Samira Munkaila, Kevin J. Torres, Jennifer Wang and Marcus Weck*,
{"title":"","authors":"Samira Munkaila, Kevin J. Torres, Jennifer Wang and Marcus Weck*, ","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"XXX-XXX XXX-XXX"},"PeriodicalIF":4.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnanoscienceau.5c00007","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144416053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Paul D. Goring, Amelia Newman, Christopher W. Jones* and Shelley D. Minteer*,
{"title":"","authors":"Paul D. Goring, Amelia Newman, Christopher W. Jones* and Shelley D. Minteer*, ","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"XXX-XXX XXX-XXX"},"PeriodicalIF":4.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnanoscienceau.5c00014","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144416027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ariane K. Padilha Lorenzett, Tatiane P. Babinski, Vanderlei A. de Lima and Rubiana M. Mainardes*,
{"title":"","authors":"Ariane K. Padilha Lorenzett, Tatiane P. Babinski, Vanderlei A. de Lima and Rubiana M. Mainardes*, ","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"XXX-XXX XXX-XXX"},"PeriodicalIF":4.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnanoscienceau.4c00057","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144416045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Josselyn Mata Calidonio, Arianna I. Maddox, Dhruvi S. Patel, Jonathan B. Dain, Melba Torres Sosa, Nichola J. Hill* and Kimberly Hamad-Schifferli*,
{"title":"","authors":"Josselyn Mata Calidonio, Arianna I. Maddox, Dhruvi S. Patel, Jonathan B. Dain, Melba Torres Sosa, Nichola J. Hill* and Kimberly Hamad-Schifferli*, ","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"XXX-XXX XXX-XXX"},"PeriodicalIF":4.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnanoscienceau.4c00072","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144416040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-15eCollection Date: 2025-06-18DOI: 10.1021/acsnanoscienceau.5c00015
Mikelis Marnauza, Robin Sjökvist, Azemina Kraina, Daniel Jacobsson, Kimberly A Dick
Combining multiple III-V materials into axial nanowire heterostructures has enabled the fabrication of custom nanowire-based devices useful for a wide range of applications. However, our ability to form axial heterostructures between arbitrary combinations of III-V compounds is impeded by a lack of information on the dynamics of the heterojunction formation process, often resulting in suboptimal heterostructure morphologies, particularly for materials including Sb. In this work, we utilize environmental transmission electron microscopy to examine the formation of GaSb/GaAs heterojunctions in Au-seeded nanowires in situ. We demonstrate that the growth parameter window for successful GaSb/GaAs heterostructure formation is very narrow and requires the growth of a ternary GaSb x As1-x segment. Furthermore, we show that as the nanowire changes the composition from GaSb to GaAs, the nanoparticle and nanowire morphologies are highly dynamic. At the end of the transition, we observe that the nanoparticle volume is halved and the nanowire diameter is reduced from ≈40 to ≈30 nm at the liquid-solid interface. Moreover, the nanowire growth rate increases by a factor of 7, when GaAs composition is reached, at our optimized growth conditions. Additionally, we are able to observe that the change in the crystal phase from GaSb zincblende (ZB) to GaAs wurtzite (WZ) happens via a mixed ZB-4H-WZ regime and is dependent not only on the nanowire composition but also on the vapor-phase composition in the growth chamber. These results offer unique insight into the formation dynamics of axial nanowire heterostructures, elucidating the interplay between all phases and growth species.
