Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355773
A. Nemecek, K. Oberhauser, G. Zach, H. Zimmermann
A 32 pixel line sensor is presented for range finding applications of non-cooperative targets based on the time-of-flight (TOF) principle of modulated light. The sensor is realized as an optoelectronic integrated circuit (OEIC) containing the PIN photodiode with a high bandwidth of >1 GHz together with a high responsivity of 0.45 A/W at 660 nm and a novel, quasi differential correlating active integrator circuit in each pixel. Distance information is gained in every pixel, integrating the weak received signal correlated with the transmitted modulation signal. The single pixel achieves a minimum standard deviation of 8.5 mm in a measurement range of 1.5 m - 3.2 m with an optical transmission power of 1.5 mW and a plain white paper target. Exemplarily a scanned 3D depth image of the university logo demonstrates the potential of the sensor. Single pixel size is 210 mum times 105 mum with an optical fill factor of 45%. The sensor chip was fabricated in a 0.6 mum BiCMOS process including PIN-technology.
基于调制光的飞行时间(TOF)原理，提出了一种用于非合作目标测距的32像素线传感器。该传感器由一个光电集成电路(OEIC)实现，该光电集成电路包含一个带宽> 1ghz的PIN光电二极管，在660 nm处具有0.45 a /W的高响应性，每个像素都有一个新颖的准微分相关有源积分器电路。将接收到的微弱信号与发射调制信号相结合，得到每个像素的距离信息。在1.5 m ~ 3.2 m的测量范围内，单像元的最小标准偏差为8.5 mm，光传输功率为1.5 mW，目标为普通白纸。举例来说，大学标志的三维深度扫描图像展示了传感器的潜力。单像素大小为210 mum × 105 mum，光学填充系数为45%。该传感器芯片采用了0.6 μ m的BiCMOS工艺，其中包括pin技术。
{"title":"Distance Measurement Line Sensor with PIN Photodiodes","authors":"A. Nemecek, K. Oberhauser, G. Zach, H. Zimmermann","doi":"10.1109/ICSENS.2007.355773","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355773","url":null,"abstract":"A 32 pixel line sensor is presented for range finding applications of non-cooperative targets based on the time-of-flight (TOF) principle of modulated light. The sensor is realized as an optoelectronic integrated circuit (OEIC) containing the PIN photodiode with a high bandwidth of >1 GHz together with a high responsivity of 0.45 A/W at 660 nm and a novel, quasi differential correlating active integrator circuit in each pixel. Distance information is gained in every pixel, integrating the weak received signal correlated with the transmitted modulation signal. The single pixel achieves a minimum standard deviation of 8.5 mm in a measurement range of 1.5 m - 3.2 m with an optical transmission power of 1.5 mW and a plain white paper target. Exemplarily a scanned 3D depth image of the university logo demonstrates the potential of the sensor. Single pixel size is 210 mum times 105 mum with an optical fill factor of 45%. The sensor chip was fabricated in a 0.6 mum BiCMOS process including PIN-technology.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133408216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355823
T. Matsuo, Jinxing Liang, J. Pawłat, T. Ueda
Diode-bridge type capacitance detection circuit was developed in order to detect very small variation of differential capacitances in higher resolution. The circuit was designed for a comb structure tilt sensor, which was made of quartz crystal and had several movable electrodes between fixed electrodes. The circuit's output was almost proportional to the displacement of the movable electrode. Over 100 kHz AC voltage was supplied to obtain output signal sufficiently. In order to prevent decrease of the sensitivity, the diode-bridge part was composed of commercial PIN diodes, which had very low junction capacitance (less than 1 pF), and was mounted in small ceramic package with the tilt sensor. At present, the resolution of 0.0015 degree was obtained using the combination of the sensor and the detection circuit. It corresponded to the resolution of about less than 4.5 aF.
