Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872665
S. Tanimoto, Y. Someda, M. Okumura, H. Ohta, Y. Sohda, N. Saito
A new approach of electron beam lithography is proposed for high-throughput exposure systems. In an exposure system using this approach, the electron sources are arranged in a matrix so that they produce an electron beam in the shape of a circuit pattern, which is focused on the target. We call our approach "matrix pattern imaging (MPI)". In such a system, the electron sources play a key role, and the MIM (metal-insulator-metal) cathode is a promising candidate for them. We therefore compared its properties to those of other candidates. We also performed simple projection experiments and evaluated the merits of such a system.
{"title":"Fundamental study of \"matrix pattern imaging\", EB system","authors":"S. Tanimoto, Y. Someda, M. Okumura, H. Ohta, Y. Sohda, N. Saito","doi":"10.1109/IMNC.2000.872665","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872665","url":null,"abstract":"A new approach of electron beam lithography is proposed for high-throughput exposure systems. In an exposure system using this approach, the electron sources are arranged in a matrix so that they produce an electron beam in the shape of a circuit pattern, which is focused on the target. We call our approach \"matrix pattern imaging (MPI)\". In such a system, the electron sources play a key role, and the MIM (metal-insulator-metal) cathode is a promising candidate for them. We therefore compared its properties to those of other candidates. We also performed simple projection experiments and evaluated the merits of such a system.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133114131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872733
B. Hamilton
In this talk, I describe work being carried out at UMIST and Daresbury Laboratory which is providing new experimental tools for measuring nano-scale structures. Synchrotron radiation, L edge absorption experiments, have demonstrated that local chemistry and electronic behaviour can be linked on the nano-structured silicon. Recent work has also shown that electron transport through nano-structured films is controlled by percolation phenomena, similar to transport in polymer films. The possibility of combining STM with photon probes is reviewed and examples of highly localised optical spectroscopy detected using STM are given.
{"title":"Probing semiconductor nano-structures with synchrotron radiation and STM","authors":"B. Hamilton","doi":"10.1109/IMNC.2000.872733","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872733","url":null,"abstract":"In this talk, I describe work being carried out at UMIST and Daresbury Laboratory which is providing new experimental tools for measuring nano-scale structures. Synchrotron radiation, L edge absorption experiments, have demonstrated that local chemistry and electronic behaviour can be linked on the nano-structured silicon. Recent work has also shown that electron transport through nano-structured films is controlled by percolation phenomena, similar to transport in polymer films. The possibility of combining STM with photon probes is reviewed and examples of highly localised optical spectroscopy detected using STM are given.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124150206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872746
T. Fukuda, K. Shimamura, N. Sarukura
A new, highly reproducible crystal growth technique for high quality fluorides has been developed. A series of fluorides free from cracks and inclusions has been grown for UV optical applications.
开发了一种高重复性的高质量氟化物晶体生长新技术。一系列无裂纹和夹杂物的氟化物已被用于紫外光学应用。
{"title":"Growth of new fluoride single crystals for optical applications","authors":"T. Fukuda, K. Shimamura, N. Sarukura","doi":"10.1109/IMNC.2000.872746","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872746","url":null,"abstract":"A new, highly reproducible crystal growth technique for high quality fluorides has been developed. A series of fluorides free from cracks and inclusions has been grown for UV optical applications.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130026515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872701
M. Ishibashi, S. Heike, T. Hashizume
Reports on a hybrid method of AFM lithography and optical lithography that increases the drawing speed and decreases the drawing length. Advanced devices, such as quantum ones, have both nanometer-scale structures and large area structures, such as contact pads. It takes a long time to fabricate all the patterns using AFM lithography alone. It is preferable to combine AFM lithography with optical lithography. In this way, AFM lithography is used for nanometer structures only. When this hybrid process is used, the most significant problem is aligning the patterns produced by optical lithography and AFM lithography. To solve this problem, we use small step structures fabricated by slight development on the resist surface, fabricated by optical-lithography exposure. The positional information of the pattern structure in the resist film, fabricated by using optical lithography, is obtained by observing the steps with AFM. The additional patterning is performed by using AFM lithography. Patterns can be observed without exposure, since the force needed to observe the surface and that for the exposure are different.
