Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379893
M. Al-Mansoori, F. Hasoon
In this paper, a high sensitivity dual-stage L-band erbium-doped fiber amplifier (L-EDFA) has been optimized using different performance parameters such as gain and noise figure for different erbium-doped fiber (EDF) ions concentration, EDF pump powers, input signal power pumping wavelengths, power and directions. It has shown that when the optimized parameters are used, the dual-stage L-EDFA provides better performance of gain and noise figure using short gain medium. The amplifier structure is able to achieve high gain of 50 dB with noise figure less than 4 dB using 7 m of EDF.
{"title":"Performance evaluation and optimization of dual-stage L-band EDFA utilizing short gain medium","authors":"M. Al-Mansoori, F. Hasoon","doi":"10.1109/ICP.2012.6379893","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379893","url":null,"abstract":"In this paper, a high sensitivity dual-stage L-band erbium-doped fiber amplifier (L-EDFA) has been optimized using different performance parameters such as gain and noise figure for different erbium-doped fiber (EDF) ions concentration, EDF pump powers, input signal power pumping wavelengths, power and directions. It has shown that when the optimized parameters are used, the dual-stage L-EDFA provides better performance of gain and noise figure using short gain medium. The amplifier structure is able to achieve high gain of 50 dB with noise figure less than 4 dB using 7 m of EDF.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129286668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379866
Shih-Hsiang Hsu, Chih-Yuan Tsou, Jung-Chen Hsu
This paper proposed a strain sensing system using two-stage optical low coherence Mach-Zehnder interferometry. A 1.3-μm wavelength distributed feedback laser for an optical ruler assisted stepper motor was implemented to achieve 19.3-nm resolved characterization. The interferogram calibrated by the stepper motor combined with optical ruler on a 3-meter long fiber then demonstrated a 2.78-nε high resolution strain sensing. It successfully demonstrated that a stable stepper motor can further improve the optical ruler encoder to establish a high sensitivity and high resolution interferometric strain sensor.
{"title":"Interferometric fiber strain sensor","authors":"Shih-Hsiang Hsu, Chih-Yuan Tsou, Jung-Chen Hsu","doi":"10.1109/ICP.2012.6379866","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379866","url":null,"abstract":"This paper proposed a strain sensing system using two-stage optical low coherence Mach-Zehnder interferometry. A 1.3-μm wavelength distributed feedback laser for an optical ruler assisted stepper motor was implemented to achieve 19.3-nm resolved characterization. The interferogram calibrated by the stepper motor combined with optical ruler on a 3-meter long fiber then demonstrated a 2.78-nε high resolution strain sensing. It successfully demonstrated that a stable stepper motor can further improve the optical ruler encoder to establish a high sensitivity and high resolution interferometric strain sensor.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127352799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379840
R. Q. Shaddad, A. .. Mohammad, A. Al-hetar, S. A. Al-Gailani
The optical fiber is well adapted to pass multiple wireless signals having different carrier frequencies by using radio over fiber (RoF) technique. However multiple wireless signals which have the same carrier frequency cannot propagate over a single optical fiber, such as MIMO signals feeding multiple antennas in the fiber wireless (FiWi) system. A novel optical single-sideband frequency translation (OSSB-FT) technique is proposed to solve this problem. In this paper, three wireless MIMO signals are designed to transport over a 20 km standard single mode fiber (SMF) using the OSSB-FT technique by one optical source. Each wireless MIMO signal is with a 2.44 GHz carrier frequency, 1 Gb/s data rate, and 16 quadrature amplitude modulation (QAM). The crosstalk between the wireless MIMO signals is excluded, since each wireless MIMO signal is carried on a specific optical wavelength.
{"title":"A novel optical single-sideband frequency translation technique for transmission of wireless MIMO signals over optical fiber","authors":"R. Q. Shaddad, A. .. Mohammad, A. Al-hetar, S. A. Al-Gailani","doi":"10.1109/ICP.2012.6379840","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379840","url":null,"abstract":"The optical fiber is well adapted to pass multiple wireless signals having different carrier frequencies by using radio over fiber (RoF) technique. However multiple wireless signals which have the same carrier frequency cannot propagate over a single optical fiber, such as MIMO signals feeding multiple antennas in the fiber wireless (FiWi) system. A novel optical single-sideband frequency translation (OSSB-FT) technique is proposed to solve this problem. In this paper, three wireless MIMO signals are designed to transport over a 20 km standard single mode fiber (SMF) using the OSSB-FT technique by one optical source. Each wireless MIMO signal is with a 2.44 GHz carrier frequency, 1 Gb/s data rate, and 16 quadrature amplitude modulation (QAM). The crosstalk between the wireless MIMO signals is excluded, since each wireless MIMO signal is carried on a specific optical wavelength.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131704787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379521
A. Mansoor, M. Othman, H. Rashid, Z. Yusoff
The paper presented the performance comparison of a linear BEFL with and without tunable bandpass filter (TBF). The comparisons are done in terms of number of Stokes, peak power flatness and tuning range. For the same pump power, the BEFL with a TBF produces 15 Stokes compared to 11 for that of without a TBF. Besides, peak power flatness was also improved for BEFL with a TBF. By tuning the center wavelength of the TBF, the BEFL operation can be tuned to any wavelength within 40nm range in comparison to only 5nm for the BEFL without a TBF as the laser operation is dictated by the self-lasing cavity mode.
