Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113639
T. Nakata, S. Miyazaki, K. Shirotori
Using Si, an excellent performances, 0.5-2.6GHz bandwidth and 23dB gain, monolithic wideband amplifier IC has been developed, of which input and output impedances are matched to 50 Omega. The f/sub T/=l0GHz DNP-II manufacturing process with optimization for microwave analog ICs has been developed for this IC. And a single-ended three stages amplifier circuit with local feedback loops is adopted for this monolithic circuit.
{"title":"0.5-2.6GHz Si-Monolithic Wideband Amplifier IC","authors":"T. Nakata, S. Miyazaki, K. Shirotori","doi":"10.1109/MCS.1985.1113639","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113639","url":null,"abstract":"Using Si, an excellent performances, 0.5-2.6GHz bandwidth and 23dB gain, monolithic wideband amplifier IC has been developed, of which input and output impedances are matched to 50 Omega. The f/sub T/=l0GHz DNP-II manufacturing process with optimization for microwave analog ICs has been developed for this IC. And a single-ended three stages amplifier circuit with local feedback loops is adopted for this monolithic circuit.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130521839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/mcs.1986.1114468
E. Maynard
The Microwave/Millimeter Wave Monolithic Initiative (M/sup 3/I) was started by concerns in the smart munitions guidance and control community over the projected costs of millimeter wave seekers. A survey of monolithic analog integrated circuits was made by a DoD Working Group, consisting of personnel from OSD, Army, Navy, Air Force, DARPA and SDIO. The team visited 23 companies and several government facilities engaged in development of the technology.
{"title":"Microwave/Millimeter Wave Monolithic Integrated Circuits (MIMIC) Program","authors":"E. Maynard","doi":"10.1109/mcs.1986.1114468","DOIUrl":"https://doi.org/10.1109/mcs.1986.1114468","url":null,"abstract":"The Microwave/Millimeter Wave Monolithic Initiative (M/sup 3/I) was started by concerns in the smart munitions guidance and control community over the projected costs of millimeter wave seekers. A survey of monolithic analog integrated circuits was made by a DoD Working Group, consisting of personnel from OSD, Army, Navy, Air Force, DARPA and SDIO. The team visited 23 companies and several government facilities engaged in development of the technology.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117075324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114532
A. Bettner, B. Hundley, P. Salisbury
Multilayer thick-film circuits have been developed to provide single supply biasing and reactive matching to MMIC chips. The result is a method of achieving large amounts of gain at extremely low cost.
{"title":"Low Cost MMIC Insertion Using Thick Film Processing","authors":"A. Bettner, B. Hundley, P. Salisbury","doi":"10.1109/MCS.1987.1114532","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114532","url":null,"abstract":"Multilayer thick-film circuits have been developed to provide single supply biasing and reactive matching to MMIC chips. The result is a method of achieving large amounts of gain at extremely low cost.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116719995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114469
S. Wang, K.G. Wang, C.D. Chang
State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in /sup I/DSS and /sup V/PO.
{"title":"High Performance Monolithic Power Amplifier Using a Unique Ion Implantation Process","authors":"S. Wang, K.G. Wang, C.D. Chang","doi":"10.1109/MCS.1986.1114469","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114469","url":null,"abstract":"State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in /sup I/DSS and /sup V/PO.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125222146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114472
J. Orr
A 2 to 26.5 GHz monolithic distributed amplifier with 18.75 +- 1.25 dB of gain, better than 12 dB return losses at input and output, and greater than 40 dB of isolation has been realized on a single 3.02mm x 1.62mm chip.
{"title":"A Stable 2-26.5 GHz Two-Stage Dual-Gate Distributed MMIC Amplifier","authors":"J. Orr","doi":"10.1109/MCS.1986.1114472","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114472","url":null,"abstract":"A 2 to 26.5 GHz monolithic distributed amplifier with 18.75 +- 1.25 dB of gain, better than 12 dB return losses at input and output, and greater than 40 dB of isolation has been realized on a single 3.02mm x 1.62mm chip.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128517902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113642
L.T. Yuan, P. Asher
A fully monolithic balanced mixer fabricated on a GaAs substrate for operation at W-Band (75 to 110 GHz) is described. The overall size of the mixer chip is 0.075" x 0.075" x 0.004". A minimum conversion loss of 4.6 dB has been measured at 91.1 GHz for narrow band operation. For broadband operation, a conversion loss of less than 8 dB has been achieved over an RF range of 73.6 to 83.6 GHz with a corresponding IF range of 8 to 18 GHz.
