Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455739
M. Pozo-Gómez, J.D. Aguilera-Martín, P. de la Presa, C. Cruz, P. Marín, D. Matatagui, M. C. Horrillo
A theoretical study of the interaction between magnetostatic surface spin waves (MSWs) and magnetic nanoparticles (MNPs) is presented. The propagation of the MSW occurs on an yttrium iron garnet (YIG) thin film, and the MNPs are encapsulated in a tube. The operation of the sensor is based on the fact that a gas interacting with the nanostructures produces a change in their magnetization, and this, in turn, produces a measurable change in MSW propagation. The gas sensor structure is studied and characterized theoretically, through simulations. These simulations are also used in order to optimize the device through changes in the geometry, reaching sensitivities of 2 ppm in the magnetization of the sensitive material.
{"title":"Modeling and simulation of a magnonic gas sensor to detected diseases in human breath","authors":"M. Pozo-Gómez, J.D. Aguilera-Martín, P. de la Presa, C. Cruz, P. Marín, D. Matatagui, M. C. Horrillo","doi":"10.1109/CDE52135.2021.9455739","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455739","url":null,"abstract":"A theoretical study of the interaction between magnetostatic surface spin waves (MSWs) and magnetic nanoparticles (MNPs) is presented. The propagation of the MSW occurs on an yttrium iron garnet (YIG) thin film, and the MNPs are encapsulated in a tube. The operation of the sensor is based on the fact that a gas interacting with the nanostructures produces a change in their magnetization, and this, in turn, produces a measurable change in MSW propagation. The gas sensor structure is studied and characterized theoretically, through simulations. These simulations are also used in order to optimize the device through changes in the geometry, reaching sensitivities of 2 ppm in the magnetization of the sensitive material.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125034442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455740
J. Santaella, K. Critchley, S. Rodríguez-Bolívar, F. Gómez-Campos
This work reports the numerical simulation approach of an experimental electroluminescent QLED based on CuInS2/ZnS quantum dots as active layer, using the Transfer Hamiltonian approach. For that purpose, a simulation tool has been developed in Matlab to calculate the current density J(mA cm−2) and the fundamental I-V curve of each segment device independently. That tool allows us to thoroughly study and identify the critical parameters conducting to the different electrical behavior observed in the experimental QLED device segments.
{"title":"Electrical simulation of a QLED device based on quantum dots using the Transfer Hamiltonian approach","authors":"J. Santaella, K. Critchley, S. Rodríguez-Bolívar, F. Gómez-Campos","doi":"10.1109/CDE52135.2021.9455740","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455740","url":null,"abstract":"This work reports the numerical simulation approach of an experimental electroluminescent QLED based on CuInS2/ZnS quantum dots as active layer, using the Transfer Hamiltonian approach. For that purpose, a simulation tool has been developed in Matlab to calculate the current density J(mA cm−2) and the fundamental I-V curve of each segment device independently. That tool allows us to thoroughly study and identify the critical parameters conducting to the different electrical behavior observed in the experimental QLED device segments.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125556247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455744
L. Martínez-Herraiz, E. Ruiz, A. Braña, J. Plaza
In the present study, I-V curves and EFM-Phase measurement for surface polishing treatments are used in order to obtain electrical properties like breakdown voltages, leakage currents and Schottky Diode Barrier Height (SBH) calculated by Thermionic Emission model (TE) and parabolic model of EFM-Phase. The results showed that a polishing treatment with 0.03 μm grain size alumina powder solution induces a higher SBH, lower leakage current and higher breakdown voltage compared to that with 1 μm alumina solution.
