Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056695
D. A. Saab, P. Basset, F. Marty, D. Angelescu, M. Trawick
We present an accurate 3D reconstruction method for silicon micro/nanostructures with high aspect ratio, that was developed and implemented using a dual beam (Focused ion beam and scanning electron microscopy (FIB-SEM)) tomography. Black Silicon (BSi) samples were processed by alternating steps of FIB etching and SEM imaging, that allow obtaining sequential cross section images of the sample, including micro/nano-scale details. After performing a series of image data processing steps, 3D models of BSi surfaces are obtained. Comparison with SEM micrographs recorded prior to the etching yields striking resemblance, down to the nanometer-scale details of the structure. This method allows accurate determination of the topography even for very high aspect ratio structures, where competing non-destructive 3D reconstruction techniques based on SEM pixel intensity are limited by the SEM dynamical range. The resulting 3D models allow us to perform accurate simulations of black silicon's optical properties, and calculate topographic parameters, such as height distribution, average ratio and obtain exact figures for the total surface area enhancement. The imaging techniques we have developed allow us to confirm that our BSi samples consist of a bottom-up auto generated pattern and not the result of micro-masking.
{"title":"Accurate 3D reconstruction of silicon micro/nanostructures, based on high resolution FIB-SEM tomography: Application to Black Silicon","authors":"D. A. Saab, P. Basset, F. Marty, D. Angelescu, M. Trawick","doi":"10.1109/DTIP.2014.7056695","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056695","url":null,"abstract":"We present an accurate 3D reconstruction method for silicon micro/nanostructures with high aspect ratio, that was developed and implemented using a dual beam (Focused ion beam and scanning electron microscopy (FIB-SEM)) tomography. Black Silicon (BSi) samples were processed by alternating steps of FIB etching and SEM imaging, that allow obtaining sequential cross section images of the sample, including micro/nano-scale details. After performing a series of image data processing steps, 3D models of BSi surfaces are obtained. Comparison with SEM micrographs recorded prior to the etching yields striking resemblance, down to the nanometer-scale details of the structure. This method allows accurate determination of the topography even for very high aspect ratio structures, where competing non-destructive 3D reconstruction techniques based on SEM pixel intensity are limited by the SEM dynamical range. The resulting 3D models allow us to perform accurate simulations of black silicon's optical properties, and calculate topographic parameters, such as height distribution, average ratio and obtain exact figures for the total surface area enhancement. The imaging techniques we have developed allow us to confirm that our BSi samples consist of a bottom-up auto generated pattern and not the result of micro-masking.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122078358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056676
J. Nebhen, E. Savary, W. Rahajandraibe, C. Dufaza, S. Meillére, E. Kussener, H. Barthélemy, J. Czarny, H. Lhermet
Investigation of readout electronic dedicated to electromechanical audio sensor is presented. The circuit is able of reading piezoresistive gauge implemented with silicon nanowire (NEMS) and bring electromechanical signal to high-resolution digital output. Low-noise low-power CMOS operational transconductance amplifier (OTA) is presented. The low-noise amplifier (LNA) has been designed in a 0.28 μm CMOS process with a 2.5 V supply voltage and occupies an area of 120 × 160 μm2. For the Post-layout Simulation, the OTA achieves a 65 dB DC gain. It achieves a noise floor of 6 nV/√Hz within the frequency range from 1 Hz to 10 kHz. The total power consumption including the common mode feedback circuit (CMFB) and the biasing circuit is 150 μW.
