Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117463
Ahmed O. Nasif, M. Mahfuz
In this paper, we focus on the possibilities of using bionanomachines to treat neuronal (brain) disorders. Neuronal networks in the brain are an excellent example of nanonetworks that control all major functions of a human body, thereby offering a sound physical and mental health of a human being. In the brain, approximately one hundred billion neurons are connected three-dimensionally with other neurons in order to form immensely complex neuronal nanonetworks. Therefore, there are trillions of connections that exist among neurons in the brain. When neurons get damaged due to disease or accidents, they affect specific human body functions. It has been found that bionanomachines could interact with neurons in brain nanonetworks and thus help treat brain disorders. This paper describes an approach to detect and remedy neural disorders using bionanomachines. We propose the deployment of a swarm of bionanomachines in the brain that can collectively detect synaptic dysfunctions and mitigate it by injecting excitatory therein. Combinatorial enumeration is explored as a potential tool that can allow us to characterize the requirements on detection capabilities of a single nanobiomachine, as well as of the swarm.
{"title":"An approach to detect and mitigate neural disorders using swarm of bionanomachines","authors":"Ahmed O. Nasif, M. Mahfuz","doi":"10.1109/NANO.2017.8117463","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117463","url":null,"abstract":"In this paper, we focus on the possibilities of using bionanomachines to treat neuronal (brain) disorders. Neuronal networks in the brain are an excellent example of nanonetworks that control all major functions of a human body, thereby offering a sound physical and mental health of a human being. In the brain, approximately one hundred billion neurons are connected three-dimensionally with other neurons in order to form immensely complex neuronal nanonetworks. Therefore, there are trillions of connections that exist among neurons in the brain. When neurons get damaged due to disease or accidents, they affect specific human body functions. It has been found that bionanomachines could interact with neurons in brain nanonetworks and thus help treat brain disorders. This paper describes an approach to detect and remedy neural disorders using bionanomachines. We propose the deployment of a swarm of bionanomachines in the brain that can collectively detect synaptic dysfunctions and mitigate it by injecting excitatory therein. Combinatorial enumeration is explored as a potential tool that can allow us to characterize the requirements on detection capabilities of a single nanobiomachine, as well as of the swarm.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126227215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117325
Kota V. M. K. Kireeti, N. Jha
Surface functional groups present on the SWCNT carbon support was modified and its effects on methanol oxidation reaction (MOR) was studied. The surface functionality is tailored using controlled acid and base treatment. Acid treatment leads to the attachment of carboxylic carbon (CC) fragments to SWCNT making it hydrophilic (P3-SWCNT). Base treatment of P3-SWCNT with 0.05 M NaOH reduces the CCs and makes it hydrophobic (P33-SWCNT). Platinum nanoparticle catalyst supported on the P3-SWCNT possesses enhanced MOR than that of Pt supported on P33-SWCNT. The high amount hydroxyl groups present on P3-SWCNT allow the surface coverage of -OH groups on Pt catalyst thereby providing more active sites for MOR.
{"title":"Functionality modification of SWCNT for improved methanol oxidation reaction","authors":"Kota V. M. K. Kireeti, N. Jha","doi":"10.1109/NANO.2017.8117325","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117325","url":null,"abstract":"Surface functional groups present on the SWCNT carbon support was modified and its effects on methanol oxidation reaction (MOR) was studied. The surface functionality is tailored using controlled acid and base treatment. Acid treatment leads to the attachment of carboxylic carbon (CC) fragments to SWCNT making it hydrophilic (P3-SWCNT). Base treatment of P3-SWCNT with 0.05 M NaOH reduces the CCs and makes it hydrophobic (P33-SWCNT). Platinum nanoparticle catalyst supported on the P3-SWCNT possesses enhanced MOR than that of Pt supported on P33-SWCNT. The high amount hydroxyl groups present on P3-SWCNT allow the surface coverage of -OH groups on Pt catalyst thereby providing more active sites for MOR.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128123157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117301
Lin Li, Zihan Zhang, Chunhong Chen
This paper presents a novel design of ternary full adder (TFA) using hybrid single-electron transistor (SET) and MOS technology. The proposed circuit is evaluated using the Cadence Spectre simulator with 180nm CMOS technology and SET macro models under various test conditions. Results show that the proposed TFA dramatically reduces the number of transistors required with little or no loss in energy efficiency.
