Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733477
Shailesh Mishra, Sushrut Das, S. S. Pattnaik
In this paper, the design of Substrate Integrated Waveguide (SIW) resonant slot antenna to operate in V-band applications has been realized. The basic structure of unit cell has been designed over Rogers RT/duroid 5880 dielectric substrate with dielectric constant of 2.2, loss tangent 0.0009 and with a thickness of 0.508mm. Multiple element array effects have been studied and analyzed using Ansoft HFSS full wave EM Simulator. The design has been supported with its return loss and radiation pattern characteristics to validate V-band operation. The effect of increasing the number of element in arrays has also been analyzed to improve the directivity of the system.
{"title":"Array of SIW resonant slot antenna for V band applications","authors":"Shailesh Mishra, Sushrut Das, S. S. Pattnaik","doi":"10.1109/ICMAP.2013.6733477","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733477","url":null,"abstract":"In this paper, the design of Substrate Integrated Waveguide (SIW) resonant slot antenna to operate in V-band applications has been realized. The basic structure of unit cell has been designed over Rogers RT/duroid 5880 dielectric substrate with dielectric constant of 2.2, loss tangent 0.0009 and with a thickness of 0.508mm. Multiple element array effects have been studied and analyzed using Ansoft HFSS full wave EM Simulator. The design has been supported with its return loss and radiation pattern characteristics to validate V-band operation. The effect of increasing the number of element in arrays has also been analyzed to improve the directivity of the system.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124884618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733505
P. K. Bharti, H. Singh, G. Pandey, M. K. Meshram, H. Tripathi
In this paper, the planar inverted-F antenna (PIFA) is proposed for the multi-band mobile phone application. To reduce the size of the antenna, folded and shorted structure is used. The proposed antenna is compact, low-cost and it is appropriate for the GSM900 (890-960 MHz), GPSL1 (1565-1585 MHz), DCS1800 (1710-1880 MHz), DCS1900 (1850-1990 MHz) DECT (1880-1990 MHz), and UMTS2100 (1920-2170 MHz) cellular mobile phone applications. The peak realized gain of an antenna is around 5.5 dBi at GSM900 band and in between 3-4.8dBi for higher operating bands. The return loss, radiation patterns and peak realized gain of the antenna are simulated using Ansoft HFSS and also compared with CST Microwave Studio results.
{"title":"Compact six-band coupled-fed planar inverted-F antenna for slim mobile phone","authors":"P. K. Bharti, H. Singh, G. Pandey, M. K. Meshram, H. Tripathi","doi":"10.1109/ICMAP.2013.6733505","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733505","url":null,"abstract":"In this paper, the planar inverted-F antenna (PIFA) is proposed for the multi-band mobile phone application. To reduce the size of the antenna, folded and shorted structure is used. The proposed antenna is compact, low-cost and it is appropriate for the GSM900 (890-960 MHz), GPSL1 (1565-1585 MHz), DCS1800 (1710-1880 MHz), DCS1900 (1850-1990 MHz) DECT (1880-1990 MHz), and UMTS2100 (1920-2170 MHz) cellular mobile phone applications. The peak realized gain of an antenna is around 5.5 dBi at GSM900 band and in between 3-4.8dBi for higher operating bands. The return loss, radiation patterns and peak realized gain of the antenna are simulated using Ansoft HFSS and also compared with CST Microwave Studio results.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125080657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733555
Mrinal K. Sen, T. Datta, M. Das
The dependency of effective free carrier lifetime on the lateral dimensions of the Silicon on Insulator (SOI) p-i-n optical rib waveguide has been demonstrated. Effect of reverse bias on the same is also studied. Since carrier generation through two photon absorption is omnipresent in Si, the lifetime of the free carriers plays an important role in determining the net achievable Raman gain in SOI waveguides as it affects nonlinear absorption loss due to free carriers. A detailed analytical model has been derived for the assessment of effective lifetime of free carriers in reverse bias condition in various geometrical features of the waveguide.
{"title":"Effect of geometry and reverse bias on free carrier lifetime in p-i-n structured optical rib waveguide","authors":"Mrinal K. Sen, T. Datta, M. Das","doi":"10.1109/ICMAP.2013.6733555","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733555","url":null,"abstract":"The dependency of effective free carrier lifetime on the lateral dimensions of the Silicon on Insulator (SOI) p-i-n optical rib waveguide has been demonstrated. Effect of reverse bias on the same is also studied. Since carrier generation through two photon absorption is omnipresent in Si, the lifetime of the free carriers plays an important role in determining the net achievable Raman gain in SOI waveguides as it affects nonlinear absorption loss due to free carriers. A detailed analytical model has been derived for the assessment of effective lifetime of free carriers in reverse bias condition in various geometrical features of the waveguide.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126366758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733546
C. Negi, J. Kumar, Dharmendra Kumar, S. Gupta
Multiband detectors have many advantages compared with the single band detectors. In this paper a multi color, broad band infrared detector is proposed and analyzed. This multilayer quantum dot infrared detector utilizes the inter-valence band transitions in the InGaAs quantum dots to achieve the multicolor broad band response. Energy eigen values and wave functions of the hole states are determined by the numerical diagonalization of the Luttinger Kohn Hamiltonian. Absorption spectra is calculated by summing over the absorption due to transition from the heavy hole ground state to the all possible states. Then self-consistent numerical calculation method is used to determine the photocurrent and spectral responsivity of multilayer QDIP.