{"title":"Low-noise CMOS amplifier for readout electronic of resistive NEMS audio sensor","authors":"J. Nebhen, E. Savary, W. Rahajandraibe, C. Dufaza, S. Meillére, E. Kussener, H. Barthélemy, J. Czarny, H. Lhermet","doi":"10.1109/DTIP.2014.7056676","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056676","url":null,"abstract":"Investigation of readout electronic dedicated to electromechanical audio sensor is presented. The circuit is able of reading piezoresistive gauge implemented with silicon nanowire (NEMS) and bring electromechanical signal to high-resolution digital output. Low-noise low-power CMOS operational transconductance amplifier (OTA) is presented. The low-noise amplifier (LNA) has been designed in a 0.28 μm CMOS process with a 2.5 V supply voltage and occupies an area of 120 × 160 μm2. For the Post-layout Simulation, the OTA achieves a 65 dB DC gain. It achieves a noise floor of 6 nV/√Hz within the frequency range from 1 Hz to 10 kHz. The total power consumption including the common mode feedback circuit (CMFB) and the biasing circuit is 150 μW.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133780140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056697
M. Maroufi, M. Shamshirsaz
Resonant Piezoelectric-excited Millimeter-sized Cantilevers (PEMC), has attracted many researchers' interests in the applications such as liquid level and density sensing. As in these applications, the PEMC are partially immersed in liquid, an appropriate analytical model is needed to predict the dynamic behavior of these devices. In this work, a PEMC has been designed and fabricated for liquid level sensing. An analytical model is developed and applied to evaluate the behavior of this device with respect to different tip immersion depths. To validate the proposed model, the theoretical results are compared with the experimental results for the tip immersion depths varying from 5 mm to 15 mm in water for two different resonant modes. A slight deviation between theoretical and experimental model have been observed. To justify the deviations, uncertain parameters and also hydrodynamic force's correction factor have been considered in modeling. This correction factor is introduced in theoretical modeling order to achieve a better estimation of the effect of immersion depth variation on the hydrodynamic force. To determine these parameters using experimental results, Particle Swarm Optimization (PSO) method is utilized. Applying this method, the deviation of theoretical results from experimental data is being significantly reduced. The results show that the uncertain parameters have negligible effect on the natural frequency shift of the PEMC in different immersion depths and on the contrary the hydrodynamic force's correction factor affects it drastically. It is concluded that to improve resonant behavior modeling of the PEMC partially immersed in liquid, for different immersion depths, an appropriate estimation of liquid force is required by insertion of hydrodynamic correction factor.
{"title":"Resonant behavior study of PZT sensor in liquid using PSO method","authors":"M. Maroufi, M. Shamshirsaz","doi":"10.1109/DTIP.2014.7056697","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056697","url":null,"abstract":"Resonant Piezoelectric-excited Millimeter-sized Cantilevers (PEMC), has attracted many researchers' interests in the applications such as liquid level and density sensing. As in these applications, the PEMC are partially immersed in liquid, an appropriate analytical model is needed to predict the dynamic behavior of these devices. In this work, a PEMC has been designed and fabricated for liquid level sensing. An analytical model is developed and applied to evaluate the behavior of this device with respect to different tip immersion depths. To validate the proposed model, the theoretical results are compared with the experimental results for the tip immersion depths varying from 5 mm to 15 mm in water for two different resonant modes. A slight deviation between theoretical and experimental model have been observed. To justify the deviations, uncertain parameters and also hydrodynamic force's correction factor have been considered in modeling. This correction factor is introduced in theoretical modeling order to achieve a better estimation of the effect of immersion depth variation on the hydrodynamic force. To determine these parameters using experimental results, Particle Swarm Optimization (PSO) method is utilized. Applying this method, the deviation of theoretical results from experimental data is being significantly reduced. The results show that the uncertain parameters have negligible effect on the natural frequency shift of the PEMC in different immersion depths and on the contrary the hydrodynamic force's correction factor affects it drastically. It is concluded that to improve resonant behavior modeling of the PEMC partially immersed in liquid, for different immersion depths, an appropriate estimation of liquid force is required by insertion of hydrodynamic correction factor.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133701470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056660
Wen-Chao Feng, Che-wei Hsu, Hsi-Chien Liu, Gou-Jen Wang
In this study, a novel glucose biosensor based on a 3D silicon nanowire array (SNA) electrode was proposed. Metal-assisted etching (MAE) method using an AgNO3 and HF mixing solution as the etchant is employed for fast etching of a silicon wafer to form the SNA electrode. A thin gold shell is then coated onto each silicon nanowire by sputtering. Potassium ferricyanide, glucose oxidase, and a Nafion thin film were then sequentially coated onto the fabricated 3D SNA for glucose detection. The effective sensing area of the fabricated 3D SNA electrode was measured to be 11.35 folds that of the corresponding plane electrode by steady-state voltammetry. Actual glucose detections illustrated that the SNA based devices could function at a sensitivity of 1,034 μA mM-1 cm-2 with a linear detection range from 55.1 μM-11.0 mM and detection limit of 11 μM. A fast response time of 2 s was also demonstrated. The proposed 3D SNA based glucose biosensing scheme possesses advantages of low cost, high sensitivity, and fast response.
