Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >
{"title":"Delta-Doped Sagm-Avalanche Photodiodes","authors":"R. Kuchibhotla, J. Campbell, C. Tsai, W. Tsang","doi":"10.1109/DRC.1991.664699","DOIUrl":"https://doi.org/10.1109/DRC.1991.664699","url":null,"abstract":"Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127110624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Wolffenbuttel, E. Blaauw, M. R. Wolffenbuttel, G. de Graaf
Summary form only given. A technique is described that has been developed and implemented in silicon to independently program the long- and the short-wavelength response of a photodiode in order to have a tri-colorimetric response using only one diode without dyed filters by switching between reverse voltages. A switching sequence has been designed to identify the three primary colors. Short-circuiting of both junctions gives a high sensitivity to green light, as this light is absorbed close to the junction. >
{"title":"Tri-calorimetric Detector In Silicon With One Photodiode","authors":"R. Wolffenbuttel, E. Blaauw, M. R. Wolffenbuttel, G. de Graaf","doi":"10.1109/DRC.1991.664681","DOIUrl":"https://doi.org/10.1109/DRC.1991.664681","url":null,"abstract":"Summary form only given. A technique is described that has been developed and implemented in silicon to independently program the long- and the short-wavelength response of a photodiode in order to have a tri-colorimetric response using only one diode without dyed filters by switching between reverse voltages. A switching sequence has been designed to identify the three primary colors. Short-circuiting of both junctions gives a high sensitivity to green light, as this light is absorbed close to the junction. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"358 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133910850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The MQW laser exhibits no degradation during 500 h of CW operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor-phase epitaxy method, high-quality InP films with a full width at half maximum for the X-ray rocking curve of 110 arcsec, a dislocation density of 10/sup 7/ cm/sup -2/, and low residual stress of 2*10/sup 8/ dyn/cm/sup 2/ were obtained. Results of a preliminary CW aging test at room temperature showed no operational degradation over 500 h with a constant output power of 2 mW per facet. This LD appears to be a promising light source candidate for application to OEICs (optoelectronic integrated circuits). >
{"title":"Stable-cw-operation of a Mqw Laser Emitting at 1.54 /spl mu/m on a Si Substrate at Room Temperature","authors":"M. Sugo, H. Mori, Y. Itoh, Y. Sakai, M. Tachikawa","doi":"10.1109/DRC.1991.664670","DOIUrl":"https://doi.org/10.1109/DRC.1991.664670","url":null,"abstract":"Summary form only given. The MQW laser exhibits no degradation during 500 h of CW operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor-phase epitaxy method, high-quality InP films with a full width at half maximum for the X-ray rocking curve of 110 arcsec, a dislocation density of 10/sup 7/ cm/sup -2/, and low residual stress of 2*10/sup 8/ dyn/cm/sup 2/ were obtained. Results of a preliminary CW aging test at room temperature showed no operational degradation over 500 h with a constant output power of 2 mW per facet. This LD appears to be a promising light source candidate for application to OEICs (optoelectronic integrated circuits). >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131313547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Young-Kai Chen, Ming C. Wu, M. Hong, J. Mannaerts, M. Chin, A. Sergent
Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20 degrees transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power. >
{"title":"A Novel Sal-Pinsch Quantum Well Laser Structure for a Pinched Beam Divergence","authors":"Young-Kai Chen, Ming C. Wu, M. Hong, J. Mannaerts, M. Chin, A. Sergent","doi":"10.1109/DRC.1991.664671","DOIUrl":"https://doi.org/10.1109/DRC.1991.664671","url":null,"abstract":"Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20 degrees transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"240 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113996677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. An examination is made of the current-gain-Early-voltage ( beta -V/sub A/) tradeoff for graded base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors (HBTs). A two-layer stepped-based structure was used to achieve a beta V/sub A/ product greater than 100000 V at room temperature for a device predicted to have a cutoff frequency in excess of 10 GHz. This is an improvement of this figure of merit by a factor greater than 20. It is shown that the Early voltage in a bipolar transistor can be improved dramatically by inserting a thin heavily doped p/sup +/-SiGe layer at the collector side of the base, without any reduction in gain. >
{"title":"Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar Transistors","authors":"E. Prinz, J. Sturm","doi":"10.1109/DRC.1991.664678","DOIUrl":"https://doi.org/10.1109/DRC.1991.664678","url":null,"abstract":"Summary form only given. An examination is made of the current-gain-Early-voltage ( beta -V/sub A/) tradeoff for graded base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors (HBTs). A two-layer stepped-based structure was used to achieve a beta V/sub A/ product greater than 100000 V at room temperature for a device predicted to have a cutoff frequency in excess of 10 GHz. This is an improvement of this figure of merit by a factor greater than 20. It is shown that the Early voltage in a bipolar transistor can be improved dramatically by inserting a thin heavily doped p/sup +/-SiGe layer at the collector side of the base, without any reduction in gain. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"298 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116437067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. A modified poly buffered LOCOS (PBL) process is described which simplifies processing and provides advantages over conventional PBL and LOCOS processes. The use of a poly buffer between the pad oxide and the nitride layer offers the opportunity of integrating the poly gate deposition and the field isolating process and overcomes the processing difficulties of the conventional PBL while maintaining the advantage of a narrow spacing between active areas (THINOX). The process sequence of the conventional PBL and the integrated PBL (IPBL) process are summarized. >
