Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455725
M. B. González, M. Zabala, K. Kalam, A. Tamm, F. Jiménez-Molinos, J. Roldán, F. Campabadal
In this work, current fluctuations in the high resistance state of filamentary TiN/Ti/HfO2/Pt memristors are investigated. It has been found that random telegraph noise due to electron trapping and de-trapping processes into and from defects located close to the filamentary path, can alter the current tunneling path and induce large stochastic current fluctuations. In addition, the occurrence of irreversible current instabilities at high stressing conditions, and their voltage and time dependence are analysed.
{"title":"Analysis of the Characteristic Current Fluctuations in the High Resistance State of HfO2-based Memristors","authors":"M. B. González, M. Zabala, K. Kalam, A. Tamm, F. Jiménez-Molinos, J. Roldán, F. Campabadal","doi":"10.1109/CDE52135.2021.9455725","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455725","url":null,"abstract":"In this work, current fluctuations in the high resistance state of filamentary TiN/Ti/HfO2/Pt memristors are investigated. It has been found that random telegraph noise due to electron trapping and de-trapping processes into and from defects located close to the filamentary path, can alter the current tunneling path and induce large stochastic current fluctuations. In addition, the occurrence of irreversible current instabilities at high stressing conditions, and their voltage and time dependence are analysed.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121325122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455750
Elena López-Aymerich, M. Dimaki, W. Svendsen, S. Hernández, D. Navarro‐Urrios, Mauricio Moreno, F. Serras, A. Romano-Rodríguez
In this work we present the results obtained on the simulation and nanofabrication of photonic crystals based on silicon nanopillars. The simulations show the formation of photonic band gaps within 1.31 and 1.89μm, with a gap-to-midgap ratio approaching 40%. The introduction of waveguides and cavities prove the adaptability of these structures to tune the wavelengths allowed to be transmitted through the system within the photonic band gaps. On the other hand, thanks to the use of advanced nanofabrication techniques, the modelled structures have been successfully fabricated.
{"title":"Simulations and nanofabrication of photonic crystals based on silicon pillars for mechanical biosensors","authors":"Elena López-Aymerich, M. Dimaki, W. Svendsen, S. Hernández, D. Navarro‐Urrios, Mauricio Moreno, F. Serras, A. Romano-Rodríguez","doi":"10.1109/CDE52135.2021.9455750","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455750","url":null,"abstract":"In this work we present the results obtained on the simulation and nanofabrication of photonic crystals based on silicon nanopillars. The simulations show the formation of photonic band gaps within 1.31 and 1.89μm, with a gap-to-midgap ratio approaching 40%. The introduction of waveguides and cavities prove the adaptability of these structures to tune the wavelengths allowed to be transmitted through the system within the photonic band gaps. On the other hand, thanks to the use of advanced nanofabrication techniques, the modelled structures have been successfully fabricated.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122623887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455720
D. Caudevilla, Y. Berencén, S. Algaidy, F. Zenteno, J. Olea, E. Andrés, R. García-Hernansanz, A. del Prado, D. Pastor, E. García‐Hemme
Germanium hyperdoped with deep level donors, such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a combination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing.
{"title":"Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization","authors":"D. Caudevilla, Y. Berencén, S. Algaidy, F. Zenteno, J. Olea, E. Andrés, R. García-Hernansanz, A. del Prado, D. Pastor, E. García‐Hemme","doi":"10.1109/CDE52135.2021.9455720","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455720","url":null,"abstract":"Germanium hyperdoped with deep level donors, such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a combination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115227739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455727
B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Gioia, M. Samnouni, S. Pérez, T. González, J. Mateos
Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the values of several technological parameters, we analyze their influence on the edge fringing capacitance in a GaN SBD. We have found that the parameters related with the dielectric used for the passivation and the lateral extension of the epilayer significantly affect the fringing capacitance, thus increasing the value of the total capacitance above the ideal one.
