Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632926
G. Tudosie, R. Vahldieck, A. Lu
This paper describes the realization of a 8x8 Butler matrix taking full advantage of the 3D packaging capability of LTCC. The novelty of the design lies in the folding and stacking of phase shifters and couplers on 40 layers of LTCC tape to reduce the lateral dimensions of a 5GHz Butler matrix. The achieved size reduction is better than 1/5 of the original planar design showing excellent electrical performance. Furthermore, the new LTCC realization allows modular extension of Butler matrices to multiples of 8x8.
{"title":"A novel modularized folded highly compact LTCC Butler matrix","authors":"G. Tudosie, R. Vahldieck, A. Lu","doi":"10.1109/MWSYM.2008.4632926","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632926","url":null,"abstract":"This paper describes the realization of a 8x8 Butler matrix taking full advantage of the 3D packaging capability of LTCC. The novelty of the design lies in the folding and stacking of phase shifters and couplers on 40 layers of LTCC tape to reduce the lateral dimensions of a 5GHz Butler matrix. The achieved size reduction is better than 1/5 of the original planar design showing excellent electrical performance. Furthermore, the new LTCC realization allows modular extension of Butler matrices to multiples of 8x8.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123254681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632972
Hoseok Seol, Changkun Park, Dong Ho Lee, Min Park, Songcheol Hong
A power Amplifier operating at 2.4-GHz is implemented using InGaP/GaAs HBT. The output matching network of the power amplifier is implemented on chip using 2:1 transformer. The transformer has less loss and broad frequency bandwidth in comparison with conventional LC output matching networks. Since a differential power cell is used, the power amplifier gets high gain although a sufficient ballast resistor is introduced. The measured input and output return losses are lower than −10 dB from 2.15 to 3-GHz. The center frequency of the small signal gain is 2.4-GHz, and the 1 dB bandwidth is 0.25-GHz. For 2.4-GHz input signal, power added efficiency at 1 dB compressed output power of 28.3 dBm is 40.2 %. The small signal gain is 29.8 dB. We can achieve a power and a gain matching in the same frequency range by using transformer as an output matching network.
{"title":"A 2.4-GHz HBT power amplifier using an on-chip transformer as an output matching network","authors":"Hoseok Seol, Changkun Park, Dong Ho Lee, Min Park, Songcheol Hong","doi":"10.1109/MWSYM.2008.4632972","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632972","url":null,"abstract":"A power Amplifier operating at 2.4-GHz is implemented using InGaP/GaAs HBT. The output matching network of the power amplifier is implemented on chip using 2:1 transformer. The transformer has less loss and broad frequency bandwidth in comparison with conventional LC output matching networks. Since a differential power cell is used, the power amplifier gets high gain although a sufficient ballast resistor is introduced. The measured input and output return losses are lower than −10 dB from 2.15 to 3-GHz. The center frequency of the small signal gain is 2.4-GHz, and the 1 dB bandwidth is 0.25-GHz. For 2.4-GHz input signal, power added efficiency at 1 dB compressed output power of 28.3 dBm is 40.2 %. The small signal gain is 29.8 dB. We can achieve a power and a gain matching in the same frequency range by using transformer as an output matching network.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"82 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123294989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633041
D. Resca, A. Raffo, A. Santarelli, G. Vannini, F. Filicori
This paper describes a new methodology for the extraction of an extrinsic parasitic network suitable for scalable electron device models. The extraction procedure is based on the data obtained through Full-Wave Electro-Magnetic (FW-EM) analyses of the passive structure of a reference device. The new topology proposed proves to be scalable according to simple linear rules derived from geometric considerations. This new parasitic network is used together with a scalable intrinsic device model in order to predict the behavior of different 0.25 μm GaAs PHEMTs (total gate-widths between 300 and 900 μm) belonging to a standard process for millimeter-wave applications. Better accuracy with respect to conventional modeling approaches, is proved up to 80 GHz.
{"title":"Extraction of an extrinsic parasitic network for accurate mm-Wave FET scalable modeling on the basis of Full-Wave EM simulation","authors":"D. Resca, A. Raffo, A. Santarelli, G. Vannini, F. Filicori","doi":"10.1109/MWSYM.2008.4633041","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633041","url":null,"abstract":"This paper describes a new methodology for the extraction of an extrinsic parasitic network suitable for scalable electron device models. The extraction procedure is based on the data obtained through Full-Wave Electro-Magnetic (FW-EM) analyses of the passive structure of a reference device. The new topology proposed proves to be scalable according to simple linear rules derived from geometric considerations. This new parasitic network is used together with a scalable intrinsic device model in order to predict the behavior of different 0.25 μm GaAs PHEMTs (total gate-widths between 300 and 900 μm) belonging to a standard process for millimeter-wave applications. Better accuracy with respect to conventional modeling approaches, is proved up to 80 GHz.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123296692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632930
G. Vendelin
This paper gives the history of the development of the first X-Band solid-state radar developed at Texas Instruments 1964-1970, which has pointed the way to today’s MIC and MMIC technology for microwave and millimeter-wave applications.
