Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355773
A. Nemecek, K. Oberhauser, G. Zach, H. Zimmermann
A 32 pixel line sensor is presented for range finding applications of non-cooperative targets based on the time-of-flight (TOF) principle of modulated light. The sensor is realized as an optoelectronic integrated circuit (OEIC) containing the PIN photodiode with a high bandwidth of >1 GHz together with a high responsivity of 0.45 A/W at 660 nm and a novel, quasi differential correlating active integrator circuit in each pixel. Distance information is gained in every pixel, integrating the weak received signal correlated with the transmitted modulation signal. The single pixel achieves a minimum standard deviation of 8.5 mm in a measurement range of 1.5 m - 3.2 m with an optical transmission power of 1.5 mW and a plain white paper target. Exemplarily a scanned 3D depth image of the university logo demonstrates the potential of the sensor. Single pixel size is 210 mum times 105 mum with an optical fill factor of 45%. The sensor chip was fabricated in a 0.6 mum BiCMOS process including PIN-technology.
基于调制光的飞行时间(TOF)原理，提出了一种用于非合作目标测距的32像素线传感器。该传感器由一个光电集成电路(OEIC)实现，该光电集成电路包含一个带宽> 1ghz的PIN光电二极管，在660 nm处具有0.45 a /W的高响应性，每个像素都有一个新颖的准微分相关有源积分器电路。将接收到的微弱信号与发射调制信号相结合，得到每个像素的距离信息。在1.5 m ~ 3.2 m的测量范围内，单像元的最小标准偏差为8.5 mm，光传输功率为1.5 mW，目标为普通白纸。举例来说，大学标志的三维深度扫描图像展示了传感器的潜力。单像素大小为210 mum × 105 mum，光学填充系数为45%。该传感器芯片采用了0.6 μ m的BiCMOS工艺，其中包括pin技术。
{"title":"Distance Measurement Line Sensor with PIN Photodiodes","authors":"A. Nemecek, K. Oberhauser, G. Zach, H. Zimmermann","doi":"10.1109/ICSENS.2007.355773","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355773","url":null,"abstract":"A 32 pixel line sensor is presented for range finding applications of non-cooperative targets based on the time-of-flight (TOF) principle of modulated light. The sensor is realized as an optoelectronic integrated circuit (OEIC) containing the PIN photodiode with a high bandwidth of >1 GHz together with a high responsivity of 0.45 A/W at 660 nm and a novel, quasi differential correlating active integrator circuit in each pixel. Distance information is gained in every pixel, integrating the weak received signal correlated with the transmitted modulation signal. The single pixel achieves a minimum standard deviation of 8.5 mm in a measurement range of 1.5 m - 3.2 m with an optical transmission power of 1.5 mW and a plain white paper target. Exemplarily a scanned 3D depth image of the university logo demonstrates the potential of the sensor. Single pixel size is 210 mum times 105 mum with an optical fill factor of 45%. The sensor chip was fabricated in a 0.6 mum BiCMOS process including PIN-technology.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133408216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355823
T. Matsuo, Jinxing Liang, J. Pawłat, T. Ueda
Diode-bridge type capacitance detection circuit was developed in order to detect very small variation of differential capacitances in higher resolution. The circuit was designed for a comb structure tilt sensor, which was made of quartz crystal and had several movable electrodes between fixed electrodes. The circuit's output was almost proportional to the displacement of the movable electrode. Over 100 kHz AC voltage was supplied to obtain output signal sufficiently. In order to prevent decrease of the sensitivity, the diode-bridge part was composed of commercial PIN diodes, which had very low junction capacitance (less than 1 pF), and was mounted in small ceramic package with the tilt sensor. At present, the resolution of 0.0015 degree was obtained using the combination of the sensor and the detection circuit. It corresponded to the resolution of about less than 4.5 aF.
