Schottky graphite / p-InP diodes were first fabricated by transferring the drawn graphite film to an InP substrate with a hole-type conductivity. As a result of research, the main mechanisms of current transfer through Schottky diodes graphite / p-InP were determined: these are multistage tunneling-recombination processes involving surface states at the graphite / p-InP interface and tunneling, which is described by Newman's formula at direct displacement; tunneling with reverse displacement. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient k ≈ 102 (at V = 1 V). It is shown that the created graphite / p-InP Schottky diodes have a potential barrier height of 0.71 eV
肖特基石墨/ p-InP二极管首先通过将拉伸的石墨薄膜转移到具有空穴型导电性的InP衬底上制成。研究结果确定了石墨/ p-InP肖特基二极管电流传递的主要机制:石墨/ p-InP界面处涉及表面态的多阶段隧穿-复合过程和直接位移处的隧穿，用Newman公式描述;反位移掘进。所研究的异质结具有明显的二极管特性，整流系数k≈102(在V = 1 V时)。结果表明，所制备的石墨/ p-InP肖特基二极管的势垒高度为0.71 eV
{"title":"Fabrication and investigation of graphite/p-InP Schottky-type heterojunction","authors":"S. Kuryshchuk, M. Solovan, A. Mostovyi","doi":"10.1117/12.2615780","DOIUrl":"https://doi.org/10.1117/12.2615780","url":null,"abstract":"Schottky graphite / p-InP diodes were first fabricated by transferring the drawn graphite film to an InP substrate with a hole-type conductivity. As a result of research, the main mechanisms of current transfer through Schottky diodes graphite / p-InP were determined: these are multistage tunneling-recombination processes involving surface states at the graphite / p-InP interface and tunneling, which is described by Newman's formula at direct displacement; tunneling with reverse displacement. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient k ≈ 102 (at V = 1 V). It is shown that the created graphite / p-InP Schottky diodes have a potential barrier height of 0.71 eV","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115956372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Gnatyuk, S. Levytskyi, O. Maslyanchuk, O. Kulyk, T. Aoki
The electrical and spectroscopic properties of the CdTe-based p-n junction-diode X/γ-ray detectors have been studied by the measurements of I-V characteristics and emission spectra of 137Cs, 57Co, and 241Am radioisotopes. The In/CdTe/Au diodes were fabricated by the frontside laser irradiation doping technique. Detector-grade p-like CdTe(111) crystals, pre-coated with an In dopant (electrode) film, were irradiated with nanosecond KrF laser pulses in distilled water. Laser stimulated solid-phase doping was attributed to generation and propagation of stress and shock waves, barodiffusion of In dopant atoms into the thin CdTe surface region and thus, creation of high concentration donors. The second contact (quasi-ohmic) was formed on the opposite (Cd-terminated) crystal side by vacuum evaporation of Au. In addition, some diodes were created on CdTe crystals, which were preliminary annealed in vacuum prior to deposition of metal films. The I-V characteristics of the In/CdTe/Au p-n junction diodes evidenced that the reverse dark current in the initial part was described by the Sah-Noyce-Shockley theory. Creation of the favorable conditions for efficient collection of photogenerated charge carriers, decrease in the reverse dark current in the In/CdTe/Au detectors ensured obtaining the high-energy resolution spectra. Based on the electric field dependence of the 137Cs isotope spectrum, it was established that the applied bias V = 800 V was the optimal for the diodes formed on preliminary annealed CdTe crystals which ensured the energy resolution FWHM = 0.62 % at the 662 keV line
