{"title":"Conjugated Polymers for Electronic, Opto-Electronic and All Optical Device Applications:","authors":"D. Bradley","doi":"10.1109/DRC.1991.664661","DOIUrl":"https://doi.org/10.1109/DRC.1991.664661","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120936454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Best Structures for Deep Submicron (0.1-0.3/spl mu/m) Mos Devices","authors":"A. Tasch","doi":"10.1109/DRC.1991.664660","DOIUrl":"https://doi.org/10.1109/DRC.1991.664660","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131637065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Experimental and theoretical results are presented on microwave shot noise in high-speed double-barrier resonant tunneling diodes (RTDs). It is found that the room-temperature shot noise per unit current can be more than a factor of two lower than in single-barrier structures (e.g. p-n junctions) when the RTD is biased into the positive differential resistance (PDR) region below the current peak, but that it is increased when biased into the negative differential resistance (NDR) region. The analysis suggests that the reduced shot noise could also be obtained in other double-barrier resonant-tunneling devices that operate in the PDR region, such as resonant-tunneling transistors and the quantum-well injection and transit time oscillator. >
{"title":"Low Shot Noise in High-Speed Resonant-tunneling diodes","authors":"E. Brown, C. Parker, A. Calawa, M. Manfra","doi":"10.1109/DRC.1991.664719","DOIUrl":"https://doi.org/10.1109/DRC.1991.664719","url":null,"abstract":"Summary form only given. Experimental and theoretical results are presented on microwave shot noise in high-speed double-barrier resonant tunneling diodes (RTDs). It is found that the room-temperature shot noise per unit current can be more than a factor of two lower than in single-barrier structures (e.g. p-n junctions) when the RTD is biased into the positive differential resistance (PDR) region below the current peak, but that it is increased when biased into the negative differential resistance (NDR) region. The analysis suggests that the reduced shot noise could also be obtained in other double-barrier resonant-tunneling devices that operate in the PDR region, such as resonant-tunneling transistors and the quantum-well injection and transit time oscillator. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133154803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Deppe, C. Lei, William David Lee, T. Rogers, J. Campbell, B. Streetman
Summary form only given. Low-threshold (2-4-mA) quantum-well vertical-cavity surface-emitting lasers with high output powers (>1 mW) have been achieved. These lasers exhibit bistability at the onset of lasing. Switching between the on and off states can be achieved optically with optical signal levels as low as 200 mu W. Arrays of these lasers have the potential for all-optical memories and optical logic elements. >
{"title":"Bistability and Optical Switching in an Aias-Gaas-Ingaas Vertical-Cavity Surface-emitting Laser","authors":"D. Deppe, C. Lei, William David Lee, T. Rogers, J. Campbell, B. Streetman","doi":"10.1109/DRC.1991.664685","DOIUrl":"https://doi.org/10.1109/DRC.1991.664685","url":null,"abstract":"Summary form only given. Low-threshold (2-4-mA) quantum-well vertical-cavity surface-emitting lasers with high output powers (>1 mW) have been achieved. These lasers exhibit bistability at the onset of lasing. Switching between the on and off states can be achieved optically with optical signal levels as low as 200 mu W. Arrays of these lasers have the potential for all-optical memories and optical logic elements. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130226665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. As the display size increases, and as the resolution gets higher, the gate-line delay problem and the yield of the panel becomes more important. Double-layered gate insulators such as Ta/sub 2/O/sub 5//SiN or Al/sub 2/O/sub 3//SiN have been proposed and used in products. The Al-gate TFT (thin-film transistor) reduces gate-line delay and enhances production yield. With this Al-gate TFT, conventional design rules can achieve a diagonal size of over 30 in and resolution of over 1 Mpixel. >
