Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056657
A. T. Nguyen, Fjodors Tjulkins, E. Knut, Aasmundtveit, N. Hoivik, L. Hoff, Ole-Johannes H. N. Grymyr, P. Halvorsen, K. Imenes
This paper describes recent improvements of a myocardial accelerometer device, which can be used to perform continuous monitoring of heart activity with high specificity and sensitivity. The device is specified to be used for patients undergoing coronary bypass graft surgery. The improved device can reduce the complexity of implantation experienced with the former generation of sensors. A built-in function enabling temporary pacing was also integrated. Besides being an implantable accelerometer sensor, the device can pace the heart and sense the electrical signals when connected to an external pulse generator. Compliance tests for implantable medical device were carried out to prove the essential requirements set by the International Electrotechnical Commission.
{"title":"Packaging of a multifunctional implantable heart monitoring device","authors":"A. T. Nguyen, Fjodors Tjulkins, E. Knut, Aasmundtveit, N. Hoivik, L. Hoff, Ole-Johannes H. N. Grymyr, P. Halvorsen, K. Imenes","doi":"10.1109/DTIP.2014.7056657","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056657","url":null,"abstract":"This paper describes recent improvements of a myocardial accelerometer device, which can be used to perform continuous monitoring of heart activity with high specificity and sensitivity. The device is specified to be used for patients undergoing coronary bypass graft surgery. The improved device can reduce the complexity of implantation experienced with the former generation of sensors. A built-in function enabling temporary pacing was also integrated. Besides being an implantable accelerometer sensor, the device can pace the heart and sense the electrical signals when connected to an external pulse generator. Compliance tests for implantable medical device were carried out to prove the essential requirements set by the International Electrotechnical Commission.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124882689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056698
B. Safaie, M. Shamshirsaz, M. Bahrami
Micromachining of micro electromechanical systems such as other fabrication processes has inherent variation that leads to uncertain dimensional and material properties. Methods for optimization under uncertainty analysis can be used to reduce micro device sensitivity to these uncertainties in order to create a more robust design, thereby increasing reliability and yield. In this paper, approaches for uncertainty and sensitivity analysis, and robust optimization of an electro-thermal micro actuator are applied to account the influence of dimensional and material property uncertainties on micro actuator tip deflection. These uncertainties include variation of thickness, length and width of cold and hot arms, gap, Young modulus and thermal expansion coefficient. A simple and efficient uncertainty analysis method is performed by creating second-order metamodel through Box-Behnken design and Monte Carlo simulation. Also, the influence of uncertainties has been examined using direct Monte Carlo Simulation method. The results show that the standard deviations of tip deflection generated by these uncertainty analysis methods are very close. Simulation results of tip deflection have been validated by a comparison with experimental results in literature. The analysis is performed at multiple input voltages to estimate uncertainty bands around the deflection curve. Experimental data fall within 95% confidence boundary obtained by simulation results. Also, the sensitivity analysis results demonstrate that micro actuator performance has been affected more by thermal expansion coefficient and micro actuator gap uncertainties. Finally, approaches for robust optimization to achieve the optimal designs for micro actuator are used. The proposed robust micro actuators are less sensitive to uncertainties. For this goal, two methods including Genetic Algorithm and Non-dominated Sorting Genetic Algorithm are employed to find the robust designs for micro actuator.