{"title":"Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations","authors":"B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Gioia, M. Samnouni, S. Pérez, T. González, J. Mateos","doi":"10.1109/CDE52135.2021.9455727","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455727","url":null,"abstract":"Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the values of several technological parameters, we analyze their influence on the edge fringing capacitance in a GaN SBD. We have found that the parameters related with the dielectric used for the passivation and the lateral extension of the epilayer significantly affect the fringing capacitance, thus increasing the value of the total capacitance above the ideal one.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124436040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455738
C. I. Douglas, C. Núñez, D. Gibson, M. Caffio
Pressure sensors are widely used devices in a variety of sectors from automotive, medical, industrial and consumer devices. These applications can range from ultrasensitive e-skin, touch screen displays, medical diagnostics and health monitoring [1]. To compete with current industrial pressure sensors, a new easily fabricated, reproducible, and highly sensitive pressure sensor compatible with temperature sensitive substrates (plastic, fabrics, paper etc) is required. Within this paper the fabrication process is described, as well as showing the use of PDMS as a protective layer. Characterization of the fabricated sensors showed a sensitivity of 0.0418 mV/kPa over a range from 1 to 50 kPa. Cyclic testing showed that the use of a protective PDMS coating increased the durability of the sensors, keeping the voltage produced steady with no visible drop after large numbers of presses.
{"title":"Development of Flexible and High Sensitivity Graphene Foam Based Pressure Sensors","authors":"C. I. Douglas, C. Núñez, D. Gibson, M. Caffio","doi":"10.1109/CDE52135.2021.9455738","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455738","url":null,"abstract":"Pressure sensors are widely used devices in a variety of sectors from automotive, medical, industrial and consumer devices. These applications can range from ultrasensitive e-skin, touch screen displays, medical diagnostics and health monitoring [1]. To compete with current industrial pressure sensors, a new easily fabricated, reproducible, and highly sensitive pressure sensor compatible with temperature sensitive substrates (plastic, fabrics, paper etc) is required. Within this paper the fabrication process is described, as well as showing the use of PDMS as a protective layer. Characterization of the fabricated sensors showed a sensitivity of 0.0418 mV/kPa over a range from 1 to 50 kPa. Cyclic testing showed that the use of a protective PDMS coating increased the durability of the sensors, keeping the voltage produced steady with no visible drop after large numbers of presses.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123337152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455736
Víctor Orejuela, I. García, C. Sánchez, M. Hinojosa, S. Dadgostar, Monalisa Ghosh, P. Roca i Cabarrocas, I. Rey‐Stolle
Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junction solar cells using two types of Ge|Si virtual substrates. The first uses a thick (2–5 μm) Ge layer grown by CVD, which acts as the bottom Ge subcell. The second, grown by low-temperature RT-PECVD, has a thickness of a few tens of nanometres, with the Si substrate acting as Si bottom cell. We discuss the challenges related to each design (formation of cracks, parasitic absorption in the Ge layer, dislocations, …), present the theoretical design and show the experimental results obtained. Finally, an advanced approach using embedded porous Si layers as buffer layers for crack mitigation is also presented.
{"title":"Advances in the development of high efficiency III-V multijunction solar cells on Ge|Si virtual substrates","authors":"Víctor Orejuela, I. García, C. Sánchez, M. Hinojosa, S. Dadgostar, Monalisa Ghosh, P. Roca i Cabarrocas, I. Rey‐Stolle","doi":"10.1109/CDE52135.2021.9455736","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455736","url":null,"abstract":"Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junction solar cells using two types of Ge|Si virtual substrates. The first uses a thick (2–5 μm) Ge layer grown by CVD, which acts as the bottom Ge subcell. The second, grown by low-temperature RT-PECVD, has a thickness of a few tens of nanometres, with the Si substrate acting as Si bottom cell. We discuss the challenges related to each design (formation of cracks, parasitic absorption in the Ge layer, dislocations, …), present the theoretical design and show the experimental results obtained. Finally, an advanced approach using embedded porous Si layers as buffer layers for crack mitigation is also presented.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127569535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455755
A. Pacheco-Sánchez, D. Jiménez
A $Y$ -function based method (YFM) is used here to extract the contact resistance $R_{mathrm{c}}$ of different two-dimensional (2D) field-effect transistor (FET) technologies. The methodology relies on individual transfer characteristics, at a single drain-to-source voltage, of devices from a same technology with different channel lengths. In contrast to the widely used transfer length method where a global-back gated test structure is required, the YFM presented here can be applied to 2D-FETs regardless the gate architecture. This method does not require the fabrication of dedicated test structures and hence it can be a useful and immediate tool for device characterization and scaling studies. $R_{mathrm{c}}$ is extracted here for graphene-, black phosphorus-, WS2 and MoS2-FETs using the proposed methodology and considering the mobility degradation coefficient in the underlying model. The extracted values are in good agreement with the ones obtained with other approaches. An accurate description of the experimental drain current and channel resistance is achieved by using the extracted parameters in the corresponding equation.