{"title":"AFM lithography combined with optical lithography","authors":"M. Ishibashi, S. Heike, T. Hashizume","doi":"10.1109/IMNC.2000.872701","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872701","url":null,"abstract":"Reports on a hybrid method of AFM lithography and optical lithography that increases the drawing speed and decreases the drawing length. Advanced devices, such as quantum ones, have both nanometer-scale structures and large area structures, such as contact pads. It takes a long time to fabricate all the patterns using AFM lithography alone. It is preferable to combine AFM lithography with optical lithography. In this way, AFM lithography is used for nanometer structures only. When this hybrid process is used, the most significant problem is aligning the patterns produced by optical lithography and AFM lithography. To solve this problem, we use small step structures fabricated by slight development on the resist surface, fabricated by optical-lithography exposure. The positional information of the pattern structure in the resist film, fabricated by using optical lithography, is obtained by observing the steps with AFM. The additional patterning is performed by using AFM lithography. Patterns can be observed without exposure, since the force needed to observe the surface and that for the exposure are different.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132328765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872656
M. Kanechika, Y. Mitsushima
We study silicon needle crystals fabricated by high-selective anisotropic dry etching. The etch mask is not the fine patterned photoresist but the oxygen precipitation, which is induced by nitride ion implantation and the following oxidization. The silicon needle crystals have less than 10 nm tip radius and high aspect ratio 7. We demonstrate the field emission diode by these silicon needle crystals.
{"title":"Silicon needle crystals fabricated by high-selective anisotropic dry etching and their characteristics of field emission current","authors":"M. Kanechika, Y. Mitsushima","doi":"10.1109/IMNC.2000.872656","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872656","url":null,"abstract":"We study silicon needle crystals fabricated by high-selective anisotropic dry etching. The etch mask is not the fine patterned photoresist but the oxygen precipitation, which is induced by nitride ion implantation and the following oxidization. The silicon needle crystals have less than 10 nm tip radius and high aspect ratio 7. We demonstrate the field emission diode by these silicon needle crystals.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126803061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872735
H. Kim, T. Noda, T. Kawazu, H. Sakaki
We have studied various aspects of GaAs/n-AlGaAs heterojunctions with self-assembled QDs near the channel. In particular, we have shown that the V/sub g/ dependence of the electron concentration in the channel is varied by trapping one electron in each QD. However, although much work has been done on current hysteresis characteristics of QD-memory devices, comparatively little is known on the control of its direction by modulating the initial conditions and shape of QDs memory cell. This letter draws attention to a previously unnoticed variation of current hysteresis effects associated with the height of InAs QDs. We also show that the channel current hysteresis is only controllable by regulating the initial gate-to-source bias conditions.
{"title":"Control of current hysteresis effects in a GaAs/n-AlGaAs quantum trap FET with embedded InAs quantum dots","authors":"H. Kim, T. Noda, T. Kawazu, H. Sakaki","doi":"10.1109/IMNC.2000.872735","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872735","url":null,"abstract":"We have studied various aspects of GaAs/n-AlGaAs heterojunctions with self-assembled QDs near the channel. In particular, we have shown that the V/sub g/ dependence of the electron concentration in the channel is varied by trapping one electron in each QD. However, although much work has been done on current hysteresis characteristics of QD-memory devices, comparatively little is known on the control of its direction by modulating the initial conditions and shape of QDs memory cell. This letter draws attention to a previously unnoticed variation of current hysteresis effects associated with the height of InAs QDs. We also show that the channel current hysteresis is only controllable by regulating the initial gate-to-source bias conditions.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"57 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120992648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872648
S. Tsuboi, H. Watanabe, M. Ezaki, H. Aoyama, Y. Kikuchi, Y. Nakayama, S. Ohki, T. Watanabe, T. Morosawa, K. Saito, M. Oda, T. Matsuda
A variable-shaped electron beam (e-beam) mask writer, EB-X3 was developed for 100 nm node 1/spl times/X-ray mask fabrication. It features a stable electron column of 100 kV and the address unit of 1 nm. This paper describes delineation characteristics of the EB-X3 on X-ray membrane mask. We have evaluated image placement (IP) accuracy and e-beam proximity effects on the X-ray membrane delineated with the EB-X3. In order to achieve highly precise IP and CD accuracy, we evaluated beam drift, temperature control, mask blanks support method, resist process, and proximity effect. Precise temperature control and a three-point support pallet are keys for excellent IP. Good CD control less than 10 nm was obtained with low proximity effects with ZEP resist and normal-hexyl acetate developer. The EB-X3 was used for X-ray mask fabrication in conjunction with an X-ray stepper in exposure experiments.