{"title":"Study on a Diode-bridge Type Capacitance Detection Circuit for Differential Capacitive Sensor","authors":"T. Matsuo, Jinxing Liang, J. Pawłat, T. Ueda","doi":"10.1109/ICSENS.2007.355823","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355823","url":null,"abstract":"Diode-bridge type capacitance detection circuit was developed in order to detect very small variation of differential capacitances in higher resolution. The circuit was designed for a comb structure tilt sensor, which was made of quartz crystal and had several movable electrodes between fixed electrodes. The circuit's output was almost proportional to the displacement of the movable electrode. Over 100 kHz AC voltage was supplied to obtain output signal sufficiently. In order to prevent decrease of the sensitivity, the diode-bridge part was composed of commercial PIN diodes, which had very low junction capacitance (less than 1 pF), and was mounted in small ceramic package with the tilt sensor. At present, the resolution of 0.0015 degree was obtained using the combination of the sensor and the detection circuit. It corresponded to the resolution of about less than 4.5 aF.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133729468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355781
R. Chen, C. Chu, Chia-Yen Lee, Hao-Jen Chen, W. Cheng
This paper presents a novel humidity sensing mechanism. A simple sandwiched cantilever fabricated by traditional MEMS (microelectromechanic systems) process is proposed in this study. During the operation of humidity sensing, the polyimide-sensing layer, top layer of the sandwiched micro-cantilever, swells and the induced compressive stress pushes the tip of cantilever to deflect downward. To systematically investigate the performance of humidity sensor, three items were conducted in this study including response curve, time response, and hysteresis. The simple sensing mechanism had been verified and yielded a high average response time of 0.7 second during humidity range from 65%RH to 95%RH.
{"title":"A Novel Simple Humidity Sensor Constructed by Sandwiched Cantilever","authors":"R. Chen, C. Chu, Chia-Yen Lee, Hao-Jen Chen, W. Cheng","doi":"10.1109/ICSENS.2007.355781","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355781","url":null,"abstract":"This paper presents a novel humidity sensing mechanism. A simple sandwiched cantilever fabricated by traditional MEMS (microelectromechanic systems) process is proposed in this study. During the operation of humidity sensing, the polyimide-sensing layer, top layer of the sandwiched micro-cantilever, swells and the induced compressive stress pushes the tip of cantilever to deflect downward. To systematically investigate the performance of humidity sensor, three items were conducted in this study including response curve, time response, and hysteresis. The simple sensing mechanism had been verified and yielded a high average response time of 0.7 second during humidity range from 65%RH to 95%RH.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122179371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355903
F. Keplinger, J. Kuntner, A. Jachimowicz, F. Kohl, B. Jakoby
Miniaturized sensors for flow velocity and flow direction measurement based on thin-film germanium thermistors (TCR = -1.8%/K) offering extremely high sensitivity were developed. The thermistors are placed on a silicon nitride diaphragm (1.3 mum thick) which is carried by a silicon frame. To resolve the direction of the flow, eight thermistors are arranged circularly on the diaphragm. Two orthogonal pairs of diametrically opposed thermistors (e.g., N-S and E-W) feature a directional sensitivity of 152 muV/deg at a flow velocity of 1 m/s. An increase of the sensitivity of about 50% can be gained by analyzing the difference signal of two 90deg rotated thermistors (e.g., N-E), which are in the downstream position. The measurable gas flow rate ranges from 0.025 m/s to about 3 m/s for the constant power mode. The sensor has a high sensitivity to flow direction of 30 mVs/m at low flow rates from 0.025 m/s to 0.2 m/s.
{"title":"Highly Sensitive Sensor for Flow Velocity and Flow Direction Measurement","authors":"F. Keplinger, J. Kuntner, A. Jachimowicz, F. Kohl, B. Jakoby","doi":"10.1109/ICSENS.2007.355903","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355903","url":null,"abstract":"Miniaturized sensors for flow velocity and flow direction measurement based on thin-film germanium thermistors (TCR = -1.8%/K) offering extremely high sensitivity were developed. The thermistors are placed on a silicon nitride diaphragm (1.3 mum thick) which is carried by a silicon frame. To resolve the direction of the flow, eight thermistors are arranged circularly on the diaphragm. Two orthogonal pairs of diametrically opposed thermistors (e.g., N-S and E-W) feature a directional sensitivity of 152 muV/deg at a flow velocity of 1 m/s. An increase of the sensitivity of about 50% can be gained by analyzing the difference signal of two 90deg rotated thermistors (e.g., N-E), which are in the downstream position. The measurable gas flow rate ranges from 0.025 m/s to about 3 m/s for the constant power mode. The sensor has a high sensitivity to flow direction of 30 mVs/m at low flow rates from 0.025 m/s to 0.2 m/s.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134488154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355821
Young-Tae Lee, K. Ahn, Yong-Taek Kwon, H. Takao, M. Ishida
In this paper, we fabricated drag force type gas flow sensor with dry etching technology which used deep RIE (reactive ion etching) and etching stop technology which used SOI (silicon-on-insulator). we fabricated two kinds of sensor, which are cantilever type and paddle type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03 mV/VldrkPa.
