Pub Date : 2005-03-15DOI: 10.1109/STHERM.2005.1412195
Y. Yang, M. Asheghi
High spatial and temporal resolution thermometry techniques are needed to investigate the impact of temperature rise, distribution and gradients on the electrostatic discharge (ESD) and electromigration (EM) phenomena in microelectronic devices and interconnects. This paper presents a laser scanning thermoreflectance microscope capable of mapping the transient surface temperature rise of microdevices subjected to the brief electrical heating pulse. The calibration of the thermoreflectance coefficient is performed using a differential scheme and by performing electrical resistance thermometry in the same structure. The temperature profile along the suspended metal bridge subjected to electrical stress was obtained to demonstrate the feasibility of this approach to study the impacts of absolute temperature rise, as well as its gradient on the failure due to electromigration in interconnects.
{"title":"Temperature mapping of metal interconnects using scanning thermoreflectance microscope","authors":"Y. Yang, M. Asheghi","doi":"10.1109/STHERM.2005.1412195","DOIUrl":"https://doi.org/10.1109/STHERM.2005.1412195","url":null,"abstract":"High spatial and temporal resolution thermometry techniques are needed to investigate the impact of temperature rise, distribution and gradients on the electrostatic discharge (ESD) and electromigration (EM) phenomena in microelectronic devices and interconnects. This paper presents a laser scanning thermoreflectance microscope capable of mapping the transient surface temperature rise of microdevices subjected to the brief electrical heating pulse. The calibration of the thermoreflectance coefficient is performed using a differential scheme and by performing electrical resistance thermometry in the same structure. The temperature profile along the suspended metal bridge subjected to electrical stress was obtained to demonstrate the feasibility of this approach to study the impacts of absolute temperature rise, as well as its gradient on the failure due to electromigration in interconnects.","PeriodicalId":256936,"journal":{"name":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114636812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-03-15DOI: 10.1109/STHERM.2005.1412202
A. Jain, M. Jensen
A fundamental understanding of electrolytic flow in micro and nano channels is essential for the design of microfluidic devices. In this paper, an analytical investigation is carried out to study the behavior of the electrostatic potential developed at the microchannel surface with the electrokinetic distance and zeta potential. The present work also deals with finding an analytical expression for the dimensional and non-dimensional velocity profile. An expression for the C/sub f/Re product is derived, based on the non-dimensional velocity profile. The characteristic thickness, which is an indicator of the formation of the electric double layer, varies with the ionic concentration of the electrolyte and this behavior has been plotted for different values of ionic strengths.
{"title":"Analytical modeling of electrokinetic effect on thermal transport in electrolytic flow in microchannels","authors":"A. Jain, M. Jensen","doi":"10.1109/STHERM.2005.1412202","DOIUrl":"https://doi.org/10.1109/STHERM.2005.1412202","url":null,"abstract":"A fundamental understanding of electrolytic flow in micro and nano channels is essential for the design of microfluidic devices. In this paper, an analytical investigation is carried out to study the behavior of the electrostatic potential developed at the microchannel surface with the electrokinetic distance and zeta potential. The present work also deals with finding an analytical expression for the dimensional and non-dimensional velocity profile. An expression for the C/sub f/Re product is derived, based on the non-dimensional velocity profile. The characteristic thickness, which is an indicator of the formation of the electric double layer, varies with the ionic concentration of the electrolyte and this behavior has been plotted for different values of ionic strengths.","PeriodicalId":256936,"journal":{"name":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123848378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-03-15DOI: 10.1109/STHERM.2005.1412171
L. Codecasa, D. D’Amore, P. Maffezzoni
A novel relation between the structure functions of one-port passive distributed thermal networks and the spatial distributions of thermal properties in components and package is proved. A novel tridiagonalization approach for approximating the structure functions of one-port distributed lumped thermal networks is also proposed.
{"title":"Physical interpretation and numerical approximation of structure functions of components and packages","authors":"L. Codecasa, D. D’Amore, P. Maffezzoni","doi":"10.1109/STHERM.2005.1412171","DOIUrl":"https://doi.org/10.1109/STHERM.2005.1412171","url":null,"abstract":"A novel relation between the structure functions of one-port passive distributed thermal networks and the spatial distributions of thermal properties in components and package is proved. A novel tridiagonalization approach for approximating the structure functions of one-port distributed lumped thermal networks is also proposed.","PeriodicalId":256936,"journal":{"name":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126482395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/STHERM.2005.1412149
T. Tarter
Over the last 25 years, thermal management of semiconductor devices has evolved into a highly sophisticated science. In the past, thermal management of typical IC packages was an 'add-on', many times an afterthought or a kludge to meet system requirements. In many cases, the device was packaged and thermal issues were worked out postproduction. (For mainframe and other specialized high-end systems, this is not the case; refer to the IBM TCM and other systems that have been in place for many years). The focus of this talk is on consumer-level electronics, and packages that go into end-user systems for the public masses such as personal computers, cell-phones, PDA's, and various forms of set-top boxes. The talk will encompass these types of devices and the evolution of cooling methods and materials, the growth of the industry and the new industries that are being created by advances in materials and processes. With the advent of 3-D and wafer level packaging new challenges in cooling, both in pure heat transfer and mechanical attributes, have driven a new era in cooling technology. Current and future miracles such as MEM's and nanotechnology are opening up completely different approaches in how thermal engineers solve problems, providing new tools and materials that can be manipulated and designed at the molecular and atomic levels. It is this new realm of materials and processes that the future of electronics depends upon. With no immediate solution in sight for the directly proportional relationship between computing power, speed, functionality and power density, heat transfer is a major key to the success of the industry and to the human evolution.
