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2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)最新文献

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Hydrodynamic thermal transport in suspended graphene ribbons 悬浮石墨烯带中的流体动力热输运
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117364
A. Majee, Z. Akšamija
The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely studied, both theoretically [4] and experimentally [1], with an intense focus on 2-dimensional materials such as graphene and graphene nanoribbons (GNRs) in recent years. The effect of ribbon size (width and length) and temperature on steady-state thermal conductivity is now well understood. On the other hand, fast transients and frequency response of thermal conduction, sometimes called dynamical thermal conductivity has been given less attention. The response of thermal conductivity to rapidly varying heat sources may become more crucial in the future, especially with the constant growth in the clock frequencies in microprocessors and increase in giga- and terahertz applications of semiconductor devices. It has been theoretically predicted in 3-D materials that thermal conductivity in response to a time-varying temperature gradient starts decaying when the frequency of the applied heat source (Ω) exceeds a certain cut-off frequency üc, which was found to be related to the inverse of the average phonon relaxation time TC. The phonon relaxation time in bulk semiconductors such as silicon is short, on the order of 2–10 ps, leading to thermal conductivity that is independent of frequency up to very high iic exceeding 10 GHz. In contrast, 2-D materials like graphene have much longer phonon relaxation times, especially below room temperature. Therefore, in suspended graphene and wide graphene ribbons, Ω c can be expected to be much lower than that of silicon. Moreover, the presence of strong momentum-conserving normal phonon-phonon processes, overshadowing the momentum-destroying umklapp processes in graphene results in hydrodynamic transport [2] where heat does not diffuse but rather propagates in a wavelike fashion, giving rise to the second sound phenomenon[7].
块体和纳米结构半导体的稳态热输运行为已经得到了广泛的理论研究[4]和实验研究[1],近年来主要集中在石墨烯和石墨烯纳米带(gnr)等二维材料上。条带尺寸(宽度和长度)和温度对稳态热导率的影响现在已经很好地理解了。另一方面,热传导的快速瞬态和频率响应,有时也称为动态导热,却很少受到关注。热导率对快速变化热源的响应在未来可能变得更加重要,特别是随着微处理器时钟频率的不断增长以及半导体器件中千兆和太赫兹应用的增加。在三维材料中已经从理论上预测了当施加热源的频率(Ω)超过一定的截止频率 c时,响应时变温度梯度的导热系数开始衰减,这与平均声子弛豫时间TC的倒数有关。在硅等块状半导体中,声子弛豫时间很短,约为2 - 10ps,导致导热性与频率无关,最高可达10ghz以上。相比之下,像石墨烯这样的二维材料的声子弛豫时间要长得多,尤其是在室温以下。因此,在悬浮石墨烯和宽石墨烯带中,Ω c可以预期比硅低得多。此外,石墨烯中存在的强动量守恒的正常声子-声子过程掩盖了动量破坏的umklapp过程,导致流体动力输运[2],其中热量不会扩散,而是以波状方式传播,从而产生第二种声音现象[7]。
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引用次数: 0
Experimental study on helical propulsion system of artificial nanoswimmer: Low reynolds number 人工纳米游泳者螺旋推进系统的实验研究:低雷诺数
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117279
Paul Varghese, S. Nain, J. Rathore, N. N. Sharma
Development in the field of nanotechnology makes possible the production of nanorobots and its usage inside the human body for various biomedical applications. Introducing a nanorobot inside a human body faces various challenges. One of the major challenges is its propulsion mechanism. Since the flow regime is of low Reynolds number, normal propulsion systems would find itself impossible to produce net forward thrust in such media. A rigid helix is found to produce thrust force and is a perfect place to start with in low Reynolds number propulsion. In this paper, a set of helical flagella has been fabricated in macro domain and the effect of change of wavelength, wire diameter and helix diameter is investigated on the thrust force produced by rigid helical filament using Resistive Force Theory.
纳米技术领域的发展使纳米机器人的生产及其在人体内的各种生物医学应用成为可能。将纳米机器人引入人体面临着各种各样的挑战。其中一个主要的挑战是它的推进机制。由于流型是低雷诺数的,一般的推进系统在这种介质中不可能产生净向前推力。刚性螺旋可以产生推力,是低雷诺数推进的理想起点。本文在宏观上制备了一组螺旋鞭毛,并利用阻力理论研究了波长、丝径和螺旋直径的变化对刚性螺旋长丝产生推力的影响。
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引用次数: 1
A flexible transparent nanopore device for pressure sensing and drug release 一种用于压力传感和药物释放的柔性透明纳米孔装置
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117491
Chao Song, Pan Deng, L. Que
This paper reports a newly developed flexible nanopore device for both drug release and pressure sensing for the first time. Different from our previously reported drug release device based on the nanopore thin film fabricated on rigid substrates [1], this new flexible device not only can serve as a drug delivery device, but also can be used as a pressure sensor as well. Specifically, the periodically distributed honeycomb-shape nanopores can store the drugs, facilitating the extended drug release. In addition, the applied pressure on the device deforms the shape and interspace among the nanopores, as a result, the reflected optical interference fringes from the device shift, which is used as a pressure transducing signal.
