Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113638
R. Lehmann, D. Heston
An X-band monolithic three-stage low noise amplifier (LNA) employing series feedback has demonstrated 1.8 dB noise figure with 30.0 dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input VSWR match.
{"title":"X-Band Monolithic Series Feedback LNA","authors":"R. Lehmann, D. Heston","doi":"10.1109/MCS.1985.1113638","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113638","url":null,"abstract":"An X-band monolithic three-stage low noise amplifier (LNA) employing series feedback has demonstrated 1.8 dB noise figure with 30.0 dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input VSWR match.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121388944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113641
E. Bastida, G. Donzelli
The paper describes a novel technology for producing micron and submicron gate FET devices, with improved gain and noise performances. The technique is particularly attractive for the production of very low noise devices and is very useful in monolithic circuit fabrication. In the production of high-power devices the technique has the advantage of not requiring complicated interdigitated structures. A noise figure improvement of 0.4 dB at 10 GHz was achieved using this technology. As an example of the developed technique, a two-stage monolithic preamplifier (2.8 dB N.F., 15 dB gain between 11.7 and 12.5 GHz) is described.
本文介绍了一种生产微米和亚微米栅极场效应晶体管器件的新技术，该技术可提高器件的增益和噪声性能。该技术对生产低噪声器件特别有吸引力，在单片电路制造中非常有用。在大功率器件的生产中，该技术的优点是不需要复杂的交叉结构。使用该技术，在10 GHz时噪声系数提高了0.4 dB。作为开发技术的一个例子，描述了一个两级单片前置放大器(2.8 dB N.F, 15 dB增益在11.7和12.5 GHz之间)。
{"title":"Air Bridge Gate FET for GaAs Monolithic Circuits","authors":"E. Bastida, G. Donzelli","doi":"10.1109/MCS.1985.1113641","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113641","url":null,"abstract":"The paper describes a novel technology for producing micron and submicron gate FET devices, with improved gain and noise performances. The technique is particularly attractive for the production of very low noise devices and is very useful in monolithic circuit fabrication. In the production of high-power devices the technique has the advantage of not requiring complicated interdigitated structures. A noise figure improvement of 0.4 dB at 10 GHz was achieved using this technology. As an example of the developed technique, a two-stage monolithic preamplifier (2.8 dB N.F., 15 dB gain between 11.7 and 12.5 GHz) is described.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132828279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113644
A. Chu, W. Courtney, L. Mahoney, M. Manfra, A. Calawa
A monolithic mixer circuit capable of performing either a receiver or transmitter function has been fabricated. The mode of operation is determined by applying either forward bias or reverse bias to a pair of mixer diodes. The circuit integrates Schottky-barrier diodes, bias lines, Ta/sub 2/O/sub 5/ blocking and by-pass capacitors, a radial line stub filter and a microstrip branch-line coupler. For the receiver function the unit exhibits a conversion loss of 6.5 +- 0.5 dB from 34 to 36 GHz. For the transmitter function the circuit directs the signal from the local oscillator port to the antenna port with an insertion loss of approximately 2 dB at 33.5 GHz over a bandwidth of 1 GHz.
{"title":"Dual Function Mixer Circuit for Millimeter Wave Transceiver Applications","authors":"A. Chu, W. Courtney, L. Mahoney, M. Manfra, A. Calawa","doi":"10.1109/MCS.1985.1113644","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113644","url":null,"abstract":"A monolithic mixer circuit capable of performing either a receiver or transmitter function has been fabricated. The mode of operation is determined by applying either forward bias or reverse bias to a pair of mixer diodes. The circuit integrates Schottky-barrier diodes, bias lines, Ta/sub 2/O/sub 5/ blocking and by-pass capacitors, a radial line stub filter and a microstrip branch-line coupler. For the receiver function the unit exhibits a conversion loss of 6.5 +- 0.5 dB from 34 to 36 GHz. For the transmitter function the circuit directs the signal from the local oscillator port to the antenna port with an insertion loss of approximately 2 dB at 33.5 GHz over a bandwidth of 1 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133213337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114525
D.C. Yang, R. Esfandiari, T.S. Lin, T. O'Neill
A wideband GaAs MMIC receiver module has been developed using half-micron gate MESFET technology. The fabrication process used is optical lithography with ion-implanted undoped LEC GaAs wafers. The module consists of three generic monolithic chips: an RF amplifier, an IF amplifier, and an image rejection filter which is integrated on a dual-gate MESFET mixer chip. The RF input frequency is 6 to 10 GHz and the IF output is at 3 GHz. Test results have shown an overall conversion gain of more than 20 dB, and less than a 5.5 dB noise figure. The isolation batwean RF and IF ports is better than 22 dB, between LO and IF is more than 30 dB, and between LO and RF isolation is 20 dB. The DC functional yield of more than 70-80% has also been achieved for each chip type.
