Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113635
John M. Bean, Stephen, R. Nelson, Ralph E. Williams
The design of a 6-18 GHz, two stage monolithic feedback amplifier is discussed, and the critical process and FET parameters are identified. Variations in circuit performance experienced during a pilot production run are correlated with the predictions of a sensitivity analysis. The critical parameters are substrate height, GaAs sheet resistivity, gate-source capacitance, transconductance, and drain-source resistance. Measured results show the importance of substrate height and sheet resistivity in the control of gain flatness.
{"title":"Design and Process Sensitivity of a Two Stage 6-18 GHz Monolithic Feedback Amplifier","authors":"John M. Bean, Stephen, R. Nelson, Ralph E. Williams","doi":"10.1109/MCS.1985.1113635","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113635","url":null,"abstract":"The design of a 6-18 GHz, two stage monolithic feedback amplifier is discussed, and the critical process and FET parameters are identified. Variations in circuit performance experienced during a pilot production run are correlated with the predictions of a sensitivity analysis. The critical parameters are substrate height, GaAs sheet resistivity, gate-source capacitance, transconductance, and drain-source resistance. Measured results show the importance of substrate height and sheet resistivity in the control of gain flatness.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116510101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114473
R. Larue, S. Bandy, G. Zdasiuk
A novel, monolithic, distributed amplifier has achieved a record gain of over 10 dB from 2-18 GHz. The design utilizes five quarter-micron gate length, cascode connected, FETs on epitaxial material . Circuit simulations predict over 10 dB gain from 2-30 GHz for an amplifier with seven active elements. Novel features of the design, fabrication and testing are discussed.
{"title":"A High Gain, Monolithic Distributed Amplifier Using Cascode Active Elements","authors":"R. Larue, S. Bandy, G. Zdasiuk","doi":"10.1109/MCS.1986.1114473","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114473","url":null,"abstract":"A novel, monolithic, distributed amplifier has achieved a record gain of over 10 dB from 2-18 GHz. The design utilizes five quarter-micron gate length, cascode connected, FETs on epitaxial material . Circuit simulations predict over 10 dB gain from 2-30 GHz for an amplifier with seven active elements. Novel features of the design, fabrication and testing are discussed.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132016865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114510
R. Ramachandran, S. Moghe, P. Ho, A. Podell
An MMIC frequency converter with an RF bandwidth of 8-15 GHz and an IF bandwidth of 1.5 GHz has been designed and built. The MMlC chip has15 dB conversion gain and includes a two-stage RF amplifier, a two-stage LO buffer amplifier, a double-balanced mixer and a three-stage IF amplifier. This high level of integration is realized on a 48 x 96 mil area, resulting in good RF yields. The circuit employs a push-pull configuration to eliminate the need for via-holes (low-inductance grounds) and facilitate a compact layout.
设计并实现了一个射频带宽为8 ~ 15ghz，中频带宽为1.5 GHz的MMIC变频器。MMlC芯片具有15db转换增益，包括一个两级射频放大器，一个两级LO缓冲放大器，一个双平衡混频器和一个三级中频放大器。这种高集成度在48 x 96 mil的面积上实现，从而产生良好的射频产量。该电路采用推挽配置，以消除对过孔(低电感接地)的需要，并便于紧凑的布局。
{"title":"An 8-15 GHz GaAs Monolithic Frequency Converter","authors":"R. Ramachandran, S. Moghe, P. Ho, A. Podell","doi":"10.1109/MCS.1987.1114510","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114510","url":null,"abstract":"An MMIC frequency converter with an RF bandwidth of 8-15 GHz and an IF bandwidth of 1.5 GHz has been designed and built. The MMlC chip has15 dB conversion gain and includes a two-stage RF amplifier, a two-stage LO buffer amplifier, a double-balanced mixer and a three-stage IF amplifier. This high level of integration is realized on a 48 x 96 mil area, resulting in good RF yields. The circuit employs a push-pull configuration to eliminate the need for via-holes (low-inductance grounds) and facilitate a compact layout.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131718239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113640
K. Kanazawa, M. Kazumura, S. Nambu, G. Kanô, I. Teramoto
A double-balanced dual-gate FET mixer has been developed aiming at the application to a front-end circuit of the UHF receivers. An experimental IC has exhibited a 6 - 8 dB conversion gain without matching over a wide frequency range from 100 MHz to 800 MHz with the well suppressed RF/LO feedthough by more than 20 dB and third-order intermodulation product of -60 dB.