{"title":"Performance investigations of multicolor, broadband quantum dot infrared photodetector","authors":"C. Negi, J. Kumar, Dharmendra Kumar, S. Gupta","doi":"10.1109/ICMAP.2013.6733546","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733546","url":null,"abstract":"Multiband detectors have many advantages compared with the single band detectors. In this paper a multi color, broad band infrared detector is proposed and analyzed. This multilayer quantum dot infrared detector utilizes the inter-valence band transitions in the InGaAs quantum dots to achieve the multicolor broad band response. Energy eigen values and wave functions of the hole states are determined by the numerical diagonalization of the Luttinger Kohn Hamiltonian. Absorption spectra is calculated by summing over the absorption due to transition from the heavy hole ground state to the all possible states. Then self-consistent numerical calculation method is used to determine the photocurrent and spectral responsivity of multilayer QDIP.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125879117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733524
S. K. Tripathy, V. Kumar
The plane wave pseudo-potential method within density functional theory (DFT) has been used to investigate the structural, electronic and optical properties of ZnGeAs2 chalcopyrite semiconductor. The lattice constants are calculated from the optimized unit cells and compared with the experimental values. The band structure, total density of states (TDOS) and partial density of states (PDOS) have been discussed. The optical properties such as dielectric function, refractive index, optical reflectivity, extinction coefficient, electron energy loss spectrum and absorption spectra have been studied under three different hydrostatic pressures 0, 20 and 40 GPa in the energy range 0-20 eV. The calculated values of all parameters are compared with the available experimental values and the values reported by different workers. A fairly good agreement has been found between them.
{"title":"Theoretical investigations of structural, electronic and optical properties of ZnGeAs2 under different pressures","authors":"S. K. Tripathy, V. Kumar","doi":"10.1109/ICMAP.2013.6733524","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733524","url":null,"abstract":"The plane wave pseudo-potential method within density functional theory (DFT) has been used to investigate the structural, electronic and optical properties of ZnGeAs2 chalcopyrite semiconductor. The lattice constants are calculated from the optimized unit cells and compared with the experimental values. The band structure, total density of states (TDOS) and partial density of states (PDOS) have been discussed. The optical properties such as dielectric function, refractive index, optical reflectivity, extinction coefficient, electron energy loss spectrum and absorption spectra have been studied under three different hydrostatic pressures 0, 20 and 40 GPa in the energy range 0-20 eV. The calculated values of all parameters are compared with the available experimental values and the values reported by different workers. A fairly good agreement has been found between them.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126029600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733487
Prakash Kumar Panda, D. Ghosh
This paper proposes a novel method for reduction of radar cross section (RCS) of systems equipped with arrays of patch antennas. A mushroom like electromagnetic band gap (EBG) structure can be designed to partially cover the array substrate, resulting in RCS reduction at the design frequency. Such RCS reduction may be achieved either at in-band or at out-band frequencies depending on the parameters of the EBG unit cell. It is seen that by proper design the RCS is reduced by around 30 dB as compared to the conventional array antenna without degrading the antenna performance.
{"title":"Mushroom-like EBG structures for reducing RCS of patch antenna arrays","authors":"Prakash Kumar Panda, D. Ghosh","doi":"10.1109/ICMAP.2013.6733487","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733487","url":null,"abstract":"This paper proposes a novel method for reduction of radar cross section (RCS) of systems equipped with arrays of patch antennas. A mushroom like electromagnetic band gap (EBG) structure can be designed to partially cover the array substrate, resulting in RCS reduction at the design frequency. Such RCS reduction may be achieved either at in-band or at out-band frequencies depending on the parameters of the EBG unit cell. It is seen that by proper design the RCS is reduced by around 30 dB as compared to the conventional array antenna without degrading the antenna performance.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124513451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733471
R. Gayen, Sushrut Das
This paper presents, method of moments based analysis of dual slot coupled broad wall slot coupler using Multiple Cavity Modeling Technique (MCMT). Theoretical data for reflection coefficients and transmission coefficients have been obtained. Due to the presence of slots there will be internal mutual coupling between them which has been taken into account. The theoretical data have been compared with Ansoft HFSS's simulated data to validate the proposed method. The excellent agreement obtained between the results validates the analysis.
