Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113634
S. Bingham, S. McCarter, A. Pavio
A miniaturized 6.5 -16 GHz power amplifier module, which includes T/R switch, dual polarity power supply, switch driver and gate functions was designed using two types of broadband MMIC amplifiers. The two cascade designs were a 900 µm -1200 µm FET amplifier and a 300 µm -300 µm feedback amplifier which were used to provide large and small gain functions respectively. The module exhibits 35 dB of gain, 1 watt power output and 55 dB T/R switch isolation.
{"title":"A Miniaturized 6.5-16 GHz Monolithic Power Amplifier Module","authors":"S. Bingham, S. McCarter, A. Pavio","doi":"10.1109/MCS.1985.1113634","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113634","url":null,"abstract":"A miniaturized 6.5 -16 GHz power amplifier module, which includes T/R switch, dual polarity power supply, switch driver and gate functions was designed using two types of broadband MMIC amplifiers. The two cascade designs were a 900 µm -1200 µm FET amplifier and a 300 µm -300 µm feedback amplifier which were used to provide large and small gain functions respectively. The module exhibits 35 dB of gain, 1 watt power output and 55 dB T/R switch isolation.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128400054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113626
P. Saunier, H. Tserng, B. Kim, G. Westphal
The design, fabrication, and microwave performance of a monolithic four-stage GaAs dual-gate FET amplifier are described. A linear gain of 23 dB with 250 mW output power has been measured at 18 GHz. The highest power obtained was 500 mW with 21 dB gain at the same frequency. By varying the second gate bias voltage, a dynamic gain control range of more than 60 dB has been observed. The chip size is 6.45mm x 2.1mm x 0.1mm.
{"title":"Monolithic GaAs Dual-Gate FET Variable Power Amplifier Module","authors":"P. Saunier, H. Tserng, B. Kim, G. Westphal","doi":"10.1109/MCS.1985.1113626","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113626","url":null,"abstract":"The design, fabrication, and microwave performance of a monolithic four-stage GaAs dual-gate FET amplifier are described. A linear gain of 23 dB with 250 mW output power has been measured at 18 GHz. The highest power obtained was 500 mW with 21 dB gain at the same frequency. By varying the second gate bias voltage, a dynamic gain control range of more than 60 dB has been observed. The chip size is 6.45mm x 2.1mm x 0.1mm.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128109465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113648
M. Namordi, M. O'Connell, P. Newman
A 3-bit GaAs analog-to-digital converter (ADC) using a parallel architecture has been designed and fabricated. A latched regenerative comparator design approach is used. Depletion mode MESFET technology was used for circuit implementation. Successful functionality tests of the comparator and the ADC have been completed on the first circuits. These show that comparator offset uniformity needs to be improved. High-speed tests will be underway shortly with results to be presented at the conference.
{"title":"A 3-Bit GaAs Analog-to-Digital Converter","authors":"M. Namordi, M. O'Connell, P. Newman","doi":"10.1109/MCS.1985.1113648","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113648","url":null,"abstract":"A 3-bit GaAs analog-to-digital converter (ADC) using a parallel architecture has been designed and fabricated. A latched regenerative comparator design approach is used. Depletion mode MESFET technology was used for circuit implementation. Successful functionality tests of the comparator and the ADC have been completed on the first circuits. These show that comparator offset uniformity needs to be improved. High-speed tests will be underway shortly with results to be presented at the conference.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130985840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113633
B. Kim, H. Tserng, H. Shih
The main limitations of the output power of a distributed amplifier are the gate line loss and the gate-to-drain breakdown voltage. A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented. The device breakdown voltage has been improved by using an MBE grown material with two layers (low doped gate buffer layer and usual active layer). A monolithic GaAs distributed amplifier using 6 x 300 µm FETs has achieved an output power of 800 mW with 4dB gain. The power added efficiency was about 15%.