{"title":"Integration of Poly Buffered Locos and Gate Processing for Submicron Isolation Technique","authors":"W. Juenghng, S. Hillenius, M. Chen, L. Fritzinger","doi":"10.1109/DRC.1991.664728","DOIUrl":"https://doi.org/10.1109/DRC.1991.664728","url":null,"abstract":"Summary form only given. A modified poly buffered LOCOS (PBL) process is described which simplifies processing and provides advantages over conventional PBL and LOCOS processes. The use of a poly buffer between the pad oxide and the nitride layer offers the opportunity of integrating the poly gate deposition and the field isolating process and overcomes the processing difficulties of the conventional PBL while maintaining the advantage of a narrow spacing between active areas (THINOX). The process sequence of the conventional PBL and the integrated PBL (IPBL) process are summarized. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"335 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127577322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Pedrotti, R. Pierson, R. Nubling, C. Farley, E. Sovero, M. Chang
{"title":"Ultra-High-Speed Pin/hbt Monolithic Oeic Photoreceiver","authors":"K. Pedrotti, R. Pierson, R. Nubling, C. Farley, E. Sovero, M. Chang","doi":"10.1109/DRC.1991.664714","DOIUrl":"https://doi.org/10.1109/DRC.1991.664714","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130662756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least Delta I/sub d/ for low V/sub d/ (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least Delta I/sub d/ under low V/sub d/. >
{"title":"Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced Gidl","authors":"A. Joshi, D. Kwong","doi":"10.1109/DRC.1991.664710","DOIUrl":"https://doi.org/10.1109/DRC.1991.664710","url":null,"abstract":"Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least Delta I/sub d/ for low V/sub d/ (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least Delta I/sub d/ under low V/sub d/. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125928796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y.J. Yang, T. Dziura, S.C. Wang, R. Fernandez, S. Wang
Summary form only given. Continuous-wave GaAs mushroom structure surface emitting laser (MSEL) operation at a threshold current as low as 1.6 mA, an output power >2.0 mW, and a single transverse mode up to three times threshold current is reported. The relatively large CW output power was achieved by reducing the series resistance using a selective zinc diffusion. The low threshold current and single-mode operation are attributed to good lateral current confinement in a small constricted region formed by mesa undercutting. The complete device was mounted junction-side up on a chip carrier and tested CW at room temperature. Some results are given. >
{"title":"Large Cw Power, Very Low Threshold, Single Transverse Mode Operation of Vertical Cavity Mushroom Structure Surface Emitting Lasers","authors":"Y.J. Yang, T. Dziura, S.C. Wang, R. Fernandez, S. Wang","doi":"10.1109/DRC.1991.664668","DOIUrl":"https://doi.org/10.1109/DRC.1991.664668","url":null,"abstract":"Summary form only given. Continuous-wave GaAs mushroom structure surface emitting laser (MSEL) operation at a threshold current as low as 1.6 mA, an output power >2.0 mW, and a single transverse mode up to three times threshold current is reported. The relatively large CW output power was achieved by reducing the series resistance using a selective zinc diffusion. The low threshold current and single-mode operation are attributed to good lateral current confinement in a small constricted region formed by mesa undercutting. The complete device was mounted junction-side up on a chip carrier and tested CW at room temperature. Some results are given. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116292445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The state of the art was discussed in terms of costs, densities, speeds, sizes, yields, rework, testing methodologies, and thermal capabilities for the principle production interconnects. Comparisons were made for each of the newer MCM (multichip module) technologies for which data are available. Observations about costs, reworkability, assembly methods, yields, and testing were made to indicate the author's views on where and how costs for MCMs can be driven down to become competitive with existing interconnect systems. >
{"title":"Current Capabilities/needs and future possibilities of multi-Chip-modules Summary","authors":"R.R. Johnson","doi":"10.1109/DRC.1991.664663","DOIUrl":"https://doi.org/10.1109/DRC.1991.664663","url":null,"abstract":"Summary form only given. The state of the art was discussed in terms of costs, densities, speeds, sizes, yields, rework, testing methodologies, and thermal capabilities for the principle production interconnects. Comparisons were made for each of the newer MCM (multichip module) technologies for which data are available. Observations about costs, reworkability, assembly methods, yields, and testing were made to indicate the author's views on where and how costs for MCMs can be driven down to become competitive with existing interconnect systems. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124653225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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