Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628269
R. Hickling, R. A. Kot, M. Yagi, R. Nagarajan, W. Sha, R. Craig
A single chip, 10-channel optical transimpedance receiver and a low-power, single channel clock recovery circuit have been designed and characterized. The 10-channel receiver operates from a single 3.3 V or 5 V power supply, is capable of automatic offset correction, and generates ECL or PECL output levels. The clock recovery circuit operates from a single 5 V power supply and is based upon a novel variation on the so-called early-late gate bit synchronizer loop.
{"title":"Low power components for 1 Gb/s optical communications: A single-chip 10-channel optical receiver and a clock recovery circuit","authors":"R. Hickling, R. A. Kot, M. Yagi, R. Nagarajan, W. Sha, R. Craig","doi":"10.1109/GAAS.1997.628269","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628269","url":null,"abstract":"A single chip, 10-channel optical transimpedance receiver and a low-power, single channel clock recovery circuit have been designed and characterized. The 10-channel receiver operates from a single 3.3 V or 5 V power supply, is capable of automatic offset correction, and generates ECL or PECL output levels. The clock recovery circuit operates from a single 5 V power supply and is based upon a novel variation on the so-called early-late gate bit synchronizer loop.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128585694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628233
D. Teeter, S. Bouthillette, A. Platzker, A. Forbes, S. Lichwala
The ability of the Gummel Poon model to predict HBT ACPR is investigated. It is shown that with proper parameter extraction, the Gummel Poon model is capable of predicting ACPR for NADC and O-QPSK CDMA. Several examples of measured versus modeled performance are given along with a detailed discussion of the parameter extraction methodology.
{"title":"Prediction of HBT ACPR using the Gummel Poon large signal model","authors":"D. Teeter, S. Bouthillette, A. Platzker, A. Forbes, S. Lichwala","doi":"10.1109/GAAS.1997.628233","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628233","url":null,"abstract":"The ability of the Gummel Poon model to predict HBT ACPR is investigated. It is shown that with proper parameter extraction, the Gummel Poon model is capable of predicting ACPR for NADC and O-QPSK CDMA. Several examples of measured versus modeled performance are given along with a detailed discussion of the parameter extraction methodology.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115630406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628235
M. Nagaoka, H. Wakimoto, T. Seshita, K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi
A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.
{"title":"Single low voltage supply operation GaAs power MESFET amplifier with low-distortion gain-variable attenuator for 1.9-GHz personal handy phone systems","authors":"M. Nagaoka, H. Wakimoto, T. Seshita, K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi","doi":"10.1109/GAAS.1997.628235","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628235","url":null,"abstract":"A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126801838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628270
M. Yung, J. Jensen, G. Raghavan, M. Rodwell, M. Hafizi, R. Walden, K. Elliott, M. Kardos, Y. Brown, M. Montes, H. Sun, W. Stanchina
The authors designed and fabricated a highly integrated and very low power receiver IC for 2.5 Gb/s optical communication. It consisted of an AGC data recovery circuit and demultiplexer, and consumed only 340 mW power. The measured data have validated our design approach and have demonstrated the potential of the InP HBT technology to integrate analog and digital functions for low power and high speed applications. Achieving even lower power is feasible through device scaling. Additional functionality such as multiple data rate, frequency detection, lock indicator and data decoder can be included in future integration.
{"title":"An InP HBT low power receiver IC integrating AGC amplifier, clock recovery circuit and demultiplexers","authors":"M. Yung, J. Jensen, G. Raghavan, M. Rodwell, M. Hafizi, R. Walden, K. Elliott, M. Kardos, Y. Brown, M. Montes, H. Sun, W. Stanchina","doi":"10.1109/GAAS.1997.628270","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628270","url":null,"abstract":"The authors designed and fabricated a highly integrated and very low power receiver IC for 2.5 Gb/s optical communication. It consisted of an AGC data recovery circuit and demultiplexer, and consumed only 340 mW power. The measured data have validated our design approach and have demonstrated the potential of the InP HBT technology to integrate analog and digital functions for low power and high speed applications. Achieving even lower power is feasible through device scaling. Additional functionality such as multiple data rate, frequency detection, lock indicator and data decoder can be included in future integration.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125319776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628255
D. Streit, A. Gutierrez-Aitken, J. Cowles, Li-Wu Yang, K. Kobayashi, L. Tran, T. Block, A. Oki
We have developed an InP-based HBT fabrication line to produce HBT integrated circuits in high volume for government and commercial applications. We present here production results and performance characteristics for InP HBT MMICs specifically designed for consumer products.
