Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632925
Hua Wang, Sanggeun Jeon, Yu-jiu Wang, F. Bohn, A. Natarajan, A. Babakhani, A. Hajimiri
This paper presents a scalable phased-array receiver system that covers a tritave bandwidth of 6-to-18 GHz implemented in a 130nm CMOS process. The single receiver element with a 10-bit phase shifting resolution achieves a maximum phase error of 2.5° within a baseband amplitude variation of 1.5dB for an arbitrary target angle. This dense interpolation provides excellent phase error/offset calibration capability in the array. A 4-element electrical array pattern is measured at 6GHz, 13.5GHz and 18GHz, showing a worst case peak-to-null ratio of 21.5dB. The EVM and phase noise improvements of the array compared with the single receiver element are also shown.
{"title":"A tunable concurrent 6-to-18GHz phased-array system in CMOS","authors":"Hua Wang, Sanggeun Jeon, Yu-jiu Wang, F. Bohn, A. Natarajan, A. Babakhani, A. Hajimiri","doi":"10.1109/MWSYM.2008.4632925","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632925","url":null,"abstract":"This paper presents a scalable phased-array receiver system that covers a tritave bandwidth of 6-to-18 GHz implemented in a 130nm CMOS process. The single receiver element with a 10-bit phase shifting resolution achieves a maximum phase error of 2.5° within a baseband amplitude variation of 1.5dB for an arbitrary target angle. This dense interpolation provides excellent phase error/offset calibration capability in the array. A 4-element electrical array pattern is measured at 6GHz, 13.5GHz and 18GHz, showing a worst case peak-to-null ratio of 21.5dB. The EVM and phase noise improvements of the array compared with the single receiver element are also shown.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132151912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633216
M. Bozzi, L. Perregrini, Ke Wu
This paper presents an efficient technique for the evaluation of different types of losses in substrate integrated waveguide (SIW). This technique is based on the Boundary Integral-Resonant Mode Expansion (BI-RME) method in conjunction with a perturbation approach. This method also permits to derive automatically multimodal and parametric equivalent circuit models of SIW discontinuities, which can be adopted for an efficient design of complex SIW circuits. Moreover, a comparison of losses in different types of planar interconnects (SIW, microstrip, coplanar waveguide) is presented.
{"title":"Modeling of losses in substrate integrated waveguide by Boundary Integral-Resonant Mode Expansion method","authors":"M. Bozzi, L. Perregrini, Ke Wu","doi":"10.1109/MWSYM.2008.4633216","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633216","url":null,"abstract":"This paper presents an efficient technique for the evaluation of different types of losses in substrate integrated waveguide (SIW). This technique is based on the Boundary Integral-Resonant Mode Expansion (BI-RME) method in conjunction with a perturbation approach. This method also permits to derive automatically multimodal and parametric equivalent circuit models of SIW discontinuities, which can be adopted for an efficient design of complex SIW circuits. Moreover, a comparison of losses in different types of planar interconnects (SIW, microstrip, coplanar waveguide) is presented.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128871454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633033
J. Rautio
Perfectly calibrated internal ports have recently been developed for high frequency electromagnetic analysis of planar circuits. This capability has never before been available. As such, microwave designers are only just now learning the value of such ports. This overview paper describes new and extremely efficient design methodologies that are now practical. For example, if properly prepared, an entire circuit can be EM (electromagnetically) analyzed once and the precise analysis of all subsequent modifications (tuning, tweaking) of the circuit provided essentially instantly. Another capability enabled by perfectly calibrated ports is compact model synthesis. These capabilities are illustrated with examples.