{"title":"A cost effective and highly sensitive glucose biosensor based on a 3D silicon nano wire array electrode","authors":"Wen-Chao Feng, Che-wei Hsu, Hsi-Chien Liu, Gou-Jen Wang","doi":"10.1109/DTIP.2014.7056660","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056660","url":null,"abstract":"In this study, a novel glucose biosensor based on a 3D silicon nanowire array (SNA) electrode was proposed. Metal-assisted etching (MAE) method using an AgNO3 and HF mixing solution as the etchant is employed for fast etching of a silicon wafer to form the SNA electrode. A thin gold shell is then coated onto each silicon nanowire by sputtering. Potassium ferricyanide, glucose oxidase, and a Nafion thin film were then sequentially coated onto the fabricated 3D SNA for glucose detection. The effective sensing area of the fabricated 3D SNA electrode was measured to be 11.35 folds that of the corresponding plane electrode by steady-state voltammetry. Actual glucose detections illustrated that the SNA based devices could function at a sensitivity of 1,034 μA mM-1 cm-2 with a linear detection range from 55.1 μM-11.0 mM and detection limit of 11 μM. A fast response time of 2 s was also demonstrated. The proposed 3D SNA based glucose biosensing scheme possesses advantages of low cost, high sensitivity, and fast response.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129867730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056674
J. Juillard
This paper is dedicated to the comparison of three techniques of reduced-order modeling (ROM) that may be applied to MEMS beams subject to nonlinear damping and restoring forces. These methods are compared in terms of simplicity and accuracy, in the static, transient and steady-state regimes. It is shown that one of the most popular ROM methods may lead to dramatically wrong results in the case of single-mode decomposition.
{"title":"A comparative study of reduced-order modeling techniques for nonlinear MEMS beams","authors":"J. Juillard","doi":"10.1109/DTIP.2014.7056674","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056674","url":null,"abstract":"This paper is dedicated to the comparison of three techniques of reduced-order modeling (ROM) that may be applied to MEMS beams subject to nonlinear damping and restoring forces. These methods are compared in terms of simplicity and accuracy, in the static, transient and steady-state regimes. It is shown that one of the most popular ROM methods may lead to dramatically wrong results in the case of single-mode decomposition.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114412744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056651
Sae-Won Lee, Ying Chen, R. Vaughan, Meenakshinathan Parameswaran Ash, D. Titz, F. Ferrero, C. Luxey, A. Mahanfar
A novel micro-electro-mechanical systems (MEMS) fabrication process is developed to create self-assembled on-chip high efficiency antennas. A self-assembly technique is used to create out-of-plane on-chip antennas with excellent radiation efficiency on low resistivity substrates. This paper discusses on the fabrication of a monopole antenna and the measurement of the antenna's radiation pattern characteristics. To achieve improved isolation and reduced loss, a thick dielectric layer was placed under the antennas and the transmission lines. The measurement shows maximum realized gain of -2.5 dBi at 66 GHz.
{"title":"Polymer MEMS fabrication process for system-on-chip self-assembled millimeter-wave antennas","authors":"Sae-Won Lee, Ying Chen, R. Vaughan, Meenakshinathan Parameswaran Ash, D. Titz, F. Ferrero, C. Luxey, A. Mahanfar","doi":"10.1109/DTIP.2014.7056651","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056651","url":null,"abstract":"A novel micro-electro-mechanical systems (MEMS) fabrication process is developed to create self-assembled on-chip high efficiency antennas. A self-assembly technique is used to create out-of-plane on-chip antennas with excellent radiation efficiency on low resistivity substrates. This paper discusses on the fabrication of a monopole antenna and the measurement of the antenna's radiation pattern characteristics. To achieve improved isolation and reduced loss, a thick dielectric layer was placed under the antennas and the transmission lines. The measurement shows maximum realized gain of -2.5 dBi at 66 GHz.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129414566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056680
A. Somà, G. De Pasquale, M. M. Saleem
The study of creep in MEMS is crucial for their lifetime prediction and reliability evaluation. The experimental approaches used in macromechanics can be extended to the microscale if their effectiveness is proved by dedicated experiments. This goal may provide more general validity of creep effects prediction in MEMS, instead of spotted experiments on single devices like those ones reported in most of the work presented in literature. The demonstration of the validity of some established creep models and experimental methodologies also in the micromechanics is the goal of this paper.
