Pub Date : 2023-04-27DOI: 10.1051/epjap/2023230001
A. Lenshin, Yaroslav A. Peshkov, O. V. Chernousova, S. Kannykin, D. Minakov
In this work we obtained porous silicon with different porosity by electrochemical etching and studied their photoluminescence. Two well-known photoluminescence mechanisms of porous silicon related to the composition and morphology of the surface have been discovered, and it has been established at what porosity values they prevail. It is shown that an increase in the porosity index leads to an increase in the intensity of photoluminescence.
{"title":"Investigation of the relationship between porosity and luminescent properties of porous silicon","authors":"A. Lenshin, Yaroslav A. Peshkov, O. V. Chernousova, S. Kannykin, D. Minakov","doi":"10.1051/epjap/2023230001","DOIUrl":"https://doi.org/10.1051/epjap/2023230001","url":null,"abstract":"In this work we obtained porous silicon with different porosity by electrochemical etching and studied their photoluminescence. Two well-known photoluminescence mechanisms of porous silicon related to the composition and morphology of the surface have been discovered, and it has been established at what porosity values they prevail. It is shown that an increase in the porosity index leads to an increase in the intensity of photoluminescence.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122005266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-25DOI: 10.1051/epjap/2023220290
Mohamed Amine Réda, Redouane Rami, Lalla Btissam Drissi, I. Aberdane, R. Ahl Laamara
The ab-initio study of electronic and magnetic properties and Curie temperature of Transition Metal (TM) doped ScN diluted magnetic semiconductor (DMS) are calculated using LDA method implemented in (KKR-CPA). The totl and partial density of states (DOS) of pure zinc blend ScN as well as TM doped compounds are plotted for different concentrations of dopants. It is shown that the Sc substituted by TM materials induces a half metallic character in the system for different concentrations except for Sc1−xCoxN (x > 14%) and Sc1−xNixN (x > 6%). Also, the Sc1−xVxN, Sc1−xCrxN , Sc1−xMnxN compounds are stable in ferromagnetic states, while Sc1−xCoxN and Sc1−xNixN compounds prefer anti-ferromagnetic phase. To improve this latest result, doping ScN with double impurities (Co, Ni) is also investiageted. As a result, Sc1−x−yCoxNiyN is more stable in ferromagnetic state for different values of concentration (except for x = y = 10%). The mechanism of exchange interaction is also discussed for all doped systems. High curie temperature are found for most concentrations. The present results suggest TM doped Sc nitride as potential candidate for spintronic devices.
{"title":"Transition Metal doping and co-doping effect on electronic and magnetic properties of zb-ScN.","authors":"Mohamed Amine Réda, Redouane Rami, Lalla Btissam Drissi, I. Aberdane, R. Ahl Laamara","doi":"10.1051/epjap/2023220290","DOIUrl":"https://doi.org/10.1051/epjap/2023220290","url":null,"abstract":"The ab-initio study of electronic and magnetic properties and Curie temperature of Transition Metal (TM) doped ScN diluted magnetic semiconductor (DMS) are calculated using LDA method implemented in (KKR-CPA). The totl and partial density of states (DOS) of pure zinc blend ScN as well as TM doped compounds are plotted for different concentrations of dopants. It is shown that the Sc substituted by TM materials induces a half metallic character in the system for different concentrations except for Sc1−xCoxN (x > 14%) and Sc1−xNixN (x > 6%). Also, the Sc1−xVxN, Sc1−xCrxN , Sc1−xMnxN compounds are stable in ferromagnetic states, while Sc1−xCoxN and Sc1−xNixN compounds prefer anti-ferromagnetic phase. To improve this latest result, doping ScN with double impurities (Co, Ni) is also investiageted. As a result, Sc1−x−yCoxNiyN is more stable in ferromagnetic state for different values of concentration (except for x = y = 10%). The mechanism of exchange interaction is also discussed for all doped systems. High curie temperature are found for most concentrations. The present results suggest TM doped Sc nitride as potential candidate for spintronic devices.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122977456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-13DOI: 10.1051/epjap/2023230004
