Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632980
T. Karacolak, E. Topsakal
The main objective of this study is to design and testing of a small size dual band implantable antenna operating in Medical Implant Communications Service (MICS) (402 MHz–405 MHz) and Industrial, Scientific and Medical (ISM) (2.4 GHz–2.48 GHz) bands. The antenna is intended for wireless medical monitoring of the physiological parameters such as glucose, pressure, temperature etc. First, the electrical properties (εr and σ) of skin samples from donor rats were measured at MSU’s College of Veterinary Medicine and then a computer model was created. The dual band antenna was then designed using an in-house Finite Element Boundary Integral solvers in conjunction with Particle Swarm Optimization (PSO) algorithm. In vitro tests are performed using skin mimicking materials. Results regarding the return loss and gain of the designed antenna were given and discussed in detail.
{"title":"Electrical properties of nude rat skin and design of implantable antennas for wireless data telemetry","authors":"T. Karacolak, E. Topsakal","doi":"10.1109/MWSYM.2008.4632980","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632980","url":null,"abstract":"The main objective of this study is to design and testing of a small size dual band implantable antenna operating in Medical Implant Communications Service (MICS) (402 MHz–405 MHz) and Industrial, Scientific and Medical (ISM) (2.4 GHz–2.48 GHz) bands. The antenna is intended for wireless medical monitoring of the physiological parameters such as glucose, pressure, temperature etc. First, the electrical properties (εr and σ) of skin samples from donor rats were measured at MSU’s College of Veterinary Medicine and then a computer model was created. The dual band antenna was then designed using an in-house Finite Element Boundary Integral solvers in conjunction with Particle Swarm Optimization (PSO) algorithm. In vitro tests are performed using skin mimicking materials. Results regarding the return loss and gain of the designed antenna were given and discussed in detail.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128004773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633160
J. Alvarado, K. Kornegay, B. Welch, Yanxin Wang
A 91 GHz low-noise amplifier (LNA) using a unilateral gain peaking design technique is presented. Parasitic capacitances from the layout of transistors are exploited in order to frequency shift the peak of Mason’s Unilateral Gain. This methodology enhances amplifier gain performance tremendously without additional power consumption or penalty in Noise Figure. The LNA was developed in IBM’s 8HP 0.12 μm, 200 GHz fT, SiGe technology. The measured results demonstrate a peak gain of 13 dB, an IIP3 of −5.4dBm, a Noise Figure of 5.1 dB with DC power consumption of only 8.1 mW at 91 GHz. The amplifier exhibits a 3-dB Gain Bandwidth of 16 GHz from 84 – 100 GHz with a minimum Gain of 10 dB and an average NF of only 5.5 dB. This device has the highest known reported figure of merit (28.9) for a silicon based W-Band LNA.
{"title":"W-band SiGe LNA using unilateral gain peaking","authors":"J. Alvarado, K. Kornegay, B. Welch, Yanxin Wang","doi":"10.1109/MWSYM.2008.4633160","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633160","url":null,"abstract":"A 91 GHz low-noise amplifier (LNA) using a unilateral gain peaking design technique is presented. Parasitic capacitances from the layout of transistors are exploited in order to frequency shift the peak of Mason’s Unilateral Gain. This methodology enhances amplifier gain performance tremendously without additional power consumption or penalty in Noise Figure. The LNA was developed in IBM’s 8HP 0.12 μm, 200 GHz fT, SiGe technology. The measured results demonstrate a peak gain of 13 dB, an IIP3 of −5.4dBm, a Noise Figure of 5.1 dB with DC power consumption of only 8.1 mW at 91 GHz. The amplifier exhibits a 3-dB Gain Bandwidth of 16 GHz from 84 – 100 GHz with a minimum Gain of 10 dB and an average NF of only 5.5 dB. This device has the highest known reported figure of merit (28.9) for a silicon based W-Band LNA.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132562638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632989
S. Maas, J. Pedro
This paper describes a behavioral model based on Volterra series, for use in a time-domain system simulator. Model identification is implemented by harmonic balance analysis of the modeled circuit, generating frequency-domain transfer functions, which are converted to time-domain kernels. The high efficiency model identification process minimizes computational effort, resulting in a highly practical methodology.