{"title":"Robust design under uncertainties of electro-thermal microactuator","authors":"B. Safaie, M. Shamshirsaz, M. Bahrami","doi":"10.1109/DTIP.2014.7056698","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056698","url":null,"abstract":"Micromachining of micro electromechanical systems such as other fabrication processes has inherent variation that leads to uncertain dimensional and material properties. Methods for optimization under uncertainty analysis can be used to reduce micro device sensitivity to these uncertainties in order to create a more robust design, thereby increasing reliability and yield. In this paper, approaches for uncertainty and sensitivity analysis, and robust optimization of an electro-thermal micro actuator are applied to account the influence of dimensional and material property uncertainties on micro actuator tip deflection. These uncertainties include variation of thickness, length and width of cold and hot arms, gap, Young modulus and thermal expansion coefficient. A simple and efficient uncertainty analysis method is performed by creating second-order metamodel through Box-Behnken design and Monte Carlo simulation. Also, the influence of uncertainties has been examined using direct Monte Carlo Simulation method. The results show that the standard deviations of tip deflection generated by these uncertainty analysis methods are very close. Simulation results of tip deflection have been validated by a comparison with experimental results in literature. The analysis is performed at multiple input voltages to estimate uncertainty bands around the deflection curve. Experimental data fall within 95% confidence boundary obtained by simulation results. Also, the sensitivity analysis results demonstrate that micro actuator performance has been affected more by thermal expansion coefficient and micro actuator gap uncertainties. Finally, approaches for robust optimization to achieve the optimal designs for micro actuator are used. The proposed robust micro actuators are less sensitive to uncertainties. For this goal, two methods including Genetic Algorithm and Non-dominated Sorting Genetic Algorithm are employed to find the robust designs for micro actuator.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121560953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056641
Aliza Aini Binti Md. Ralib Raghib, A. Nordin
An analysis of the electromechanical coupling coefficient for surface acoustic wave (SAW) devices developed in complementary metal oxide semiconductor (CMOS) is presented in this work. This SAW resonator uses zinc oxide (ZnO) as its piezoelectric thin film. The resonator's interdigitated electrodes were designed such that it produces 1 GHz resonance frequency. Finite element simulation of the CMOS SAW resonator was conducted using COMSOL Mutliphysics™. Three different analyses namely eigenfrequency, frequency domain and time domain analyses were conducted. The thicknesses of ZnO were varied from 2 μm to 5.5 μm with step size of 0.5 μm. Simulation results indicate maximum electromechanical coupling coefficient is achieved when normalized thickness is in the range of 0.63 <; (hzno/λ) <; 0.78. Experimental measurements were conducted on the fabricated CMOS SAW resonator and compared with the simulation results.
{"title":"Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure","authors":"Aliza Aini Binti Md. Ralib Raghib, A. Nordin","doi":"10.1109/DTIP.2014.7056641","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056641","url":null,"abstract":"An analysis of the electromechanical coupling coefficient for surface acoustic wave (SAW) devices developed in complementary metal oxide semiconductor (CMOS) is presented in this work. This SAW resonator uses zinc oxide (ZnO) as its piezoelectric thin film. The resonator's interdigitated electrodes were designed such that it produces 1 GHz resonance frequency. Finite element simulation of the CMOS SAW resonator was conducted using COMSOL Mutliphysics™. Three different analyses namely eigenfrequency, frequency domain and time domain analyses were conducted. The thicknesses of ZnO were varied from 2 μm to 5.5 μm with step size of 0.5 μm. Simulation results indicate maximum electromechanical coupling coefficient is achieved when normalized thickness is in the range of 0.63 <; (hzno/λ) <; 0.78. Experimental measurements were conducted on the fabricated CMOS SAW resonator and compared with the simulation results.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127008002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056694
T. Dinh, P. Joubert, E. Martincic, E. Dufour-Gergam
Kapton-based flexible pressure sensor arrays are fabricated using a new technology of film transfer. The sensors are dedicated to the non-invasive measurement of pressure/force in robotic, sport and medical applications. The sensors are of a capacitive type, and composed of two millimetric copper electrodes, separated by a polydimethylsiloxane (PDMS) deformable dielectric layer. On the flexible arrays, a very small curvature radius is possible without any damage to the sensors. The inhomogeneity of the capacitances in array is quite low (deviation of ±7% compared to the average value). The process is accurate and reproducible (transfer yield of 100%). The electrical characterization is also presented. In the preliminary electro-mechanical characterization, a sensor (with a PDMS dielectric layer of 660 μm thickness and a free load capacitance of 480 fF) undergoes a capacitance change of 17% under a 300 kPa normal stress.
{"title":"Non-invasive capacitive pressure sensor: Microfabrication process and first electro-mechanical characterization","authors":"T. Dinh, P. Joubert, E. Martincic, E. Dufour-Gergam","doi":"10.1109/DTIP.2014.7056694","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056694","url":null,"abstract":"Kapton-based flexible pressure sensor arrays are fabricated using a new technology of film transfer. The sensors are dedicated to the non-invasive measurement of pressure/force in robotic, sport and medical applications. The sensors are of a capacitive type, and composed of two millimetric copper electrodes, separated by a polydimethylsiloxane (PDMS) deformable dielectric layer. On the flexible arrays, a very small curvature radius is possible without any damage to the sensors. The inhomogeneity of the capacitances in array is quite low (deviation of ±7% compared to the average value). The process is accurate and reproducible (transfer yield of 100%). The electrical characterization is also presented. In the preliminary electro-mechanical characterization, a sensor (with a PDMS dielectric layer of 660 μm thickness and a free load capacitance of 480 fF) undergoes a capacitance change of 17% under a 300 kPa normal stress.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133030127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056667
S. Gorreta, J. Pons-Nin, M. Dominguez-Pumar, E. Blokhina, O. Feely
Dielectric charging of insulating films in microelectromechanical systems (MEMS) has a crucial effect on the operation of those devices. A new method is presented in order to characterize the dynamics of the charge trapped in the dielectric layer of MEMS devices. This allows knowing the state of the charge at each sampling time without distorting the measurement. This approach allows one to model the expected behaviour of the trapped charge inside the dielectric as a response to a sigma-delta control of charge. The goodness of the proposed approach is obtained by matching the experimentally obtained closed loop response with the one predicted by the model obtained using the proposed characterization method.
