Novel hybrid circuits have been fabricated. It has also been shown that small sized, balanced FET circuits can be achieved.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133922046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113627
P. Bauhahn, C. Butter, V. Sokolov, A. Contolatis
The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.
{"title":"30 GHz Multi-Bit Monolithic Phase Shifters","authors":"P. Bauhahn, C. Butter, V. Sokolov, A. Contolatis","doi":"10.1109/MCS.1985.1113627","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113627","url":null,"abstract":"The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115511140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113631
H. Macksey, H. Tserng, H. Shih
A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.
{"title":"A 2-W Ku-Band Monolithic GaAs FET Amplifier","authors":"H. Macksey, H. Tserng, H. Shih","doi":"10.1109/MCS.1985.1113631","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113631","url":null,"abstract":"A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115038221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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