{"title":"Study on a Diode-bridge Type Capacitance Detection Circuit for Differential Capacitive Sensor","authors":"T. Matsuo, Jinxing Liang, J. Pawłat, T. Ueda","doi":"10.1109/ICSENS.2007.355823","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355823","url":null,"abstract":"Diode-bridge type capacitance detection circuit was developed in order to detect very small variation of differential capacitances in higher resolution. The circuit was designed for a comb structure tilt sensor, which was made of quartz crystal and had several movable electrodes between fixed electrodes. The circuit's output was almost proportional to the displacement of the movable electrode. Over 100 kHz AC voltage was supplied to obtain output signal sufficiently. In order to prevent decrease of the sensitivity, the diode-bridge part was composed of commercial PIN diodes, which had very low junction capacitance (less than 1 pF), and was mounted in small ceramic package with the tilt sensor. At present, the resolution of 0.0015 degree was obtained using the combination of the sensor and the detection circuit. It corresponded to the resolution of about less than 4.5 aF.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133729468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355879
S. Yamakawa, K. Amaya, M. Parameswaran
This paper presents the nano-resolution measurement of magnetic fields near a magnetic probe using a thin-film magnetic sensor. The measurement method consists of a process, where the thin-film magnetic sensor is scanned over the sample, followed by a deconvolution scheme. In the scanning process, the thin-film magnetic sensor is scanned over the sample perpendicularly to the sensor. The sample is rotated horizontally under the sensor so that data measurements are obtained at different angles and positions. The deconvolution can be performed using existing methods, which are common in the field of computed tomography. An experiment was performed to verify the technique's capability of measuring a magnetic field using a thin-film magnetic sensor. Currently, thin-film magnetic sensors are used as reading heads in hard drive disks (HDD). At present, the film thickness of the heads is less than 10nm. Previously, the resolution of the measurement was limited by the width of the sensor (ie. 100nm) which is always greater than the thickness. However, the new technique has the same resolution as the film thickness (ie. 10nm).
{"title":"Nano-resolution reconstruction of magnetic fields near a magnetic probe using a thin-film magnetic sensor","authors":"S. Yamakawa, K. Amaya, M. Parameswaran","doi":"10.1109/ICSENS.2007.355879","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355879","url":null,"abstract":"This paper presents the nano-resolution measurement of magnetic fields near a magnetic probe using a thin-film magnetic sensor. The measurement method consists of a process, where the thin-film magnetic sensor is scanned over the sample, followed by a deconvolution scheme. In the scanning process, the thin-film magnetic sensor is scanned over the sample perpendicularly to the sensor. The sample is rotated horizontally under the sensor so that data measurements are obtained at different angles and positions. The deconvolution can be performed using existing methods, which are common in the field of computed tomography. An experiment was performed to verify the technique's capability of measuring a magnetic field using a thin-film magnetic sensor. Currently, thin-film magnetic sensors are used as reading heads in hard drive disks (HDD). At present, the film thickness of the heads is less than 10nm. Previously, the resolution of the measurement was limited by the width of the sensor (ie. 100nm) which is always greater than the thickness. However, the new technique has the same resolution as the film thickness (ie. 10nm).","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114449802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355561
S. Anuradha, K. Rajanna
This paper describes the design and development of a thermoelectric gas sensor suitable for the detection of volatile organic compounds (VOCs). In order to enhance the seebeck coefficient of the sensor, we have deposited chromium metal films on a limited area of the glass substrate. Tin oxide thin film was deposited on top of these metal films. The resulting metal/semiconductor film exhibits a high seebeck coefficient of 400 muV/degC. Platinum catalyst film deposited on the oxide film to create the necessary temperature gradient resulted in further enhancement in the sensitivity of the sensor to target gases. The sensor shows high sensitivity to ppm-change in the concentration of target hydrocarbons at a relatively low temperature of 120degC.