{"title":"Performance of CdTe-based p-n junction-diode X/γ-ray detectors","authors":"V. Gnatyuk, S. Levytskyi, O. Maslyanchuk, O. Kulyk, T. Aoki","doi":"10.1117/12.2615569","DOIUrl":"https://doi.org/10.1117/12.2615569","url":null,"abstract":"The electrical and spectroscopic properties of the CdTe-based p-n junction-diode X/γ-ray detectors have been studied by the measurements of I-V characteristics and emission spectra of 137Cs, 57Co, and 241Am radioisotopes. The In/CdTe/Au diodes were fabricated by the frontside laser irradiation doping technique. Detector-grade p-like CdTe(111) crystals, pre-coated with an In dopant (electrode) film, were irradiated with nanosecond KrF laser pulses in distilled water. Laser stimulated solid-phase doping was attributed to generation and propagation of stress and shock waves, barodiffusion of In dopant atoms into the thin CdTe surface region and thus, creation of high concentration donors. The second contact (quasi-ohmic) was formed on the opposite (Cd-terminated) crystal side by vacuum evaporation of Au. In addition, some diodes were created on CdTe crystals, which were preliminary annealed in vacuum prior to deposition of metal films. The I-V characteristics of the In/CdTe/Au p-n junction diodes evidenced that the reverse dark current in the initial part was described by the Sah-Noyce-Shockley theory. Creation of the favorable conditions for efficient collection of photogenerated charge carriers, decrease in the reverse dark current in the In/CdTe/Au detectors ensured obtaining the high-energy resolution spectra. Based on the electric field dependence of the 137Cs isotope spectrum, it was established that the applied bias V = 800 V was the optimal for the diodes formed on preliminary annealed CdTe crystals which ensured the energy resolution FWHM = 0.62 % at the 662 keV line","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124919511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The article contains the results of the investigation of light scattering on a half cylinder. As a result of numerical modulation, the formation of a zigzag photon jet was shown. was demonstrated. It was demonstrated that he zigzag shape of the photon jet is stable in a wide range (380- 410 ) of the angle of rotation of the half-cylinder. It was found that the minimum value of the half-width of the photon jet is approximately equal tо the diffraction limit, which opens up prospects for the use of the half cylinder as advanced optical tweezers.
{"title":"Formation a photonic zigzag by a half cylinder","authors":"M. Gavryliak, A. Maksimyak, P. Maksimyak","doi":"10.1117/12.2615193","DOIUrl":"https://doi.org/10.1117/12.2615193","url":null,"abstract":"The article contains the results of the investigation of light scattering on a half cylinder. As a result of numerical modulation, the formation of a zigzag photon jet was shown. was demonstrated. It was demonstrated that he zigzag shape of the photon jet is stable in a wide range (380- 410 ) of the angle of rotation of the half-cylinder. It was found that the minimum value of the half-width of the photon jet is approximately equal tо the diffraction limit, which opens up prospects for the use of the half cylinder as advanced optical tweezers.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124553906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Tchvialeva, Daniel C. Louie, Yuheng Wang, S. Kalia, H. Lui, Tim K. Lee
Recently optical imaging is focused on non-invasive methods which could be automated and provide diagnostics in vivo. Coherence and polarization encoding the wave phase transformation create additional channels of information compared with the amplitude-based techniques. The modification of polarization properties like depolarization, birefringence, and diattenuation are the subject of polarimetry. One of the depolarization metrics is the Degree of Polarization (DOP), which represent the fraction of polarized light maintained while light propagates in media, ranging from 1 for fully polarized to 0 for totally depolarized light. After constructing a one-shot Stokes polarimetry probe, we conducted a preliminary clinical trial including 20 benign, 28 malignant skin lesions. Also 59 normal skin sites where tested. Using DOP as a diagnostics criterion we were able to separate Malignant Melanomas against all other lesions. Another depolarization metric tested was the Polarization Memory Rate (PMR) which characterizes the decay of circularly polarized light relative to linearly polarized light as light propagates in a medium. PMR demonstrates a strong diagnostics potential separating all cancer against benign lesions.