{"title":"A W-Band Monolithic Balanced Mixer","authors":"L.T. Yuan, P. Asher","doi":"10.1109/MCS.1985.1113642","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113642","url":null,"abstract":"A fully monolithic balanced mixer fabricated on a GaAs substrate for operation at W-Band (75 to 110 GHz) is described. The overall size of the mixer chip is 0.075\" x 0.075\" x 0.004\". A minimum conversion loss of 4.6 dB has been measured at 91.1 GHz for narrow band operation. For broadband operation, a conversion loss of less than 8 dB has been achieved over an RF range of 73.6 to 83.6 GHz with a corresponding IF range of 8 to 18 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"316 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124475917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114480
D.C. Wang, R. G. Pauley, S. Wang, L.C.T. Liu
A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and standard deviation of 0.1 dB with an associated gain of 22.5 dB and standard deviation of 0.8 dB at center frequency band of 9.5 GHz has been measured.
{"title":"Cost-Effective High Performance Monolithic X-Band Low Noise Amplifiers","authors":"D.C. Wang, R. G. Pauley, S. Wang, L.C.T. Liu","doi":"10.1109/MCS.1986.1114480","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114480","url":null,"abstract":"A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and standard deviation of 0.1 dB with an associated gain of 22.5 dB and standard deviation of 0.8 dB at center frequency band of 9.5 GHz has been measured.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121547903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114533
R. Esfandiari, D. Yang, S. Chan, S. Lin, R. K. Ellis
The development of a low cost, high throughput testing/packaging procedure for GaAs MMIC is described. Automated on-wafer RF and DC testing is essential for volume production of MMIC chips. However most MMIC circuits cannot be tested at wafer level due to lack of proper RF test environment. The proposed frame tape chip carrier approach takes full advantage of the RF probe system. This technique reduces the high cost of RF package measurements and reliability testing. The measurement and packaging is demonstrated on several MMIC chips. It can easily be automated for high volume production.
{"title":"A Low Cost Packaging/Testing Procedure for Manufacturing GaAs MMIC","authors":"R. Esfandiari, D. Yang, S. Chan, S. Lin, R. K. Ellis","doi":"10.1109/MCS.1987.1114533","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114533","url":null,"abstract":"The development of a low cost, high throughput testing/packaging procedure for GaAs MMIC is described. Automated on-wafer RF and DC testing is essential for volume production of MMIC chips. However most MMIC circuits cannot be tested at wafer level due to lack of proper RF test environment. The proposed frame tape chip carrier approach takes full advantage of the RF probe system. This technique reduces the high cost of RF package measurements and reliability testing. The measurement and packaging is demonstrated on several MMIC chips. It can easily be automated for high volume production.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122930639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114519
V. Sokolov, J. Geddes, A. Contolatis
A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
{"title":"Two stage dual Gate MESFET Monolithic Gain Control Amplifier for Ka-Band","authors":"V. Sokolov, J. Geddes, A. Contolatis","doi":"10.1109/MCS.1987.1114519","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114519","url":null,"abstract":"A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122906592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114528
K.G. Wang, S. Wang
State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB associated gain at 9.5 GHz. The dc yield of the amplifier chips is better than 40 percent.
采用高产量、平面离子注入工艺制造出了最先进的砷化镓低噪声 MESFET 和单片放大器。0.5 微米栅极场效应晶体管在 12 千兆赫时的噪声系数为 1.2 分贝，相关增益为 8.8 分贝；在 18 千兆赫时的噪声系数为 1.7 分贝，相关增益为 6.6 分贝。采用这种 FET 工艺的两级单片放大器在 9.5 GHz 时实现了 1.8 dB 的噪声系数和 23.6 dB 的相关增益。放大器芯片的直流成品率优于 40%。
{"title":"State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET and Monolithic Amplifier","authors":"K.G. Wang, S. Wang","doi":"10.1109/MCS.1987.1114528","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114528","url":null,"abstract":"State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB associated gain at 9.5 GHz. The dc yield of the amplifier chips is better than 40 percent.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126675863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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