{"title":"Piezoresistive Gas Flow Sensors by Deep RIE Technology","authors":"Young-Tae Lee, K. Ahn, Yong-Taek Kwon, H. Takao, M. Ishida","doi":"10.1109/ICSENS.2007.355821","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355821","url":null,"abstract":"In this paper, we fabricated drag force type gas flow sensor with dry etching technology which used deep RIE (reactive ion etching) and etching stop technology which used SOI (silicon-on-insulator). we fabricated two kinds of sensor, which are cantilever type and paddle type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03 mV/VldrkPa.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131536600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355796
M. Malátek, P. Ripka
Enormous improvement of the temperature stability of simple giant magnetoimpedance (GMI) sensor has been reached by means of AC bias of the sensor. Despite of reduction of the frequency range of the sensor to less than 50 Hz, the 100 Hz-current flowing through the bias coil improves the temperature offset stability by the factor of 19; from 1053 nT/K to 54 nT/K (sinewave excitation current of 10 mARMS was used). The offset drift was furthermore reduced to less than 16 nT/K by increasing the amplitude of the excitation current to 24 mARMS.
{"title":"Single-core Giant Magnetoimpedance with AC Bias","authors":"M. Malátek, P. Ripka","doi":"10.1109/ICSENS.2007.355796","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355796","url":null,"abstract":"Enormous improvement of the temperature stability of simple giant magnetoimpedance (GMI) sensor has been reached by means of AC bias of the sensor. Despite of reduction of the frequency range of the sensor to less than 50 Hz, the 100 Hz-current flowing through the bias coil improves the temperature offset stability by the factor of 19; from 1053 nT/K to 54 nT/K (sinewave excitation current of 10 mARMS was used). The offset drift was furthermore reduced to less than 16 nT/K by increasing the amplitude of the excitation current to 24 mARMS.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131553649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355602
J. Hayes, A. Pacquit, K. Crowley, Kim Lau, D. Diamond
The work presented in this paper outlines a novel technique for remote food quality control over the Internet by using web based image processing. The colour change of a colorimetric sensor was captured with a wireless camera and the data was transmitted to a PC, which uploaded the information to the web. A software system for colour analysis was developed to process the data locally. Quantitative colour information which reflects the quality of the food product can be deduced remotely using this technique. This novel technique was applied to the monitoring of fish spoilage in packaged fish. The on-package sensors detected the release of spoilage products, typically the amines, from the fish and gave a visible colour change which was captured by the wireless camera. The colour information obtained through the web, when processed remotely using the in-house developed software, accurately reflected the state of the product. This technology reduces the labour requirements in food quality monitoring and can be applied to all colorimetric sensors.
{"title":"Web-based colorimetric sensing for food quality monitoring","authors":"J. Hayes, A. Pacquit, K. Crowley, Kim Lau, D. Diamond","doi":"10.1109/ICSENS.2007.355602","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355602","url":null,"abstract":"The work presented in this paper outlines a novel technique for remote food quality control over the Internet by using web based image processing. The colour change of a colorimetric sensor was captured with a wireless camera and the data was transmitted to a PC, which uploaded the information to the web. A software system for colour analysis was developed to process the data locally. Quantitative colour information which reflects the quality of the food product can be deduced remotely using this technique. This novel technique was applied to the monitoring of fish spoilage in packaged fish. The on-package sensors detected the release of spoilage products, typically the amines, from the fish and gave a visible colour change which was captured by the wireless camera. The colour information obtained through the web, when processed remotely using the in-house developed software, accurately reflected the state of the product. This technology reduces the labour requirements in food quality monitoring and can be applied to all colorimetric sensors.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133871607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355771
K. Aguir, A. Labidi, C. Lambert-Mauriata
Knowledge of the conduction mechanisms on gas sensors is necessary to improve the performances of the sensors. The impedance spectroscopy is a powerful method to understand the conduction processes in the metal-oxide gas sensors. The impedance evolution of WO3 sensors for different concentrations of reducing gas (ethanol) or oxidizing gas (ozone) is studied. The Nyquist responses show that the ozone mainly affects the grain boundaries, whereas ethanol mainly acts on the bulk conduction properties. A comparison between bare WO3 and palladium (Pd) or gold (Au) activated WO3 surface shows that Au improves the sensitivity to ethanol, whereas Pd inhibits the sensitivity to both ozone and ethanol. The impedance spectra show a modification of conduction in the grain boundaries, due to the presence of Au and Pd nanoclusters.