{"title":"Perfectly calibrated internal ports in EM analysis of planar circuits","authors":"J. Rautio","doi":"10.1109/MWSYM.2008.4633033","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633033","url":null,"abstract":"Perfectly calibrated internal ports have recently been developed for high frequency electromagnetic analysis of planar circuits. This capability has never before been available. As such, microwave designers are only just now learning the value of such ports. This overview paper describes new and extremely efficient design methodologies that are now practical. For example, if properly prepared, an entire circuit can be EM (electromagnetically) analyzed once and the precise analysis of all subsequent modifications (tuning, tweaking) of the circuit provided essentially instantly. Another capability enabled by perfectly calibrated ports is compact model synthesis. These capabilities are illustrated with examples.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131405068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632971
Y. Chow, C. K. Yong, Joan Lee, H.K. Lee, J. Rajendran, S. Khoo, M.L. Soo, C. Chan
This paper describes the design and realization of a linear power amplifier for the IEEE 802.16e and UMTS LTE applications operating at the (2.3-2.7)GHz band. The power amplifier comprises a MMIC that uses a proprietary 0.25um enhancement-mode pHEMT technology with integrated output matching inside the module. When tested using a 10MHz bandwidth IEEE802.16e signal with 64-QAM modulation, the amplifier exhibits a linear power output of (23 -24)dBm across the full (2.3-2.7)GHz band with less than 2.5% EVM on a single 3.3V supply while at least 26dBm is typically available with a 5V supply. Efficiency is typically (15-17)% with this supply range. A 20dB bypass gain attenuator that is activated by a CMOS-compatible voltage pin is included on-chip. Output power detection is achieved by the use of an on-chip power detector and a bias shutdown voltage shuts down the complete amplifier. The complete module is packaged in a molded chip-on-board (MCOB) 5mm x 5mm module.
{"title":"A variable supply, (2.3-2.7)GHz linear power amplifier module for IEEE 802.16e and LTE applications using E-mode pHEMT technology","authors":"Y. Chow, C. K. Yong, Joan Lee, H.K. Lee, J. Rajendran, S. Khoo, M.L. Soo, C. Chan","doi":"10.1109/MWSYM.2008.4632971","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632971","url":null,"abstract":"This paper describes the design and realization of a linear power amplifier for the IEEE 802.16e and UMTS LTE applications operating at the (2.3-2.7)GHz band. The power amplifier comprises a MMIC that uses a proprietary 0.25um enhancement-mode pHEMT technology with integrated output matching inside the module. When tested using a 10MHz bandwidth IEEE802.16e signal with 64-QAM modulation, the amplifier exhibits a linear power output of (23 -24)dBm across the full (2.3-2.7)GHz band with less than 2.5% EVM on a single 3.3V supply while at least 26dBm is typically available with a 5V supply. Efficiency is typically (15-17)% with this supply range. A 20dB bypass gain attenuator that is activated by a CMOS-compatible voltage pin is included on-chip. Output power detection is achieved by the use of an on-chip power detector and a bias shutdown voltage shuts down the complete amplifier. The complete module is packaged in a molded chip-on-board (MCOB) 5mm x 5mm module.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127410283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632948
L. Rabieirad, S. Mohammadi
Design, simulation and measurement of a reconfigurable CMOS RF tuner that can be utilized in the RF front-end of a software defined radio are presented. 0.13μm high Q CMOS varactors controlled by a 22bit shift register are placed periodically on a low loss Coplanar Waveguide (CPW) transmission line to form a 4-11GHz reconfigurable tuner. The monolithic tuner does not use any MEMS devices to achieve the reconfigurability.
{"title":"A reconfigurable MEMS-less CMOS tuner for software defined radio","authors":"L. Rabieirad, S. Mohammadi","doi":"10.1109/MWSYM.2008.4632948","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632948","url":null,"abstract":"Design, simulation and measurement of a reconfigurable CMOS RF tuner that can be utilized in the RF front-end of a software defined radio are presented. 0.13μm high Q CMOS varactors controlled by a 22bit shift register are placed periodically on a low loss Coplanar Waveguide (CPW) transmission line to form a 4-11GHz reconfigurable tuner. The monolithic tuner does not use any MEMS devices to achieve the reconfigurability.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115577599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633089
Nastaran Behjou, T. Larsen, Morten Hoegdal
This paper addresses the practical design issues of a multi-standard RF sub-sampling front-end. The system level design flow of a dual-standard sub-sampling receiver is provided with focus on two important design issues. The first critical design issue is the careful selection of the sampling rate and consequently the frequency plan of the receiver. This is done in this paper based on a novel proposed interfering profile. The second issue relates to the RF requirements of the sub-sampling receiver. By considering the system issues, multi-standard operation and interfering effects in a RF sub-sampling receiver supporting UMTS and WLAN, the receiver requirements have been derived based on the existing specifications. The proposed issues are theoretically analyzed and simulated. Furthermore, measurements are made on a designed and implemented sub-sampling receiver. The experimental results agree fully with theory and simulations.