{"title":"Five years at Texas Instruments","authors":"G. Vendelin","doi":"10.1109/MWSYM.2008.4632930","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632930","url":null,"abstract":"This paper gives the history of the development of the first X-Band solid-state radar developed at Texas Instruments 1964-1970, which has pointed the way to today’s MIC and MMIC technology for microwave and millimeter-wave applications.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121128459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633107
K. Narendra, Chacko Prakash, Grebennikov Andrei, C. Paoloni, A. Mediano
Class E amplifier offers high efficiency aproaching 100% for an ideal case. This paper introduces a first practical implementation of a broadband Class E design combining a parallel circuit load network with reactance compensation technique. The novel broadband class E parallel circuit with reactance compensation has been investigated theoretically and experimentally. An efficient method of simulation technique using Harmonic Balance to predict the class E performance is presented as well. In measurement level, the drain efficiency of 74 % at operating power of 8 W and power flatness of 0.7 dB are achieved across bandwidth of 135 to 175 MHz with supply voltage of 7.2 V. Simulations were verified by measurements and good agreement was obtained.
{"title":"Design and computer simulation of high efficiency broadband parallel-circuit Class E RF power amplifier with reactance compensation technique","authors":"K. Narendra, Chacko Prakash, Grebennikov Andrei, C. Paoloni, A. Mediano","doi":"10.1109/MWSYM.2008.4633107","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633107","url":null,"abstract":"Class E amplifier offers high efficiency aproaching 100% for an ideal case. This paper introduces a first practical implementation of a broadband Class E design combining a parallel circuit load network with reactance compensation technique. The novel broadband class E parallel circuit with reactance compensation has been investigated theoretically and experimentally. An efficient method of simulation technique using Harmonic Balance to predict the class E performance is presented as well. In measurement level, the drain efficiency of 74 % at operating power of 8 W and power flatness of 0.7 dB are achieved across bandwidth of 135 to 175 MHz with supply voltage of 7.2 V. Simulations were verified by measurements and good agreement was obtained.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121534167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633208
T. Nielsen, S. Nedeljkovic, D. Halchin
This paper presents a large-signal hetrojunction bipolar transistor model for III-V technologies. A standard HBT compact model is demonstrated accurate in most regions of operation. At low collector supplies and high input drive levels, however, the compact model fails to accurately predict largesignal RF performance. Model inaccuracies are, through largesignal network analyzer measurements, attributed to minority carrier injection due to forward biased base-collector junction; a phenomenon which is not accounted for in the compact model. A hybrid model is proposed. This is a combination of the standard compact model and an artificial neural network based behavioral model. The artificial neural network is trained to empirically model minority carrier injection in the base-collector junction. Significant accuracy improvement is demonstrated and it is verified that greater accuracy comes at the expense of a very small degradation in execution speed.
{"title":"Large-signal hybrid compact/behavioral HBT model for III-V technology power amplifiers","authors":"T. Nielsen, S. Nedeljkovic, D. Halchin","doi":"10.1109/MWSYM.2008.4633208","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633208","url":null,"abstract":"This paper presents a large-signal hetrojunction bipolar transistor model for III-V technologies. A standard HBT compact model is demonstrated accurate in most regions of operation. At low collector supplies and high input drive levels, however, the compact model fails to accurately predict largesignal RF performance. Model inaccuracies are, through largesignal network analyzer measurements, attributed to minority carrier injection due to forward biased base-collector junction; a phenomenon which is not accounted for in the compact model. A hybrid model is proposed. This is a combination of the standard compact model and an artificial neural network based behavioral model. The artificial neural network is trained to empirically model minority carrier injection in the base-collector junction. Significant accuracy improvement is demonstrated and it is verified that greater accuracy comes at the expense of a very small degradation in execution speed.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125099713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633118
S. Scheiblhofer, Stefan Dipl.-Ing. Schuster, M. Jahn, R. Feger, A. Stelzer
In recent years, cooperative frequency-modulated continuous-wave radar based ranging and positioning systems attained significant attraction. In this paper, we present a novel analysis approach of the performance of these incoherent systems, with a special focus set on phase noise effects. We show the behavior in different signal to noise ratio conditions and compare two competing evaluation concepts. The results are verified on real measurement data, taken with a prototype ranging system in the 5.8 GHz ISM band.