{"title":"Impedance spectroscopy to identify the conduction mechanisms in WO3 sensors","authors":"K. Aguir, A. Labidi, C. Lambert-Mauriata","doi":"10.1109/ICSENS.2007.355771","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355771","url":null,"abstract":"Knowledge of the conduction mechanisms on gas sensors is necessary to improve the performances of the sensors. The impedance spectroscopy is a powerful method to understand the conduction processes in the metal-oxide gas sensors. The impedance evolution of WO3 sensors for different concentrations of reducing gas (ethanol) or oxidizing gas (ozone) is studied. The Nyquist responses show that the ozone mainly affects the grain boundaries, whereas ethanol mainly acts on the bulk conduction properties. A comparison between bare WO3 and palladium (Pd) or gold (Au) activated WO3 surface shows that Au improves the sensitivity to ethanol, whereas Pd inhibits the sensitivity to both ozone and ethanol. The impedance spectra show a modification of conduction in the grain boundaries, due to the presence of Au and Pd nanoclusters.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133128130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355561
S. Anuradha, K. Rajanna
This paper describes the design and development of a thermoelectric gas sensor suitable for the detection of volatile organic compounds (VOCs). In order to enhance the seebeck coefficient of the sensor, we have deposited chromium metal films on a limited area of the glass substrate. Tin oxide thin film was deposited on top of these metal films. The resulting metal/semiconductor film exhibits a high seebeck coefficient of 400 muV/degC. Platinum catalyst film deposited on the oxide film to create the necessary temperature gradient resulted in further enhancement in the sensitivity of the sensor to target gases. The sensor shows high sensitivity to ppm-change in the concentration of target hydrocarbons at a relatively low temperature of 120degC.
本文介绍了一种适用于挥发性有机化合物(VOCs)检测的热电式气体传感器的设计与研制。为了提高传感器的塞贝克系数，我们在玻璃基板的有限区域上沉积了铬金属薄膜。在这些金属薄膜上沉积了氧化锡薄膜。所得的金属/半导体薄膜具有400 μ v /℃的高塞贝克系数。铂催化剂薄膜沉积在氧化膜上，产生必要的温度梯度，进一步提高了传感器对目标气体的灵敏度。该传感器在相对较低的温度(120℃)下对目标碳氢化合物浓度的ppm变化具有较高的灵敏度。
{"title":"Development of Thermoelectric Gas Sensors for Volatile Organic Compounds","authors":"S. Anuradha, K. Rajanna","doi":"10.1109/ICSENS.2007.355561","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355561","url":null,"abstract":"This paper describes the design and development of a thermoelectric gas sensor suitable for the detection of volatile organic compounds (VOCs). In order to enhance the seebeck coefficient of the sensor, we have deposited chromium metal films on a limited area of the glass substrate. Tin oxide thin film was deposited on top of these metal films. The resulting metal/semiconductor film exhibits a high seebeck coefficient of 400 muV/degC. Platinum catalyst film deposited on the oxide film to create the necessary temperature gradient resulted in further enhancement in the sensitivity of the sensor to target gases. The sensor shows high sensitivity to ppm-change in the concentration of target hydrocarbons at a relatively low temperature of 120degC.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117147526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-10-01DOI: 10.1109/ICSENS.2007.355850
G. Chung, Kan-San Kim
In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaining mirror like crystalline surface. The growth rate of 3C-SiC film in this work was 4.3 mum/h. The 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of grown 3C-SiC films have formation of single-crystal 3C-SiC, the films have a very good crystal quality without twins, defects and dislocations and very low residual stress.
{"title":"Heteroepitaxial Growth of 3C-SiC Thin Films on Si (100) Substrates by Single Source Chenical Vapor Deposition for MEMS Applications","authors":"G. Chung, Kan-San Kim","doi":"10.1109/ICSENS.2007.355850","DOIUrl":"https://doi.org/10.1109/ICSENS.2007.355850","url":null,"abstract":"In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaining mirror like crystalline surface. The growth rate of 3C-SiC film in this work was 4.3 mum/h. The 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of grown 3C-SiC films have formation of single-crystal 3C-SiC, the films have a very good crystal quality without twins, defects and dislocations and very low residual stress.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116480808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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