{"title":"High Power Distributed Amplifier Using MBE Synthesized Material","authors":"B. Kim, H. Tserng, H. Shih","doi":"10.1109/MCS.1985.1113633","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113633","url":null,"abstract":"The main limitations of the output power of a distributed amplifier are the gate line loss and the gate-to-drain breakdown voltage. A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented. The device breakdown voltage has been improved by using an MBE grown material with two layers (low doped gate buffer layer and usual active layer). A monolithic GaAs distributed amplifier using 6 x 300 µm FETs has achieved an output power of 800 mW with 4dB gain. The power added efficiency was about 15%.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123979175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113636
C. Chang, S. Wang, L.C.T. Liu, M. Siracusa, H. Yamasaki, J. Schellenberg
A production technology for high yield and high performance MMIC's has been developed. Two stage X-band power amplifier and low noise amplifiers were used as test vehicles in this producibility study. The power amplifier chips have consistently demonstrated a 1.5 watt output power with 9 dB gain and 20% power added efficiency. The low noise amplifier chips have achieved a reproducible performance of less than 3 dB noise figure with 20 dB gain. Producibility improvement of MMIC chip fabrication has achieved an average yield well in excess of 10%.
{"title":"Production Technology Development for High Yield, High Performance X-Band Monolithic Power and Low Noise Amplifiers","authors":"C. Chang, S. Wang, L.C.T. Liu, M. Siracusa, H. Yamasaki, J. Schellenberg","doi":"10.1109/MCS.1985.1113636","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113636","url":null,"abstract":"A production technology for high yield and high performance MMIC's has been developed. Two stage X-band power amplifier and low noise amplifiers were used as test vehicles in this producibility study. The power amplifier chips have consistently demonstrated a 1.5 watt output power with 9 dB gain and 20% power added efficiency. The low noise amplifier chips have achieved a reproducible performance of less than 3 dB noise figure with 20 dB gain. Producibility improvement of MMIC chip fabrication has achieved an average yield well in excess of 10%.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121101058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113632
M. Kobiki, Y. Mitsui, Y. Sasaki, M. Komaru, K. Seino, T. Takagi
A Ka-band GaAs power MMIC with source island via-hole PHS structure and monolithic power divider /combiner circuits was developed and reliability study was performed. This source island via-hole technique successfully reduced both thermal resistance and source parasitic inductance of the MMIC. The 3200 µm MMIC gave power output at 1dB gain compression of 1.1 W, linear power gain of 4.0 dB and power added efficiency of 10.8 % at 28 GHz. No failure was observed in the temperature cycling, the DC running and the high temperature storage tests.
{"title":"A Ka-Band GaAs Power MMIC","authors":"M. Kobiki, Y. Mitsui, Y. Sasaki, M. Komaru, K. Seino, T. Takagi","doi":"10.1109/MCS.1985.1113632","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113632","url":null,"abstract":"A Ka-band GaAs power MMIC with source island via-hole PHS structure and monolithic power divider /combiner circuits was developed and reliability study was performed. This source island via-hole technique successfully reduced both thermal resistance and source parasitic inductance of the MMIC. The 3200 µm MMIC gave power output at 1dB gain compression of 1.1 W, linear power gain of 4.0 dB and power added efficiency of 10.8 % at 28 GHz. No failure was observed in the temperature cycling, the DC running and the high temperature storage tests.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"34 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120818526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-01DOI: 10.1109/MCS.1985.1113637
A. Gupta, R. T. Chen, E. Sovero, J. Higgins
High electron mobility transistors (HEMTs) employing both single and quadruple GaAs/AIGaAs heterojunctions have been fabricated and tested for power at 10 GHz. The multiple heterojunction layer, with a two-dimensional electron gas (2-DEG) sheet carrier density of 3.2 x 10/sup12/ cm/sup -2/ significantly higher current capability (as required for microwave power devices) than the conventional structure where the 2-DEG density is limited to <= 10/sup 12/ cm/sup -2/. HEMTs with gate dimensions of 0.5 µm x 200 µm were mounted in X-band FET packages for rf evaluation. The QHJ HEMTs yielded a saturated power of 21 dBm (0.63 W/mm), small signal gain of 14.5 dB, power added efficiency of 39%, and third order IMD product of -19 dBc at saturation. The corresponding figures for the SHJ HEMTs were 18 dBm (0.32 W/mm), 15 dB, 43% and -14 dBc, respectively. These are the highest power densities yet reported for a HEMT.