{"title":"Characterization method of the dynamics of the trapped charge in contactless capacitive MEMS","authors":"S. Gorreta, J. Pons-Nin, M. Dominguez-Pumar, E. Blokhina, O. Feely","doi":"10.1109/DTIP.2014.7056667","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056667","url":null,"abstract":"Dielectric charging of insulating films in microelectromechanical systems (MEMS) has a crucial effect on the operation of those devices. A new method is presented in order to characterize the dynamics of the charge trapped in the dielectric layer of MEMS devices. This allows knowing the state of the charge at each sampling time without distorting the measurement. This approach allows one to model the expected behaviour of the trapped charge inside the dielectric as a response to a sigma-delta control of charge. The goodness of the proposed approach is obtained by matching the experimentally obtained closed loop response with the one predicted by the model obtained using the proposed characterization method.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130420644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056696
A. Tixier-Mita, Takuya Takahashi, H. Fujita, H. Toshiyoshi, I. Mori, Y. Mita, O. Français, B. Le Pioufle
The purpose of this article is to present first results of electrical detection of micro-beads, using impedance spectroscopy technique, with a wholly integrated device. The whole integration concerns as well the electronics as the micro-fluidic integration inside a LSI device, by post-processing. The results are first steps in the development of this wholly integrated device, intended to be for biological cells analyses.
{"title":"Detection of micro-beads by impedance spectroscopy: Towards a wholly integrated electronic device for biological cells applications","authors":"A. Tixier-Mita, Takuya Takahashi, H. Fujita, H. Toshiyoshi, I. Mori, Y. Mita, O. Français, B. Le Pioufle","doi":"10.1109/DTIP.2014.7056696","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056696","url":null,"abstract":"The purpose of this article is to present first results of electrical detection of micro-beads, using impedance spectroscopy technique, with a wholly integrated device. The whole integration concerns as well the electronics as the micro-fluidic integration inside a LSI device, by post-processing. The results are first steps in the development of this wholly integrated device, intended to be for biological cells analyses.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132542589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056653
Guillaume Lehée, F. Parrain, J. Riou, A. Bosseboeuf
Resonant structures based on the combination of an electromechanical microresonator made in a thick single crystal Si layer and a differential piezoresistive detection with Si nanowires is a recent concept allowing a breakthrough in downscaling physical resonant sensors with equal to better performances. With an optimized design, the vacuum quality factor of these resonant structures will be ultimately limited by thermoelastic damping. Existing analytical models reasonably well predict the thermoelastic damping of transverse vibrations for beam resonators with and without axial stress but their limitations for resonators with more complex geometry is difficult to estimate. In this paper we investigate by Finite Element Method the effect of axial stress and of nanowire strain gages integration on the thermoelastic damping of vibrations of a beam resonator with a central inertial mass. Results show that axial stress effect depends on actuation force and that nanowires mainly alter the thermoelastic damping through an increase of resonator stiffness. As expected thermoelastic damping is reduced when torsional vibration modes are involved. Results are compared or analyzed with published analytical models.