{"title":"Design of a simultaneous multi-band RF sub-sampling receiver","authors":"Nastaran Behjou, T. Larsen, Morten Hoegdal","doi":"10.1109/MWSYM.2008.4633089","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633089","url":null,"abstract":"This paper addresses the practical design issues of a multi-standard RF sub-sampling front-end. The system level design flow of a dual-standard sub-sampling receiver is provided with focus on two important design issues. The first critical design issue is the careful selection of the sampling rate and consequently the frequency plan of the receiver. This is done in this paper based on a novel proposed interfering profile. The second issue relates to the RF requirements of the sub-sampling receiver. By considering the system issues, multi-standard operation and interfering effects in a RF sub-sampling receiver supporting UMTS and WLAN, the receiver requirements have been derived based on the existing specifications. The proposed issues are theoretically analyzed and simulated. Furthermore, measurements are made on a designed and implemented sub-sampling receiver. The experimental results agree fully with theory and simulations.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115879949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633192
N. Messaoudi, M. Fares, S. Boumaiza, J. Wood
this paper expounds on the computation complexity reduction of memory polynomial (MP) digital predistorter (DPD) construction and implementation as needed to linearize power amplifiers (PA) when driven with multi-carrier signals. For that, the even-order terms in the MP branches were first removed. Then, the PA memory effects theory was used to further reduce the number of coefficients of the MP-DPD by decreasing the nonlinearity orders in the different branches individually. These two steps allowed for a reduction of the number of coefficients to almost one-third and the conditioning number by three orders of magnitude while maintaining the same linearization capability. This substantially alleviates the requirements on the digital signal processors and the time needed to construct and implement the MP-DPD in real environment. Experimental validation carried out using a 400Watt Doherty Power Amplifier (DPA), driven with 4-Carrier WCDMA signal, showed excellent linearization capability by achieving an ACPR of better than 50dBcwith a power efficiency of better than 42.4%.
{"title":"Complexity reduced odd-order memory polynomial pre-distorter for 400-watt multi-carrier Doherty amplifier linearization","authors":"N. Messaoudi, M. Fares, S. Boumaiza, J. Wood","doi":"10.1109/MWSYM.2008.4633192","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633192","url":null,"abstract":"this paper expounds on the computation complexity reduction of memory polynomial (MP) digital predistorter (DPD) construction and implementation as needed to linearize power amplifiers (PA) when driven with multi-carrier signals. For that, the even-order terms in the MP branches were first removed. Then, the PA memory effects theory was used to further reduce the number of coefficients of the MP-DPD by decreasing the nonlinearity orders in the different branches individually. These two steps allowed for a reduction of the number of coefficients to almost one-third and the conditioning number by three orders of magnitude while maintaining the same linearization capability. This substantially alleviates the requirements on the digital signal processors and the time needed to construct and implement the MP-DPD in real environment. Experimental validation carried out using a 400Watt Doherty Power Amplifier (DPA), driven with 4-Carrier WCDMA signal, showed excellent linearization capability by achieving an ACPR of better than 50dBcwith a power efficiency of better than 42.4%.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124271666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633253
M. Gil, J. Bonache, F. Martín
In this work, it is shown that complementary spiral resonators (CSRs) etched in the ground plane of a microstrip line are useful for the implementation of band pass filters with very small dimensions and wide stop bands. By combining the CSRs with two series capacitive gaps and inductive vias, two transmission zeros arise. By properly allocating such transmission zeros at both sides of the pass band of interest, the out-of band rejection and frequency selectivity of the filters can be controlled. A prototype device example is reported to illustrate the performance and size of these CSR-based filters. This is an order-three Chebyshev band pass filter centered at ƒo=1.1GHz with 10% fractional bandwidth. Measured in-band losses (optimum value) are IL=−4.42dB, in-band return losses are better than 9dB, and stop band rejection is better than 55dB up to 2.57GHz. Filter area is as small as 23.2 mm × 8.9 mm, that is 0.22 λ × 0.08 λ, where λ is the wavelength (at the central filter frequency) of a 50Ω microstrip line in the considered substrate. The key novel and advantageous aspect of the reported filters is their small size, which is related to the small electrical size of CSRs. Another advantage is frequency selectivity, which is due to the presence of a transmission zero at both edges of the pass band. The limitative aspect is their relatively small unloaded quality factor (Qu), this being attributed to the small dimensions of the considered resonators. These CSR-based devices can be of interest in those applications where size and frequency selectivity are the most severe requirements.
