Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632458
L. Ilnytskiy, I. I. Mykhal'chuk
The article concerns submission of antenna radiation field in a circular polarization basis. A block diagram of measuring system for the investigation of amplitude and polarization directional diagrams is presented.
本文讨论了在圆极化基础上的天线辐射场的提交。给出了测量振幅图和偏振方向图的测量系统框图。
{"title":"On the field of antenna radiation circular the polarization","authors":"L. Ilnytskiy, I. I. Mykhal'chuk","doi":"10.1109/CRMICO.2010.5632458","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632458","url":null,"abstract":"The article concerns submission of antenna radiation field in a circular polarization basis. A block diagram of measuring system for the investigation of amplitude and polarization directional diagrams is presented.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125759880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632956
A. Kostrov, V. Stempitsky
The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.
{"title":"Simulation memory cell based on tunnel magnetoresistance effect","authors":"A. Kostrov, V. Stempitsky","doi":"10.1109/CRMICO.2010.5632956","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632956","url":null,"abstract":"The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126018412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632570
O. Botsula, E. Prokhorov, D. Aidan, I. A. Aidan, E. N. Zabajzan
The oscillation efficiency of nitride diodes operating in limitation of accumulation of the space charge (LSA) in the wide taraherz frequency range has been investigated. The maximal frequencies correspond to the existing regions of negative differential conductivity (NDP) 600 GHz for InN 800 GHz for GaN and 1200 GHz for AlN are showed.
{"title":"Frequency dependences of NDC for nitride compound calculated by Monte-Carlo techniques","authors":"O. Botsula, E. Prokhorov, D. Aidan, I. A. Aidan, E. N. Zabajzan","doi":"10.1109/CRMICO.2010.5632570","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632570","url":null,"abstract":"The oscillation efficiency of nitride diodes operating in limitation of accumulation of the space charge (LSA) in the wide taraherz frequency range has been investigated. The maximal frequencies correspond to the existing regions of negative differential conductivity (NDP) 600 GHz for InN 800 GHz for GaN and 1200 GHz for AlN are showed.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124603829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632614
G. S. Vorobiyov, Y. Shulga, A. Ponomaryova
Analysis results of possible creation of low-voltage sources of terahertz wavelength range radiation on the basis of periodic metal-dielectric structures which may exceed the existing solid-state sources of the given wave range in output power.
{"title":"On possibility of application of periodic metal-dielectric structures in practical schemes of devices of terahertz wavelength range","authors":"G. S. Vorobiyov, Y. Shulga, A. Ponomaryova","doi":"10.1109/CRMICO.2010.5632614","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632614","url":null,"abstract":"Analysis results of possible creation of low-voltage sources of terahertz wavelength range radiation on the basis of periodic metal-dielectric structures which may exceed the existing solid-state sources of the given wave range in output power.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124640070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632664
D. N. Tsurcanu, P. P. Nistiriuk, A. Alexei, S. Andronic, S. I. Finciuk, P. V. Nistiriuk
The present paper concerns the application of semi-Markov processes to analyze the operation of NGN networks (Next Generation Network).
研究了半马尔可夫过程在下一代网络(NGN)运行分析中的应用。
{"title":"Some aspects of the analysis of functioning NGN network based on semi-Markov processes","authors":"D. N. Tsurcanu, P. P. Nistiriuk, A. Alexei, S. Andronic, S. I. Finciuk, P. V. Nistiriuk","doi":"10.1109/CRMICO.2010.5632664","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632664","url":null,"abstract":"The present paper concerns the application of semi-Markov processes to analyze the operation of NGN networks (Next Generation Network).","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129522383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632530
A. Krutov, A. Rebrov
In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.
{"title":"An experimental recovery of GaAs and GaN PHEMT linear equivalent circuits and noise models","authors":"A. Krutov, A. Rebrov","doi":"10.1109/CRMICO.2010.5632530","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632530","url":null,"abstract":"In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128237174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632702
I. Prudyus, V. Oborzhytskyy
The method of computation of electrical parameters of a directional coupler on the base of two coupled lines, which provides the required distribution of input signal from primary line between the outputs of the second line, is offered. With this objection in mind the additional reactances by means of which high level of isolation and input matching are achieved, are used.
{"title":"Method of computation of electrical parameters of transdirectional coupler","authors":"I. Prudyus, V. Oborzhytskyy","doi":"10.1109/CRMICO.2010.5632702","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632702","url":null,"abstract":"The method of computation of electrical parameters of a directional coupler on the base of two coupled lines, which provides the required distribution of input signal from primary line between the outputs of the second line, is offered. With this objection in mind the additional reactances by means of which high level of isolation and input matching are achieved, are used.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128981918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5632842
Y. Kalinin, A. Starodubov, L. N. Volkova, K. B. Zykov
This paper presents the results of experimental studies of the main modes of the generators of microwave chaotic oscillations with internal electronic and external feedback. We consider pulse and continuous modes. It is experimentally established that the considered generators of noise-like oscillations have ultra-wide band of generation. Statistical properties of generated signals have been illustrated. We present promising areas of application for considered ultrawideband microwave sources.
{"title":"The investigation of signals of chaotic microwave generators with internal electronic and external feedback","authors":"Y. Kalinin, A. Starodubov, L. N. Volkova, K. B. Zykov","doi":"10.1109/CRMICO.2010.5632842","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5632842","url":null,"abstract":"This paper presents the results of experimental studies of the main modes of the generators of microwave chaotic oscillations with internal electronic and external feedback. We consider pulse and continuous modes. It is experimentally established that the considered generators of noise-like oscillations have ultra-wide band of generation. Statistical properties of generated signals have been illustrated. We present promising areas of application for considered ultrawideband microwave sources.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130667199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5631197
V. M. Vladimirov, V. Konnov, V. Markov, V. N. Martynovskiy, N. Repin, V. N. Shepov
Controlled microwave module for sensing of semiconductors is developed. The results of its application for measurement of minority-carrier lifetime in silicon are presented.
研制了用于半导体传感的可控微波模块。给出了该方法在硅中少数载流子寿命测量中的应用结果。
{"title":"Microwave module for noncontact measurement of semiconductors","authors":"V. M. Vladimirov, V. Konnov, V. Markov, V. N. Martynovskiy, N. Repin, V. N. Shepov","doi":"10.1109/CRMICO.2010.5631197","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5631197","url":null,"abstract":"Controlled microwave module for sensing of semiconductors is developed. The results of its application for measurement of minority-carrier lifetime in silicon are presented.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130769833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/CRMICO.2010.5633009
B. G. Sverdlov, V. Chapursky
The problem of exclusion of ambiguity in range and frequency is actual for burst signals. Distribution of frequencies in multifrequency signals can be based on the theory of Galois fields of prime numbers. Present report is devoted to calculation and analysis of ambiguity functions of multifrequency bursts signals with Golomb and Costas distribution of frequencies.
{"title":"Multifrequency signals with golomb and costas frequency distribution","authors":"B. G. Sverdlov, V. Chapursky","doi":"10.1109/CRMICO.2010.5633009","DOIUrl":"https://doi.org/10.1109/CRMICO.2010.5633009","url":null,"abstract":"The problem of exclusion of ambiguity in range and frequency is actual for burst signals. Distribution of frequencies in multifrequency signals can be based on the theory of Galois fields of prime numbers. Present report is devoted to calculation and analysis of ambiguity functions of multifrequency bursts signals with Golomb and Costas distribution of frequencies.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132410815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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