{"title":"Moment method analysis of dual slot coupled broad wall slot coupler using Multiple Cavity Modeling Technique","authors":"R. Gayen, Sushrut Das","doi":"10.1109/ICMAP.2013.6733471","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733471","url":null,"abstract":"This paper presents, method of moments based analysis of dual slot coupled broad wall slot coupler using Multiple Cavity Modeling Technique (MCMT). Theoretical data for reflection coefficients and transmission coefficients have been obtained. Due to the presence of slots there will be internal mutual coupling between them which has been taken into account. The theoretical data have been compared with Ansoft HFSS's simulated data to validate the proposed method. The excellent agreement obtained between the results validates the analysis.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"185 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133543706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733489
M. Dam, S. Mazumder, M. Biswas
A set of closed form expressions based on cavity model are proposed to investigate the effect of composite and suspended substrate on the input impedance of an equilateral triangular patch antenna (ETPA). The proposed model has been validated employing standard commercial software (HFSS). A comparison of theoretical values for input impedance of an ETPA with that obtained by simulation (HFSS) reveals close proximity with each other for wide range of permittivity and thickness of composite and suspended substrate. Also the computed value of input impedances of ETPA on single substrate is compared with the measured values available in literature. The comparison result is found to be in close agreement with the available experimental results compared to other models available in literature.
{"title":"Accurate CAD model for computation of input impedance of equilateral triangular patch antenna on suspended and composite substrates","authors":"M. Dam, S. Mazumder, M. Biswas","doi":"10.1109/ICMAP.2013.6733489","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733489","url":null,"abstract":"A set of closed form expressions based on cavity model are proposed to investigate the effect of composite and suspended substrate on the input impedance of an equilateral triangular patch antenna (ETPA). The proposed model has been validated employing standard commercial software (HFSS). A comparison of theoretical values for input impedance of an ETPA with that obtained by simulation (HFSS) reveals close proximity with each other for wide range of permittivity and thickness of composite and suspended substrate. Also the computed value of input impedances of ETPA on single substrate is compared with the measured values available in literature. The comparison result is found to be in close agreement with the available experimental results compared to other models available in literature.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"615 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131474512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733536
Ajay Yadav, J. Kumar, P. Biswas, N. Basumallick, S. Bandyopadhyay, K. Dasgupta
In this paper, we compared the sensitivity and response time of polyimide (PI-2525) coated fiber Bragg grating and hydrogel (agarose) coated long period grating in respect to sugar and salt concentration measurement. This hydrogel coated long period grating is used for the first time for measuring sugar and salt concentration and it shows high sensitivity and good response time as compared to fiber Bragg grating based sensor.
{"title":"Comparison between polyimide coated fiber grating and hydrogel coated long period grating for measuring sugar and salt concentration","authors":"Ajay Yadav, J. Kumar, P. Biswas, N. Basumallick, S. Bandyopadhyay, K. Dasgupta","doi":"10.1109/ICMAP.2013.6733536","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733536","url":null,"abstract":"In this paper, we compared the sensitivity and response time of polyimide (PI-2525) coated fiber Bragg grating and hydrogel (agarose) coated long period grating in respect to sugar and salt concentration measurement. This hydrogel coated long period grating is used for the first time for measuring sugar and salt concentration and it shows high sensitivity and good response time as compared to fiber Bragg grating based sensor.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130341496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733552
Senjuti Khanra, A. Barman
This paper proposes a method of linearity analysis of uni-traveling carrier photodiode (UTC-PD) by using an electrical circuit model of the device. Based on this circuit, third order inter-modulation products are investigated by employing two tone input signals. The resulting fundamental, inter-modulation distortion products and the third order intercept point (IP3) agrees well with reported data. The effect of device mounting chip and package parasitic effects on IP3 is investigated in detail. It is shown that the linearity of the device is improved by decreasing the carrier transit time in the absorption layer. It is also found that IP3 decreases with increasing fundamental frequency as experimentally reported.
{"title":"Linearity analysis of uni-traveling carrier photodiode for MM W applications","authors":"Senjuti Khanra, A. Barman","doi":"10.1109/ICMAP.2013.6733552","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733552","url":null,"abstract":"This paper proposes a method of linearity analysis of uni-traveling carrier photodiode (UTC-PD) by using an electrical circuit model of the device. Based on this circuit, third order inter-modulation products are investigated by employing two tone input signals. The resulting fundamental, inter-modulation distortion products and the third order intercept point (IP3) agrees well with reported data. The effect of device mounting chip and package parasitic effects on IP3 is investigated in detail. It is shown that the linearity of the device is improved by decreasing the carrier transit time in the absorption layer. It is also found that IP3 decreases with increasing fundamental frequency as experimentally reported.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123569319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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