本文介绍了一种适用于挥发性有机化合物(VOCs)检测的热电式气体传感器的设计与研制。为了提高传感器的塞贝克系数，我们在玻璃基板的有限区域上沉积了铬金属薄膜。在这些金属薄膜上沉积了氧化锡薄膜。所得的金属/半导体薄膜具有400 μ v /℃的高塞贝克系数。铂催化剂薄膜沉积在氧化膜上，产生必要的温度梯度，进一步提高了传感器对目标气体的灵敏度。该传感器在相对较低的温度(120℃)下对目标碳氢化合物浓度的ppm变化具有较高的灵敏度。
{"title":"Development of Thermoelectric Gas Sensors for Volatile Organic Compounds","authors":"S. Anuradha, K. Rajanna","doi":"10.1109/ICSENS.2007.355561","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355561","url":null,"abstract":"This paper describes the design and development of a thermoelectric gas sensor suitable for the detection of volatile organic compounds (VOCs). In order to enhance the seebeck coefficient of the sensor, we have deposited chromium metal films on a limited area of the glass substrate. Tin oxide thin film was deposited on top of these metal films. The resulting metal/semiconductor film exhibits a high seebeck coefficient of 400 muV/degC. Platinum catalyst film deposited on the oxide film to create the necessary temperature gradient resulted in further enhancement in the sensitivity of the sensor to target gases. The sensor shows high sensitivity to ppm-change in the concentration of target hydrocarbons at a relatively low temperature of 120degC.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117147526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355728
Chen-Chen Lin, Angela Y. Chen, N. Ho, Chie-Wei Wu, Che-Hsin Lin
This paper proposes a novel microfluidic system for cell/microparticle recognition, counting, and sorting utilizing a computer controlled digital image processing technique (DIP) and optical tweezers under microfluidic configuration. Cell samples are firstly sorted using an electrokinetic focus apparatus and flow through a region of interesting (ROI) for digital images inspection. Home-built digital image processing (DIP) system is used to real-time recognize, count and trace the cell/particle samples in the microfluidic channel. Synchronized control signals generated by the DIP system turn on a focused IR laser beam to switch the flow direction of the traced target cells and pull out the target cells out of the sample flow stream. Experimental result shows the proposed system can sort cell/particle with the rate of up to 200 cell/min. The proposed system provides a simple, low-cost but high-performance solution for cell manipulation in a microfluidic device.
{"title":"Microfluidic Cell Counter/Sorter Utilizing Laser Tweezers and Multiple Particle Tracing Technique","authors":"Chen-Chen Lin, Angela Y. Chen, N. Ho, Chie-Wei Wu, Che-Hsin Lin","doi":"10.1109/ICSENS.2007.355728","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355728","url":null,"abstract":"This paper proposes a novel microfluidic system for cell/microparticle recognition, counting, and sorting utilizing a computer controlled digital image processing technique (DIP) and optical tweezers under microfluidic configuration. Cell samples are firstly sorted using an electrokinetic focus apparatus and flow through a region of interesting (ROI) for digital images inspection. Home-built digital image processing (DIP) system is used to real-time recognize, count and trace the cell/particle samples in the microfluidic channel. Synchronized control signals generated by the DIP system turn on a focused IR laser beam to switch the flow direction of the traced target cells and pull out the target cells out of the sample flow stream. Experimental result shows the proposed system can sort cell/particle with the rate of up to 200 cell/min. The proposed system provides a simple, low-cost but high-performance solution for cell manipulation in a microfluidic device.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121795188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355597
J. Rossiter, T. Mukai
We present an optical-based tactile sensor that utilizes light emitting diodes (LEDs) in combination with a semi-opaque compliant medium. Previously we have presented this technology in application to sensing either force or a combination of point force and position. In this paper we now consider the application of this sensor to the sensing of object size. We propose a modification that enables sensing of the size on an incident object whilst retaining the previous sensing abilities. This is achieved by introducing a second deformable layer that may optionally have different compressive and/or optically transmission properties. We present results of sensing the size of different objects using this modified sensor and consider the simultaneous measurement of force, size and position. This triple-sensing action, along with the soft nature of the sensor medium, is especially important in applications where the sensing elements may be widely dispersed, for example in safe and compliant robot skin covering.
