Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628225
Y. Furuya
This paper described the wideband CDMA (W-CDMA) system, which has been selected as a strong candidate for next generation cellular systems in Japan. The proposed system can satisfy IMT-2000 system requirement. Basic system performances were confirmed through the field test in Tokyo metropolitan area. Detailed specification work for W-CDMA system has started, since the system has been agreed to be feasible through the field test.
{"title":"W-CDMA: An approach toward next generation mobile radio system, IMT-2000","authors":"Y. Furuya","doi":"10.1109/GAAS.1997.628225","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628225","url":null,"abstract":"This paper described the wideband CDMA (W-CDMA) system, which has been selected as a strong candidate for next generation cellular systems in Japan. The proposed system can satisfy IMT-2000 system requirement. Basic system performances were confirmed through the field test in Tokyo metropolitan area. Detailed specification work for W-CDMA system has started, since the system has been agreed to be feasible through the field test.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133256834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628251
A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, E. Beam
A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.
{"title":"Resonant tunneling circuit technology: has it arrived?","authors":"A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, E. Beam","doi":"10.1109/GAAS.1997.628251","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628251","url":null,"abstract":"A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131256108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628258
T. Henderson
Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.
{"title":"Effects of electrostatic discharge on GaAs-based HBTs","authors":"T. Henderson","doi":"10.1109/GAAS.1997.628258","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628258","url":null,"abstract":"Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124304523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628246
A. Jayaraman, P. Asbeck, K. Nary, S. Beccue, Keh-Chung Wang
A fourth-order bandpass /spl Delta/-/spl Sigma/ modulator with center frequency of 800 MHz designed and fabricated in AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is reported. The modulator can be clocked at a continuum of frequencies from 2-4 GHz. Its performance was characterized at one convenient clock frequency, 3.2 GHz, since clocking the modulator at 4 times the center frequency allows for trivial extraction of in-phase and quadrature components of the bandpass signal in the digital domain. The 1-bit modulator output achieves a signal-to-noise ratio of 66 dB over a 100 kHz bandwidth and 41 dB over a 25 MHz bandwidth (which covers the entire cellular band).
{"title":"Bandpass delta-sigma modulator with 800 MHz center frequency","authors":"A. Jayaraman, P. Asbeck, K. Nary, S. Beccue, Keh-Chung Wang","doi":"10.1109/GAAS.1997.628246","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628246","url":null,"abstract":"A fourth-order bandpass /spl Delta/-/spl Sigma/ modulator with center frequency of 800 MHz designed and fabricated in AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is reported. The modulator can be clocked at a continuum of frequencies from 2-4 GHz. Its performance was characterized at one convenient clock frequency, 3.2 GHz, since clocking the modulator at 4 times the center frequency allows for trivial extraction of in-phase and quadrature components of the bandpass signal in the digital domain. The 1-bit modulator output achieves a signal-to-noise ratio of 66 dB over a 100 kHz bandwidth and 41 dB over a 25 MHz bandwidth (which covers the entire cellular band).","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628256
H. Masuda, K. Ouchi, A. Terano, H. Suzuki, K. Watanabe, T. Oka, H. Matsubara, T. Tanoue
Several techniques that enable high-yield fabrication of high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs were developed. The T-shaped emitter electrode structure provides a simple fabrication process. A highly-C-doped base and a new Pt/Ti/Mo/Ti/Pt/Au metal system result in a thin base and low base resistance. An InP subcollector suppresses thermal runaway at high collector current. Using these techniques, an extremely high cutoff frequency f/sub T/ of 235 GHz was achieved for an HBT, along with a static 1/2 frequency divider operating up to 44 GHz.
{"title":"Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application","authors":"H. Masuda, K. Ouchi, A. Terano, H. Suzuki, K. Watanabe, T. Oka, H. Matsubara, T. Tanoue","doi":"10.1109/GAAS.1997.628256","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628256","url":null,"abstract":"Several techniques that enable high-yield fabrication of high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs were developed. The T-shaped emitter electrode structure provides a simple fabrication process. A highly-C-doped base and a new Pt/Ti/Mo/Ti/Pt/Au metal system result in a thin base and low base resistance. An InP subcollector suppresses thermal runaway at high collector current. Using these techniques, an extremely high cutoff frequency f/sub T/ of 235 GHz was achieved for an HBT, along with a static 1/2 frequency divider operating up to 44 GHz.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129784498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628283
C. Buck, P. Lombardelli, M. J. Pomeroy
Rather than describing a MMIC in detail, this paper focuses on some of the system level issues concerning the integration of MMICs. The system to be described is a MM-wave Broadband Wireless system and is a commercial system where cost plays a crucial role in its success. MMICs can provide a low cost solution but only if they are incorporated in the correct manner. Three aspects of integration are discussed: a suitable low cost transition from waveguide to the MMIC, a method of contacting the MMIC to the transition and low cost housing.
{"title":"GaAs MMICs for cellular broadband wireless infrastructure: a system perspective","authors":"C. Buck, P. Lombardelli, M. J. Pomeroy","doi":"10.1109/GAAS.1997.628283","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628283","url":null,"abstract":"Rather than describing a MMIC in detail, this paper focuses on some of the system level issues concerning the integration of MMICs. The system to be described is a MM-wave Broadband Wireless system and is a commercial system where cost plays a crucial role in its success. MMICs can provide a low cost solution but only if they are incorporated in the correct manner. Three aspects of integration are discussed: a suitable low cost transition from waveguide to the MMIC, a method of contacting the MMIC to the transition and low cost housing.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133682209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A newly developed GaAs MMIC upconverter with an automatic gain control (AGC) amplifier is presented. The circuit is to be used in a 1.9 GHz RF transceiver for the Japanese PHS applications. The features of the upconverter are: (1) on-chip 50 /spl Omega/ impedance matching for all AC input and output signals; (2) a double balanced Gilbert cell and a 2-stage AGC amplifier with matching circuits that provide 23 dB conversion gain, -39 dBc LO suppression, -23 dBc image suppression and 30 dB gain control; (3) Adjacent Channel Power (ACP) of -70 dBc; and (4) a die size of only 2.87 mm/sup 2/ (2.52 mm/spl times/1.14 mm).