{"title":"An area-efficient ternary full adder using hybrid SET-MOS technology","authors":"Lin Li, Zihan Zhang, Chunhong Chen","doi":"10.1109/NANO.2017.8117301","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117301","url":null,"abstract":"This paper presents a novel design of ternary full adder (TFA) using hybrid single-electron transistor (SET) and MOS technology. The proposed circuit is evaluated using the Cadence Spectre simulator with 180nm CMOS technology and SET macro models under various test conditions. Results show that the proposed TFA dramatically reduces the number of transistors required with little or no loss in energy efficiency.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128189448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117308
Xin Tang, Guangfu Wu, K. Lai
We study the optical transitions in mercury chalcogenide colloidal quantum dots (CQDs) by using Fourier transform infrared spectrometer. The optical absorption measurements revealed distinct optical transition processes in mercury telluride (HgTe) CQDs and mercury selenium (HgSe) CQDs. The results show that the spectral absorbance of HgTe CQDs is broadband, which is originated from the interband optical transition between valence band to conduction band, while that of HgSe CQDs is narrowband. And we speculate that the narrowband absorption is resulted from the intraband transition in HgSe CQDs. Furthermore, both the interband energy gaps of HgTe CQDs and intraband energy gaps of HgSe CQDs have been estimated based on the spectral absorbance. The extracted energy gaps are in good agreement with the calculated values by two-band Kroning-Penny model.
{"title":"Interband and intraband optical transitions in mercury chalcogenide colloidal quantum dots","authors":"Xin Tang, Guangfu Wu, K. Lai","doi":"10.1109/NANO.2017.8117308","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117308","url":null,"abstract":"We study the optical transitions in mercury chalcogenide colloidal quantum dots (CQDs) by using Fourier transform infrared spectrometer. The optical absorption measurements revealed distinct optical transition processes in mercury telluride (HgTe) CQDs and mercury selenium (HgSe) CQDs. The results show that the spectral absorbance of HgTe CQDs is broadband, which is originated from the interband optical transition between valence band to conduction band, while that of HgSe CQDs is narrowband. And we speculate that the narrowband absorption is resulted from the intraband transition in HgSe CQDs. Furthermore, both the interband energy gaps of HgTe CQDs and intraband energy gaps of HgSe CQDs have been estimated based on the spectral absorbance. The extracted energy gaps are in good agreement with the calculated values by two-band Kroning-Penny model.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127254731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117487
Kihyun Kim, C. Baek
We investigate the effect of diameter and doping condition on thermal conductivity of vertical nanowires. Vertical silicon nanowire array/spin-on glass (SOG) composite films were fabricated using CMOS technology to extract thermal conductivity of vertical nanowire. The thermal conductivity is reduced by about 27% when diameter is decreased from 350 nm to 190 nm. In addition, boron doped and phosphorus doped nanowires exhibit thermal conductivity of 14.54 Wm−1·K−1 and 17.15 Wm−1·K−1, respectively. Doping method can reduce thermal conductivity of vertical nanowire by up to 70%. Consequently, silicon based thermoelectric devices with highly doped p-type and n-type nanowires were fabricated uniformly. The fabricated devices can be used as a promising thermoelectric power generation and show a Seebeck voltage of 15 mV.