Khalid Quertite, H. Enriquez, N. Trcera, P. Lagarde, A. Bendounan, A. Mayne, G. Dujardin, A. El kenz, A. Benyoussef, A. Kara, H. Oughaddou
Silicene is a two-dimensional (2D) material with very promising electronic properties for applications in silicon modern technology. However, the first experimental synthesis of silicene on metallic surfaces shows strong interactions between the silicene and its substrate, which can alter its electronic properties. Here, we report on the first steps of silicene growth on an insulating surface (NaCl) using scanning tunneling microscopy (STM), low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and angle-resolved photoemission spectroscopy (ARPES). We demonstrate the importance of temperature annealing in the growth of silicene on NaCl. Indeed, after deposition of silicon on the NaCl/Ag(110) surface, we observe the following stages: i) at room temperature, the silicon atoms accumulate on top of the NaCl layer without any given order. ii) At 60°C, silicon dimers start to grow on the NaCl. iii) At 140°C, these dimers form a 2D silicon chains on the surface. iv) After a post-annealing at 200°C, evident 2D silicon nanoribbons with a honeycomb-like structure were observed. Our results of the first silicene growth stages on an insulating surface are a necessary step for exploring its growth mechanism further.
{"title":"First steps of silicene growth on an insulating thin-film: effect of the substrate temperature","authors":"Khalid Quertite, H. Enriquez, N. Trcera, P. Lagarde, A. Bendounan, A. Mayne, G. Dujardin, A. El kenz, A. Benyoussef, A. Kara, H. Oughaddou","doi":"10.1051/epjap/2023230004","DOIUrl":"https://doi.org/10.1051/epjap/2023230004","url":null,"abstract":"Silicene is a two-dimensional (2D) material with very promising electronic properties for applications in silicon modern technology. However, the first experimental synthesis of silicene on metallic surfaces shows strong interactions between the silicene and its substrate, which can alter its electronic properties. Here, we report on the first steps of silicene growth on an insulating surface (NaCl) using scanning tunneling microscopy (STM), low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and angle-resolved photoemission spectroscopy (ARPES). We demonstrate the importance of temperature annealing in the growth of silicene on NaCl. Indeed, after deposition of silicon on the NaCl/Ag(110) surface, we observe the following stages: i) at room temperature, the silicon atoms accumulate on top of the NaCl layer without any given order. ii) At 60°C, silicon dimers start to grow on the NaCl. iii) At 140°C, these dimers form a 2D silicon chains on the surface. iv) After a post-annealing at 200°C, evident 2D silicon nanoribbons with a honeycomb-like structure were observed. Our results of the first silicene growth stages on an insulating surface are a necessary step for exploring its growth mechanism further.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123543941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-13DOI: 10.1051/epjap/2023220293
A. Bagmut, I. Bagmut, A. Devizenko
Using the methods of in situ transmission electron microscopy (TEM) with video recording of the phase transformations the structure and kinetics of crystal growth in amorphous films of Ti41Zr41Ni18 were studied. The films were obtained by magnetron sputtering of a Ti-Zr-Ni target with deposition on substrates at T = 30°С. The amorphous (X-ray amorphous) state of the film was retained up to a temperature of 650°C, above which a polymorphous transformation took place with the formation of crystals with the FCC structure. Video frame analysis shows that the nucleation and growth of flat crystals with FCC structure take place at electron beam irradiation. The speed of movement of the crystallization front did not depend on the time at a constant intensity of the electron beam. A linear dependence on time for the radius of the crystal and a quadratic one for the fraction of the crystalline phase are performed. The dimensionless parameter of the relative length of crystallization was about three thousand.
