Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628225
Y. Furuya
This paper described the wideband CDMA (W-CDMA) system, which has been selected as a strong candidate for next generation cellular systems in Japan. The proposed system can satisfy IMT-2000 system requirement. Basic system performances were confirmed through the field test in Tokyo metropolitan area. Detailed specification work for W-CDMA system has started, since the system has been agreed to be feasible through the field test.
{"title":"W-CDMA: An approach toward next generation mobile radio system, IMT-2000","authors":"Y. Furuya","doi":"10.1109/GAAS.1997.628225","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628225","url":null,"abstract":"This paper described the wideband CDMA (W-CDMA) system, which has been selected as a strong candidate for next generation cellular systems in Japan. The proposed system can satisfy IMT-2000 system requirement. Basic system performances were confirmed through the field test in Tokyo metropolitan area. Detailed specification work for W-CDMA system has started, since the system has been agreed to be feasible through the field test.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133256834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628251
A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, E. Beam
A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.
{"title":"Resonant tunneling circuit technology: has it arrived?","authors":"A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, E. Beam","doi":"10.1109/GAAS.1997.628251","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628251","url":null,"abstract":"A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131256108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628258
T. Henderson
Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.
{"title":"Effects of electrostatic discharge on GaAs-based HBTs","authors":"T. Henderson","doi":"10.1109/GAAS.1997.628258","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628258","url":null,"abstract":"Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124304523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628246
A. Jayaraman, P. Asbeck, K. Nary, S. Beccue, Keh-Chung Wang
A fourth-order bandpass /spl Delta/-/spl Sigma/ modulator with center frequency of 800 MHz designed and fabricated in AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is reported. The modulator can be clocked at a continuum of frequencies from 2-4 GHz. Its performance was characterized at one convenient clock frequency, 3.2 GHz, since clocking the modulator at 4 times the center frequency allows for trivial extraction of in-phase and quadrature components of the bandpass signal in the digital domain. The 1-bit modulator output achieves a signal-to-noise ratio of 66 dB over a 100 kHz bandwidth and 41 dB over a 25 MHz bandwidth (which covers the entire cellular band).
{"title":"Bandpass delta-sigma modulator with 800 MHz center frequency","authors":"A. Jayaraman, P. Asbeck, K. Nary, S. Beccue, Keh-Chung Wang","doi":"10.1109/GAAS.1997.628246","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628246","url":null,"abstract":"A fourth-order bandpass /spl Delta/-/spl Sigma/ modulator with center frequency of 800 MHz designed and fabricated in AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is reported. The modulator can be clocked at a continuum of frequencies from 2-4 GHz. Its performance was characterized at one convenient clock frequency, 3.2 GHz, since clocking the modulator at 4 times the center frequency allows for trivial extraction of in-phase and quadrature components of the bandpass signal in the digital domain. The 1-bit modulator output achieves a signal-to-noise ratio of 66 dB over a 100 kHz bandwidth and 41 dB over a 25 MHz bandwidth (which covers the entire cellular band).","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628283
C. Buck, P. Lombardelli, M. J. Pomeroy
Rather than describing a MMIC in detail, this paper focuses on some of the system level issues concerning the integration of MMICs. The system to be described is a MM-wave Broadband Wireless system and is a commercial system where cost plays a crucial role in its success. MMICs can provide a low cost solution but only if they are incorporated in the correct manner. Three aspects of integration are discussed: a suitable low cost transition from waveguide to the MMIC, a method of contacting the MMIC to the transition and low cost housing.
{"title":"GaAs MMICs for cellular broadband wireless infrastructure: a system perspective","authors":"C. Buck, P. Lombardelli, M. J. Pomeroy","doi":"10.1109/GAAS.1997.628283","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628283","url":null,"abstract":"Rather than describing a MMIC in detail, this paper focuses on some of the system level issues concerning the integration of MMICs. The system to be described is a MM-wave Broadband Wireless system and is a commercial system where cost plays a crucial role in its success. MMICs can provide a low cost solution but only if they are incorporated in the correct manner. Three aspects of integration are discussed: a suitable low cost transition from waveguide to the MMIC, a method of contacting the MMIC to the transition and low cost housing.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133682209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A newly developed GaAs MMIC upconverter with an automatic gain control (AGC) amplifier is presented. The circuit is to be used in a 1.9 GHz RF transceiver for the Japanese PHS applications. The features of the upconverter are: (1) on-chip 50 /spl Omega/ impedance matching for all AC input and output signals; (2) a double balanced Gilbert cell and a 2-stage AGC amplifier with matching circuits that provide 23 dB conversion gain, -39 dBc LO suppression, -23 dBc image suppression and 30 dB gain control; (3) Adjacent Channel Power (ACP) of -70 dBc; and (4) a die size of only 2.87 mm/sup 2/ (2.52 mm/spl times/1.14 mm).