{"title":"Silicon nanowire based thermoelectric device for energy harvesting","authors":"Kihyun Kim, C. Baek","doi":"10.1109/NANO.2017.8117487","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117487","url":null,"abstract":"We investigate the effect of diameter and doping condition on thermal conductivity of vertical nanowires. Vertical silicon nanowire array/spin-on glass (SOG) composite films were fabricated using CMOS technology to extract thermal conductivity of vertical nanowire. The thermal conductivity is reduced by about 27% when diameter is decreased from 350 nm to 190 nm. In addition, boron doped and phosphorus doped nanowires exhibit thermal conductivity of 14.54 Wm−1·K−1 and 17.15 Wm−1·K−1, respectively. Doping method can reduce thermal conductivity of vertical nanowire by up to 70%. Consequently, silicon based thermoelectric devices with highly doped p-type and n-type nanowires were fabricated uniformly. The fabricated devices can be used as a promising thermoelectric power generation and show a Seebeck voltage of 15 mV.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124939675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Atomic Force microscopy (AFM) is a powerful technology for observing and developing the micro/nano world, which has been bringing tremendous revolution opportunities to various fields. An AFM's maneuverability can be enhanced via modification into a nanorobotic system with its scanning probe working as the end-effector. The probe's spatial precision can easily reach to nanometer level, which is commonly actuated by smart materials, typically the piezoceramics. However, instinctive hysteretic characteristics ubiquitously exist in smart material actuators, which degrade their controllable positioning accuracy, especially for the open-loop cases. As common phenomena, input-output hysteretic relations of integrated AFM systems are generally complicated, caused by actuators' specific characteristics. Since the AFM based nanomanipulation requires slow operations to prevent damage from samples and the sharp probe itself, commonly only hysteresis at low frequency (typically less than 10Hz) need to be reduced. To precisely represent and further reduce generalized hysteretic effects at low frequency, this paper proposes the equivalent representation of the classical Preisach model with analytical inversion. The contributions of this paper are: it is the first time that the exact inversion is established for the Preisach model with generalized discrete representation; furthermore, while maintaining modeling accuracy, the new discrete Preisach model significantly reduces model complexity compared to the traditional Preisach model. Numerical verification was conducted to demonstrate the effectiveness of the proposed discrete Preisach model and its analytical inversion.
原子力显微镜(Atomic Force microscopy, AFM)是一项观察和发展微纳米世界的强大技术，它给各个领域带来了巨大的革命性机遇。通过将扫描探针作为末端执行器改造成纳米机器人系统，可以提高原子力显微镜的可操作性。探针的空间精度可以很容易地达到纳米级，这通常是由智能材料，特别是压电陶瓷驱动的。然而，智能材料执行器普遍存在本能滞后特性，这降低了智能材料执行器的可控定位精度，特别是在开环情况下。作为一种普遍现象，集成AFM系统的输入-输出滞后关系通常是复杂的，这是由执行机构的特定特性引起的。由于基于原子力显微镜的纳米操作需要缓慢的操作以防止样品和尖锐探针本身的损坏，因此通常只需要减少低频(通常小于10Hz)的磁滞。为了准确地表示并进一步减小低频下的广义滞后效应，本文提出了经典Preisach模型的解析反演等效表示。本文的贡献是:首次建立了具有广义离散表示的Preisach模型的精确反演;此外，在保持建模精度的同时，与传统的Preisach模型相比，新的离散Preisach模型显著降低了模型的复杂性。数值验证验证了所提出的离散Preisach模型及其解析反演的有效性。
{"title":"Exact inversion of discrete Preisach model for compensating complex hysteresis in AFM based nanomanipulator","authors":"Zhiyong Sun, N. Xi, Yu Cheng, Sheng Bi, Congjian Li, Liangliang Chen","doi":"10.1109/NANO.2017.8117383","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117383","url":null,"abstract":"Atomic Force microscopy (AFM) is a powerful technology for observing and developing the micro/nano world, which has been bringing tremendous revolution opportunities to various fields. An AFM's maneuverability can be enhanced via modification into a nanorobotic system with its scanning probe working as the end-effector. The probe's spatial precision can easily reach to nanometer level, which is commonly actuated by smart materials, typically the piezoceramics. However, instinctive hysteretic characteristics ubiquitously exist in smart material actuators, which degrade their controllable positioning accuracy, especially for the open-loop cases. As common phenomena, input-output hysteretic relations of integrated AFM systems are generally