{"title":"Thermi award for 2005 \"macro to nano; thermal management is the key to the future\"","authors":"T. Tarter","doi":"10.1109/STHERM.2005.1412149","DOIUrl":"https://doi.org/10.1109/STHERM.2005.1412149","url":null,"abstract":"Over the last 25 years, thermal management of semiconductor devices has evolved into a highly sophisticated science. In the past, thermal management of typical IC packages was an 'add-on', many times an afterthought or a kludge to meet system requirements. In many cases, the device was packaged and thermal issues were worked out postproduction. (For mainframe and other specialized high-end systems, this is not the case; refer to the IBM TCM and other systems that have been in place for many years). The focus of this talk is on consumer-level electronics, and packages that go into end-user systems for the public masses such as personal computers, cell-phones, PDA's, and various forms of set-top boxes. The talk will encompass these types of devices and the evolution of cooling methods and materials, the growth of the industry and the new industries that are being created by advances in materials and processes. With the advent of 3-D and wafer level packaging new challenges in cooling, both in pure heat transfer and mechanical attributes, have driven a new era in cooling technology. Current and future miracles such as MEM's and nanotechnology are opening up completely different approaches in how thermal engineers solve problems, providing new tools and materials that can be manipulated and designed at the molecular and atomic levels. It is this new realm of materials and processes that the future of electronics depends upon. With no immediate solution in sight for the directly proportional relationship between computing power, speed, functionality and power density, heat transfer is a major key to the success of the industry and to the human evolution.","PeriodicalId":256936,"journal":{"name":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115858163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/stherm.2005.1412146
K. Azar, A. Poppe
Dr. Kaveh Azar is the President and CEO of Advanced Thermal Solutions, Inc. (ATS). Prior to this new appointment, Dr. Azar was the founder and manager of Lucent Technologies thermal management center, responsible for developing the next generation of cooling systems. In addition, Dr. Azar has authored Lucent’s thermal roadmap and served as the corporate thermal consultant. While at Lucent, he developed a state-of-theart thermal/fluids laboratory for simulation of components, boards and systems. Since 1985, Dr. Azar has been an active participant in electronics thermal community and has served as the organizer, general chair and the keynote speaker at international conferences sponsored by ASME, IEEE and AIAA. He has also been an invitee to national bodies such as NSF, NIST and NEMI for organizing government and industry research goals in electronics cooling. Dr. Azar has been an adjunct professor at a number of universities, and lecturers worldwide in analytical and experimental methods in electronics cooling. He holds more than 31 national and international patents, has published more than 71 articles, 3 book chapters and a book entitled, “Thermal Measurements in Electronics Cooling.” In addition, he serves as the Editor-in-Chief of the Electronics Cooling Magazine, and was awarded IEEE SEMITHERM Significant Contributor Award in the thermal management of electronics systems.
Kaveh Azar博士是Advanced Thermal Solutions, Inc. (ATS)的总裁兼首席执行官。在此之前，Azar博士是朗讯科技热管理中心的创始人和经理，负责开发下一代冷却系统。此外，他还撰写了朗讯的热路线图，并担任公司热顾问。在朗讯工作期间，他开发了一个先进的热/流体实验室，用于模拟组件、电路板和系统。自1985年以来，Azar博士一直是电子热社区的积极参与者，并担任由ASME, IEEE和AIAA赞助的国际会议的组织者，总主席和主题演讲者。他还被邀请到国家机构，如NSF, NIST和NEMI组织政府和工业研究目标在电子冷却。Azar博士曾担任多所大学的兼职教授，并在全球范围内担任电子冷却分析和实验方法的讲师。他拥有超过31项国家和国际专利，发表了超过71篇文章，3本书章节和一本名为“电子冷却中的热测量”的书。此外，他还担任电子冷却杂志的主编，并在电子系统的热管理方面被授予IEEE SEMITHERM重要贡献者奖。
{"title":"IEEE semi-therm XXI short courses and tutorials","authors":"K. Azar, A. Poppe","doi":"10.1109/stherm.2005.1412146","DOIUrl":"https://doi.org/10.1109/stherm.2005.1412146","url":null,"abstract":"Dr. Kaveh Azar is the President and CEO of Advanced Thermal Solutions, Inc. (ATS). Prior to this new appointment, Dr. Azar was the founder and manager of Lucent Technologies thermal management center, responsible for developing the next generation of cooling systems. In addition, Dr. Azar has authored Lucent’s thermal roadmap and served as the corporate thermal consultant. While at Lucent, he developed a state-of-theart thermal/fluids laboratory for simulation of components, boards and systems. Since 1985, Dr. Azar has been an active participant in electronics thermal community and has served as the organizer, general chair and the keynote speaker at international conferences sponsored by ASME, IEEE and AIAA. He has also been an invitee to national bodies such as NSF, NIST and NEMI for organizing government and industry research goals in electronics cooling. Dr. Azar has been an adjunct professor at a number of universities, and lecturers worldwide in analytical and experimental methods in electronics cooling. He holds more than 31 national and international patents, has published more than 71 articles, 3 book chapters and a book entitled, “Thermal Measurements in Electronics Cooling.” In addition, he serves as the Editor-in-Chief of the Electronics Cooling Magazine, and was awarded IEEE SEMITHERM Significant Contributor Award in the thermal management of electronics systems.","PeriodicalId":256936,"journal":{"name":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","volume":"93 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120814841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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