{"title":"Thermoelastic damping modeling of a Si resonant beam with nanowire strain gauges","authors":"Guillaume Lehée, F. Parrain, J. Riou, A. Bosseboeuf","doi":"10.1109/DTIP.2014.7056653","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056653","url":null,"abstract":"Resonant structures based on the combination of an electromechanical microresonator made in a thick single crystal Si layer and a differential piezoresistive detection with Si nanowires is a recent concept allowing a breakthrough in downscaling physical resonant sensors with equal to better performances. With an optimized design, the vacuum quality factor of these resonant structures will be ultimately limited by thermoelastic damping. Existing analytical models reasonably well predict the thermoelastic damping of transverse vibrations for beam resonators with and without axial stress but their limitations for resonators with more complex geometry is difficult to estimate. In this paper we investigate by Finite Element Method the effect of axial stress and of nanowire strain gages integration on the thermoelastic damping of vibrations of a beam resonator with a central inertial mass. Results show that axial stress effect depends on actuation force and that nanowires mainly alter the thermoelastic damping through an increase of resonator stiffness. As expected thermoelastic damping is reduced when torsional vibration modes are involved. Results are compared or analyzed with published analytical models.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115335150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056660
Wen-Chao Feng, Che-wei Hsu, Hsi-Chien Liu, Gou-Jen Wang
In this study, a novel glucose biosensor based on a 3D silicon nanowire array (SNA) electrode was proposed. Metal-assisted etching (MAE) method using an AgNO3 and HF mixing solution as the etchant is employed for fast etching of a silicon wafer to form the SNA electrode. A thin gold shell is then coated onto each silicon nanowire by sputtering. Potassium ferricyanide, glucose oxidase, and a Nafion thin film were then sequentially coated onto the fabricated 3D SNA for glucose detection. The effective sensing area of the fabricated 3D SNA electrode was measured to be 11.35 folds that of the corresponding plane electrode by steady-state voltammetry. Actual glucose detections illustrated that the SNA based devices could function at a sensitivity of 1,034 μA mM-1 cm-2 with a linear detection range from 55.1 μM-11.0 mM and detection limit of 11 μM. A fast response time of 2 s was also demonstrated. The proposed 3D SNA based glucose biosensing scheme possesses advantages of low cost, high sensitivity, and fast response.
{"title":"A cost effective and highly sensitive glucose biosensor based on a 3D silicon nano wire array electrode","authors":"Wen-Chao Feng, Che-wei Hsu, Hsi-Chien Liu, Gou-Jen Wang","doi":"10.1109/DTIP.2014.7056660","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056660","url":null,"abstract":"In this study, a novel glucose biosensor based on a 3D silicon nanowire array (SNA) electrode was proposed. Metal-assisted etching (MAE) method using an AgNO3 and HF mixing solution as the etchant is employed for fast etching of a silicon wafer to form the SNA electrode. A thin gold shell is then coated onto each silicon nanowire by sputtering. Potassium ferricyanide, glucose oxidase, and a Nafion thin film were then sequentially coated onto the fabricated 3D SNA for glucose detection. The effective sensing area of the fabricated 3D SNA electrode was measured to be 11.35 folds that of the corresponding plane electrode by steady-state voltammetry. Actual glucose detections illustrated that the SNA based devices could function at a sensitivity of 1,034 μA mM-1 cm-2 with a linear detection range from 55.1 μM-11.0 mM and detection limit of 11 μM. A fast response time of 2 s was also demonstrated. The proposed 3D SNA based glucose biosensing scheme possesses advantages of low cost, high sensitivity, and fast response.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129867730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056695
D. A. Saab, P. Basset, F. Marty, D. Angelescu, M. Trawick
We present an accurate 3D reconstruction method for silicon micro/nanostructures with high aspect ratio, that was developed and implemented using a dual beam (Focused ion beam and scanning electron microscopy (FIB-SEM)) tomography. Black Silicon (BSi) samples were processed by alternating steps of FIB etching and SEM imaging, that allow obtaining sequential cross section images of the sample, including micro/nano-scale details. After performing a series of image data processing steps, 3D models of BSi surfaces are obtained. Comparison with SEM micrographs recorded prior to the etching yields striking resemblance, down to the nanometer-scale details of the structure. This method allows accurate determination of the topography even for very high aspect ratio structures, where competing non-destructive 3D reconstruction techniques based on SEM pixel intensity are limited by the SEM dynamical range. The resulting 3D models allow us to perform accurate simulations of black silicon's optical properties, and calculate topographic parameters, such as height distribution, average ratio and obtain exact figures for the total surface area enhancement. The imaging techniques we have developed allow us to confirm that our BSi samples consist of a bottom-up auto generated pattern and not the result of micro-masking.