{"title":"A GaAs Double-Balanced Dual-Gate FET Mixer IC for UHF Receiver Front-End Applications","authors":"K. Kanazawa, M. Kazumura, S. Nambu, G. Kanô, I. Teramoto","doi":"10.1109/MCS.1985.1113640","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113640","url":null,"abstract":"A double-balanced dual-gate FET mixer has been developed aiming at the application to a front-end circuit of the UHF receivers. An experimental IC has exhibited a 6 - 8 dB conversion gain without matching over a wide frequency range from 100 MHz to 800 MHz with the well suppressed RF/LO feedthough by more than 20 dB and third-order intermodulation product of -60 dB.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115093954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/mcs.1985.1113643
S. Nightingale, M. Upton, U. Mishra, S. Palmateer, P.M. Smith
A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition and low parasitic Mott diodes. The diodes and mixer circuit were developed on General Electric grown MBE material and were fabricated using a plated air bridge technology. Measurements on the diode at DC and RF showed that the zero bias junction capacitance was 0.025 pF and the series resistance was 10 ohms. A conversion loss of 6 dB was measured at 30 GHz with a 1 GHz IF.
{"title":"A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element","authors":"S. Nightingale, M. Upton, U. Mishra, S. Palmateer, P.M. Smith","doi":"10.1109/mcs.1985.1113643","DOIUrl":"https://doi.org/10.1109/mcs.1985.1113643","url":null,"abstract":"A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition and low parasitic Mott diodes. The diodes and mixer circuit were developed on General Electric grown MBE material and were fabricated using a plated air bridge technology. Measurements on the diode at DC and RF showed that the zero bias junction capacitance was 0.025 pF and the series resistance was 10 ohms. A conversion loss of 6 dB was measured at 30 GHz with a 1 GHz IF.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131041256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114474
T. Mckay, R. Williams
A high performance 2-18.5 GHz monolithic GaAs MESFET distributed ampIifier has been designed and fabricated. The m-derived drain line design is analyzed theoretically and a closed form gain equation is presented. Theoretical predictions are compared to measured results and more complicated CAD models. The measured small signal gain is typically 8.0 /sup +-/ 0.25dB from 2-18.5 GHz at standard bias. Typical input return loss is greater than 12dB and the output return loss is greater than 15dB. The saturated output power is in excess of 23dBm over most of the band and the noise figure is less than 7.5dB.
{"title":"A High Performance 2-18.5 GHz Distributed Amplifier, Theory and Experiment","authors":"T. Mckay, R. Williams","doi":"10.1109/MCS.1986.1114474","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114474","url":null,"abstract":"A high performance 2-18.5 GHz monolithic GaAs MESFET distributed ampIifier has been designed and fabricated. The m-derived drain line design is analyzed theoretically and a closed form gain equation is presented. Theoretical predictions are compared to measured results and more complicated CAD models. The measured small signal gain is typically 8.0 /sup +-/ 0.25dB from 2-18.5 GHz at standard bias. Typical input return loss is greater than 12dB and the output return loss is greater than 15dB. The saturated output power is in excess of 23dBm over most of the band and the noise figure is less than 7.5dB.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132937633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114531
J. Pavio
Automated alloy attachment of GaAs MMIC's is presented utilizing a reflow furnace for attachment of multiple devices at one time rather than manual scrub of each monolithic separately. Reflow characteristics of a variety of solders were analyzed as well as behavior of those solders during long term temperature bake and during 1000 cycles of thermal cycling. RF and thermal impedance data was measured through 600 thermal cycles in order to verify Iong term electrical performance. Finally, the study addressed fractures in GaAs due to thermal expansion differences between the alloy and the GaAs MMIC itself. The main objective for the monolithic attachment study was to identify alloy materials and to develop processes which provide the following characteristics.