{"title":"A contact resistance extraction method of 2D-FET technologies without test structures","authors":"A. Pacheco-Sánchez, D. Jiménez","doi":"10.1109/CDE52135.2021.9455755","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455755","url":null,"abstract":"A $Y$ -function based method (YFM) is used here to extract the contact resistance $R_{mathrm{c}}$ of different two-dimensional (2D) field-effect transistor (FET) technologies. The methodology relies on individual transfer characteristics, at a single drain-to-source voltage, of devices from a same technology with different channel lengths. In contrast to the widely used transfer length method where a global-back gated test structure is required, the YFM presented here can be applied to 2D-FETs regardless the gate architecture. This method does not require the fabrication of dedicated test structures and hence it can be a useful and immediate tool for device characterization and scaling studies. $R_{mathrm{c}}$ is extracted here for graphene-, black phosphorus-, WS2 and MoS2-FETs using the proposed methodology and considering the mobility degradation coefficient in the underlying model. The extracted values are in good agreement with the ones obtained with other approaches. An accurate description of the experimental drain current and channel resistance is achieved by using the extracted parameters in the corresponding equation.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122780793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455746
Manuel Pelayo Garcia, Kevin L. McAughey, D. Gibson, D. Hughes, C. Núñez
Ultrasonic sensors have demonstrated great potential for non-destructive testing (NDT) of materials, being widely applicable in health care/monitoring (e.g. biomedical, muscle recovery, cancer early detection), industry, and defence (e.g. proximity sensors used in unnamed aerial vehicles - UAV; detection of submarines). Most conventional ultrasonic sensors are based on monolithic piezoelectric ceramic materials (e.g. PZT, PbTiO3 or PMN-PT) which are too bulky and nonconforming to enable their integration on flexible substrates. To address these drawbacks, ZnO thin films have emerged as an alternative piezoelectric material for low profile and high-frequency ultrasonic transducers due to properties such as high piezoelectric coefficient, great tuneability of working frequency, large bandwidth, low-cost of materials and manufacturing, compatibility with flexible substrates, and biocompatibility. This work analyses glancing angle deposition (GLAD) of ZnO thin films at different reactive sputtering conditions optimised to meet dual requirements of highly crystalline c-axis orientation while controlling the inclined angle of resulting nanostructured films for their application as piezoelectric material in ultrasonic sensors. Characteristics of ZnO nanostructured films, including morphology, crystallinity, and composition, are analysed as a function of GLAD conditions (gas flux angle with respect the substrate surface (α) and plasma conditions (plasma power, substrate position, substrate temperature, total gas-flow, and processing/reactive gas ratio). The obtained piezoelectric values for β angles of α=88° present d33 values of 33.1±1.7 pm/V, surpassing the piezoelectric coefficient found in ZnO bulk 12.4 pm/V. The influence of film titled angle (β) on piezoelectric performance for ultrasound sensing applications will be studied.