{"title":"Wideband GaAs MMIC Receiver","authors":"D.C. Yang, R. Esfandiari, T.S. Lin, T. O'Neill","doi":"10.1109/MCS.1987.1114525","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114525","url":null,"abstract":"A wideband GaAs MMIC receiver module has been developed using half-micron gate MESFET technology. The fabrication process used is optical lithography with ion-implanted undoped LEC GaAs wafers. The module consists of three generic monolithic chips: an RF amplifier, an IF amplifier, and an image rejection filter which is integrated on a dual-gate MESFET mixer chip. The RF input frequency is 6 to 10 GHz and the IF output is at 3 GHz. Test results have shown an overall conversion gain of more than 20 dB, and less than a 5.5 dB noise figure. The isolation batwean RF and IF ports is better than 22 dB, between LO and IF is more than 30 dB, and between LO and RF isolation is 20 dB. The DC functional yield of more than 70-80% has also been achieved for each chip type.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130037713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114521
M. Schindler, A. Morris
Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.
{"title":"DC-40 GHz and 20-40 GHz MMIC SPDT Switches","authors":"M. Schindler, A. Morris","doi":"10.1109/MCS.1987.1114521","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114521","url":null,"abstract":"Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133263511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114470
S. Moghe, R. Genin
A low cost, 3-7 GHz, 1/2 Watt MMIC GaAs amplifier has been successfully designed and tested. The amplifier features small chip size (1.2 mm sq.), high gain (12 +-1.5 dB), high power added efficiency (20%), good RF yield (57%) and high tolerance to process variations. Packaged amplifiers were built with this chip for both the 2-6 GHz and the 5.9-6.4 GHz bands. Saturated output power of 25 dBm was achieved in the 2-6 GHz band, and 27 dBm in the 5.9-6.4 GHz band.
{"title":"A Low Cost, 3-7 GHz, 1/2 Watt MMIC GaAs Amplifier","authors":"S. Moghe, R. Genin","doi":"10.1109/MCS.1986.1114470","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114470","url":null,"abstract":"A low cost, 3-7 GHz, 1/2 Watt MMIC GaAs amplifier has been successfully designed and tested. The amplifier features small chip size (1.2 mm sq.), high gain (12 +-1.5 dB), high power added efficiency (20%), good RF yield (57%) and high tolerance to process variations. Packaged amplifiers were built with this chip for both the 2-6 GHz and the 5.9-6.4 GHz bands. Saturated output power of 25 dBm was achieved in the 2-6 GHz band, and 27 dBm in the 5.9-6.4 GHz band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129090746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114471
E. Chase, W. Kennan
This paper describes the design, implemental ion and performance of a power distributed amplifier with a minimum gain of 5dB , input and output VSWR less than 1.5:1, and greater than 22dBm of 1dB compressed power over the 2 to 18GHz band. This amplifier makes use of several circuit design advances to improve both bandwidth and power capability and measures 1.0mm by 1.4mm (1.4 sq. mm).
{"title":"A Power Distributed Amplifier Using Constant-R Networks","authors":"E. Chase, W. Kennan","doi":"10.1109/MCS.1986.1114471","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114471","url":null,"abstract":"This paper describes the design, implemental ion and performance of a power distributed amplifier with a minimum gain of 5dB , input and output VSWR less than 1.5:1, and greater than 22dBm of 1dB compressed power over the 2 to 18GHz band. This amplifier makes use of several circuit design advances to improve both bandwidth and power capability and measures 1.0mm by 1.4mm (1.4 sq. mm).","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124786864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1987.1114529
C. Hutchinson, W. Kennan
A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.
{"title":"A Low Noise Distributed Amplifier with Gain Control","authors":"C. Hutchinson, W. Kennan","doi":"10.1109/MCS.1987.1114529","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114529","url":null,"abstract":"A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115193131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1985.1113630
D. Jager
Nonlinear wave propagation along periodic Schottky slow-wave structures with voltage dependent capacitance is analytically described by simple wave equations. As an examplary result of the theory, a special structure is proposed which can be used for traveling-wave second harmonic generation or parametric amplification with high efficiency. This is experimentally verified on a model line.
{"title":"Nonlinear Slow-Wave Propagation On Periodic Schottky Coplanar Lines","authors":"D. Jager","doi":"10.1109/MCS.1985.1113630","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113630","url":null,"abstract":"Nonlinear wave propagation along periodic Schottky slow-wave structures with voltage dependent capacitance is analytically described by simple wave equations. As an examplary result of the theory, a special structure is proposed which can be used for traveling-wave second harmonic generation or parametric amplification with high efficiency. This is experimentally verified on a model line.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126980522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/MCS.1986.1114492
L.C.T. Liu, C.S. Liu, J. Kessler, S. Wang
Several monolithic integrated circuits have been developed to make a 30 GHz receiver. The LNA chip has 7 dB noise figure with 14 dB gain. The IF amplifier has 13 dB gain with 30 dB control range. The mixer and phase shifter have conversion loss and insertion loss of 10.5 dB and 1.6 dB, respectively.
{"title":"A 30 GHz Monolithic Receiver","authors":"L.C.T. Liu, C.S. Liu, J. Kessler, S. Wang","doi":"10.1109/MCS.1986.1114492","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114492","url":null,"abstract":"Several monolithic integrated circuits have been developed to make a 30 GHz receiver. The LNA chip has 7 dB noise figure with 14 dB gain. The IF amplifier has 13 dB gain with 30 dB control range. The mixer and phase shifter have conversion loss and insertion loss of 10.5 dB and 1.6 dB, respectively.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131219552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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