{"title":"An LED-based Tactile Sensor for Multi-sensing over Large Areas","authors":"J. Rossiter, T. Mukai","doi":"10.1109/ICSENS.2007.355597","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355597","url":null,"abstract":"We present an optical-based tactile sensor that utilizes light emitting diodes (LEDs) in combination with a semi-opaque compliant medium. Previously we have presented this technology in application to sensing either force or a combination of point force and position. In this paper we now consider the application of this sensor to the sensing of object size. We propose a modification that enables sensing of the size on an incident object whilst retaining the previous sensing abilities. This is achieved by introducing a second deformable layer that may optionally have different compressive and/or optically transmission properties. We present results of sensing the size of different objects using this modified sensor and consider the simultaneous measurement of force, size and position. This triple-sensing action, along with the soft nature of the sensor medium, is especially important in applications where the sensing elements may be widely dispersed, for example in safe and compliant robot skin covering.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124107310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355779
W. Teppan
A novel concept to measure magnetic flux densities up to more than one hundred milliteslas is presented. It offers constant and stable sensitivity as well as low offset over a wide temperature range together with a short response time of some microseconds. The magnetic induction sensor consists of a tiny fluxgate (1.7 times 1.1 times 0.9 mm3) which is mounted in a precision magnetic shield having a constant shielding effect. This assembly is connected to an electronic circuit providing excitation of the fluxgate and a feedback current for local flux density compensation.
{"title":"Shielded Fluxgates for Open-Loop Current Transducers; Measuring High Flux Densities Fast","authors":"W. Teppan","doi":"10.1109/ICSENS.2007.355779","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355779","url":null,"abstract":"A novel concept to measure magnetic flux densities up to more than one hundred milliteslas is presented. It offers constant and stable sensitivity as well as low offset over a wide temperature range together with a short response time of some microseconds. The magnetic induction sensor consists of a tiny fluxgate (1.7 times 1.1 times 0.9 mm3) which is mounted in a precision magnetic shield having a constant shielding effect. This assembly is connected to an electronic circuit providing excitation of the fluxgate and a feedback current for local flux density compensation.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126326268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355806
R. Gao, Zhaoyan Fan, D. Kazmer
This paper presents a new sensing method for the simultaneous measurement of temperature and pressure within an injection mold cavity for molding process monitoring. A temperature-dependent oscillator (TSO) was designed to convert changes in the polymer melt temperature into carrier frequency shifts of the TSO by means of a temperature-sensitive capacitor. The frequency shifts are then utilized to modulate ultrasonic pulses generated by an ultrasonic transmitter. The ultrasonic transmitter is powered by energy extracted from the melt pressure by means of a piezoceramic stack. The transmitter and the TSO were represented by an equivalent circuit, and its Mason's model was analyzed to assist in the parametric design and function simulation of the transmitter. Results of simulation were experimentally verified and a good agreement was found.