{"title":"Implementation of a Volterra behavioral model for system simulation","authors":"S. Maas, J. Pedro","doi":"10.1109/MWSYM.2008.4632989","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632989","url":null,"abstract":"This paper describes a behavioral model based on Volterra series, for use in a time-domain system simulator. Model identification is implemented by harmonic balance analysis of the modeled circuit, generating frequency-domain transfer functions, which are converted to time-domain kernels. The high efficiency model identification process minimizes computational effort, resulting in a highly practical methodology.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132565538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632977
R. Islam, G. Eleftheriades
A Negative-Refractive-Index Transmission-Line (NRI-TL) inspired filter is realized by replacing the traditional shunt inductive loading with a series LC resonator to ground. Design equations for the filter are compared with full-wave simulations and experimental results are presented for a highly-selective folded implementation exhibiting 5% bandwidth at 2.03 GHz , 1 dB insertion-loss and a maximum band-edge slope of 2.15 dB/MHz.
{"title":"A compact highly-selective filter inspired by Negative-Refractive-Index Transmission Lines","authors":"R. Islam, G. Eleftheriades","doi":"10.1109/MWSYM.2008.4632977","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632977","url":null,"abstract":"A Negative-Refractive-Index Transmission-Line (NRI-TL) inspired filter is realized by replacing the traditional shunt inductive loading with a series LC resonator to ground. Design equations for the filter are compared with full-wave simulations and experimental results are presented for a highly-selective folded implementation exhibiting 5% bandwidth at 2.03 GHz , 1 dB insertion-loss and a maximum band-edge slope of 2.15 dB/MHz.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133485833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633091
A. Yatsenko, J. Heyen, S. Sakhnenko, B. Vorotnikov, P. Heide
A very compact dual-band LTCC module supporting WiMAX IEEE 802.16e-2005 and Wi-Fi IEEE 802.11a/b/g standards is presented. The frontend module (FEM) integrates in less than 50mm2 all required passive and active functions for 1×2 (1 Transmit, 2 receive paths) MIMO operability. The FEM package has SMT compatible footprint and is 1.4mm high. Full FEM measurements results show good performance and fully validate the passive integration approach.
{"title":"Highly-integrated dual-band front-end module for WLAN and WiMAX applications based on LTCC technology","authors":"A. Yatsenko, J. Heyen, S. Sakhnenko, B. Vorotnikov, P. Heide","doi":"10.1109/MWSYM.2008.4633091","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633091","url":null,"abstract":"A very compact dual-band LTCC module supporting WiMAX IEEE 802.16e-2005 and Wi-Fi IEEE 802.11a/b/g standards is presented. The frontend module (FEM) integrates in less than 50mm2 all required passive and active functions for 1×2 (1 Transmit, 2 receive paths) MIMO operability. The FEM package has SMT compatible footprint and is 1.4mm high. Full FEM measurements results show good performance and fully validate the passive integration approach.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131851725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633083
A. Shitvov, D. Zelenchuk, A. Schuchinsky, V. Fusco, N. Buchanan
A new approach to the direct observation of third-order passive intermodulation (PIM3) products on the microstrip transmission lines is proposed. Mapping of PIM3 product distributions along printed microstrip traces and nearby localised sources has been realised with the aid of the near field probing and a standard PIM analyser. The results of PIM3 measurements are presented and discussed in comparison with simulations based on a nonlinear transmission line model (NTL) as well as earlier experimental studies.
{"title":"Mapping of passive intermodulation products on microstrip lines","authors":"A. Shitvov, D. Zelenchuk, A. Schuchinsky, V. Fusco, N. Buchanan","doi":"10.1109/MWSYM.2008.4633083","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633083","url":null,"abstract":"A new approach to the direct observation of third-order passive intermodulation (PIM3) products on the microstrip transmission lines is proposed. Mapping of PIM3 product distributions along printed microstrip traces and nearby localised sources has been realised with the aid of the near field probing and a standard PIM analyser. The results of PIM3 measurements are presented and discussed in comparison with simulations based on a nonlinear transmission line model (NTL) as well as earlier experimental studies.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134077616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632937
K. Frigui, D. Baillargeat, S. Verdeyme, S. Bila, A. Catherinot, J. Puech, D. Pacaud, J. Herren
A description of microwave breakdown in output multiplexer filter is presented in this paper. Such a phenomenon can affect the device and cause irreversible damage. It is so necessary to be able to predict the power level which can generate such a microwave breakdown. To study this problem, a multidisciplinary approach with a combination of three fields of science was used: electromagnetic, thermal transfer theory and plasma physics. In this paper new 1D and 3D numerical investigations of microwave breakdown in OMUX filters are presented.
