Summary form only given. An attempt was made to improve the ruggedness of a VDMOS through design and process innovation. To this end, a 10-A VDMOS with breakdown voltage in excess of 60 V was fabricated, tested, and compared with other devices. The VDMOS fabricated showed much higher power dissipation capability and superior ruggedness when compared with other devices available in the industry. Experimental data show that the high J/sub peak/ capability makes this VDMOS more reliable as a high-current power device and extends the safe operating range. >
{"title":"Improved Ruggedness of a High Current Vertical Power Dmos","authors":"M.J. Kim, Sayan Mukherjee, J. C. Young","doi":"10.1109/DRC.1991.664675","DOIUrl":"https://doi.org/10.1109/DRC.1991.664675","url":null,"abstract":"Summary form only given. An attempt was made to improve the ruggedness of a VDMOS through design and process innovation. To this end, a 10-A VDMOS with breakdown voltage in excess of 60 V was fabricated, tested, and compared with other devices. The VDMOS fabricated showed much higher power dissipation capability and superior ruggedness when compared with other devices available in the industry. Experimental data show that the high J/sub peak/ capability makes this VDMOS more reliable as a high-current power device and extends the safe operating range. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124955296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Kasukawa, R. Bhat, C. Zah, M. Koza, S. Schwarz, T. Lee
Summary form only given. The authors report 1.5 mu m GaInAs/AlGaInAs GRIN-SCH SL (strained layer) QW (quantum well) LDs (laser diodes) having both compressive and tensile strain in the well. They were grown by low-pressure organometallic chemical vapor deposition (OMCVD). Very low threshold current densities of 200 and 400 A/cm/sup 2/ were obtained in tensile and compressive SL QW LDs, respectively. The characteristic temperatures were 60 K for a lattice-matched QW LD, 72 K for a compressive SL QW LD, and 50 K for a tensile SL QW LD. Lasing wavelengths were in the 1.5 mu m range for all cases. >
{"title":"200 A/cm/sup 2/ Threshold Current Density 1.5/spl mu/m Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd","authors":"A. Kasukawa, R. Bhat, C. Zah, M. Koza, S. Schwarz, T. Lee","doi":"10.1109/DRC.1991.664666","DOIUrl":"https://doi.org/10.1109/DRC.1991.664666","url":null,"abstract":"Summary form only given. The authors report 1.5 mu m GaInAs/AlGaInAs GRIN-SCH SL (strained layer) QW (quantum well) LDs (laser diodes) having both compressive and tensile strain in the well. They were grown by low-pressure organometallic chemical vapor deposition (OMCVD). Very low threshold current densities of 200 and 400 A/cm/sup 2/ were obtained in tensile and compressive SL QW LDs, respectively. The characteristic temperatures were 60 K for a lattice-matched QW LD, 72 K for a compressive SL QW LD, and 50 K for a tensile SL QW LD. Lasing wavelengths were in the 1.5 mu m range for all cases. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129802531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. In order to improve the switching-off speed of a photonic gate array consisting of a multiple-quantum-well (MQW) modulator, a distributed Bragg reflector (DBR), and a heterojunction phototransistor (HPT), a resistor structure connected in parallel with the modulator is proposed. The bandwidth was measured as a function of the optical gain for the following two gate structures: the MQW reflection modulator connected with (1) the p-i-n photodiode in series; and (2) the HPT in series and the resistor in parallel, respectively. The results show that the addition of the resistor can reverse the increase in switching-off time due to the Miller capacitance effect with optical gain. Estimates indicate that optimizing the device size and structure will result in subnanosecond switching times with several times the optical gain. >
{"title":"Dynamic Characteristics of Photonic Gate with Multiple-Quantum-Well Reflection Modulator and Heterojunction Phototransistor","authors":"S. Matsuo, C. Amano, T. Kurokawa","doi":"10.1109/DRC.1991.664700","DOIUrl":"https://doi.org/10.1109/DRC.1991.664700","url":null,"abstract":"Summary form only given. In order to improve the switching-off speed of a photonic gate array consisting of a multiple-quantum-well (MQW) modulator, a distributed Bragg reflector (DBR), and a heterojunction phototransistor (HPT), a resistor structure connected in parallel with the modulator is proposed. The bandwidth was measured as a function of the optical gain for the following two gate structures: the MQW reflection modulator connected with (1) the p-i-n photodiode in series; and (2) the HPT in series and the resistor in parallel, respectively. The results show that the addition of the resistor can reverse the increase in switching-off time due to the Miller capacitance effect with optical gain. Estimates indicate that optimizing the device size and structure will result in subnanosecond switching times with several times the optical gain. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121075453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low threshold current and moderate blue-shift of the lasing wavelength. The strained InGaAs-QW material employed was grown by MOCVD. The fabrication process is described. The authors believe that IID by Si diffusion is a very attractive approach for the fabrication of strained InGaAs-QW lasers. >
{"title":"Strained Ingaas-gaas Quantum Well Lasers By Impurity-induced Disordering With Very Low Threshold and Moderate Blue-shift","authors":"W. Zou, J. Merz, L. Coldren, R. Fu, C. Hong","doi":"10.1109/DRC.1991.664669","DOIUrl":"https://doi.org/10.1109/DRC.1991.664669","url":null,"abstract":"Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low threshold current and moderate blue-shift of the lasing wavelength. The strained InGaAs-QW material employed was grown by MOCVD. The fabrication process is described. The authors believe that IID by Si diffusion is a very attractive approach for the fabrication of strained InGaAs-QW lasers. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125275699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"All-Electrical Laser Diode Characterization by Monolithic Integration with a Photodiode","authors":"A. Chu, Y. Gigase, B. Zeghbroeck","doi":"10.1109/drc.1991.664687","DOIUrl":"https://doi.org/10.1109/drc.1991.664687","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128219081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Vertically-Integrated Gaas Bipolar Dram Cell","authors":"T. Stellwag, J. Cooper, M. Melloch","doi":"10.1109/DRC.1991.664695","DOIUrl":"https://doi.org/10.1109/DRC.1991.664695","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131595125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Molecular Beam Epitaxy Grown PbSnTe Buried Quantum Well Diode Lasers with PbEuSeTe Confinement Layers","authors":"Z. Feit, D. Kostyk, R. Woods, P. Mak","doi":"10.1109/drc.1991.664672","DOIUrl":"https://doi.org/10.1109/drc.1991.664672","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127306283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N/sub 2/O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide. >
{"title":"Electrical and Reliability Characteristics of Submicron Nmosfet's with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O","authors":"H. Hwang, W. Ting, D. Kwong, Jack C. Lee","doi":"10.1109/DRC.1991.664712","DOIUrl":"https://doi.org/10.1109/DRC.1991.664712","url":null,"abstract":"Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N/sub 2/O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116604214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Ono, J. Beall, M. Cromar, T. Harvey, M. Johansson, C. Reintsema, D. Rudman
{"title":"rf Response of High-T/sub c/ Sns Josephson Microbridges Suitable for Integrated Circuit Applications","authors":"R. Ono, J. Beall, M. Cromar, T. Harvey, M. Johansson, C. Reintsema, D. Rudman","doi":"10.1109/DRC.1991.664720","DOIUrl":"https://doi.org/10.1109/DRC.1991.664720","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131073148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effects of Substrate Tilting in Substantial Improvement of Dc Performance of Aigaas/gaas Npn Dhbt's Grown by Mbe","authors":"N. Chand, Paul R. Berger, N. Dutta","doi":"10.1109/drc.1991.664721","DOIUrl":"https://doi.org/10.1109/drc.1991.664721","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123419001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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