{"title":"In situ TEM study of crystals growth in amorphous Ti-Zr-Ni films at electron beam irradiation","authors":"A. Bagmut, I. Bagmut, A. Devizenko","doi":"10.1051/epjap/2023220293","DOIUrl":"https://doi.org/10.1051/epjap/2023220293","url":null,"abstract":"Using the methods of in situ transmission electron microscopy (TEM) with video recording of the phase transformations the structure and kinetics of crystal growth in amorphous films of Ti41Zr41Ni18 were studied. The films were obtained by magnetron sputtering of a Ti-Zr-Ni target with deposition on substrates at T = 30°С. The amorphous (X-ray amorphous) state of the film was retained up to a temperature of 650°C, above which a polymorphous transformation took place with the formation of crystals with the FCC structure. Video frame analysis shows that the nucleation and growth of flat crystals with FCC structure take place at electron beam irradiation. The speed of movement of the crystallization front did not depend on the time at a constant intensity of the electron beam. A linear dependence on time for the radius of the crystal and a quadratic one for the fraction of the crystalline phase are performed. The dimensionless parameter of the relative length of crystallization was about three thousand.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127074258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-07DOI: 10.1051/epjap/2023220332
Yin Guiqin; Zhou Youyou; Yuan Qianghua
The discharged characteristics of capacitively coupled Ar/N2 plasma driven by 8 MHz and 100 MHz are investigated at low pressure. The mean electron temperatures at central plasma area are discussed by the corona model with the high frequency (HF) power increase (low frequency (LF) power is fixed) and argon increase. The second positive system (SPS) of nitrogen molecular (C3Πu→B3Πg) from 370 nm to 410 nm in the N2 optical emission spectrum is used to calculate the rotational and vibrational temperature of nitrogen molecular. These results show that the mean electron temperatures both decrease with the argon increase and the HF power increase. The rotational temperature increase with argon increase and decrease with the HF power increase. The particle-in-cell/Monte Carlo (PIC/MC) method is used to calculate the ion density, electron temperature and electron energy probability function (EEPF) according to experimental conditions. These results show that the electron temperatures both decrease with HF power increase and argon content increase, which are agreed with the spectral results. The EEPF show that the low and high energy electrons both increase with the HF power increase and argon increase. The energy exchange by these higher energy electrons is large, which result in the decrease of electron temperatures.
{"title":"The discharged characteristics of capacitively coupled Ar/N2 plasma driven by the dual frequency 8 / 100 MHz","authors":"Yin Guiqin; Zhou Youyou; Yuan Qianghua","doi":"10.1051/epjap/2023220332","DOIUrl":"https://doi.org/10.1051/epjap/2023220332","url":null,"abstract":"The discharged characteristics of capacitively coupled Ar/N2 plasma driven by 8 MHz and 100 MHz are investigated at low pressure. The mean electron temperatures at central plasma area are discussed by the corona model with the high frequency (HF) power increase (low frequency (LF) power is fixed) and argon increase. The second positive system (SPS) of nitrogen molecular (C3Πu→B3Πg) from 370 nm to 410 nm in the N2 optical emission spectrum is used to calculate the rotational and vibrational temperature of nitrogen molecular. These results show that the mean electron temperatures both decrease with the argon increase and the HF power increase. The rotational temperature increase with argon increase and decrease with the HF power increase. The particle-in-cell/Monte Carlo (PIC/MC) method is used to calculate the ion density, electron temperature and electron energy probability function (EEPF) according to experimental conditions. These results show that the electron temperatures both decrease with HF power increase and argon content increase, which are agreed with the spectral results. The EEPF show that the low and high energy electrons both increase with the HF power increase and argon increase. The energy exchange by these higher energy electrons is large, which result in the decrease of electron temperatures.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121906053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-07DOI: 10.1051/epjap/2023230031
Xiyang Ma, Jingqi Zhang, G. Lyu, J. Qiao
Dynamic mechanical relaxation processes, i.e. main (α) relaxation and secondary (β) relaxation, are important issues to understand mechanical deformation, atomic diffusion as well as glass transition phenomenon of metallic glasses. In current work, La68Ni15Al15Cu2 metallic glass was selected as a protocol glass system. Mechanical relaxation processes were probed by dynamic mechanical analysis. The effects of annealing at different temperatures were analyzed by Kohlrausch–Williams–Watts (KWW)-type equation. The Kohlrausch exponent β_KWW reflects the deviation from a single Debye relaxation, indicating the fact that dynamics in metallic glass are actually heterogeneous originating from the structural heterogeneity. The effects of thermal treatments were also discussed, which provides a potential solution to tune the relaxation behaviors in metallic glasses.