{"title":"A high performance GaAs MMIC upconverter with an automatic gain control amplifier","authors":"Huainan Ma, Sher Jiun Fang, Fujiang Lin, Khen-Sang Tan, J. Shibata, Atsushi Tamura, Hiroshi Nakamura","doi":"10.1109/GAAS.1997.628276","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628276","url":null,"abstract":"A newly developed GaAs MMIC upconverter with an automatic gain control (AGC) amplifier is presented. The circuit is to be used in a 1.9 GHz RF transceiver for the Japanese PHS applications. The features of the upconverter are: (1) on-chip 50 /spl Omega/ impedance matching for all AC input and output signals; (2) a double balanced Gilbert cell and a 2-stage AGC amplifier with matching circuits that provide 23 dB conversion gain, -39 dBc LO suppression, -23 dBc image suppression and 30 dB gain control; (3) Adjacent Channel Power (ACP) of -70 dBc; and (4) a die size of only 2.87 mm/sup 2/ (2.52 mm/spl times/1.14 mm).","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133886342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628256
H. Masuda, K. Ouchi, A. Terano, H. Suzuki, K. Watanabe, T. Oka, H. Matsubara, T. Tanoue
Several techniques that enable high-yield fabrication of high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs were developed. The T-shaped emitter electrode structure provides a simple fabrication process. A highly-C-doped base and a new Pt/Ti/Mo/Ti/Pt/Au metal system result in a thin base and low base resistance. An InP subcollector suppresses thermal runaway at high collector current. Using these techniques, an extremely high cutoff frequency f/sub T/ of 235 GHz was achieved for an HBT, along with a static 1/2 frequency divider operating up to 44 GHz.
{"title":"Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application","authors":"H. Masuda, K. Ouchi, A. Terano, H. Suzuki, K. Watanabe, T. Oka, H. Matsubara, T. Tanoue","doi":"10.1109/GAAS.1997.628256","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628256","url":null,"abstract":"Several techniques that enable high-yield fabrication of high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs were developed. The T-shaped emitter electrode structure provides a simple fabrication process. A highly-C-doped base and a new Pt/Ti/Mo/Ti/Pt/Au metal system result in a thin base and low base resistance. An InP subcollector suppresses thermal runaway at high collector current. Using these techniques, an extremely high cutoff frequency f/sub T/ of 235 GHz was achieved for an HBT, along with a static 1/2 frequency divider operating up to 44 GHz.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129784498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628284
E. Suematsu, M. Yagura, A. Yamada, K. Kishimoto, Yu Zhu, J. Twynam, K. Sakuno, T. Hasegawa, M. Hasegawa, H. Sato
A subharmonically injection-locked MMIC harmonic VCO for use as a synthesized local oscillator in the 60 GHz band has been experimentally investigated. The designs using HBT MMICs are based on the use of 2nd subharmonic injection locking of the harmonic VCOs to upconvert to millimeter-wave frequency and broaden the locking range. The use of the 4th harmonic signal from the VCOs allows a factor of eight increase in the locking range. The transmission type injection-locked MMIC VCO with the refractive type load circuit increases not only the locking range, but also the high-order harmonic output power in the locked VCO output.
{"title":"Millimeter-wave HBT MMIC synthesizers using subharmonically injection-locked oscillators","authors":"E. Suematsu, M. Yagura, A. Yamada, K. Kishimoto, Yu Zhu, J. Twynam, K. Sakuno, T. Hasegawa, M. Hasegawa, H. Sato","doi":"10.1109/GAAS.1997.628284","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628284","url":null,"abstract":"A subharmonically injection-locked MMIC harmonic VCO for use as a synthesized local oscillator in the 60 GHz band has been experimentally investigated. The designs using HBT MMICs are based on the use of 2nd subharmonic injection locking of the harmonic VCOs to upconvert to millimeter-wave frequency and broaden the locking range. The use of the 4th harmonic signal from the VCOs allows a factor of eight increase in the locking range. The transmission type injection-locked MMIC VCO with the refractive type load circuit increases not only the locking range, but also the high-order harmonic output power in the locked VCO output.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125022902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628248
R. Savarã
A monolithic 2.125GB/s per port 64/spl times/33 crosspoint switch IC has been designed, fabricated, and tested. A 0.6 um enhancement/depletion, recessed gate GaAs process was chosen for this product, which offers high speed devices with low power dissipation. The design used SCFL (Source Coupled FET Logic) standard cells for the switch matrix. All the data path signals use standard differential PECL input and output levels to maintain precision pulse width characteristics. The control signals, are in TTL levels. The high speed data inputs are DC biased allowing AC coupled operation. The switch offers non-blocking programming, and can be configured prior to enabling the outputs for synchronous reprogramming and operation from a single +5V supply.
{"title":"A high speed and high precision 64/spl times/33 crosspoint switch IC","authors":"R. Savarã","doi":"10.1109/GAAS.1997.628248","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628248","url":null,"abstract":"A monolithic 2.125GB/s per port 64/spl times/33 crosspoint switch IC has been designed, fabricated, and tested. A 0.6 um enhancement/depletion, recessed gate GaAs process was chosen for this product, which offers high speed devices with low power dissipation. The design used SCFL (Source Coupled FET Logic) standard cells for the switch matrix. All the data path signals use standard differential PECL input and output levels to maintain precision pulse width characteristics. The control signals, are in TTL levels. The high speed data inputs are DC biased allowing AC coupled operation. The switch offers non-blocking programming, and can be configured prior to enabling the outputs for synchronous reprogramming and operation from a single +5V supply.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122735914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628237
M. LaMacchla, J. Abrokwah, B. Bernhardt, B. Crawforth, B. Mathes, T. McGuire, T. Weatherford
The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K transistor complexity have been demonstrated on CGaAs/sup TM/ wafers with the LTG layer.
{"title":"Radiation hardened complementary GaAs(CGaAs/sup TM/)","authors":"M. LaMacchla, J. Abrokwah, B. Bernhardt, B. Crawforth, B. Mathes, T. McGuire, T. Weatherford","doi":"10.1109/GAAS.1997.628237","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628237","url":null,"abstract":"The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K transistor complexity have been demonstrated on CGaAs/sup TM/ wafers with the LTG layer.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"03 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129275009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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