本文报道了一种新型的柔性纳米孔药物释放和压力传感装置。与我们之前报道的基于刚性基板上纳米孔薄膜的药物释放装置不同[1],这种新型柔性装置不仅可以作为药物释放装置,还可以作为压力传感器使用。具体而言,周期性分布的蜂窝状纳米孔可以储存药物,促进药物的延长释放。此外,施加在器件上的压力使纳米孔之间的形状和间距发生变形,从而使器件反射的光干涉条纹发生位移,作为压力传感器信号。
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引用次数: 1
Fabrication of nanoscale features on ultra-thin glass-based dielectrics via self-masking and preferential etching to enhance capacitance 利用自掩膜和优先蚀刻技术在超薄玻璃基介电体上制备纳米级特征以增强电容
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117494
Amoghavarsha Mahadevegowda, C. Johnston, P. Grant
Flexible capacitors based on ultra-thin glass (30 μm thick) were fabricated and the effect of nanoscale surface modification on the dielectric properties was studied. The ultra-thin glass samples were partially masked by the deposition and self-organisation of Ag-islands and then preferentially etched to produce a controlled topography. The etching duration was varied and its effect on Ag content and dielectric properties were studied by employing atomic force microscopy (AFM), scanning electron microscopy and energy-dispersive X-ray spectroscopy (SEM-EDS), and impedance spectroscopy. The AFM studies revealed the presence of nanoscale ‘peaks’, which were distributed across the surface of the glass, that following etching showed enhanced capacitance. Surface modification of glass using self-organised nano-scale metal island masks is shown to be an effective route to enhance the use of ultra-thin glass in capacitor applications.
制备了30 μm厚超薄玻璃柔性电容器,研究了纳米级表面改性对其介电性能的影响。超薄玻璃样品被ag岛的沉积和自组织部分掩盖,然后优先蚀刻以产生受控的地形。采用原子力显微镜(AFM)、扫描电镜、能量色散x射线能谱(SEM-EDS)和阻抗谱研究了不同刻蚀时间对银含量和介电性能的影响。AFM研究揭示了纳米级“峰”的存在,这些峰分布在玻璃表面,蚀刻后显示出增强的电容。利用自组织纳米级金属岛掩膜对玻璃进行表面改性是提高超薄玻璃在电容器应用中的应用的有效途径。
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引用次数: 0
Synthesis of functional ceramic nanocrystals (SiC, TiC, TiN) by arc-discharge plasma process 电弧放电等离子体法制备功能陶瓷纳米晶(SiC, TiC, TiN)
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117328
Jian Gao, Jieyi Yu, Shanshan Lu, Jingshuang Liang, Wenfei Yang, Zi-ming Wang, Xinglong Dong
Ceramic nanomaterials are attractive due to the functional properties such as optical, electronic, thermal behaviors as well biocompatibility. In this work three kinds of functional ceramic nanocrystals, i.e. SiC (hexagonal platelet-like), TiC (truncated-octahedral) and TiN (cubic structured) were synthesized by a facial DC arc-discharge plasma process. Preparation atmospheres were chosen for the certain ceramic nanocrystals, e.g. source gases (CH4 and N2), inert gas (Ar) and active gas (H2) were employed to tailor the ceramic species and their morphology and size. Taking SiC nanocrystals as an example, the formation mechanism was discussed with experimental results of optical emission spectroscopy (OES) diagnoses.