{"title":"Production and commercial insertion of InP HBT integrated circuits","authors":"D. Streit, A. Gutierrez-Aitken, J. Cowles, Li-Wu Yang, K. Kobayashi, L. Tran, T. Block, A. Oki","doi":"10.1109/GAAS.1997.628255","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628255","url":null,"abstract":"We have developed an InP-based HBT fabrication line to produce HBT integrated circuits in high volume for government and commercial applications. We present here production results and performance characteristics for InP HBT MMICs specifically designed for consumer products.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121900023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628252
M. Leung, J. Spargo, K. Kobayashi, A. Silver
Superconductive electronics offers a unique combination of high bandwidth and low power for mission critical hardware such as digital processors at 20 to 100 GHz, microwatt per bit analog to digital converters, large digital switches at multi-Gb/s data rates, and low noise parametric amplifiers. This cryogenic technology, typically operating at a few degrees or a few tens of degrees Kelvin, depends upon the unique physics of superconducting materials such as Nb, NbN, and YBaCuO, and the fundamental circuit element, the Josephson junction (JJ) to create unique architectures of unprecedented design efficiency and performance. These circuits are based on the single flux quantum (SFQ) logic family, a technology that has no parallel in semiconductor electronics. Digital data is transmitted by voltage pulses with amplitude less than 1 mV, but at extremely high speeds. Individual gates have been operated as high as 370 GHz. In this paper, we present a brief overview of superconductive digital technology, describe some recent circuits, and discuss how the challenges to superconductive technology are being met, including the use of multi-chip module (MCM) technology, and the potential use of III-V HBT and HEMT circuits to provide interface drivers and amplifiers, possibly operated cryogenically.
{"title":"Superconductive electronics-a high speed and low power technology complementing III-V technologies for advanced systems","authors":"M. Leung, J. Spargo, K. Kobayashi, A. Silver","doi":"10.1109/GAAS.1997.628252","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628252","url":null,"abstract":"Superconductive electronics offers a unique combination of high bandwidth and low power for mission critical hardware such as digital processors at 20 to 100 GHz, microwatt per bit analog to digital converters, large digital switches at multi-Gb/s data rates, and low noise parametric amplifiers. This cryogenic technology, typically operating at a few degrees or a few tens of degrees Kelvin, depends upon the unique physics of superconducting materials such as Nb, NbN, and YBaCuO, and the fundamental circuit element, the Josephson junction (JJ) to create unique architectures of unprecedented design efficiency and performance. These circuits are based on the single flux quantum (SFQ) logic family, a technology that has no parallel in semiconductor electronics. Digital data is transmitted by voltage pulses with amplitude less than 1 mV, but at extremely high speeds. Individual gates have been operated as high as 370 GHz. In this paper, we present a brief overview of superconductive digital technology, describe some recent circuits, and discuss how the challenges to superconductive technology are being met, including the use of multi-chip module (MCM) technology, and the potential use of III-V HBT and HEMT circuits to provide interface drivers and amplifiers, possibly operated cryogenically.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126952358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628275
J. Moniz
With the advent of a manufacturable Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) technology, does Gallium Arsenide (GaAs) have a future in today's high volume high frequency wireless communications marketplace? This paper describes the capabilities of IBM SiGe HBT technology as it compares to GaAs HBT and Field Effect Transistor (FET) technologies for radio frequency (RF) applications. Comparisons are made at the device, single function, and highly integrated RF integrated circuit (RFIC) level for performance and cost.