{"title":"Effect of the physical aging on the secondary β relaxation process in a La-based metallic glass","authors":"Xiyang Ma, Jingqi Zhang, G. Lyu, J. Qiao","doi":"10.1051/epjap/2023230031","DOIUrl":"https://doi.org/10.1051/epjap/2023230031","url":null,"abstract":"Dynamic mechanical relaxation processes, i.e. main (α) relaxation and secondary (β) relaxation, are important issues to understand mechanical deformation, atomic diffusion as well as glass transition phenomenon of metallic glasses. In current work, La68Ni15Al15Cu2 metallic glass was selected as a protocol glass system. Mechanical relaxation processes were probed by dynamic mechanical analysis. The effects of annealing at different temperatures were analyzed by Kohlrausch–Williams–Watts (KWW)-type equation. The Kohlrausch exponent β_KWW reflects the deviation from a single Debye relaxation, indicating the fact that dynamics in metallic glass are actually heterogeneous originating from the structural heterogeneity. The effects of thermal treatments were also discussed, which provides a potential solution to tune the relaxation behaviors in metallic glasses.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"145 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124145245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-05DOI: 10.1051/epjap/2023230023
K. Beepat, Susheel Kumar, Ankush Sharma, D. Sharma, D. Pathak, Jean Michel Nunzi
Photovoltaic is among the most propitious renewable energy sources for meeting global energy demands. Owing to their simple solution synthesis procedure, lightweight wearable, power conversion efficiency, flyable, ready to deploy for extremist lightweight space, and reduced cost of constituent materials, perovskite solar cells have gotten huge interest in the past years. Because of high-quality perovskite film attained by low-temperature fabrication methods, as well as the development of appropriate interface and electrode materials, the effectiveness of perovskite solar cells (PSCs) has topped 25% efficiency in recent years. Furthermore, perovskite solar cells' stabilization has gotten a lot of well-deserved recognition. The future of various carbon, tin, and polymer materials-based perovskite solar cells has even been explored, as well as their industrial expansion possibility are also discussed. This review paper summarizes important accomplishments to date, highlights the unique properties of these perovskites that have led to their fast upsurge, and highlights the problems that must be overcome for perovskite solar cells to be developed and commercialized successfully.