{"title":"Performance comparisons of a linear BEFL with and without a tunable bandpass filter","authors":"A. Mansoor, M. Othman, H. Rashid, Z. Yusoff","doi":"10.1109/ICP.2012.6379521","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379521","url":null,"abstract":"The paper presented the performance comparison of a linear BEFL with and without tunable bandpass filter (TBF). The comparisons are done in terms of number of Stokes, peak power flatness and tuning range. For the same pump power, the BEFL with a TBF produces 15 Stokes compared to 11 for that of without a TBF. Besides, peak power flatness was also improved for BEFL with a TBF. By tuning the center wavelength of the TBF, the BEFL operation can be tuned to any wavelength within 40nm range in comparison to only 5nm for the BEFL without a TBF as the laser operation is dictated by the self-lasing cavity mode.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131025312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379863
T. Ishiyama, M. Higuchi, T. Obata, Y. Kamiura
The photoluminescence (PL) properties of crystalline Er-Si-O compound on silicon substrate prepared using a simple method through evaporation and thermal annealing have been investigated. Diffraction peaks corresponding to crystalline Er-Si-O were clearly detected in X-ray diffraction measurements. Er-related infrared luminescence was observed at around 1.52 μm at room temperature. This luminescence of the crystalline Er-Si-O compound on Si was due not to direct excitation of the 4f shell of Er3+, but to excitation of the host Si, i.e. indirect excitation. The observed luminescence was very intense compared with that of a sample prepared by a wet-chemical method using ErCl3. The Er-related PL spectra also showed several peaks at room temperature, which reflected the splitting patterns of ground manifolds (4I15/2) for the 4f11 shell of Er3+. Significant differences in peak wavelengths between the crystalline Er-Si-O compound on Si substrate and Er-doped Si on Si substrate (Si:Er:O/Si) grown by molecular beam epitaxy were observed in the PL spectra at 77 K. In addition, temperature quenching of Er-related infrared luminescence was greatly reduced in the crystalline Er-Si-O compound prepared using the simple method. Finally, a new electron spin resonance spectrum was detected for the crystalline Er-Si-O compound on silicon substrate, thought to be related to the presence of Er atoms in the compound.
研究了用蒸发和热退火法制备的Er-Si-O晶体化合物在硅衬底上的光致发光性能。在x射线衍射测量中清晰地检测到与Er-Si-O晶体相对应的衍射峰。在室温下，在1.52 μm附近观察到铒相关红外发光。晶体Er-Si-O化合物在Si上的发光不是由于Er3+的4f壳层的直接激发，而是由于宿主Si的激发，即间接激发。与用ErCl3湿法制备的样品相比，所观察到的发光非常强烈。与er相关的PL光谱在室温下也出现了几个峰，反映了Er3+的4f11壳层的地面流形(4I15/2)的分裂模式。在77 K的PL光谱中，观察到Si衬底上的Er-Si-O晶体化合物与通过分子束外延生长的Si衬底上掺Er的Si (Si:Er:O/Si)的峰值波长存在显著差异。此外，该方法制备的Er-Si-O晶体的er相关红外发光的温度猝灭也大大降低。最后，在硅衬底上检测到Er- si - o晶体化合物的电子自旋共振谱，认为这与化合物中Er原子的存在有关。
{"title":"Infrared luminescence of erbium-silicon-oxide crystalline compound on silicon","authors":"T. Ishiyama, M. Higuchi, T. Obata, Y. Kamiura","doi":"10.1109/ICP.2012.6379863","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379863","url":null,"abstract":"The photoluminescence (PL) properties of crystalline Er-Si-O compound on silicon substrate prepared using a simple method through evaporation and thermal annealing have been investigated. Diffraction peaks corresponding to crystalline Er-Si-O were clearly detected in X-ray diffraction measurements. Er-related infrared luminescence was observed at around 1.52 μm at room temperature. This luminescence of the crystalline Er-Si-O compound on Si was due not to direct excitation of the 4f shell of Er3+, but to excitation of the host Si, i.e. indirect excitation. The observed luminescence was very intense compared with that of a sample prepared by a wet-chemical method using ErCl3. The Er-related PL spectra also showed several peaks at room temperature, which reflected the splitting patterns of ground manifolds (4I15/2) for the 4f11 shell of Er3+. Significant differences in peak wavelengths between the crystalline Er-Si-O compound on Si substrate and Er-doped Si on Si substrate (Si:Er:O/Si) grown by molecular beam epitaxy were observed in the PL spectra at 77 K. In addition, temperature quenching of Er-related infrared luminescence was greatly reduced in the crystalline Er-Si-O compound prepared using the simple method. Finally, a new electron spin resonance spectrum was detected for the crystalline Er-Si-O compound on silicon substrate, thought to be related to the presence of Er atoms in the compound.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122491887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379838
L. Sharan, V. K. Chaubey