{"title":"Effects of Surface Treatments on the Performance of CdZnTeSe Radiation Detectors","authors":"L. Martínez-Herraiz, E. Ruiz, A. Braña, J. Plaza","doi":"10.1109/CDE52135.2021.9455744","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455744","url":null,"abstract":"In the present study, I-V curves and EFM-Phase measurement for surface polishing treatments are used in order to obtain electrical properties like breakdown voltages, leakage currents and Schottky Diode Barrier Height (SBH) calculated by Thermionic Emission model (TE) and parabolic model of EFM-Phase. The results showed that a polishing treatment with 0.03 μm grain size alumina powder solution induces a higher SBH, lower leakage current and higher breakdown voltage compared to that with 1 μm alumina solution.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116527262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455724
Antonio J. Pérez-Ávila, E. Pérez, J. Roldán, C. Wenger, F. Jiménez-Molinos
A study on the use of memristors with discrete multilevel capability for the implementation of matrix-vector multiplication (MVM) is presented. We focus our analysis on the role of the discretization methodology employed to translate the matrix coefficients into the memristor device conductive levels. The implications on the MVM configurations are analysed in the context of hardware neural networks, oriented to the optimization of neuromorphic computing algorithms.
{"title":"Multilevel memristor based matrix-vector multiplication: influence of the discretization method","authors":"Antonio J. Pérez-Ávila, E. Pérez, J. Roldán, C. Wenger, F. Jiménez-Molinos","doi":"10.1109/CDE52135.2021.9455724","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455724","url":null,"abstract":"A study on the use of memristors with discrete multilevel capability for the implementation of matrix-vector multiplication (MVM) is presented. We focus our analysis on the role of the discretization methodology employed to translate the matrix coefficients into the memristor device conductive levels. The implications on the MVM configurations are analysed in the context of hardware neural networks, oriented to the optimization of neuromorphic computing algorithms.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125474005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455733
E. Moustafa, J. Pallarès, L. Marsal
In this research work, noteworthy progress has been achieved to fabricate stable inverted polymer solar cells using spray pyrolysis technique to deposit a thin film of ZnO as interfacial layer. A standard inverted polymer solar cells were fabricated by spin coating technique as reference devices. It was interesting to observe that the performance of the inverted polymer solar cells fabricated by ZnO-spray pyrolysis were quite similar to the reference samples fabricated by the ZnO-spin coating technique. However, the devices fabricated using the ZnO- spray pyrolysis showed higher current density as well as higher stability more than the ZnO- spin coating ones. Hence, this promising spray pyrolysis technique might be a breakthrough forward step for commercializing the inverted polymer solar cell based on mass production scale.
{"title":"Influence of Spray Pyrolysis Deposition Technique on the Performance and Stability of Polymer Solar Cells","authors":"E. Moustafa, J. Pallarès, L. Marsal","doi":"10.1109/CDE52135.2021.9455733","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455733","url":null,"abstract":"In this research work, noteworthy progress has been achieved to fabricate stable inverted polymer solar cells using spray pyrolysis technique to deposit a thin film of ZnO as interfacial layer. A standard inverted polymer solar cells were fabricated by spin coating technique as reference devices. It was interesting to observe that the performance of the inverted polymer solar cells fabricated by ZnO-spray pyrolysis were quite similar to the reference samples fabricated by the ZnO-spin coating technique. However, the devices fabricated using the ZnO- spray pyrolysis showed higher current density as well as higher stability more than the ZnO- spin coating ones. Hence, this promising spray pyrolysis technique might be a breakthrough forward step for commercializing the inverted polymer solar cell based on mass production scale.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131530848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455748
Jesús David Urbano-Gámez, C. Aracil, F. Perdigones, J. A. Fontanilla, José Manuel Quero
Biologists and physicians need tools that may study the biological mechanisms involved in the degeneration of tissues to understand and slow down the effects of the diseases. In this way, systems able to maintain a culture in its appropriate conditions, even long term, and compatible with electro-stimulation and acquisition, open a wide field of applications. The proposed design is a low-cost portable system that accomplishes all these requirements. It is based on the integration of an MEA with electronic systems, and a culture platform, offering the possibility of electro-stimulation of a cell or tissue culture and studying its electrical activity.
