Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632779
M. Bataiev, L. Brillson
The cathodoluminescent spectroscopy (CLS) in order to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton irradiation, along with bulk heterojunctions of materials of field-effect transistor. For both cases, we have observed distinct changes in the spectral emission features due to decreased internal electric-field strength and new point defects within different layers of the device structure with the nanometer-scale depth resolution. These changes might be accounted for the degraded electrical characteristics. The degradation of Al-GaN/GaN high electron mobility transistors due to 1.8-MeV proton irradiation was measured at fluence up to 3·1014 cm-2. The devices have much higher mobility than AlGaN/GaN devices, but they possess high radiation tolerance, exhibiting little degradation at fluence up to 1011 cm-2. Decreased sheet carrier mobility due to the increased carrier scattering and the decreased sheet carrier density due to the carrier removal are primary damage mechanisms. The device degradation has been observed with the decrease in the maximum transconductance, the increase in the threshold voltage, and the decrease in the drain saturation current.
{"title":"Cathodoluminescent spectroscopy and electric properties of MODFETs of AlxGa1−xN/GaN at impact of proton irradiation 1.8 MeV","authors":"M. Bataiev, L. Brillson","doi":"10.1109/CRMICO.2010.5632779","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632779","url":null,"abstract":"The cathodoluminescent spectroscopy (CLS) in order to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton irradiation, along with bulk heterojunctions of materials of field-effect transistor. For both cases, we have observed distinct changes in the spectral emission features due to decreased internal electric-field strength and new point defects within different layers of the device structure with the nanometer-scale depth resolution. These changes might be accounted for the degraded electrical characteristics. The degradation of Al-GaN/GaN high electron mobility transistors due to 1.8-MeV proton irradiation was measured at fluence up to 3·1014 cm-2. The devices have much higher mobility than AlGaN/GaN devices, but they possess high radiation tolerance, exhibiting little degradation at fluence up to 1011 cm-2. Decreased sheet carrier mobility due to the increased carrier scattering and the decreased sheet carrier density due to the carrier removal are primary damage mechanisms. The device degradation has been observed with the decrease in the maximum transconductance, the increase in the threshold voltage, and the decrease in the drain saturation current.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116970953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632743
M. Demydenko, S. Protsenko
The optical, magneto-optical properties and structural phase state were researched in the film systems based on Cr, Fe.
研究了Cr、Fe薄膜体系的光学、磁光性能和结构相态。
{"title":"Research of optical, magneto-optical properties and structural phase state of films systems based on Cr and Fe","authors":"M. Demydenko, S. Protsenko","doi":"10.1109/CRMICO.2010.5632743","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632743","url":null,"abstract":"The optical, magneto-optical properties and structural phase state were researched in the film systems based on Cr, Fe.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"574 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117028612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Co-planar Ka-band monolithic amplifiers based on domestic GaAs mHEMT process","authors":"M. Cherkashin, K. Dmitrienko, A. Kokolov, I. Dobush, A. S. Salnikov, Y. Fedorov, F. I. Sheyerman, L. Babak","doi":"10.1109/CRMICO.2010.5632973","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632973","url":null,"abstract":"The design of Ka-band single- and two-stage monolithic coplanar amplifiers (CAs) based on the domestic 0.15 μm GaAs mHEMT technology is presented.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"878 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116164843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632525
S. Lazarouk, A. Leshok, D. Sasinovich, V. Borisenko, S. Shvedov
The alumina waveguide with a nanocomposite Al2O3/TiO2 core has been developed and fabricated. The refractory index of the nanocomposite was about 1.8. It allowed decreasing the optical losses in the multilayer waveguide up to 0.6 dB/cm.
{"title":"Multilayer waveguide based on nanocomposite Al2O3/TiO2","authors":"S. Lazarouk, A. Leshok, D. Sasinovich, V. Borisenko, S. Shvedov","doi":"10.1109/CRMICO.2010.5632525","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632525","url":null,"abstract":"The alumina waveguide with a nanocomposite Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> core has been developed and fabricated. The refractory index of the nanocomposite was about 1.8. It allowed decreasing the optical losses in the multilayer waveguide up to 0.6 dB/cm.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123228223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632569
V. Ivanov, S. Kudinov
The results of investigation and computer modeling of operation of the oscillator are described, the problems of determination of generalized regenerating characteristic of UHF-active oscillator on the basis of a bipolar transistor are shown. The generalized regenerating characteristic allows defining of decrement coefficient of a resonant circuit of active oscillator that depend on the modes of operation for direct and alternating currents.
{"title":"Investigation of regenerating properties of UHF active oscillator on basis of bipolar tranzistor","authors":"V. Ivanov, S. Kudinov","doi":"10.1109/CRMICO.2010.5632569","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632569","url":null,"abstract":"The results of investigation and computer modeling of operation of the oscillator are described, the problems of determination of generalized regenerating characteristic of UHF-active oscillator on the basis of a bipolar transistor are shown. The generalized regenerating characteristic allows defining of decrement coefficient of a resonant circuit of active oscillator that depend on the modes of operation for direct and alternating currents.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123633176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632792
Y. Kalinin, A. Starodubov
This work concerns the study of generators of broadband chaotic oscillations, whose work is based on new physical principles, namely the use of intense turbulent electron beams.