{"title":"Design of an Acoustic Transmitter for Temperature-Pressure Dual Sensing in Injection Molding","authors":"R. Gao, Zhaoyan Fan, D. Kazmer","doi":"10.1109/ICSENS.2007.355806","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355806","url":null,"abstract":"This paper presents a new sensing method for the simultaneous measurement of temperature and pressure within an injection mold cavity for molding process monitoring. A temperature-dependent oscillator (TSO) was designed to convert changes in the polymer melt temperature into carrier frequency shifts of the TSO by means of a temperature-sensitive capacitor. The frequency shifts are then utilized to modulate ultrasonic pulses generated by an ultrasonic transmitter. The ultrasonic transmitter is powered by energy extracted from the melt pressure by means of a piezoceramic stack. The transmitter and the TSO were represented by an equivalent circuit, and its Mason's model was analyzed to assist in the parametric design and function simulation of the transmitter. Results of simulation were experimentally verified and a good agreement was found.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129982719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355480
M. Hashimoto, N. Sakamoto, S. Upadhyay, H. Suzuki
The behavior of electrodes with a highly concentrated enzyme-immobilized layer was examined. The enzyme-immobilized layer was formed by placing a droplet of an enzyme solution on the working electrode surrounded by a super-hydrophobic layer and shrinking it by evaporation. A significant increase in the output current was observed compared electrodes fabricated by a conventional method. The current density increased by decreasing the electrode size and increasing enzyme loading. The sensor fabricated by this method was incorporated in a micro-flow channel. With smaller electrodes, the current density and the conversion efficiency increased and the flow dependence became weaker. The sensitivity and the conversion efficiency could also be improved by placing two same electrodes in the flow channel.
{"title":"Behavior of a Microelectrode with a Concentrated Enzyme-Immobilized Layer","authors":"M. Hashimoto, N. Sakamoto, S. Upadhyay, H. Suzuki","doi":"10.1109/ICSENS.2007.355480","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355480","url":null,"abstract":"The behavior of electrodes with a highly concentrated enzyme-immobilized layer was examined. The enzyme-immobilized layer was formed by placing a droplet of an enzyme solution on the working electrode surrounded by a super-hydrophobic layer and shrinking it by evaporation. A significant increase in the output current was observed compared electrodes fabricated by a conventional method. The current density increased by decreasing the electrode size and increasing enzyme loading. The sensor fabricated by this method was incorporated in a micro-flow channel. With smaller electrodes, the current density and the conversion efficiency increased and the flow dependence became weaker. The sensitivity and the conversion efficiency could also be improved by placing two same electrodes in the flow channel.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129719538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355859
K. Jeon, H. J. Son, C. E. Kim, M. Shon, K. Yoo, A.M. Choi, H.I. Jung, Sang Yeol Lee
ZnO nanowires (NWs) were fabricated on p-Si (100) substrates by simple physical vapor deposition in vacuum furnace. Scanning electron microscopy (SEM) images indicate that the diameters of ZnO NWs were from 20 to 50 nm and the average length was longer than 2 mum. Room-temperature photoluminescence spectra of the NWs show the near band-edge emissions and the deep-level green light emissions. Such result indicates that the nanowires have good structural quality. We have fabricated electrical biosensors based on ZnO NW field effect transistors and report the chemical sensitivity of ZnO NWs. The ZnO nanosensor functionalized with biotin can easily detect streptavidin binding. The ZnO NWs for sensitive, label-free, real time detection of a wide range of biological species could be exploited in vivo diagnostics.
{"title":"Biosensor with Oxide Nanowires","authors":"K. Jeon, H. J. Son, C. E. Kim, M. Shon, K. Yoo, A.M. Choi, H.I. Jung, Sang Yeol Lee","doi":"10.1109/ICSENS.2007.355859","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355859","url":null,"abstract":"ZnO nanowires (NWs) were fabricated on p-Si (100) substrates by simple physical vapor deposition in vacuum furnace. Scanning electron microscopy (SEM) images indicate that the diameters of ZnO NWs were from 20 to 50 nm and the average length was longer than 2 mum. Room-temperature photoluminescence spectra of the NWs show the near band-edge emissions and the deep-level green light emissions. Such result indicates that the nanowires have good structural quality. We have fabricated electrical biosensors based on ZnO NW field effect transistors and report the chemical sensitivity of ZnO NWs. The ZnO nanosensor functionalized with biotin can easily detect streptavidin binding. The ZnO NWs for sensitive, label-free, real time detection of a wide range of biological species could be exploited in vivo diagnostics.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129722697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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