This work resolves fundamental knowledge gaps in high-k dielectric engineering by establishing the first direct causal links between atomic-layer deposition (ALD) conditions, defect speciation, and electronic structure evolution in HfO2 thin films. Through an innovative multimodal methodology combining ion beam analysis (IBA), XPS, UPS, LEIPS, and spectroscopic defect analysis, we demonstrate temperature-controlled transformation of band alignment. At low temperatures, hydroxyl‑related species stabilize passivating dipoles that preserve favorable band alignment, while higher temperatures promote carbon incorporation and oxygen-related defects that degrade dielectric reliability. Crucially, we provide the first quantitative measurement of conduction band minimum (CBM) reduction and direct experimental evidence linking unoccupied state modifications to specific defect configurations via LEIPS-EPR correlation, addressing the correlation between specific defect configurations and unoccupied state modulation in ALD HfO2 and a major gap in understanding defect-driven electronic structure tuning.
These insights not only advance fundamental understanding of defect–electronic structure relationships in HfO2 but also offer practical guidelines for tailoring ALD processes in applications ranging from resistive memory to CMOS gate dielectrics.
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