{"title":"Theoretical investigation of microwave breakdown ignition in OMUX filters. A 3D numerical modeling approach","authors":"K. Frigui, D. Baillargeat, S. Verdeyme, S. Bila, A. Catherinot, J. Puech, D. Pacaud, J. Herren","doi":"10.1109/MWSYM.2008.4632937","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632937","url":null,"abstract":"A description of microwave breakdown in output multiplexer filter is presented in this paper. Such a phenomenon can affect the device and cause irreversible damage. It is so necessary to be able to predict the power level which can generate such a microwave breakdown. To study this problem, a multidisciplinary approach with a combination of three fields of science was used: electromagnetic, thermal transfer theory and plasma physics. In this paper new 1D and 3D numerical investigations of microwave breakdown in OMUX filters are presented.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134091361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632914
A. Ezzeddine, Ho-Chung Huang
We report the design and performance of an ultra-broadband power amplifier. It achieves 10 Watts output power with 21dB ± 1.5dB gain from 20 MHz to 3000 MHz. At lower frequencies from 20 to 1000 MHz the output power is 15 Watts with 22% efficiency. To achieve this performance, we employ a new design concept to control the device impedance and the power combiner impedance to be naturally 50 Ohms, such that no impedance matching is needed. Also, we developed a broadband microwave balun as a push-pull power combiner, which doubles as an impedance transformer. We believe the combination of output power, bandwidth and efficiency is the best reported to date.
{"title":"10W ultra-broadband power amplifier","authors":"A. Ezzeddine, Ho-Chung Huang","doi":"10.1109/MWSYM.2008.4632914","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632914","url":null,"abstract":"We report the design and performance of an ultra-broadband power amplifier. It achieves 10 Watts output power with 21dB ± 1.5dB gain from 20 MHz to 3000 MHz. At lower frequencies from 20 to 1000 MHz the output power is 15 Watts with 22% efficiency. To achieve this performance, we employ a new design concept to control the device impedance and the power combiner impedance to be naturally 50 Ohms, such that no impedance matching is needed. Also, we developed a broadband microwave balun as a push-pull power combiner, which doubles as an impedance transformer. We believe the combination of output power, bandwidth and efficiency is the best reported to date.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115070448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633081
J. Buckwalter
High-speed digital signal integrity is strongly limited by microwave reflections, which degrade the reliability of a serial link. This work describes the relationship between the reflections and attenuation that occur along interconnects and the signal integrity. Bounds on ISI and DDJ resulting from reflections and attenuation quantify system design of link jitter budgets. This paper demonstrates analytical methods to quickly deduce the signal integrity penalty of transmission line discontinuities.
{"title":"Signal integrity in reflection-limited channels","authors":"J. Buckwalter","doi":"10.1109/MWSYM.2008.4633081","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633081","url":null,"abstract":"High-speed digital signal integrity is strongly limited by microwave reflections, which degrade the reliability of a serial link. This work describes the relationship between the reflections and attenuation that occur along interconnects and the signal integrity. Bounds on ISI and DDJ resulting from reflections and attenuation quantify system design of link jitter budgets. This paper demonstrates analytical methods to quickly deduce the signal integrity penalty of transmission line discontinuities.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115371428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633300
Ki Jin Han, M. Swaminathan, E. Engin
For wideband modeling of large and complicated three-dimensional interconnects, this paper proposes an efficiency improvement in solving electric field integral equation with cylindrical conduction mode basis functions. Based on the multifunction method, the improved method reduces computational cost by using smaller number of higher-order basis functions for computing mutual inductances between far-separated conductors. From the modeling examples of through-hole vias and bonding wires in stacked IC’s, the proposed method is verified for application to real three-dimensional interconnects.
{"title":"Wideband electrical modeling of large three-dimensional interconnects using accelerated generation of partial impedances with cylindrical conduction mode basis functions","authors":"Ki Jin Han, M. Swaminathan, E. Engin","doi":"10.1109/MWSYM.2008.4633300","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633300","url":null,"abstract":"For wideband modeling of large and complicated three-dimensional interconnects, this paper proposes an efficiency improvement in solving electric field integral equation with cylindrical conduction mode basis functions. Based on the multifunction method, the improved method reduces computational cost by using smaller number of higher-order basis functions for computing mutual inductances between far-separated conductors. From the modeling examples of through-hole vias and bonding wires in stacked IC’s, the proposed method is verified for application to real three-dimensional interconnects.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115653135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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