{"title":"Polarization-based skin cancer detection in vivo","authors":"L. Tchvialeva, Daniel C. Louie, Yuheng Wang, S. Kalia, H. Lui, Tim K. Lee","doi":"10.1117/12.2621081","DOIUrl":"https://doi.org/10.1117/12.2621081","url":null,"abstract":"Recently optical imaging is focused on non-invasive methods which could be automated and provide diagnostics in vivo. Coherence and polarization encoding the wave phase transformation create additional channels of information compared with the amplitude-based techniques. The modification of polarization properties like depolarization, birefringence, and diattenuation are the subject of polarimetry. One of the depolarization metrics is the Degree of Polarization (DOP), which represent the fraction of polarized light maintained while light propagates in media, ranging from 1 for fully polarized to 0 for totally depolarized light. After constructing a one-shot Stokes polarimetry probe, we conducted a preliminary clinical trial including 20 benign, 28 malignant skin lesions. Also 59 normal skin sites where tested. Using DOP as a diagnostics criterion we were able to separate Malignant Melanomas against all other lesions. Another depolarization metric tested was the Polarization Memory Rate (PMR) which characterizes the decay of circularly polarized light relative to linearly polarized light as light propagates in a medium. PMR demonstrates a strong diagnostics potential separating all cancer against benign lesions.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"12126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129535822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Fodchuk, S. Ivakhnenko, V. Tkach, S. Balovsyak, M. Solodkyi, M. Borcha, I. Hutsuliak, A. Kuzmin, Y. Roman, Y. Smusenko, P. Pynuk
Values of average deformations in local regions of synthesized diamonds are determined using the power Fourier spectrum in the analysis of Kikuchi pattern. The degree of bands blurring on image is related with the deformation, which are quantitatively described through the changes of average radial period of the energy spectrum. The planar distribution of deformations is allowed to determine anisotropy by the magnitude and direction in the crystal.
{"title":"Fourier energy analysis of Kikuchi patterns for investigation of defect system of diamond crystals","authors":"I. Fodchuk, S. Ivakhnenko, V. Tkach, S. Balovsyak, M. Solodkyi, M. Borcha, I. Hutsuliak, A. Kuzmin, Y. Roman, Y. Smusenko, P. Pynuk","doi":"10.1117/12.2615864","DOIUrl":"https://doi.org/10.1117/12.2615864","url":null,"abstract":"Values of average deformations in local regions of synthesized diamonds are determined using the power Fourier spectrum in the analysis of Kikuchi pattern. The degree of bands blurring on image is related with the deformation, which are quantitatively described through the changes of average radial period of the energy spectrum. The planar distribution of deformations is allowed to determine anisotropy by the magnitude and direction in the crystal.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"2021 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128059993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Komal, S. Deepa, S. K. Pal, Sunil Kumar, P. Senthilkumaran
Ellipse fields and vector fields refer to the electric fields with predominant states of polarization as elliptical and linear, respectively. Singularities in these ellipse fields (C points and L lines) and vector fields (V points) refer to points where some of the parameters related to polarization are not defined. A simple technique for transforming a C point to a V point is suggested by diffracting a higher order integral C points from a fork grating. The fork grating transfers the orbital angular momentum (OAM) in each of the diffraction orders yielding polarization singularities with different OAM and spin angular momentum (SAM) compositions. A V point singularity is obtained in one of the diffracted orders depending on the OAM content in each of the superposing circular basis of the input C point, and the charge of the fork grating. The index of the desired V point and the order in which it occurs can be engineered by appropriately choosing the input C point beam and the charge of the fork grating. Therefore, this diffraction technique can be used for the transformation of an ellipse field singularity to a vector field singularity through just a single element, i.e., a fork grating.