{"title":"Successful Automated Alloy Attachment of GaAs MMIC's","authors":"J. Pavio","doi":"10.1109/MCS.1987.1114531","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114531","url":null,"abstract":"Automated alloy attachment of GaAs MMIC's is presented utilizing a reflow furnace for attachment of multiple devices at one time rather than manual scrub of each monolithic separately. Reflow characteristics of a variety of solders were analyzed as well as behavior of those solders during long term temperature bake and during 1000 cycles of thermal cycling. RF and thermal impedance data was measured through 600 thermal cycles in order to verify Iong term electrical performance. Finally, the study addressed fractures in GaAs due to thermal expansion differences between the alloy and the GaAs MMIC itself. The main objective for the monolithic attachment study was to identify alloy materials and to develop processes which provide the following characteristics.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132241471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114503
P. Asbeck, K. Wang, D.L. Miller, G. Sullivan, N. Sheng, E. Sovero, J. Higgins
This paper reviews the present status of GaAIAs/ GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f/sub max/ above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BV/sub CBO/) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
{"title":"Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits","authors":"P. Asbeck, K. Wang, D.L. Miller, G. Sullivan, N. Sheng, E. Sovero, J. Higgins","doi":"10.1109/MCS.1987.1114503","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114503","url":null,"abstract":"This paper reviews the present status of GaAIAs/ GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f/sub max/ above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BV/sub CBO/) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134415691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114526
G. Lizama, T. Andrade, R. Benton
This paper describes the performance of a voltage-controlled attenuator with a 12 dB linear attenuation vs. control voltage range. This linear attenuator greatly facilitates the realization of both closed and open loop gain compensation networks. Over the -55°C to 85°C range the attenuator recorded a 7.2 +- 1 dB/V linear transfer function while using only 25 mW from a single 4 V power supply.
{"title":"1-6 GHz GaAs MMIC Linear Attenuator with Integral Drivers","authors":"G. Lizama, T. Andrade, R. Benton","doi":"10.1109/MCS.1987.1114526","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114526","url":null,"abstract":"This paper describes the performance of a voltage-controlled attenuator with a 12 dB linear attenuation vs. control voltage range. This linear attenuator greatly facilitates the realization of both closed and open loop gain compensation networks. Over the -55°C to 85°C range the attenuator recorded a 7.2 +- 1 dB/V linear transfer function while using only 25 mW from a single 4 V power supply.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116975622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114506
J. Berenz, H. Yen, R. Esfandiari, K. Nakano, T. Sato, J. Velebir, K. Ip
The design, fabrication, and performance of a single-stage 44 GHz monolithic HEMT low noise amplifier are described. The chip includes a single heterojunction HEMT with matching and biasing circuits. Greater than 5 dB gain was measured from 43.5 to 45.5 GHz and a noise figure of 5 dB with the associated gain of 5.5 dB was achieved at 44.5 GHz. The chip size is 1.25mm x 1.0mm.
{"title":"44 GHz Monolithic Low Noise Amplifier","authors":"J. Berenz, H. Yen, R. Esfandiari, K. Nakano, T. Sato, J. Velebir, K. Ip","doi":"10.1109/MCS.1987.1114506","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114506","url":null,"abstract":"The design, fabrication, and performance of a single-stage 44 GHz monolithic HEMT low noise amplifier are described. The chip includes a single heterojunction HEMT with matching and biasing circuits. Greater than 5 dB gain was measured from 43.5 to 45.5 GHz and a noise figure of 5 dB with the associated gain of 5.5 dB was achieved at 44.5 GHz. The chip size is 1.25mm x 1.0mm.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126505821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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