In this paper, we present a simulation based analysis of long haul 40 Gb/s Dense Wavelength Division Multiplexing (DWDM) system operating at 1.28 Tb/s with Duobinary Return-to-Zero (DRZ) modulation format. The 32 Channels DWDM system has been numerically compared for pre, post and symmetrical dispersion compensation schemes with 50 GHz channel separation to characterize this modulation format for 40 Gb/s data rate. The transmission link is designed first with perfect compensation and then with under-compensation. The performance has been evaluated using Q value as the major parameter, by varying the input power for different transmission distances with different dispersion compensation schemes. It is observed that even under four-wave mixing(FWM) degradation, DRZ based DWDM system shows acceptable performance beyond 1000 Km. This paper reports the superiority of DRZ format over the conventional NRZ /RZ schemes in both cases.
{"title":"Design and simulation of long-haul 32 × 40 Gb/s Duobinary DWDM link in the presence of non-linearity with under-compensated dispersion","authors":"L. Sharan, V. K. Chaubey","doi":"10.1109/ICP.2012.6379838","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379838","url":null,"abstract":"In this paper, we present a simulation based analysis of long haul 40 Gb/s Dense Wavelength Division Multiplexing (DWDM) system operating at 1.28 Tb/s with Duobinary Return-to-Zero (DRZ) modulation format. The 32 Channels DWDM system has been numerically compared for pre, post and symmetrical dispersion compensation schemes with 50 GHz channel separation to characterize this modulation format for 40 Gb/s data rate. The transmission link is designed first with perfect compensation and then with under-compensation. The performance has been evaluated using Q value as the major parameter, by varying the input power for different transmission distances with different dispersion compensation schemes. It is observed that even under four-wave mixing(FWM) degradation, DRZ based DWDM system shows acceptable performance beyond 1000 Km. This paper reports the superiority of DRZ format over the conventional NRZ /RZ schemes in both cases.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122320206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379874
N. Suhaimi, S. M. Rashid, N. F. H. M. Junit, N. I. Razaki, M. K. Abd-Rahman, M. Ferrari
SiO2-ZrO2 doped Er3+ glass ceramic waveguides are promising materials for photonic applications. However, higher doping of Er3+ ions would cause erbium ion clustering due to network structure of silica which has strong Si-O-Si covalent bonds thus reduced the luminescence emission intensity. Network structure of silica can be overcome by introducing ZrO2 as co-host material in silica glass matrix which helps Er3+ ions dispersed homogenously. Hence, avoiding the cluster formation of erbium in silica and consequently enhanced the luminescence spectra. In this paper, we present study on various molar ratio of SiO2-ZrO2 doped with 0.58 mol% Er3+ prepared via sol-gel technique. Increased percent molar ratio of zirconia shows narrow sharp peak of photoluminescence spectra at 568 nm wavelength with higher intensity. It is anticipated that the refractive index increased with higher zirconia content while the coating tends to form thinner film layers. The surface roughness and optical transmission of the samples are also presented.
{"title":"Effect of zirconia in Er3+-doped SiO2-ZrO2 for planar waveguide laser","authors":"N. Suhaimi, S. M. Rashid, N. F. H. M. Junit, N. I. Razaki, M. K. Abd-Rahman, M. Ferrari","doi":"10.1109/ICP.2012.6379874","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379874","url":null,"abstract":"SiO2-ZrO2 doped Er3+ glass ceramic waveguides are promising materials for photonic applications. However, higher doping of Er3+ ions would cause erbium ion clustering due to network structure of silica which has strong Si-O-Si covalent bonds thus reduced the luminescence emission intensity. Network structure of silica can be overcome by introducing ZrO2 as co-host material in silica glass matrix which helps Er3+ ions dispersed homogenously. Hence, avoiding the cluster formation of erbium in silica and consequently enhanced the luminescence spectra. In this paper, we present study on various molar ratio of SiO2-ZrO2 doped with 0.58 mol% Er3+ prepared via sol-gel technique. Increased percent molar ratio of zirconia shows narrow sharp peak of photoluminescence spectra at 568 nm wavelength with higher intensity. It is anticipated that the refractive index increased with higher zirconia content while the coating tends to form thinner film layers. The surface roughness and optical transmission of the samples are also presented.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115311027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379881
N. A. Shaharuddin, S. M. Idrus, S. Isaak
Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1550nm for an up-conversion frequency of 30GHz. This transistor was simulated by using the Apsys Crosslight software. Its characteristics was further investigated to develop the appropriate structure device for OEM application. The data such as frequency up conversion, gain and bandwidth of the HBT OEM will be presented. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.