{"title":"Ellipse field to vector field singularities through diffraction","authors":"B. Komal, S. Deepa, S. K. Pal, Sunil Kumar, P. Senthilkumaran","doi":"10.1117/12.2615493","DOIUrl":"https://doi.org/10.1117/12.2615493","url":null,"abstract":"Ellipse fields and vector fields refer to the electric fields with predominant states of polarization as elliptical and linear, respectively. Singularities in these ellipse fields (C points and L lines) and vector fields (V points) refer to points where some of the parameters related to polarization are not defined. A simple technique for transforming a C point to a V point is suggested by diffracting a higher order integral C points from a fork grating. The fork grating transfers the orbital angular momentum (OAM) in each of the diffraction orders yielding polarization singularities with different OAM and spin angular momentum (SAM) compositions. A V point singularity is obtained in one of the diffracted orders depending on the OAM content in each of the superposing circular basis of the input C point, and the charge of the fork grating. The index of the desired V point and the order in which it occurs can be engineered by appropriately choosing the input C point beam and the charge of the fork grating. Therefore, this diffraction technique can be used for the transformation of an ellipse field singularity to a vector field singularity through just a single element, i.e., a fork grating.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125957025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Mostovyi, S. Kuryshchuk, T. Kovaliuk, I. Koziarskyi, M. Solovan
This paper reports the results of an investigation of the electrical and photoelectrical properties of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction formed by the deposition of thin films PEDOT:PSS on CdZnTe substrates. The Cd1–xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity ρ ≈ 102 Ohm•cm. The values of the series resistance Rs and shunt resistance Rsh of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction were determined from the dependence of their differential resistance Rdif. The temperature dependencies of the height of the potential barrier of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction was determined from the I-V characteristics. The dominating current transport mechanisms through the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunctions were determined.
{"title":"Fabrication and investigation photosensitive of Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction","authors":"A. Mostovyi, S. Kuryshchuk, T. Kovaliuk, I. Koziarskyi, M. Solovan","doi":"10.1117/12.2615775","DOIUrl":"https://doi.org/10.1117/12.2615775","url":null,"abstract":"This paper reports the results of an investigation of the electrical and photoelectrical properties of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction formed by the deposition of thin films PEDOT:PSS on CdZnTe substrates. The Cd1–xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity ρ ≈ 102 Ohm•cm. The values of the series resistance Rs and shunt resistance Rsh of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction were determined from the dependence of their differential resistance Rdif. The temperature dependencies of the height of the potential barrier of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction was determined from the I-V characteristics. The dominating current transport mechanisms through the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunctions were determined.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"2021 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131098748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. O. Sorokatyi, V. Pylypko, V. Strebezhev, I. Yuriychuk, V. Strebezhev, V. M. Lipka, Y. Dobrovolsky
Optimizing effect of pulsed laser radiation on the structure of the In4Se3 and In4Тe3 epitaxial layers obtained by liquid phase epitaxy was studied by SEM, AFM, and EDS techniques. Ordered quasi-periodic micro- and nanostructures were created on the samples by laser melting. When studying the transverse chips of the structures based on the In4Se3, it was found that laser treatment leads to the formation of both narrow band gap and wide band gap phases of the In – Se system in the epitaxial layer. The action of laser treatment leads to the inversion of the conductivity type and to the formation of the laser photosensitive surface-barrier structures, reduces the influence of recombination processes on the heteroboundary. Optical studies have shown the efficiency of controlled laser action on the structural-phase state of the In4Se3 and In4Тe3 layers and improving their optical characteristics and photosensitivity. An increase in the sensitivity of the FTO-GaP diode structure at the wavelength 254 nm, as well as in the entire spectral range is observed with the laser treatment action