{"title":"A high performance GaAs MMIC upconverter with an automatic gain control amplifier","authors":"Huainan Ma, Sher Jiun Fang, Fujiang Lin, Khen-Sang Tan, J. Shibata, Atsushi Tamura, Hiroshi Nakamura","doi":"10.1109/GAAS.1997.628276","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628276","url":null,"abstract":"A newly developed GaAs MMIC upconverter with an automatic gain control (AGC) amplifier is presented. The circuit is to be used in a 1.9 GHz RF transceiver for the Japanese PHS applications. The features of the upconverter are: (1) on-chip 50 /spl Omega/ impedance matching for all AC input and output signals; (2) a double balanced Gilbert cell and a 2-stage AGC amplifier with matching circuits that provide 23 dB conversion gain, -39 dBc LO suppression, -23 dBc image suppression and 30 dB gain control; (3) Adjacent Channel Power (ACP) of -70 dBc; and (4) a die size of only 2.87 mm/sup 2/ (2.52 mm/spl times/1.14 mm).","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133886342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628235
M. Nagaoka, H. Wakimoto, T. Seshita, K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi
A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.
{"title":"Single low voltage supply operation GaAs power MESFET amplifier with low-distortion gain-variable attenuator for 1.9-GHz personal handy phone systems","authors":"M. Nagaoka, H. Wakimoto, T. Seshita, K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi","doi":"10.1109/GAAS.1997.628235","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628235","url":null,"abstract":"A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126801838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628252
M. Leung, J. Spargo, K. Kobayashi, A. Silver
Superconductive electronics offers a unique combination of high bandwidth and low power for mission critical hardware such as digital processors at 20 to 100 GHz, microwatt per bit analog to digital converters, large digital switches at multi-Gb/s data rates, and low noise parametric amplifiers. This cryogenic technology, typically operating at a few degrees or a few tens of degrees Kelvin, depends upon the unique physics of superconducting materials such as Nb, NbN, and YBaCuO, and the fundamental circuit element, the Josephson junction (JJ) to create unique architectures of unprecedented design efficiency and performance. These circuits are based on the single flux quantum (SFQ) logic family, a technology that has no parallel in semiconductor electronics. Digital data is transmitted by voltage pulses with amplitude less than 1 mV, but at extremely high speeds. Individual gates have been operated as high as 370 GHz. In this paper, we present a brief overview of superconductive digital technology, describe some recent circuits, and discuss how the challenges to superconductive technology are being met, including the use of multi-chip module (MCM) technology, and the potential use of III-V HBT and HEMT circuits to provide interface drivers and amplifiers, possibly operated cryogenically.
{"title":"Superconductive electronics-a high speed and low power technology complementing III-V technologies for advanced systems","authors":"M. Leung, J. Spargo, K. Kobayashi, A. Silver","doi":"10.1109/GAAS.1997.628252","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628252","url":null,"abstract":"Superconductive electronics offers a unique combination of high bandwidth and low power for mission critical hardware such as digital processors at 20 to 100 GHz, microwatt per bit analog to digital converters, large digital switches at multi-Gb/s data rates, and low noise parametric amplifiers. This cryogenic technology, typically operating at a few degrees or a few tens of degrees Kelvin, depends upon the unique physics of superconducting materials such as Nb, NbN, and YBaCuO, and the fundamental circuit element, the Josephson junction (JJ) to create unique architectures of unprecedented design efficiency and performance. These circuits are based on the single flux quantum (SFQ) logic family, a technology that has no parallel in semiconductor electronics. Digital data is transmitted by voltage pulses with amplitude less than 1 mV, but at extremely high speeds. Individual gates have been operated as high as 370 GHz. In this paper, we present a brief overview of superconductive digital technology, describe some recent circuits, and discuss how the challenges to superconductive technology are being met, including the use of multi-chip module (MCM) technology, and the potential use of III-V HBT and HEMT circuits to provide interface drivers and amplifiers, possibly operated cryogenically.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126952358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628233
D. Teeter, S. Bouthillette, A. Platzker, A. Forbes, S. Lichwala
The ability of the Gummel Poon model to predict HBT ACPR is investigated. It is shown that with proper parameter extraction, the Gummel Poon model is capable of predicting ACPR for NADC and O-QPSK CDMA. Several examples of measured versus modeled performance are given along with a detailed discussion of the parameter extraction methodology.
{"title":"Prediction of HBT ACPR using the Gummel Poon large signal model","authors":"D. Teeter, S. Bouthillette, A. Platzker, A. Forbes, S. Lichwala","doi":"10.1109/GAAS.1997.628233","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628233","url":null,"abstract":"The ability of the Gummel Poon model to predict HBT ACPR is investigated. It is shown that with proper parameter extraction, the Gummel Poon model is capable of predicting ACPR for NADC and O-QPSK CDMA. Several examples of measured versus modeled performance are given along with a detailed discussion of the parameter extraction methodology.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115630406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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