{"title":"Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer","authors":"N. A. Shaharuddin, S. M. Idrus, S. Isaak","doi":"10.1109/ICP.2012.6379881","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379881","url":null,"abstract":"Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1550nm for an up-conversion frequency of 30GHz. This transistor was simulated by using the Apsys Crosslight software. Its characteristics was further investigated to develop the appropriate structure device for OEM application. The data such as frequency up conversion, gain and bandwidth of the HBT OEM will be presented. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116232595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379526
D. Hudson, S. Jackson, B. Eggleton
Recent experiments involving long-wavelength fiber lasers and nonlinear media are presented. An optical fiber taper made from Chalcogenide glass that produced an octave-spanning spectrum (1-2 μm) at ultralow pump pulse energy (77 pJ) is presented. To translate these tapered fiber devices to the mid-Infrared range, we have explored several novel fiber laser configurations. Here, we recent work using a Holmium-doped fluoride fiber laser operating at 2.86 μm. A GaAs-based SESAM allows for passive mode-locking with 20 ps pulse durations. This system and its applications for nonlinear optics in the mid-infrared wavelength range are covered.
{"title":"Novel laser sources in the mid-Infrared","authors":"D. Hudson, S. Jackson, B. Eggleton","doi":"10.1109/ICP.2012.6379526","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379526","url":null,"abstract":"Recent experiments involving long-wavelength fiber lasers and nonlinear media are presented. An optical fiber taper made from Chalcogenide glass that produced an octave-spanning spectrum (1-2 μm) at ultralow pump pulse energy (77 pJ) is presented. To translate these tapered fiber devices to the mid-Infrared range, we have explored several novel fiber laser configurations. Here, we recent work using a Holmium-doped fluoride fiber laser operating at 2.86 μm. A GaAs-based SESAM allows for passive mode-locking with 20 ps pulse durations. This system and its applications for nonlinear optics in the mid-infrared wavelength range are covered.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131012562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-13DOI: 10.1109/ICP.2012.6379849
T. F. Al-Mashhadani, M. Al-Mansoori, M. Z. Jamaludin, F. Abdullah, A. Abass
We experimentally investigates the effect of uni-directional and bi-directional cavity structure on the performance of the Brillouin fiber laser for the first and the second Stokes signals. The laser cavities; unidirectional and bidirectional are tested under the same experimental conditions using different SMF lengths. We observed that in both cavities, the first Stokes threshold was almost same in values within all the selected fiber spools due to the Brillouin amplification effect. In addition, in a bidirectional cavity, the second Stokes signal threshold exhibits low threshold values within the SMF range as compared to its values in unidirectional cavity at which no Brillouin amplification effect is occurred. Moreover, the maximum power of the first and the second Stokes signals are tested using different SMF length for both cavities. An additional gain of 3.88-1.09 dB is observed at the SMF range for the first Stokes power in unidirectional cavity as compared to its values in bidirectional cavity; while, an additional gain (2.37-0.49) dB is observed at the same SMF range for the second Stokes power in bidirectional cavity.
{"title":"Effect of uni-directional and bi-directional cavity structure on the performance of Brillouin fiber laser","authors":"T. F. Al-Mashhadani, M. Al-Mansoori, M. Z. Jamaludin, F. Abdullah, A. Abass","doi":"10.1109/ICP.2012.6379849","DOIUrl":"https://doi.org/10.1109/ICP.2012.6379849","url":null,"abstract":"We experimentally investigates the effect of uni-directional and bi-directional cavity structure on the performance of the Brillouin fiber laser for the first and the second Stokes signals. The laser cavities; unidirectional and bidirectional are tested under the same experimental conditions using different SMF lengths. We observed that in both cavities, the first Stokes threshold was almost same in values within all the selected fiber spools due to the Brillouin amplification effect. In addition, in a bidirectional cavity, the second Stokes signal threshold exhibits low threshold values within the SMF range as compared to its values in unidirectional cavity at which no Brillouin amplification effect is occurred. Moreover, the maximum power of the first and the second Stokes signals are tested using different SMF length for both cavities. An additional gain of 3.88-1.09 dB is observed at the SMF range for the first Stokes power in unidirectional cavity as compared to its values in bidirectional cavity; while, an additional gain (2.37-0.49) dB is observed at the same SMF range for the second Stokes power in bidirectional cavity.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131960949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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