Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628229
F. Ren, M. Hong, J. Kuo, W. Hobson, J. Lothian, H. Tsai, J. Lin, J. Mannaerts, J. Kwo, S. Chu, Y. Chen, A. Cho
We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.
{"title":"III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric","authors":"F. Ren, M. Hong, J. Kuo, W. Hobson, J. Lothian, H. Tsai, J. Lin, J. Mannaerts, J. Kwo, S. Chu, Y. Chen, A. Cho","doi":"10.1109/GAAS.1997.628229","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628229","url":null,"abstract":"We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122491630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628273
J. Godin, P. André, J. Benchimol, P. Desrousseaux, A. Duchenois, A. Konczykowska, P. Launay, M. Meghelli, M. Riet
High bit-rate optical communication links require high performance circuits. This paper presents a InP Double Heterojunction HBT technology, and circuits fabricated with it: 40 Gbit/s MUX and DMUX, a 20 Gbit/s driver, a 30 Gbit/s selector-driver, a decision-decoding circuit for multilevel transmissions.
{"title":"A InP DHBT technology for high bit-rate optical communications circuits","authors":"J. Godin, P. André, J. Benchimol, P. Desrousseaux, A. Duchenois, A. Konczykowska, P. Launay, M. Meghelli, M. Riet","doi":"10.1109/GAAS.1997.628273","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628273","url":null,"abstract":"High bit-rate optical communication links require high performance circuits. This paper presents a InP Double Heterojunction HBT technology, and circuits fabricated with it: 40 Gbit/s MUX and DMUX, a 20 Gbit/s driver, a 30 Gbit/s selector-driver, a decision-decoding circuit for multilevel transmissions.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121124965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628264
D. Jani, C.E. Chang, K. Wang
A Timing Interface Unit (TIU) integrated circuit is implemented in a Ft=45 GHz (Ft) AlGaAs/GaAs HBT process. The TIU was designed for a satellite based laser altimeter system with vertical resolution of 5 cms. The TIU performs two functions: (1) generate coarse count for the time-of-flight of the laser pulse; (2) retiming the return pulse with the clock for the return pulse digitizer and generate the return acknowledge. The TIU has 27-bit ripple counter with synchronous operation up to 5 GHz. The packaged IC was tested up to 3 GHz clock rates and 5 GHz on-wafer testing. The chip dissipates 1.3 W. The TIU IC has been integrated into a prototype data acquisition system developed for laser altimetry.
{"title":"A packaged 3 GHz timing interface unit for a laser altimeter system","authors":"D. Jani, C.E. Chang, K. Wang","doi":"10.1109/GAAS.1997.628264","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628264","url":null,"abstract":"A Timing Interface Unit (TIU) integrated circuit is implemented in a Ft=45 GHz (Ft) AlGaAs/GaAs HBT process. The TIU was designed for a satellite based laser altimeter system with vertical resolution of 5 cms. The TIU performs two functions: (1) generate coarse count for the time-of-flight of the laser pulse; (2) retiming the return pulse with the clock for the return pulse digitizer and generate the return acknowledge. The TIU has 27-bit ripple counter with synchronous operation up to 5 GHz. The packaged IC was tested up to 3 GHz clock rates and 5 GHz on-wafer testing. The chip dissipates 1.3 W. The TIU IC has been integrated into a prototype data acquisition system developed for laser altimetry.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"363 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125814258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628259
B. Bayraktaroglu, G. Dix, S. Mohammadi, D. Pavlidis
The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.
{"title":"AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise","authors":"B. Bayraktaroglu, G. Dix, S. Mohammadi, D. Pavlidis","doi":"10.1109/GAAS.1997.628259","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628259","url":null,"abstract":"The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124384162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628272
H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, R. Takeyari
An IC chip set for 40 Gbit/s TDM optical transmission systems was designed and fabricated using an InP/InGaAs HBT technology. For digital ICs, a modulator driver, a D-type flip flop at 20 Gbit/s, and a 2:1 selector at 40 Gbit/s were fabricated. Also, three analog ICs were developed: the five-section cascode distributed amplifier which obtained a gain of 9.5 dB in the frequency range of 1-50 GHz, the 41.9 dB/spl Omega/ transimpedance amplifier which achieved more than 40 GHz bandwidth assuming 50 fF input capacitance for the photodetector, the two-stage differential amplifier which obtained a 7.5 dB gain with a bandwidth of 40 GHz.
{"title":"InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems","authors":"H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, R. Takeyari","doi":"10.1109/GAAS.1997.628272","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628272","url":null,"abstract":"An IC chip set for 40 Gbit/s TDM optical transmission systems was designed and fabricated using an InP/InGaAs HBT technology. For digital ICs, a modulator driver, a D-type flip flop at 20 Gbit/s, and a 2:1 selector at 40 Gbit/s were fabricated. Also, three analog ICs were developed: the five-section cascode distributed amplifier which obtained a gain of 9.5 dB in the frequency range of 1-50 GHz, the 41.9 dB/spl Omega/ transimpedance amplifier which achieved more than 40 GHz bandwidth assuming 50 fF input capacitance for the photodetector, the two-stage differential amplifier which obtained a 7.5 dB gain with a bandwidth of 40 GHz.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128754010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628287
S. Nash, A. Platzker, R. Wohlert, C. Liss
A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.
{"title":"A 1.4 watt Q-band GaAs PHEMT MMIC","authors":"S. Nash, A. Platzker, R. Wohlert, C. Liss","doi":"10.1109/GAAS.1997.628287","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628287","url":null,"abstract":"A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134398616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-12DOI: 10.1109/GAAS.1997.628227
E. J. Lum
This paper discusses GaAs technology with regard to substrate materials, semiconductor devices, and the thriving wireless handset market that is carrying the GaAs industry toward record-breaking revenue and unit volume. A vertical view of the GaAs market for wireless applications is presented to provide a complete picture of the GaAs food chain. This paper does not focus on digital GaAs ICs and their applications but briefly mentions them.
{"title":"GaAs technology rides the wireless wave","authors":"E. J. Lum","doi":"10.1109/GAAS.1997.628227","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628227","url":null,"abstract":"This paper discusses GaAs technology with regard to substrate materials, semiconductor devices, and the thriving wireless handset market that is carrying the GaAs industry toward record-breaking revenue and unit volume. A vertical view of the GaAs market for wireless applications is presented to provide a complete picture of the GaAs food chain. This paper does not focus on digital GaAs ICs and their applications but briefly mentions them.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129631752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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