{"title":"Perovskite Materials for Photovoltaics: A Review","authors":"K. Beepat, Susheel Kumar, Ankush Sharma, D. Sharma, D. Pathak, Jean Michel Nunzi","doi":"10.1051/epjap/2023230023","DOIUrl":"https://doi.org/10.1051/epjap/2023230023","url":null,"abstract":"Photovoltaic is among the most propitious renewable energy sources for meeting global energy demands. Owing to their simple solution synthesis procedure, lightweight wearable, power conversion efficiency, flyable, ready to deploy for extremist lightweight space, and reduced cost of constituent materials, perovskite solar cells have gotten huge interest in the past years. Because of high-quality perovskite film attained by low-temperature fabrication methods, as well as the development of appropriate interface and electrode materials, the effectiveness of perovskite solar cells (PSCs) has topped 25% efficiency in recent years. Furthermore, perovskite solar cells' stabilization has gotten a lot of well-deserved recognition. The future of various carbon, tin, and polymer materials-based perovskite solar cells has even been explored, as well as their industrial expansion possibility are also discussed. This review paper summarizes important accomplishments to date, highlights the unique properties of these perovskites that have led to their fast upsurge, and highlights the problems that must be overcome for perovskite solar cells to be developed and commercialized successfully.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114077843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-04DOI: 10.1051/epjap/2023220285
M. Khenfouch, R. Ndimba, E. Ismail, M. Hamzah, P. Mbule, S. Sarma, R. Erasmus, B. Mothudi, M. Dhlamini, M. Maaza
The importance of green process in the synthesis of nanomaterials becomes universally known. In this study, we report on the efficiency of a Aspalathus linearis’s plant extract known as Rooibos tea on the synthesis of graphene via a bio-active process. Using several nanocharcterization techniques, our investigations on the main physico-chemical properties confirmed the ability of this plant extract as a reducing and capping agent on the synthesis of good quality few layered graphene sheets compared to several natural extracts and chemical agents. Furthermore, this eco-friendly cost-effective process allows the control and modulation of the optical and electrical properties of the prepared graphene. Moreover, this material was positively tested as silver NPs fluorescence quencher. Hence, Rooibos shows its ability as an effective chelating agent in the production of graphene sheets which serves electronic and optoelectronic related quenching applications.
{"title":"Eco-friendly synthesized few layered graphene: \u0000Main physico-chemical nanocharacterizations for optical quenching applications","authors":"M. Khenfouch, R. Ndimba, E. Ismail, M. Hamzah, P. Mbule, S. Sarma, R. Erasmus, B. Mothudi, M. Dhlamini, M. Maaza","doi":"10.1051/epjap/2023220285","DOIUrl":"https://doi.org/10.1051/epjap/2023220285","url":null,"abstract":"The importance of green process in the synthesis of nanomaterials becomes universally known. In this study, we report on the efficiency of a Aspalathus linearis’s plant extract known as Rooibos tea on the synthesis of graphene via a bio-active process. Using several nanocharcterization techniques, our investigations on the main physico-chemical properties confirmed the ability of this plant extract as a reducing and capping agent on the synthesis of good quality few layered graphene sheets compared to several natural extracts and chemical agents. Furthermore, this eco-friendly cost-effective process allows the control and modulation of the optical and electrical properties of the prepared graphene. Moreover, this material was positively tested as silver NPs fluorescence quencher. Hence, Rooibos shows its ability as an effective chelating agent in the production of graphene sheets which serves electronic and optoelectronic related quenching applications.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128167612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-21DOI: 10.1051/epjap/2023230014
Moulay Said El Kazdir, M. Rzaizi, K. El Assali, D. Abouelaoualim
Silicon quantum dots (QDs) are considered an excellent platform for spin qubits due to their weak spin-orbit interaction (SOI). Indeed, due to quantum confinement, novel spin properties arise from the SOI. In this work, we have studied the influence of the Rashba SOI and the confinement potential on the energy spectrum of an electron confined in a Silicon disk-shaped quantum dot, in the presence of an external magnetic field. The effects of the QD size, the confinement potential and the Rashba alpha coefficient on the energy levels are also studied. We used the effective mass approximation to determine the energy levels and their wave functions for different states. The results are presented as a function of the magnetic field in the presence and absence of SOI. We find that the energy levels of the electrons behave very differently depending on the magnetic field. The energy of all states changes with increasing magnetic field and each energy level splits into two and the energy difference between these two levels also increases with magnetic field, in the presence and absence of SOI. The energy levels are proportional to the Rashba alpha coefficient and inversely proportional to the radius of the QD.