陶瓷纳米材料因其光学、电子、热性能和生物相容性等功能特性而受到广泛关注。本文采用面形直流电弧放电等离子体工艺合成了三种功能陶瓷纳米晶体,即SiC(六方片状)、TiC(截断八面体)和TiN(立方结构)。采用不同的制备气氛,如源气体(CH4和N2)、惰性气体(Ar)和活性气体(H2),来调整陶瓷的种类、形貌和尺寸。以碳化硅纳米晶为例,结合发射光谱(OES)诊断的实验结果,探讨了其形成机理。
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引用次数: 0
Effects of the growth parameters on the hydrothermal synthesis of ZnO nano-rods and their application to GaN based LEDs 生长参数对水热合成ZnO纳米棒及其在GaN基led中的应用的影响
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117402
In Yeol Hong, Y. Cha, Tae Kyoung Kim, Seung kyu Oh, J. Kwak
Accurate growth control is required to apply ZnO nanorods to devices and materials. This study examined the effects of the growth parameters, such as pressure, growth temperature, growth time, and concentration of the growth solution. The pressure had little influence on ZnO growth. The growth temperature increased length of ZnO nanorods but not affected diameter of ZnO nanorods. The concentration of the growth solution increased the length and diameter of ZnO nanorods. The growth time affected only length of the ZnO nanorods. We confirmed the effect of ZnO nanorods growth parameters successfully and control is possible. The LEDs with ZnO nanorods exhibited improved light extraction efficiency due to the wave manipulation by the ZnO nanorods.
将ZnO纳米棒应用于器件和材料需要精确的生长控制。本研究考察了生长参数,如压力、生长温度、生长时间和生长溶液浓度的影响。压力对ZnO的生长影响不大。生长温度增加了ZnO纳米棒的长度,但不影响ZnO纳米棒的直径。生长溶液的浓度增加了ZnO纳米棒的长度和直径。生长时间只影响ZnO纳米棒的长度。我们成功地证实了ZnO纳米棒生长参数的影响,并且控制是可能的。由于ZnO纳米棒对光波的操纵,ZnO纳米棒的发光二极管具有更高的光提取效率。
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引用次数: 1
The characterization of defects states and charge injection barriers in perovskite solar cells 钙钛矿太阳能电池中缺陷态和电荷注入势垒的表征
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117404
F. Lan, Minlin Jiang, Guangyong Li
The power conversion efficiency of perovskite solar cells has exceeded 22% within a few years. To further optimize their performance, the focus should be on minimizing the defects and barriers in the devices. In this work, Kelvin probe force microscopy (KPFM) together with admittance spectroscopy (AS) is utilized in the characterization of charge injection barriers and defects states in perovskite solar cells. Our measurements indicate that perovskite has a defect level of 0.25 eV above its valance band. In addition, charge injection barriers are present in the interface between electron transporting layer (ETL) and perovskite layer. To improve the performance, passivation technique is needed for the removal of defects and charge injection barriers which could act as recombination centers in perovskite solar cells.
钙钛矿太阳能电池的功率转换效率在几年内已超过22%。为了进一步优化其性能,重点应放在最小化器件中的缺陷和障碍上。在这项工作中,开尔文探针力显微镜(KPFM)和导纳光谱(AS)被用于钙钛矿太阳能电池的电荷注入势垒和缺陷状态的表征。我们的测量表明,钙钛矿的缺陷水平高于其价带0.25 eV。此外,在电子传递层(ETL)和钙钛矿层之间的界面上存在电荷注入势垒。为了提高钙钛矿太阳能电池的性能,需要采用钝化技术去除钙钛矿太阳能电池中作为复合中心的缺陷和电荷注入障碍。
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引用次数: 2
Role of halide anions in perovskite/graphene oxide photovoltaics 卤化物阴离子在钙钛矿/氧化石墨烯光伏中的作用
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117400
Muge Acik, S. Sankaranarayanan, R. Rosenberg
Smart device designs with cheap materials and simple processing methods are necessary for cost-effective and efficient solar cell manufacturing. Methylammonium lead halides (MAPbTx, T = I, Br, Cl) perovskites are promising photovoltaic materials, with high power conversion efficiency (PCE>22%). Perovskite instability, however, has been one of the major obstacles for achieving device performance. Another challenge is the uncontrolled chemistry at the interfaces of the electron/hole transporting layers that limit device function. In order to facilitate an efficient charge transport, graphene-derived nanomaterials made from graphene oxide (GO) and reduced graphene oxide (RGO) have replaced metal oxides and polymers. Overcoming the variation in PCE due to the presence of defects at the interfaces of GO and MAPbTx remains a challenge. Therefore, understanding the fundamental nature of defects is necessary to identify the root cause of device performance failure. In order to investigate interfacial defect modification, we utilize an in situ spectroscopy characterization approach to study chemical interactions at GO/MAPbTx interfaces. We find that halide anions of the perovskite precursors determine defect nucleation in GO, and thereby the growth mechanism. These results demonstrate the need for interface characterization to improve the reliability of perovskite photovoltaics.