{"title":"Performance analysis of cooperative FMCW radar distance measurement systems","authors":"S. Scheiblhofer, Stefan Dipl.-Ing. Schuster, M. Jahn, R. Feger, A. Stelzer","doi":"10.1109/MWSYM.2008.4633118","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633118","url":null,"abstract":"In recent years, cooperative frequency-modulated continuous-wave radar based ranging and positioning systems attained significant attraction. In this paper, we present a novel analysis approach of the performance of these incoherent systems, with a special focus set on phase noise effects. We show the behavior in different signal to noise ratio conditions and compare two competing evaluation concepts. The results are verified on real measurement data, taken with a prototype ranging system in the 5.8 GHz ISM band.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122920624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633209
M. Rudolph
This paper investigates the accuracy limitations of common compact bipolar transistor models towards higher frequencies. The device under test is a InGaP/GaAs HBT, simulated by the FBH HBT model. The results, however, analogously hold for similar bipolar devices and models. The investigation is based on an analytical approach that explains how the model approximations impact simulation accuracy. A model extension is proposed that improves the model at higher frequencies. Measurements are compared with large-signal model simulations that prove the analytical reasoning and highlight the relevance of the effect under realistic operation conditions.
{"title":"Limitations of current compact transit-time models for III–V-based HBTs","authors":"M. Rudolph","doi":"10.1109/MWSYM.2008.4633209","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633209","url":null,"abstract":"This paper investigates the accuracy limitations of common compact bipolar transistor models towards higher frequencies. The device under test is a InGaP/GaAs HBT, simulated by the FBH HBT model. The results, however, analogously hold for similar bipolar devices and models. The investigation is based on an analytical approach that explains how the model approximations impact simulation accuracy. A model extension is proposed that improves the model at higher frequencies. Measurements are compared with large-signal model simulations that prove the analytical reasoning and highlight the relevance of the effect under realistic operation conditions.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131583989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633102
N. Fichtner, S. Wane, D. Bajon, P. Russer
A combination of the transmission line matrix (TLM) and the transverse wave formulation (TWF) method based on a diakoptics approach is presented for efficient modeling of multiscale and multilayered planar structures. The formal similarities of TLM and TWF enable a direct diakoptics approach, partitioning the simulation domain into a TLM and a TWF region. The computationally inefficient time-domain convolution of the TLM wave pulses with the impulse responses at the domain separation interfaces is replaced by a vector multiplication in frequency-domain leading to a considerable reduction of the total simulation time.
{"title":"Interfacing the TLM and the TWF method using a diakoptics approach","authors":"N. Fichtner, S. Wane, D. Bajon, P. Russer","doi":"10.1109/MWSYM.2008.4633102","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633102","url":null,"abstract":"A combination of the transmission line matrix (TLM) and the transverse wave formulation (TWF) method based on a diakoptics approach is presented for efficient modeling of multiscale and multilayered planar structures. The formal similarities of TLM and TWF enable a direct diakoptics approach, partitioning the simulation domain into a TLM and a TWF region. The computationally inefficient time-domain convolution of the TLM wave pulses with the impulse responses at the domain separation interfaces is replaced by a vector multiplication in frequency-domain leading to a considerable reduction of the total simulation time.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116533439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632969
M. Abbasi, H. Zirath, I. Angelov
This paper introduces the use of the coupled transmission lines structure for impedance matching networks which is suitable for power amplifier design at millimeter-wave frequency bands. The structure can replace the conventional stub matching networks and MIM (Metal-Insulator-Metal) capacitors for DC blocking. Five MMIC power amplifiers have been designed based on coupled lines impedance transformers at 35 GHz, 60 GHz and 100 GHz. The fabricated two-stage 35 GHz PA has a small-signal gain of 20 dB and input and output reflection coefficients of less than −10 dB and can deliver 16 dBm output power. The two-stage 60 GHz power amplifier shows 15dB of small-signal gain and less than −10 dB of reflection coefficients with the output power of 16 dBm. The 100 GHz amplifier has small-signal gain of 10 dB and 7 dBm output power.
{"title":"Q-, V-, and W-band power amplifiers utilizing coupled lines for impedance matching","authors":"M. Abbasi, H. Zirath, I. Angelov","doi":"10.1109/MWSYM.2008.4632969","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632969","url":null,"abstract":"This paper introduces the use of the coupled transmission lines structure for impedance matching networks which is suitable for power amplifier design at millimeter-wave frequency bands. The structure can replace the conventional stub matching networks and MIM (Metal-Insulator-Metal) capacitors for DC blocking. Five MMIC power amplifiers have been designed based on coupled lines impedance transformers at 35 GHz, 60 GHz and 100 GHz. The fabricated two-stage 35 GHz PA has a small-signal gain of 20 dB and input and output reflection coefficients of less than −10 dB and can deliver 16 dBm output power. The two-stage 60 GHz power amplifier shows 15dB of small-signal gain and less than −10 dB of reflection coefficients with the output power of 16 dBm. The 100 GHz amplifier has small-signal gain of 10 dB and 7 dBm output power.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127815108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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