{"title":"Precise delineation characteristics for 1/spl times/X-ray mask using advanced electron beam mask writer EB-X3","authors":"S. Tsuboi, H. Watanabe, M. Ezaki, H. Aoyama, Y. Kikuchi, Y. Nakayama, S. Ohki, T. Watanabe, T. Morosawa, K. Saito, M. Oda, T. Matsuda","doi":"10.1109/IMNC.2000.872648","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872648","url":null,"abstract":"A variable-shaped electron beam (e-beam) mask writer, EB-X3 was developed for 100 nm node 1/spl times/X-ray mask fabrication. It features a stable electron column of 100 kV and the address unit of 1 nm. This paper describes delineation characteristics of the EB-X3 on X-ray membrane mask. We have evaluated image placement (IP) accuracy and e-beam proximity effects on the X-ray membrane delineated with the EB-X3. In order to achieve highly precise IP and CD accuracy, we evaluated beam drift, temperature control, mask blanks support method, resist process, and proximity effect. Precise temperature control and a three-point support pallet are keys for excellent IP. Good CD control less than 10 nm was obtained with low proximity effects with ZEP resist and normal-hexyl acetate developer. The EB-X3 was used for X-ray mask fabrication in conjunction with an X-ray stepper in exposure experiments.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121593582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872687
K. Masuda, M. Yamamoto, M. Kanaya, Y. Kanemitsu
The discovery of efficient photoluminescence (PL) from Si and Ge nanocrystals at room temperature has stimulated considerable efforts in understanding optical properties of indirect-gap group IV semiconductor nanocrystals. Bulk Ge crystal has a larger dielectric constant and smaller effective masses of carriers compared to the case of bulk Si crystal. Then, it is expected that quantum confinement effects would appear more pronounced in Ge nanocrystals than in Si nanocrystals. Recently, a number of different techniques have been developed to synthesize semiconductor nanocrystals. In particular, high-dose ion implantation is one of the most versatile techniques for nanocrystal fabrication, because the nanocrystal size can be controlled by changing the ion dose, the kinetic energy of ions and the annealing temperature. In this work, we have fabricated light-emitting Ge nanocrystals by means of Ge/sup +/ ion implantation into SiO/sub 2/ glasses followed by thermal annealing. Using multi-energy ion implantation techniques, the Ge nanocrystals samples with very small size fluctuation are obtained and these samples show near-infrared PL with a narrow spectral bandwidth.
{"title":"Structural and optical properties of Ge nanocrystals in SiO/sub 2/ glasses fabricated by multi-energy ion implantation","authors":"K. Masuda, M. Yamamoto, M. Kanaya, Y. Kanemitsu","doi":"10.1109/IMNC.2000.872687","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872687","url":null,"abstract":"The discovery of efficient photoluminescence (PL) from Si and Ge nanocrystals at room temperature has stimulated considerable efforts in understanding optical properties of indirect-gap group IV semiconductor nanocrystals. Bulk Ge crystal has a larger dielectric constant and smaller effective masses of carriers compared to the case of bulk Si crystal. Then, it is expected that quantum confinement effects would appear more pronounced in Ge nanocrystals than in Si nanocrystals. Recently, a number of different techniques have been developed to synthesize semiconductor nanocrystals. In particular, high-dose ion implantation is one of the most versatile techniques for nanocrystal fabrication, because the nanocrystal size can be controlled by changing the ion dose, the kinetic energy of ions and the annealing temperature. In this work, we have fabricated light-emitting Ge nanocrystals by means of Ge/sup +/ ion implantation into SiO/sub 2/ glasses followed by thermal annealing. Using multi-energy ion implantation techniques, the Ge nanocrystals samples with very small size fluctuation are obtained and these samples show near-infrared PL with a narrow spectral bandwidth.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117076012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872617
T. Tsuchizawa, H. Iriguchi, C. Takahashi, M. Shimada, S. Uchiyama, M. Oda
We investigated the effect of using fluoride gas in ECR etching of /spl alpha/-Ta and confirmed that the addition of CF4 to Cl2 reduces the pattern roughness and can fabricate x-ray masks with pattern sizes of less than 100 nm. The results of CD uniformity will also be reported.
{"title":"ECR etching of /spl alpha/-Ta for x-ray mask absorber using chlorine and fluoride gas mixture","authors":"T. Tsuchizawa, H. Iriguchi, C. Takahashi, M. Shimada, S. Uchiyama, M. Oda","doi":"10.1109/IMNC.2000.872617","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872617","url":null,"abstract":"We investigated the effect of using fluoride gas in ECR etching of /spl alpha/-Ta and confirmed that the addition of CF4 to Cl2 reduces the pattern roughness and can fabricate x-ray masks with pattern sizes of less than 100 nm. The results of CD uniformity will also be reported.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123654919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872641
Jin-Young Kim, D. Son, Eungsung Seo, Y. Sohn, Heung-Jin Bak, Hye-keun Oh
We developed a simulator that can predict spin coated resist thickness with different feature type, density and topology by using dimensionless parameter and liquid resist film thickness. The change of critical dimension with surrounding topology and pattern density is simulated for the non-uniform resist thickness.
{"title":"Prediction of resist non-uniformity caused by underlying pattern density and topology","authors":"Jin-Young Kim, D. Son, Eungsung Seo, Y. Sohn, Heung-Jin Bak, Hye-keun Oh","doi":"10.1109/IMNC.2000.872641","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872641","url":null,"abstract":"We developed a simulator that can predict spin coated resist thickness with different feature type, density and topology by using dimensionless parameter and liquid resist film thickness. The change of critical dimension with surrounding topology and pattern density is simulated for the non-uniform resist thickness.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125561060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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