{"title":"Power Saturation Characteristics of GaAs/AlGaAs High Electron Mobility Transistors","authors":"A. Gupta, R. T. Chen, E. Sovero, J. Higgins","doi":"10.1109/MCS.1985.1113637","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113637","url":null,"abstract":"High electron mobility transistors (HEMTs) employing both single and quadruple GaAs/AIGaAs heterojunctions have been fabricated and tested for power at 10 GHz. The multiple heterojunction layer, with a two-dimensional electron gas (2-DEG) sheet carrier density of 3.2 x 10/sup12/ cm/sup -2/ significantly higher current capability (as required for microwave power devices) than the conventional structure where the 2-DEG density is limited to <= 10/sup 12/ cm/sup -2/. HEMTs with gate dimensions of 0.5 µm x 200 µm were mounted in X-band FET packages for rf evaluation. The QHJ HEMTs yielded a saturated power of 21 dBm (0.63 W/mm), small signal gain of 14.5 dB, power added efficiency of 39%, and third order IMD product of -19 dBc at saturation. The corresponding figures for the SHJ HEMTs were 18 dBm (0.32 W/mm), 15 dB, 43% and -14 dBc, respectively. These are the highest power densities yet reported for a HEMT.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131637283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114527
C. Nishimoto, R. Larue, S. Bandy, M. Day, J. Eckstein, C. Webb, C. Yuen, G. Zdasiuk
A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.
采用0.3微米门长HEMT器件的低噪声2-20 GHz单片分布式放大器实现了11 dB +- 0.5 dB的增益。这代表了使用单场效应管增益单元的分布式放大器的最高增益。在中频(7-12 GHz)实现了创纪录的3 dB低噪声系数。电路设计采用5个宽度不同的HEMT晶体管，栅极采用电子束光刻技术制造。
{"title":"A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier","authors":"C. Nishimoto, R. Larue, S. Bandy, M. Day, J. Eckstein, C. Webb, C. Yuen, G. Zdasiuk","doi":"10.1109/MCS.1987.1114527","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114527","url":null,"abstract":"A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121049012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113645
B. Bayraktaroglu, H. Shih
This paper describes methods of integrating GaAs IMPATT diodes and impedance matching circuits on the same chip. Lumped element as well as distributed element matching circuits were used in two separate approaches. The common technology to both approaches is the use of thick layers of polyimide that form the dielectric medium for passive circuit elements. MBE grown double-drift GaAs IMPATT structures with AlGaAs etch stop layers were used to fabricate monolithic oscillators for the 30-90 GHz applications. The best overall performance was achieved at 32.5 GHz with 1.25.W cw output power and 27% efficiency.
{"title":"High Efficiency Millimeter Wave Monolithic IMPATT Oscillators","authors":"B. Bayraktaroglu, H. Shih","doi":"10.1109/MCS.1985.1113645","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113645","url":null,"abstract":"This paper describes methods of integrating GaAs IMPATT diodes and impedance matching circuits on the same chip. Lumped element as well as distributed element matching circuits were used in two separate approaches. The common technology to both approaches is the use of thick layers of polyimide that form the dielectric medium for passive circuit elements. MBE grown double-drift GaAs IMPATT structures with AlGaAs etch stop layers were used to fabricate monolithic oscillators for the 30-90 GHz applications. The best overall performance was achieved at 32.5 GHz with 1.25.W cw output power and 27% efficiency.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122885374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113649
T. Takada, Y. Shimazu, K. Yamasaki, M. Togashi, K. Hoshikawa, M. Idda
A GaAs four channel digital time switch having a 2.0 Gb/s throughput is developed. Low Power Source Coupled FET Logic (LSCFL) and 0.55 µm gate length buried p-layer SAINT-FETs are applied. The switch includes 1176 devices (FETs, diodes, and resistors). The 75 % fabrication yield is attained using dislocation free wafers.
{"title":"A 2 Gb/s Throughput GaAs Digital Time Switch LSI Using LSCFL","authors":"T. Takada, Y. Shimazu, K. Yamasaki, M. Togashi, K. Hoshikawa, M. Idda","doi":"10.1109/MCS.1985.1113649","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113649","url":null,"abstract":"A GaAs four channel digital time switch having a 2.0 Gb/s throughput is developed. Low Power Source Coupled FET Logic (LSCFL) and 0.55 µm gate length buried p-layer SAINT-FETs are applied. The switch includes 1176 devices (FETs, diodes, and resistors). The 75 % fabrication yield is attained using dislocation free wafers.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114459845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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