{"title":"Glancing Angle Deposition of Nanostructured ZnO Films for Ultrasonics","authors":"Manuel Pelayo Garcia, Kevin L. McAughey, D. Gibson, D. Hughes, C. Núñez","doi":"10.1109/CDE52135.2021.9455746","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455746","url":null,"abstract":"Ultrasonic sensors have demonstrated great potential for non-destructive testing (NDT) of materials, being widely applicable in health care/monitoring (e.g. biomedical, muscle recovery, cancer early detection), industry, and defence (e.g. proximity sensors used in unnamed aerial vehicles - UAV; detection of submarines). Most conventional ultrasonic sensors are based on monolithic piezoelectric ceramic materials (e.g. PZT, PbTiO3 or PMN-PT) which are too bulky and nonconforming to enable their integration on flexible substrates. To address these drawbacks, ZnO thin films have emerged as an alternative piezoelectric material for low profile and high-frequency ultrasonic transducers due to properties such as high piezoelectric coefficient, great tuneability of working frequency, large bandwidth, low-cost of materials and manufacturing, compatibility with flexible substrates, and biocompatibility. This work analyses glancing angle deposition (GLAD) of ZnO thin films at different reactive sputtering conditions optimised to meet dual requirements of highly crystalline c-axis orientation while controlling the inclined angle of resulting nanostructured films for their application as piezoelectric material in ultrasonic sensors. Characteristics of ZnO nanostructured films, including morphology, crystallinity, and composition, are analysed as a function of GLAD conditions (gas flux angle with respect the substrate surface (α) and plasma conditions (plasma power, substrate position, substrate temperature, total gas-flow, and processing/reactive gas ratio). The obtained piezoelectric values for β angles of α=88° present d33 values of 33.1±1.7 pm/V, surpassing the piezoelectric coefficient found in ZnO bulk 12.4 pm/V. The influence of film titled angle (β) on piezoelectric performance for ultrasound sensing applications will be studied.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124020845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455729
Alfonsina Abat Amelenan Torimtubun, Jorge Follana‐Berná, J. Pallarès, Á. Sastre‐Santos, L. Marsal
Molecular design, processing method and device engineering are some important strategies to improve the performance of organic solar cells (OSC). In this study, we investigate the influence of the thermal annealing (TA) treatment on the performance of ternary OSC based on PTB7-Th:PC70BM bulk heterojunction incorporating a newly designed solution-processable phthalocyanine small molecule, copper fluorinated phthalocyanine (CuPcF48). The addition of CuPcF48 as a third component has shown to improve the power conversion efficiency (PCE) of up to 7% in ternary OSC compared to binary OSC through molecular design and ternary strategies. On the other hand, employing device engineering through TA treatment, a drop in PCE for both binary and ternary OSC upon thermal annealing were observed. The results suggest that the device engineering strategy by thermal annealing treatment may not suitable for the device improvement of PTB7-Th:PC70BM-based blend.
{"title":"Effect of thermal annealing on the performance of PTB7-Th:PC70BM-based ternary organic solar cells","authors":"Alfonsina Abat Amelenan Torimtubun, Jorge Follana‐Berná, J. Pallarès, Á. Sastre‐Santos, L. Marsal","doi":"10.1109/CDE52135.2021.9455729","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455729","url":null,"abstract":"Molecular design, processing method and device engineering are some important strategies to improve the performance of organic solar cells (OSC). In this study, we investigate the influence of the thermal annealing (TA) treatment on the performance of ternary OSC based on PTB7-Th:PC70BM bulk heterojunction incorporating a newly designed solution-processable phthalocyanine small molecule, copper fluorinated phthalocyanine (CuPcF48). The addition of CuPcF48 as a third component has shown to improve the power conversion efficiency (PCE) of up to 7% in ternary OSC compared to binary OSC through molecular design and ternary strategies. On the other hand, employing device engineering through TA treatment, a drop in PCE for both binary and ternary OSC upon thermal annealing were observed. The results suggest that the device engineering strategy by thermal annealing treatment may not suitable for the device improvement of PTB7-Th:PC70BM-based blend.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"09 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128933938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455723
C. Cruz González, B. Sahelices, J. Jiménez, O. G. Ossorio, H. Castán, M. González, G. Vinuesa, S. Dueñas, F. Campabadal, H. García
A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli.
{"title":"Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes","authors":"C. Cruz González, B. Sahelices, J. Jiménez, O. G. Ossorio, H. Castán, M. González, G. Vinuesa, S. Dueñas, F. Campabadal, H. García","doi":"10.1109/CDE52135.2021.9455723","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455723","url":null,"abstract":"A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132233220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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