{"title":"Status of Tft/lcd Flat Panel Display","authors":"T. Tsukada","doi":"10.1109/DRC.1991.664662","DOIUrl":"https://doi.org/10.1109/DRC.1991.664662","url":null,"abstract":"Summary form only given. As the display size increases, and as the resolution gets higher, the gate-line delay problem and the yield of the panel becomes more important. Double-layered gate insulators such as Ta/sub 2/O/sub 5//SiN or Al/sub 2/O/sub 3//SiN have been proposed and used in products. The Al-gate TFT (thin-film transistor) reduces gate-line delay and enhances production yield. With this Al-gate TFT, conventional design rules can achieve a diagonal size of over 30 in and resolution of over 1 Mpixel. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122063745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on
{"title":"Molecular Beam Epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As Heterojunction Bipolar Transistor on","authors":"W. Li, P. Bhattacharya","doi":"10.1109/DRC.1991.664722","DOIUrl":"https://doi.org/10.1109/DRC.1991.664722","url":null,"abstract":"Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122218745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. A 1920*1080 element deformable mirror device (DMD) for the development of a high-definition display (HDD) is discussed. This chip is capable of projecting fixed patterns in full color at a 60-Hz frame rate. A DMD is a reflective spatial light modulator (SLM) which consists of an array of electrostatically addressed micromechanical mirrors fabricated monolithically with the address circuitry. A three-color, 128-level (7-b) gray-scale video projection display based upon the DMD is also discussed. >
{"title":"A 1920 X 1080 Element Deformable Mirror Device for High Definition Displays","authors":"R. M. Boysel","doi":"10.1109/DRC.1991.664716","DOIUrl":"https://doi.org/10.1109/DRC.1991.664716","url":null,"abstract":"Summary form only given. A 1920*1080 element deformable mirror device (DMD) for the development of a high-definition display (HDD) is discussed. This chip is capable of projecting fixed patterns in full color at a 60-Hz frame rate. A DMD is a reflective spatial light modulator (SLM) which consists of an array of electrostatically addressed micromechanical mirrors fabricated monolithically with the address circuitry. A three-color, 128-level (7-b) gray-scale video projection display based upon the DMD is also discussed. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"34 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125718965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Stanchina, R. A. Metzger, T. Liu, P. F. Lou, J. Jensen, M. W. Pierce, L. McCray
{"title":"60 Ghz A l InAs/gainas/inp Dhbts Grown by Movpe+mbe","authors":"W. Stanchina, R. A. Metzger, T. Liu, P. F. Lou, J. Jensen, M. W. Pierce, L. McCray","doi":"10.1109/DRC.1991.664726","DOIUrl":"https://doi.org/10.1109/DRC.1991.664726","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125237711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45 degrees dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-AA In/sub 0.2/Ga/sub 0.8/As/100-AA GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-AA GaAs/830-AA AlAs), which serves as a distributed Bragg reflector ( approximately 99%) after 45 degrees angle etching. >
{"title":"Low-threshold Ingas/gaas Strained-layer Surface Emitting Lasers With Two 45/spl deg/ Angle Etched Total Reflection Mirrors","authors":"C. Chao, K. Law, J. Merz","doi":"10.1109/DRC.1991.664667","DOIUrl":"https://doi.org/10.1109/DRC.1991.664667","url":null,"abstract":"Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45 degrees dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-AA In/sub 0.2/Ga/sub 0.8/As/100-AA GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-AA GaAs/830-AA AlAs), which serves as a distributed Bragg reflector ( approximately 99%) after 45 degrees angle etching. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114858129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Woodall, A. C. Warren, D.T. Mclnturff, J. Burroughes, R. Hodgson, M. Melloch
Most commercial optical receivers are hybrid circuits of silicon based electronics and Ge or GaInAsP based photonics. Discusses the technology and applications supported by GaAs in optical communications and electronics.
{"title":"GaAs Sses the light","authors":"J. Woodall, A. C. Warren, D.T. Mclnturff, J. Burroughes, R. Hodgson, M. Melloch","doi":"10.1109/DRC.1991.664705","DOIUrl":"https://doi.org/10.1109/DRC.1991.664705","url":null,"abstract":"Most commercial optical receivers are hybrid circuits of silicon based electronics and Ge or GaInAsP based photonics. Discusses the technology and applications supported by GaAs in optical communications and electronics.","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130193713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：