{"title":"Ultra compact band pass filters implemented through complementary spiral resonators (CSRs)","authors":"M. Gil, J. Bonache, F. Martín","doi":"10.1109/MWSYM.2008.4633253","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633253","url":null,"abstract":"In this work, it is shown that complementary spiral resonators (CSRs) etched in the ground plane of a microstrip line are useful for the implementation of band pass filters with very small dimensions and wide stop bands. By combining the CSRs with two series capacitive gaps and inductive vias, two transmission zeros arise. By properly allocating such transmission zeros at both sides of the pass band of interest, the out-of band rejection and frequency selectivity of the filters can be controlled. A prototype device example is reported to illustrate the performance and size of these CSR-based filters. This is an order-three Chebyshev band pass filter centered at ƒo=1.1GHz with 10% fractional bandwidth. Measured in-band losses (optimum value) are IL=−4.42dB, in-band return losses are better than 9dB, and stop band rejection is better than 55dB up to 2.57GHz. Filter area is as small as 23.2 mm × 8.9 mm, that is 0.22 λ × 0.08 λ, where λ is the wavelength (at the central filter frequency) of a 50Ω microstrip line in the considered substrate. The key novel and advantageous aspect of the reported filters is their small size, which is related to the small electrical size of CSRs. Another advantage is frequency selectivity, which is due to the presence of a transmission zero at both edges of the pass band. The limitative aspect is their relatively small unloaded quality factor (Qu), this being attributed to the small dimensions of the considered resonators. These CSR-based devices can be of interest in those applications where size and frequency selectivity are the most severe requirements.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117027929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633297
T. Boles, J. Brogle, A. Rozbicki
A monolithic high power, high linearity, broadband, PIN diode switch capable of handling greater than 1000 watts of pulsed peak RF power has been designed and developed using a patented glass/silicon technology. This technology designated HMIC, Heterolithic Microwave Integrated Circuit, has been developed for various mixed signal and control circuit function applications ranging from HF through microwave frequencies. The unique design and fabrication techniques required for the needed improvements in thermal resistance and peak-to-peak voltage handling of this high power switch are discussed in detail. In addition, the results of this development effort in terms of standard switch parameters; insertion loss, isolation, return loss, and power handling are presented in the following paper.
{"title":"A monolithic, 1000 watt SPDT switch","authors":"T. Boles, J. Brogle, A. Rozbicki","doi":"10.1109/MWSYM.2008.4633297","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633297","url":null,"abstract":"A monolithic high power, high linearity, broadband, PIN diode switch capable of handling greater than 1000 watts of pulsed peak RF power has been designed and developed using a patented glass/silicon technology. This technology designated HMIC, Heterolithic Microwave Integrated Circuit, has been developed for various mixed signal and control circuit function applications ranging from HF through microwave frequencies. The unique design and fabrication techniques required for the needed improvements in thermal resistance and peak-to-peak voltage handling of this high power switch are discussed in detail. In addition, the results of this development effort in terms of standard switch parameters; insertion loss, isolation, return loss, and power handling are presented in the following paper.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123606028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632955
S. Gupta, C. Caloz, S. Abielmona
A novel real-time spectrum analyzer (RTSA) is presented. This RTSA exploits the frequency-space mapping property of the composite right/left handed (CRLH) leaky-wave structure to generate spectrograms with unrestricted time-frequency resolution, not available in current competing systems. Moreover, it exhibits the advantages of low computational burden, frequency scalability and broadband (UWB) operation. The system is demonstrated by both full-wave analysis and experiments for various test signals.
{"title":"CRLH leaky-wave real-time spectrum analyzer (RTSA) with unrestricted time-frequency resolution","authors":"S. Gupta, C. Caloz, S. Abielmona","doi":"10.1109/MWSYM.2008.4632955","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632955","url":null,"abstract":"A novel real-time spectrum analyzer (RTSA) is presented. This RTSA exploits the frequency-space mapping property of the composite right/left handed (CRLH) leaky-wave structure to generate spectrograms with unrestricted time-frequency resolution, not available in current competing systems. Moreover, it exhibits the advantages of low computational burden, frequency scalability and broadband (UWB) operation. The system is demonstrated by both full-wave analysis and experiments for various test signals.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122089861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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