{"title":"Creep in MEMS","authors":"A. Somà, G. De Pasquale, M. M. Saleem","doi":"10.1109/DTIP.2014.7056680","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056680","url":null,"abstract":"The study of creep in MEMS is crucial for their lifetime prediction and reliability evaluation. The experimental approaches used in macromechanics can be extended to the microscale if their effectiveness is proved by dedicated experiments. This goal may provide more general validity of creep effects prediction in MEMS, instead of spotted experiments on single devices like those ones reported in most of the work presented in literature. The demonstration of the validity of some established creep models and experimental methodologies also in the micromechanics is the goal of this paper.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121809299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056693
D. A. Saab, S. Mostarshedi, P. Basset, D. Angelescu, E. Richalot
In the present paper, the reduced spectral reflectance properties of silicon micro/nanostructures are studied. In the aim of implementing a predictive reflectance simulation model based on surface topography, an alternative design method of an equivalent unit cell is proposed, where the dimensions and shape are determined based on statistical parameters of the sample topography. A good concordance is reported when comparing reflectance simulations of the equivalent unit cell structure with measurements on Black Silicon (BSi) samples performed with an integrating sphere.
{"title":"Optical properties characterization of silicon micro/nanostructures: Towards a predictive reflectance simulation model based on surface topography","authors":"D. A. Saab, S. Mostarshedi, P. Basset, D. Angelescu, E. Richalot","doi":"10.1109/DTIP.2014.7056693","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056693","url":null,"abstract":"In the present paper, the reduced spectral reflectance properties of silicon micro/nanostructures are studied. In the aim of implementing a predictive reflectance simulation model based on surface topography, an alternative design method of an equivalent unit cell is proposed, where the dimensions and shape are determined based on statistical parameters of the sample topography. A good concordance is reported when comparing reflectance simulations of the equivalent unit cell structure with measurements on Black Silicon (BSi) samples performed with an integrating sphere.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125634763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056632
J. Brueckner, E. Auerswald, R. Dudek, B. Wunderle, B. Michel, S. Rzepka, A. Dehé
The strength of poly-silicon membranes was investigated by experimental tests and numerical simulations. A new fracture test has been developed that replicates the loading situation under real service conditions well but with higher stress level. A set of 45 membranes was tested at each of the three positions on the wafer in order to assure statistical accuracy and to evaluate the strength distribution across the wafer. Using finite element simulation, fracture stresses were calculated and analyzed by means of a two-parametric Weibull distribution subsequently. High values were found for the characteristic fracture stresses. They are in the range of 5,400-6,000 MPa.
{"title":"Statistical strength investigation of poly-silicon membranes using microscopic loading tests and numerical simulation","authors":"J. Brueckner, E. Auerswald, R. Dudek, B. Wunderle, B. Michel, S. Rzepka, A. Dehé","doi":"10.1109/DTIP.2014.7056632","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056632","url":null,"abstract":"The strength of poly-silicon membranes was investigated by experimental tests and numerical simulations. A new fracture test has been developed that replicates the loading situation under real service conditions well but with higher stress level. A set of 45 membranes was tested at each of the three positions on the wafer in order to assure statistical accuracy and to evaluate the strength distribution across the wafer. Using finite element simulation, fracture stresses were calculated and analyzed by means of a two-parametric Weibull distribution subsequently. High values were found for the characteristic fracture stresses. They are in the range of 5,400-6,000 MPa.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126521751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056663
Alessia Di Pancrazio, P. Bruschi, M. Piotto
A flow sensor based on a differential microcalorimeter integrated onto a silicon chip is presented. A tunable readout interface, capable of compensating for the sensor offset and offset drift, is integrated on the same chip as the sensing structures. The liquid flow is conveyed to the sensing structure by means of a proper package provided of micro-channels. A simple technique is used to deposit a silicone film onto the flow channel walls, including the chip surface exposed to the liquid. In this way electrical insulation between the sensing chip and the liquid flow is obtained. Results of test performed in deionized water flow are presented.
{"title":"Low power, MEMS liquid flow sensor with silicone coating electrical insulation","authors":"Alessia Di Pancrazio, P. Bruschi, M. Piotto","doi":"10.1109/DTIP.2014.7056663","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056663","url":null,"abstract":"A flow sensor based on a differential microcalorimeter integrated onto a silicon chip is presented. A tunable readout interface, capable of compensating for the sensor offset and offset drift, is integrated on the same chip as the sensing structures. The liquid flow is conveyed to the sensing structure by means of a proper package provided of micro-channels. A simple technique is used to deposit a silicone film onto the flow channel walls, including the chip surface exposed to the liquid. In this way electrical insulation between the sensing chip and the liquid flow is obtained. Results of test performed in deionized water flow are presented.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123726672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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