{"title":"The effect of photonic correction on the optical and photoelectric characteristics of the In4Se3, In4Тe3 and GaP epitaxial structures","authors":"M. O. Sorokatyi, V. Pylypko, V. Strebezhev, I. Yuriychuk, V. Strebezhev, V. M. Lipka, Y. Dobrovolsky","doi":"10.1117/12.2616570","DOIUrl":"https://doi.org/10.1117/12.2616570","url":null,"abstract":"Optimizing effect of pulsed laser radiation on the structure of the In4Se3 and In4Тe3 epitaxial layers obtained by liquid phase epitaxy was studied by SEM, AFM, and EDS techniques. Ordered quasi-periodic micro- and nanostructures were created on the samples by laser melting. When studying the transverse chips of the structures based on the In4Se3, it was found that laser treatment leads to the formation of both narrow band gap and wide band gap phases of the In – Se system in the epitaxial layer. The action of laser treatment leads to the inversion of the conductivity type and to the formation of the laser photosensitive surface-barrier structures, reduces the influence of recombination processes on the heteroboundary. Optical studies have shown the efficiency of controlled laser action on the structural-phase state of the In4Se3 and In4Тe3 layers and improving their optical characteristics and photosensitivity. An increase in the sensitivity of the FTO-GaP diode structure at the wavelength 254 nm, as well as in the entire spectral range is observed with the laser treatment action","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131789366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Kyrychok, Z. Kazhmuratov, P. Kyrychok, T. Klymenko, O. Sokol
We have developed a model of the medium color of the image, according to which the image moves away from the viewer at a certain distance, at which all the colors of the image are mixed, forming an inseparable color spot. That is, the image is converted into a conditional pixel, which is a mixture of colors of all its pixels. Based on the proposed model, it is possible to estimate the degree of closeness of the optical characteristics of the two images by the deviation of the average color. The method of medium color was realized with a specially designed program application for Kazakh Tenge as well as for Ukrainian Hryvnia evaluation. The measurement of optical characteristics was performed in the non-printed area near the watermark on both the face and reverse of the banknotes. The results show that the evaluation of the image by the deviation of the medium color according to the developed model is a fairly accurate indicator of wear of the printed layer, has an arithmetic mean error less than traditional optical evaluation methods - brightness change and color difference. Thus, the deviation of the medium color describes the human perception of banknote soiling fairly well. This method of medium color, which aims to eliminate the subjectivity of image evaluation, can be used to process both digital images and imprints.
{"title":"Optical methods development for banknote deterioration evaluation","authors":"T. Kyrychok, Z. Kazhmuratov, P. Kyrychok, T. Klymenko, O. Sokol","doi":"10.1117/12.2615675","DOIUrl":"https://doi.org/10.1117/12.2615675","url":null,"abstract":"We have developed a model of the medium color of the image, according to which the image moves away from the viewer at a certain distance, at which all the colors of the image are mixed, forming an inseparable color spot. That is, the image is converted into a conditional pixel, which is a mixture of colors of all its pixels. Based on the proposed model, it is possible to estimate the degree of closeness of the optical characteristics of the two images by the deviation of the average color. The method of medium color was realized with a specially designed program application for Kazakh Tenge as well as for Ukrainian Hryvnia evaluation. The measurement of optical characteristics was performed in the non-printed area near the watermark on both the face and reverse of the banknotes. The results show that the evaluation of the image by the deviation of the medium color according to the developed model is a fairly accurate indicator of wear of the printed layer, has an arithmetic mean error less than traditional optical evaluation methods - brightness change and color difference. Thus, the deviation of the medium color describes the human perception of banknote soiling fairly well. This method of medium color, which aims to eliminate the subjectivity of image evaluation, can be used to process both digital images and imprints.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132897049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Kopylchuk, I. Nikolaychuk, O. Voloshchuk, A. Motrich, O. Konovchuk
Insufficient intake of exogenous proteins under the conditions of irrational nutrition, deficiency of essential amino acids as well as increased loss of endogenous proteins with a characteristic negative nitrogen balance lead to the development of acute or chronic liver diseases. At the same time, the public availability of a wide range of drugs creates the problem of their unsystematic and irrational use for the correction of pathological conditions without proper compliance with the dosage and interval between doses. The consequence of uncontrolled self-medication is increasingly becoming drug induced liver injury.
{"title":"Biochemical and laser-polarimetric markers of hepatocyte cytolysis syndrome under conditions of toxic damage and protein deficiency","authors":"H. Kopylchuk, I. Nikolaychuk, O. Voloshchuk, A. Motrich, O. Konovchuk","doi":"10.1117/12.2617041","DOIUrl":"https://doi.org/10.1117/12.2617041","url":null,"abstract":"Insufficient intake of exogenous proteins under the conditions of irrational nutrition, deficiency of essential amino acids as well as increased loss of endogenous proteins with a characteristic negative nitrogen balance lead to the development of acute or chronic liver diseases. At the same time, the public availability of a wide range of drugs creates the problem of their unsystematic and irrational use for the correction of pathological conditions without proper compliance with the dosage and interval between doses. The consequence of uncontrolled self-medication is increasingly becoming drug induced liver injury.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130004836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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