complicated, caused by actuators' specific characteristics. Since the AFM based nanomanipulation requires slow operations to prevent damage from samples and the sharp probe itself, commonly only hysteresis at low frequency (typically less than 10Hz) need to be reduced. To precisely represent and further reduce generalized hysteretic effects at low frequency, this paper proposes the equivalent representation of the classical Preisach model with analytical inversion. The contributions of this paper are: it is the first time that the exact inversion is established for the Preisach model with generalized discrete representation; furthermore, while maintaining modeling accuracy, the new discrete Preisach model significantly reduces model complexity compared to the traditional Preisach model. Numerical verification was conducted to demonstrate the effectiveness of the proposed discrete Preisach model and its analytical inversion.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121902022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117382
J. Best, G. Piazza
Nanoelectromechanical relays show the potential to beat existing CMOS technology in energy efficient computing, but fail to compete in device density [1]. A novel relay is presented as a highly scalable solution that can be used for non-volatile memory. This relay conducts through an anchorless shuttle, actuated by a combination of piezoelectric and electrostatic force, and held in contact through van der Waals surface adhesion, which makes it intrinsically nonvolatile. The relay uses pulsed piezoelectric actuation to enable stable on/off switching and relies on electrostatic actuation as a body bias to reduce actuation voltages to 10s of millivolts. A single degree of freedom model was built to simulate switching events. The pulse-activated piezo shuttle relay is uniquely scalable to a 30 nm cell size and can operate with a switching energy density of 3 fJ/μm2. The pulse-activated piezo shuttle relay is a novel NEMS switch design that offers highly scalable geometry, very low energy consumption, tunable actuation voltages, and intrinsic non-volatility.
{"title":"The pulse-activated piezo-NEMS shuttle relay","authors":"J. Best, G. Piazza","doi":"10.1109/NANO.2017.8117382","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117382","url":null,"abstract":"Nanoelectromechanical relays show the potential to beat existing CMOS technology in energy efficient computing, but fail to compete in device density [1]. A novel relay is presented as a highly scalable solution that can be used for non-volatile memory. This relay conducts through an anchorless shuttle, actuated by a combination of piezoelectric and electrostatic force, and held in contact through van der Waals surface adhesion, which makes it intrinsically nonvolatile. The relay uses pulsed piezoelectric actuation to enable stable on/off switching and relies on electrostatic actuation as a body bias to reduce actuation voltages to 10s of millivolts. A single degree of freedom model was built to simulate switching events. The pulse-activated piezo shuttle relay is uniquely scalable to a 30 nm cell size and can operate with a switching energy density of 3 fJ/μm2. The pulse-activated piezo shuttle relay is a novel NEMS switch design that offers highly scalable geometry, very low energy consumption, tunable actuation voltages, and intrinsic non-volatility.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122757558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117429
S. Rani, S. Hussain, B. C. Mech, J. Kumar
The recombination time for quantum dot infrared photodetectors (QDIPs) for spherical and lens-shaped potential has been compared for variations of different physical parameters such as radius of quantum dots (QDs), capture rate strength and trap concentration. The geometric shape of QDs has a very strong impact on the response of QDIPs. The effect of different shapes such as spherical and lens-shaped potential on the recombination time has been studied. The longer lifetime, i.e, higher recombination time of excited electrons leads to better response, low dark current and large detectivity. QDIPs which have longer carrier lifetimes have an advantage of higher photoconductive gain and higher operating temperatures. As recombination time directly affects the gain of the device, this parameter has been treated with utmost importance.