{"title":"Effect of Rashba spin-orbit coupling interaction on energy states of Silicon disk-shaped quantum dot","authors":"Moulay Said El Kazdir, M. Rzaizi, K. El Assali, D. Abouelaoualim","doi":"10.1051/epjap/2023230014","DOIUrl":"https://doi.org/10.1051/epjap/2023230014","url":null,"abstract":"Silicon quantum dots (QDs) are considered an excellent platform for spin qubits due to their weak spin-orbit interaction (SOI). Indeed, due to quantum confinement, novel spin properties arise from the SOI. In this work, we have studied the influence of the Rashba SOI and the confinement potential on the energy spectrum of an electron confined in a Silicon disk-shaped quantum dot, in the presence of an external magnetic field. The effects of the QD size, the confinement potential and the Rashba alpha coefficient on the energy levels are also studied. We used the effective mass approximation to determine the energy levels and their wave functions for different states. The results are presented as a function of the magnetic field in the presence and absence of SOI. We find that the energy levels of the electrons behave very differently depending on the magnetic field. The energy of all states changes with increasing magnetic field and each energy level splits into two and the energy difference between these two levels also increases with magnetic field, in the presence and absence of SOI. The energy levels are proportional to the Rashba alpha coefficient and inversely proportional to the radius of the QD.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"1996 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128630736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-21DOI: 10.1051/epjap/2023230013
R. Takassa, A. E. Mouncharih, O. Farkad, F. Elfatouaki, S. Hassine, A. Ouahdani, E. Ibnouelghazi, D. Abouelaoualim
In this work, we investigate the electronic and thermoelectric properties of CN, C 2 N 2 and C 4 N 2 nanotubes resulting from doping of Nitrogen atoms, three and two N-zigzag chains on small (3,3) single walled carbon nanotube (SWCNT) respectivelly. All calculations were performed via DFT theory using WIEN2K code. For the calculations of electronic structure, we perform GGA with TB-mBJ exchange potential and for the thermoelectric calculations were performed in semi-classical Boltzmann transport theory. Our results show that all structures are energetically stable. The electronic behaviour of (3,3) SWCNT transforms from semiconductor to metal in CN nanotube and to topological Weyl semimetal (WSM) state for C2N2 and C4N2 nanotubes. The thermoelectric properties such as electrical conductivity, Seebeck coefficient and power factor are calculated, the results show that the N-doping enhancing the thermoelectric properties of pristine nanotube. The electronic and thermoelectric properties of nitrogen doping SWCNT show promising candidate toward electronic and thermoelectric devices.
{"title":"Investigation of the electronic and thermoelectric properties of nitrogen chains doping SWCNT: Ab initio study","authors":"R. Takassa, A. E. Mouncharih, O. Farkad, F. Elfatouaki, S. Hassine, A. Ouahdani, E. Ibnouelghazi, D. Abouelaoualim","doi":"10.1051/epjap/2023230013","DOIUrl":"https://doi.org/10.1051/epjap/2023230013","url":null,"abstract":"In this work, we investigate the electronic and thermoelectric properties of CN, C 2 N 2 and C 4 N 2 nanotubes resulting from doping of Nitrogen atoms, three and two N-zigzag chains on small (3,3) single walled carbon nanotube (SWCNT) respectivelly. All calculations were performed via DFT theory using WIEN2K code. For the calculations of electronic structure, we perform GGA with TB-mBJ exchange potential and for the thermoelectric calculations were performed in semi-classical Boltzmann transport theory. Our results show that all structures are energetically stable. The electronic behaviour of (3,3) SWCNT transforms from semiconductor to metal in CN nanotube and to topological Weyl semimetal (WSM) state for C2N2 and C4N2 nanotubes. The thermoelectric properties such as electrical conductivity, Seebeck coefficient and power factor are calculated, the results show that the N-doping enhancing the thermoelectric properties of pristine nanotube. The electronic and thermoelectric properties of nitrogen doping SWCNT show promising candidate toward electronic and thermoelectric devices.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116863758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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