将多种III-V材料结合到轴向纳米线异质结构中，可以制造出基于定制纳米线的器件，用于广泛的应用。然而，由于缺乏关于异质结形成过程动力学的信息，我们在III-V化合物的任意组合之间形成轴向异质结构的能力受到阻碍，通常导致非最佳异质结构形态，特别是对于包括Sb在内的材料。在这项工作中，我们利用环境透射电子显微镜来原位检查au种子纳米线中GaSb/GaAs异质结的形成。我们证明了成功形成GaSb/GaAs异质结构的生长参数窗口非常窄，并且需要生长三元GaSb x As1-x段。此外，我们发现，当纳米线的组成从砷化镓转变为砷化镓时，纳米颗粒和纳米线的形态是高度动态的。在过渡结束时，我们观察到纳米颗粒体积减半，液固界面处的纳米线直径从≈40 nm减小到≈30 nm。此外，在我们优化的生长条件下，当达到GaAs成分时，纳米线的生长速度增加了7倍。此外，我们能够观察到从GaSb锌闪锌矿（ZB）到GaAs纤锌矿（WZ）的晶相变化是通过混合ZB- 4h -WZ发生的，并且不仅取决于纳米线的组成，还取决于生长室中的气相组成。这些结果为轴向纳米线异质结构的形成动力学提供了独特的见解，阐明了所有相和生长物种之间的相互作用。
{"title":"<i>In Situ</i> Study of Axial GaSb/GaAs Nanowire Heterostructure Formation.","authors":"Mikelis Marnauza, Robin Sjökvist, Azemina Kraina, Daniel Jacobsson, Kimberly A Dick","doi":"10.1021/acsnanoscienceau.5c00015","DOIUrl":"10.1021/acsnanoscienceau.5c00015","url":null,"abstract":"<p><p>Combining multiple III-V materials into axial nanowire heterostructures has enabled the fabrication of custom nanowire-based devices useful for a wide range of applications. However, our ability to form axial heterostructures between arbitrary combinations of III-V compounds is impeded by a lack of information on the dynamics of the heterojunction formation process, often resulting in suboptimal heterostructure morphologies, particularly for materials including Sb. In this work, we utilize environmental transmission electron microscopy to examine the formation of GaSb/GaAs heterojunctions in Au-seeded nanowires <i>in situ</i>. We demonstrate that the growth parameter window for successful GaSb/GaAs heterostructure formation is very narrow and requires the growth of a ternary GaSb <sub><i>x</i></sub> As<sub>1-<i>x</i></sub> segment. Furthermore, we show that as the nanowire changes the composition from GaSb to GaAs, the nanoparticle and nanowire morphologies are highly dynamic. At the end of the transition, we observe that the nanoparticle volume is halved and the nanowire diameter is reduced from ≈40 to ≈30 nm at the liquid-solid interface. Moreover, the nanowire growth rate increases by a factor of 7, when GaAs composition is reached, at our optimized growth conditions. Additionally, we are able to observe that the change in the crystal phase from GaSb zincblende (ZB) to GaAs wurtzite (WZ) happens via a mixed ZB-4H-WZ regime and is dependent not only on the nanowire composition but also on the vapor-phase composition in the growth chamber. These results offer unique insight into the formation dynamics of axial nanowire heterostructures, elucidating the interplay between all phases and growth species.</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 3","pages":"208-216"},"PeriodicalIF":4.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12183588/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144486218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-27eCollection Date: 2025-04-16DOI: 10.1021/acsnanoscienceau.5c00021
Hannah R Lacey, Kevin D Dobson, Emil A Hernández-Pagán
[This corrects the article DOI: 10.1021/acsnanoscienceau.4c00023.].
[这更正了文章DOI: 10.1021/acsnanoscienceau.4c00023.]。
{"title":"Correction to \"Flexible Cation Exchange Environment via Ligand-Free Metal Chalcogenide Thin Films\".","authors":"Hannah R Lacey, Kevin D Dobson, Emil A Hernández-Pagán","doi":"10.1021/acsnanoscienceau.5c00021","DOIUrl":"https://doi.org/10.1021/acsnanoscienceau.5c00021","url":null,"abstract":"<p><p>[This corrects the article DOI: 10.1021/acsnanoscienceau.4c00023.].</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"111"},"PeriodicalIF":4.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12006850/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143988113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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