{"title":"Accurate 3D reconstruction of silicon micro/nanostructures, based on high resolution FIB-SEM tomography: Application to Black Silicon","authors":"D. A. Saab, P. Basset, F. Marty, D. Angelescu, M. Trawick","doi":"10.1109/DTIP.2014.7056695","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056695","url":null,"abstract":"We present an accurate 3D reconstruction method for silicon micro/nanostructures with high aspect ratio, that was developed and implemented using a dual beam (Focused ion beam and scanning electron microscopy (FIB-SEM)) tomography. Black Silicon (BSi) samples were processed by alternating steps of FIB etching and SEM imaging, that allow obtaining sequential cross section images of the sample, including micro/nano-scale details. After performing a series of image data processing steps, 3D models of BSi surfaces are obtained. Comparison with SEM micrographs recorded prior to the etching yields striking resemblance, down to the nanometer-scale details of the structure. This method allows accurate determination of the topography even for very high aspect ratio structures, where competing non-destructive 3D reconstruction techniques based on SEM pixel intensity are limited by the SEM dynamical range. The resulting 3D models allow us to perform accurate simulations of black silicon's optical properties, and calculate topographic parameters, such as height distribution, average ratio and obtain exact figures for the total surface area enhancement. The imaging techniques we have developed allow us to confirm that our BSi samples consist of a bottom-up auto generated pattern and not the result of micro-masking.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122078358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056683
R. Lévy, G. Papin, O. Le Traon, D. Janiaud, J. Guerard
The Vibrating Beam Accelerometer (VBA) consists in a vibrating micro beam anchored on one side and linked to a proof mass on the other side. The beam is maintained at resonance by means of an oscillator circuit, and when the proof mass is submitted to acceleration, compressive or tensile stresses are applied on the vibrating beam modifying its resonance frequency. The output of the accelerometer is a frequency measurement, its resolution is determined by the phase noise integrated over the sensor bandwidth, and its bias stability is determined by the close to carrier phase noise or frequency stability. If the beam resonator is actuated with increased force amplitude high enough to operate in the nonlinear region, far from carrier phase noise is decreased improving the sensor resolution while the close to carrier phase noise is increased deteriorating the resolution and bias stability. For inertial applications, the acceleration measurement is twice integrated to calculate the position, and as a consequence the bias stability is crucial. The bias stability is deteriorated when the beam resonator operates in the nonlinear region, this is the reason why VBAs work in the linear region for inertial applications. Concerning seismic ground sensor applications the bias stability is not considered and the important parameter is the resolution at the bandwidth determined by the frequency of the seismic waves. In this case it is then better to operate the beam resonator in the nonlinear region to improve the sensor resolution. Previous work have presented a behavioral model of the vibrating beam accelerometer including the beam resonator and the oscillator circuit taking into account the nonlinear terms. The transient and phase noise simulations are presented to show the improvement of the far from carrier phase noise and the degradation of the close to carrier phase noise while increasing the vibration amplitude in nonlinear region. These simulations are then compared to experimental measurements of the VIA vibrating beam accelerometer developed at ONERA. Finally these accelerometer noise is calculated from the phase noise simulations and the accelerometer resolution is optimized.
{"title":"A high resolution vibrating beam accelerometer working in nonlinear region for seismic ground sensor application","authors":"R. Lévy, G. Papin, O. Le Traon, D. Janiaud, J. Guerard","doi":"10.1109/DTIP.2014.7056683","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056683","url":null,"abstract":"The Vibrating Beam Accelerometer (VBA) consists in a vibrating micro beam anchored on one side and linked to a proof mass on the other side. The beam is maintained at resonance by means of an oscillator circuit, and when the proof mass is submitted to acceleration, compressive or tensile stresses are applied on the vibrating beam modifying its resonance frequency. The output of the accelerometer is a frequency measurement, its resolution is determined by the phase noise integrated over the sensor bandwidth, and its bias stability is determined by the close to carrier phase noise or frequency stability. If the beam resonator is actuated with increased force amplitude high enough to operate in the nonlinear region, far from carrier phase noise is decreased improving the sensor resolution while the close to carrier phase noise is increased deteriorating the resolution and bias stability. For inertial applications, the acceleration measurement is twice integrated to calculate the position, and as a consequence the bias stability is crucial. The bias stability is deteriorated when the beam resonator operates in the nonlinear region, this is the reason why VBAs work in the linear region for inertial applications. Concerning seismic ground sensor applications the bias stability is not considered and the important parameter is the resolution at the bandwidth determined by the frequency of the seismic waves. In this case it is then better to operate the beam resonator in the nonlinear region to improve the sensor resolution. Previous work have presented a behavioral model of the vibrating beam accelerometer including the beam resonator and the oscillator circuit taking into account the nonlinear terms. The transient and phase noise simulations are presented to show the improvement of the far from carrier phase noise and the degradation of the close to carrier phase noise while increasing the vibration amplitude in nonlinear region. These simulations are then compared to experimental measurements of the VIA vibrating beam accelerometer developed at ONERA. Finally these accelerometer noise is calculated from the phase noise simulations and the accelerometer resolution is optimized.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129143556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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