这项工作涉及宽带混沌振荡发生器的研究，其工作是基于新的物理原理，即使用强烈的湍流电子束。
{"title":"On the formation of turbulent electron beams for the generation of broadband chaotic oscillations","authors":"Y. Kalinin, A. Starodubov","doi":"10.1109/CRMICO.2010.5632792","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632792","url":null,"abstract":"This work concerns the study of generators of broadband chaotic oscillations, whose work is based on new physical principles, namely the use of intense turbulent electron beams.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123698778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5633007
V. Shashkin, A. Murel’
The effect of active layer homogeneous doping in a low-barrier metal-semiconductor contact with near-surface delta-doping on current and capacitance characteristics have been investigated. Difference in characteristics of diodes with Mott and Schottky contacts develops with increasing doping, which results in partial active layer depletion. For really important thickness of an active layer in microwave diodes this concentration can be estimated as 1015 cm-3. Exceeding of this doping level leads to increase of reverse current, decrease current nonlinearity and growth of contact capacitance. This results in reduced volt-watt sensitivity for a detector with low-barrier Schottky diodes comparing with Mott diodes.
{"title":"Comparative analysis of microwave low-barrier Mott and Schottky detector diodes","authors":"V. Shashkin, A. Murel’","doi":"10.1109/CRMICO.2010.5633007","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5633007","url":null,"abstract":"The effect of active layer homogeneous doping in a low-barrier metal-semiconductor contact with near-surface delta-doping on current and capacitance characteristics have been investigated. Difference in characteristics of diodes with Mott and Schottky contacts develops with increasing doping, which results in partial active layer depletion. For really important thickness of an active layer in microwave diodes this concentration can be estimated as 1015 cm-3. Exceeding of this doping level leads to increase of reverse current, decrease current nonlinearity and growth of contact capacitance. This results in reduced volt-watt sensitivity for a detector with low-barrier Schottky diodes comparing with Mott diodes.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123729339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632921
Y. Ivanov, S. Meshkov, V. Sinyakin, I. Fedorenko, N. V. Fedorkova, V. Shashurin
UHF low power rectifier is considered. Influence of nonlinear parts' VAC vs. rectifier parameters is investigated. Conversion efficiency increased 3...10 times by means of resonant tunneling diode using. Experimental verification of mathematical model is carried out.
{"title":"Investigation of UHF low power rectifier based on resonant tunneling diode","authors":"Y. Ivanov, S. Meshkov, V. Sinyakin, I. Fedorenko, N. V. Fedorkova, V. Shashurin","doi":"10.1109/CRMICO.2010.5632921","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632921","url":null,"abstract":"UHF low power rectifier is considered. Influence of nonlinear parts' VAC vs. rectifier parameters is investigated. Conversion efficiency increased 3...10 times by means of resonant tunneling diode using. Experimental verification of mathematical model is carried out.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121940961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632624
V. Ivanov, S. Yakovlev, G. A. Nikolaychuk, M. V. Demikhova
Results of operation of MSSW filters with nano-scale films of yttrium iron garnet are presented. The peculiarities of filter characteristics are discussed. Nanoscale films in MSSW filter are used for broadening of input signal dynamical range due to the realization of single domain state in YIG films even at low magnetic field 1E. The use of nanoscale YIG films in MSSW filters allows increasing of frequency selective characteristics of these devices in the decimeter microwave range. MSSW filters with films grown by the magnetron sputtering have low insert losses in comparison with films grown by LPE.
{"title":"Surface magnetostatic wave filters with magnetron sputtered nanoscale films of yttrium iron garnet","authors":"V. Ivanov, S. Yakovlev, G. A. Nikolaychuk, M. V. Demikhova","doi":"10.1109/CRMICO.2010.5632624","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632624","url":null,"abstract":"Results of operation of MSSW filters with nano-scale films of yttrium iron garnet are presented. The peculiarities of filter characteristics are discussed. Nanoscale films in MSSW filter are used for broadening of input signal dynamical range due to the realization of single domain state in YIG films even at low magnetic field 1E. The use of nanoscale YIG films in MSSW filters allows increasing of frequency selective characteristics of these devices in the decimeter microwave range. MSSW filters with films grown by the magnetron sputtering have low insert losses in comparison with films grown by LPE.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121975034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632990
E. Anichenko, E. Erofeev, S. Ishutkin, V. A. Kagadei, K. S. Nosaeva
Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is described in the work.
介绍了利用电子束光刻技术在异质结构GaAs/AlGaAs/InGaAs上制备0.15 μm t栅Ti/Mo/Cu的技术，该技术采用950PMMA/ LOR 5B/ 495PMMA三层掩模。
{"title":"Production of 150 NM T-gate on basis of Ti/Mo/Cu for p-HEMT","authors":"E. Anichenko, E. Erofeev, S. Ishutkin, V. A. Kagadei, K. S. Nosaeva","doi":"10.1109/CRMICO.2010.5632990","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632990","url":null,"abstract":"Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is described in the work.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"97 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120856697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：