{"title":"Recombination dynamics in quantum-dot infrared photodetectors with spherical and lens-shaped potential","authors":"S. Rani, S. Hussain, B. C. Mech, J. Kumar","doi":"10.1109/NANO.2017.8117429","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117429","url":null,"abstract":"The recombination time for quantum dot infrared photodetectors (QDIPs) for spherical and lens-shaped potential has been compared for variations of different physical parameters such as radius of quantum dots (QDs), capture rate strength and trap concentration. The geometric shape of QDs has a very strong impact on the response of QDIPs. The effect of different shapes such as spherical and lens-shaped potential on the recombination time has been studied. The longer lifetime, i.e, higher recombination time of excited electrons leads to better response, low dark current and large detectivity. QDIPs which have longer carrier lifetimes have an advantage of higher photoconductive gain and higher operating temperatures. As recombination time directly affects the gain of the device, this parameter has been treated with utmost importance.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123068982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117424
Abouzar Gharajeh, Honglei Wang, Zhitong Li, Jiyoung Moon, R. Haroldson, Balasubramaniam Balachandran, Deyin Zhao, Shih-Chia Liu, Weidong Zhou, S. Makarov, A. Zakhidov, Walter Hu, Q. Gu
Hybrid halide perovskite has made great advances for making new composition of materials, which have wide usage in advanced optoelectronic devices. Here we show amplified spontaneous emission (ASE) in a perovskite nanograting metasurface, defined by the cost effective nanoimprint lithography method which cannot typically be applied to hard, ionic based materials such as perovskite.
{"title":"Amplified spontaneous emission in nanoimprinted perovskite nanograting metasurface","authors":"Abouzar Gharajeh, Honglei Wang, Zhitong Li, Jiyoung Moon, R. Haroldson, Balasubramaniam Balachandran, Deyin Zhao, Shih-Chia Liu, Weidong Zhou, S. Makarov, A. Zakhidov, Walter Hu, Q. Gu","doi":"10.1109/NANO.2017.8117424","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117424","url":null,"abstract":"Hybrid halide perovskite has made great advances for making new composition of materials, which have wide usage in advanced optoelectronic devices. Here we show amplified spontaneous emission (ASE) in a perovskite nanograting metasurface, defined by the cost effective nanoimprint lithography method which cannot typically be applied to hard, ionic based materials such as perovskite.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131296336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117315
Siyang Liu, H. Kim
We have investigated the mechanisms of oxide breakdown in a graphene/SiO2/Si (GOS) capacitor structure under high-field pulsed voltage drive. Four different configurations are analyzed and compared in terms of bias polarity and substrate conductivity type: inversion or accumulation bias on a GOS structure formed on n-Si or p-Si substrate. Electric field distributions in the GOS structure are analyzed under strong bias in the breakdown field regime, and the resulting quantum yield of electron impact ionization is calculated for SiO2 and Si regions. Oxide breakdown is found to occur more readily in inversion bias than in accumulation bias. In the case of n-Si GOS under inversion bias, a cascade of impact ionization occurs, first in SiO2 and then into Si, resulting in explosive melting of Si in the depletion region. In the p-Si GOS case, impact ionization occurs mostly in SiO2 and near SiO2/Si interface. In both cases, strong atomic emission is observed, indicating explosive fragmentation/atomization of SiO2 and Si into atoms/ions in excited states.
{"title":"Impact ionization in a graphene/SiO2/Si structure under high-field pulsed drive","authors":"Siyang Liu, H. Kim","doi":"10.1109/NANO.2017.8117315","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117315","url":null,"abstract":"We have investigated the mechanisms of oxide breakdown in a graphene/SiO2/Si (GOS) capacitor structure under high-field pulsed voltage drive. Four different configurations are analyzed and compared in terms of bias polarity and substrate conductivity type: inversion or accumulation bias on a GOS structure formed on n-Si or p-Si substrate. Electric field distributions in the GOS structure are analyzed under strong bias in the breakdown field regime, and the resulting quantum yield of electron impact ionization is calculated for SiO2 and Si regions. Oxide breakdown is found to occur more readily in inversion bias than in accumulation bias. In the case of n-Si GOS under inversion bias, a cascade of impact ionization occurs, first in SiO2 and then into Si, resulting in explosive melting of Si in the depletion region. In the p-Si GOS case, impact ionization occurs mostly in SiO2 and near SiO2/Si interface. In both cases, strong atomic emission is observed, indicating explosive fragmentation/atomization of SiO2 and Si into atoms/ions in excited states.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130417419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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