{"title":"Is SiGe the future of GaAs for RF applications?","authors":"J. Moniz","doi":"10.1109/GAAS.1997.628275","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628275","url":null,"abstract":"With the advent of a manufacturable Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) technology, does Gallium Arsenide (GaAs) have a future in today's high volume high frequency wireless communications marketplace? This paper describes the capabilities of IBM SiGe HBT technology as it compares to GaAs HBT and Field Effect Transistor (FET) technologies for radio frequency (RF) applications. Comparisons are made at the device, single function, and highly integrated RF integrated circuit (RFIC) level for performance and cost.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130891201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628231
D. Monthei
This paper discusses some of the typical packages being used for wireless applications today and how they are "modified" for high frequency use. Also discussed are electrical modeling concerns of packages, PC board layout and a number of other factors impacting part performance. Choices in parasitic circuit topology are discussed along with EM simulation and comparison to measured data.
{"title":"Packaging for wireless technology","authors":"D. Monthei","doi":"10.1109/GAAS.1997.628231","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628231","url":null,"abstract":"This paper discusses some of the typical packages being used for wireless applications today and how they are \"modified\" for high frequency use. Also discussed are electrical modeling concerns of packages, PC board layout and a number of other factors impacting part performance. Choices in parasitic circuit topology are discussed along with EM simulation and comparison to measured data.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131866274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628229
F. Ren, M. Hong, J. Kuo, W. Hobson, J. Lothian, H. Tsai, J. Lin, J. Mannaerts, J. Kwo, S. Chu, Y. Chen, A. Cho
We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.
{"title":"III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric","authors":"F. Ren, M. Hong, J. Kuo, W. Hobson, J. Lothian, H. Tsai, J. Lin, J. Mannaerts, J. Kwo, S. Chu, Y. Chen, A. Cho","doi":"10.1109/GAAS.1997.628229","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628229","url":null,"abstract":"We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122491630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628285
K. Kamozaki, N. Kurita, W. Hioe, T. Tanimoto, H. Ohta, T. Nakamura, H. Kondoh
A 77-GHz MMIC chip set consisting of a low noise amplifier, a power amplifier, a down converter and a voltage controlled oscillator has been developed to constitute a T/R module for automotive radar systems. The low noise amplifier exhibited a gain of 9.5 dB/spl plusmn/1.0 dB over a 62-96.5 GHz band with an NF of 5.8 dB. The power amplifier achieved a small-signal gain of 13.5 dB/spl plusmn/2.5 dB from 70.7 GHz to 80.3 GHz with 9.7 dBm output power at the 1 dB gain compression. The down converter exhibited a conversion gain of 1.3 dB/spl plusmn/2.2 dB in a band between 75 GHz and 98 GHz with an NF of 7.5 dB. The 77-GHz voltage controlled oscillator exhibited an output power of 0.9 dBm/spl plusmn/0.9 dB over a tuning range of 75.5-76.6 GHz. A design philosophy has been adopted of achieving broadband performance in small MMIC chip size in order to improve manufacturability and performance/cost characteristics of the chip set. The total area for the chip set is 7.92 mm/sup 2/.
{"title":"A 77 GHz T/R MMIC chip set for automotive radar systems","authors":"K. Kamozaki, N. Kurita, W. Hioe, T. Tanimoto, H. Ohta, T. Nakamura, H. Kondoh","doi":"10.1109/GAAS.1997.628285","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628285","url":null,"abstract":"A 77-GHz MMIC chip set consisting of a low noise amplifier, a power amplifier, a down converter and a voltage controlled oscillator has been developed to constitute a T/R module for automotive radar systems. The low noise amplifier exhibited a gain of 9.5 dB/spl plusmn/1.0 dB over a 62-96.5 GHz band with an NF of 5.8 dB. The power amplifier achieved a small-signal gain of 13.5 dB/spl plusmn/2.5 dB from 70.7 GHz to 80.3 GHz with 9.7 dBm output power at the 1 dB gain compression. The down converter exhibited a conversion gain of 1.3 dB/spl plusmn/2.2 dB in a band between 75 GHz and 98 GHz with an NF of 7.5 dB. The 77-GHz voltage controlled oscillator exhibited an output power of 0.9 dBm/spl plusmn/0.9 dB over a tuning range of 75.5-76.6 GHz. A design philosophy has been adopted of achieving broadband performance in small MMIC chip size in order to improve manufacturability and performance/cost characteristics of the chip set. The total area for the chip set is 7.92 mm/sup 2/.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121898430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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