廉价材料和简单加工方法的智能设备设计是成本效益和高效太阳能电池制造的必要条件。甲基铵卤化铅(MAPbTx, T = I, Br, Cl)钙钛矿具有较高的功率转换效率(PCE>22%),是一种很有前途的光伏材料。然而,钙钛矿的不稳定性一直是实现器件性能的主要障碍之一。另一个挑战是电子/空穴传输层界面上不受控制的化学反应,这限制了器件的功能。为了促进有效的电荷传输,由氧化石墨烯(GO)和还原氧化石墨烯(RGO)制成的石墨烯衍生纳米材料已经取代了金属氧化物和聚合物。克服由于氧化石墨烯和MAPbTx接口存在缺陷而导致的PCE变化仍然是一个挑战。因此,了解缺陷的基本性质对于确定设备性能失效的根本原因是必要的。为了研究界面缺陷修饰,我们利用原位光谱表征方法研究GO/MAPbTx界面的化学相互作用。我们发现钙钛矿前驱体的卤化物阴离子决定了氧化石墨烯中的缺陷成核,从而决定了生长机制。这些结果表明需要界面表征来提高钙钛矿光伏电池的可靠性。
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引用次数: 0
Development and characterization of nanoparticles as imaging probes for correlative optical and electron microscopy 相关光学和电子显微镜成像探针纳米粒子的研制与表征
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117452
Prem S. Thapa-Chetri, Carolina M. Santiago-Robles, N. Martinez-Rivera, I. Torres-Vazquez, V. Joshi, R. Powell, E. Rosa-Molinar
Nanoparticles of several different compositions and lattice structures that have been characterized by transmission electron microscopy, scanning/transmission electron microscopy, X-ray spectroscopic (EDX) analysis, and diffraction patterns may be conjugated to biological targeting agents for use as labels that can localize and differentiate multiple targets at nanometer resolution in complex biological specimens. Small (most 0.8–3.0 nm) particles composed of iron oxide/carbon, gold, iridium and bismuth/silica may be differentiated by both EDX and diffraction patterns and offer the following advantages over conventional colloidal gold labeling: smaller probe size and faster specimen penetration, higher labeling precision, higher, more consistent labeling density, and nearer quantitative labeling. The combination of small probe size and number of compositions available affords increased multiplexing capability.
通过透射电子显微镜,扫描/透射电子显微镜,x射线光谱(EDX)分析和衍射图表征的几种不同成分和晶格结构的纳米颗粒可以缀合到生物靶向剂上,作为标记,可以在复杂的生物标本中以纳米分辨率定位和区分多个靶标。由氧化铁/碳、金、铱和铋/二氧化硅组成的小颗粒(大多数为0.8-3.0 nm)可以通过EDX和衍射模式进行区分,并且与传统的胶体金标记相比具有以下优点:探针尺寸更小,样品穿透速度更快,标记精度更高,标记密度更高,更一致,更接近定量标记。小探针尺寸和可用组合物数量的结合提供了增加的多路复用能力。
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引用次数: 0
Multi-bit memories fabricated through mechanical and plasma induced deformation of layered semiconductors 利用层状半导体的机械和等离子体诱导变形制备多比特存储器
Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117396
Mikai Chen, Xiaogan Liang
To realize hardware-based artificial intelligence (AI) systems for practical applications, it is necessary to create new memory devices with multiple (or analog-tunable) long-lasting memory states.[1] In our work, we identify that the interlayer deformation in layered semiconductors can form multiple long-lasting, metastable charge-trapping states, which can be exploited to fabricate memory transistors with multi-bit data storage states. We have demonstrated that both plasma treatment and mechanical shear exfoliation can be used to generate such charge-trapping states, and the fabricated MoS2 and WSe2 memory transistors have 2-bit and 3-bit data storage states with year- and day-scale retention times, respectively. This work advances the scientific and technical knowledge for manipulating charge memory states in layered materials and producing multi-bit memory components.
为了实现基于硬件的人工智能(AI)系统的实际应用,有必要创建具有多个(或模拟可调)持久记忆状态的新存储设备。[1]在我们的工作中,我们发现层状半导体中的层间变形可以形成多个持久的、亚稳态的电荷捕获状态,这可以用来制造具有多比特数据存储状态的存储晶体管。我们已经证明,等离子体处理和机械剪切剥离都可以用来产生这种电荷捕获状态,并且制备的MoS2和WSe2存储晶体管分别具有2位和3位的数据存储状态,其保留时间分别为一年和一天。这项工作为控制层状材料中的电荷存储状态和生产多比特存储元件提供了科学和技术知识。
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引用次数: 0
期刊
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)
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