{"title":"Towards a 3D-Printed and Autonomous Culture Platform Integrated with Commercial Microelectrode Arrays","authors":"Jesús David Urbano-Gámez, C. Aracil, F. Perdigones, J. A. Fontanilla, José Manuel Quero","doi":"10.1109/CDE52135.2021.9455748","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455748","url":null,"abstract":"Biologists and physicians need tools that may study the biological mechanisms involved in the degeneration of tissues to understand and slow down the effects of the diseases. In this way, systems able to maintain a culture in its appropriate conditions, even long term, and compatible with electro-stimulation and acquisition, open a wide field of applications. The proposed design is a low-cost portable system that accomplishes all these requirements. It is based on the integration of an MEA with electronic systems, and a culture platform, offering the possibility of electro-stimulation of a cell or tissue culture and studying its electrical activity.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117272985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455730
F. Gómez-Campos, E. S. Skibinsky-Gitlin, S. Rodríguez-Bolívar, M. Califano, Panagiotis Rodosthenous, J. A. López-Villanueva, J. E. Carceller
Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.
{"title":"Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids","authors":"F. Gómez-Campos, E. S. Skibinsky-Gitlin, S. Rodríguez-Bolívar, M. Califano, Panagiotis Rodosthenous, J. A. López-Villanueva, J. E. Carceller","doi":"10.1109/CDE52135.2021.9455730","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455730","url":null,"abstract":"Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124788139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455728
A. E. Atamuratov, B. O. Jabbarova, M. Khalilloev, A. Yusupov, A.G. Loureriro
In this work we study the self-heating effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fin cross section in rectangular, trapeze and triangle form. The lattice temperature dependence on the channel length as well as on buried oxide thickness is considered. It is shown that for considered transistor structure the lattice temperature in the middle of the channel is lower than at lateral sides, near source and drain. Also, we have found at the same conditions the lattice temperature depends on shape of channel cross section too.
{"title":"Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries","authors":"A. E. Atamuratov, B. O. Jabbarova, M. Khalilloev, A. Yusupov, A.G. Loureriro","doi":"10.1109/CDE52135.2021.9455728","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455728","url":null,"abstract":"In this work we study the self-heating effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fin cross section in rectangular, trapeze and triangle form. The lattice temperature dependence on the channel length as well as on buried oxide thickness is considered. It is shown that for considered transistor structure the lattice temperature in the middle of the channel is lower than at lateral sides, near source and drain. Also, we have found at the same conditions the lattice temperature depends on shape of channel cross section too.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130370304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455731
Càndid Reig, F. Pardo, J. Boluda, F. Vegara, M. Cubells-Beltrán, Javio Sanchis, S. Abrunhosa, S. Cardoso
Nowadays, bio-inspiration is driving novel sensors designs, beyond vision sensors. By taking advantage of their compatibility with standard CMOS technologies, the integration of giant magneto-resistance (GMR) based magnetic sensors within such event-driven approaches is proposed. With this aim, several topologies of such GMR sensors have been designed, fabricated and characterized. In addition, integrated circuit interfaces of a standard CMOS technology are also proposed. Their suitability for this approach is then demonstrated by means of Cadence IC simulations.
{"title":"Advanced Giant Magnetoresistance (GMR) sensors for Selective-Change Driven (SCD) circuits","authors":"Càndid Reig, F. Pardo, J. Boluda, F. Vegara, M. Cubells-Beltrán, Javio Sanchis, S. Abrunhosa, S. Cardoso","doi":"10.1109/CDE52135.2021.9455731","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455731","url":null,"abstract":"Nowadays, bio-inspiration is driving novel sensors designs, beyond vision sensors. By taking advantage of their compatibility with standard CMOS technologies, the integration of giant magneto-resistance (GMR) based magnetic sensors within such event-driven approaches is proposed. With this aim, several topologies of such GMR sensors have been designed, fabricated and characterized. In addition, integrated circuit interfaces of a standard CMOS technology are also proposed. Their suitability for this approach is then demonstrated by means of Cadence IC simulations.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133873863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455756
F. Jiménez-Molinos, H. García, M. González, S. Dueñas, H. Castán, E. Miranda, F. Campabadal, J. Roldán
Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.
{"title":"Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge","authors":"F. Jiménez-Molinos, H. García, M. González, S. Dueñas, H. Castán, E. Miranda, F. Campabadal, J. Roldán","doi":"10.1109/CDE52135.2021.9455756","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455756","url":null,"abstract":"Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117284280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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