Pub Date : 2024-02-06DOI: 10.1051/epjap/2024230213
Eloïse Mestre, Titaïna Gibert, S. Dozias, C. Douat
Carbon monoxide (CO) has anti-inflammatory properties and its production by plasma could be a significant advantage in the field of plasma medicine. We characterized a pulsed kHz-driven plasma jet to produce CO for biomedical applications. With no target interaction, the CO2 conversion into CO, the breakdown voltage and energy delivered to the plasma were investigated for two noble carrier gases: helium and argon. The breakdown voltage and the energy delivered to the plasma in argon gas were twice as high as in helium. The breakdown voltage was barely affected by the gas flow rate and the applied voltage, while it decreased slightly with the excitation frequency because the amount of residual charges increases with the frequency. However, the energy delivered to the plasma was not particularly affected by a change in frequency or gas flow rate, while it increased linearly with the applied voltage. CO production rose from a couple of ppm to about 2000 ppm for a specific energy input from 2 to 2000 J/L (5 x 10-4 to 5200 x 10-4 eV/(atom or molecule)), making this plasma source safe in terms of CO production for biomedical applications. Unlike literature results, the nature of the noble carrier gas did not have an impact on CO production. The CO concentration produced with 0.3% CO2 admixture increased linearly with the specific energy input (SEI) until reaching a plateau at about 70%. This implies that loss processes were negligible and that CO2 dissociation was mainly due to energetic particles such as electrons and excited noble atoms. The conversion decreased with the ratio of CO2. Helium and argon as carrier gases are equivalent in terms of CO production and the CO concentration can be controlled by the SEI and the ratio of CO2.
一氧化碳（CO）具有抗炎特性，利用等离子体生产一氧化碳可能是等离子体医学领域的一大优势。我们对用于生物医学应用的脉冲千赫驱动等离子体射流生产一氧化碳进行了鉴定。在没有目标相互作用的情况下，我们研究了两种惰性载气：氦气和氩气的二氧化碳转化为一氧化碳的过程、击穿电压以及等离子体的能量。氩气的击穿电压和等离子体的能量是氦气的两倍。击穿电压几乎不受气体流速和外加电压的影响，但会随着激励频率的增加而略有下降，因为残余电荷量会随着频率的增加而增加。然而，等离子体的能量并没有受到频率或气体流速变化的特别影响，而是随着施加电压的增加而线性增加。当输入的特定能量从 2 到 2000 J/L（5 x 10-4 到 5200 x 10-4 eV/（原子或分子））时，CO 的产生量从几 ppm 上升到大约 2000 ppm，这使得这种等离子体源在生物医学应用中产生 CO 是安全的。与文献结果不同的是，惰性载气的性质并不影响 CO 的产生。在掺入 0.3% CO2 的情况下，产生的 CO 浓度随着比能量输入（SEI）的增加而线性增加，直至达到约 70% 的高点。这意味着损耗过程可以忽略不计，二氧化碳的解离主要是由电子和受激惰性原子等高能粒子引起的。转化率随着二氧化碳比例的增加而降低。作为载气的氦气和氩气在产生 CO 方面是等效的，CO 的浓度可由 SEI 和 CO2 的比例控制。
{"title":"Comparison of helium and argon for the production of carbon monoxide (CO) by a plasma jet for biomedical applications","authors":"Eloïse Mestre, Titaïna Gibert, S. Dozias, C. Douat","doi":"10.1051/epjap/2024230213","DOIUrl":"https://doi.org/10.1051/epjap/2024230213","url":null,"abstract":"Carbon monoxide (CO) has anti-inflammatory properties and its production by plasma could be a significant advantage in the field of plasma medicine. We characterized a pulsed kHz-driven plasma jet to produce CO for biomedical applications. With no target interaction, the CO2 conversion into CO, the breakdown voltage and energy delivered to the plasma were investigated for two noble carrier gases: helium and argon. \u0000The breakdown voltage and the energy delivered to the plasma in argon gas were twice as high as in helium. The breakdown voltage was barely affected by the gas flow rate and the applied voltage, while it decreased slightly with the excitation frequency because the amount of residual charges increases with the frequency. \u0000However, the energy delivered to the plasma was not particularly affected by a change in frequency or gas flow rate, while it increased linearly with the applied voltage. \u0000CO production rose from a couple of ppm to about 2000 ppm for a specific energy input from 2 to 2000 J/L (5 x 10-4 to 5200 x 10-4 eV/(atom or molecule)), making this plasma source safe in terms of CO production for biomedical applications. \u0000Unlike literature results, the nature of the noble carrier gas did not have an impact on CO production. The CO concentration produced with 0.3% CO2 admixture increased linearly with the specific energy input (SEI) until reaching a plateau at about 70%. This implies that loss processes were negligible and that CO2 dissociation was mainly due to energetic particles such as electrons and excited noble atoms. The conversion decreased with the ratio of CO2. Helium and argon as carrier gases are equivalent in terms of CO production and the CO concentration can be controlled by the SEI and the ratio of CO2.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"46 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139862174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-06DOI: 10.1051/epjap/2024230213
Eloïse Mestre, Titaïna Gibert, S. Dozias, C. Douat
Carbon monoxide (CO) has anti-inflammatory properties and its production by plasma could be a significant advantage in the field of plasma medicine. We characterized a pulsed kHz-driven plasma jet to produce CO for biomedical applications. With no target interaction, the CO2 conversion into CO, the breakdown voltage and energy delivered to the plasma were investigated for two noble carrier gases: helium and argon. The breakdown voltage and the energy delivered to the plasma in argon gas were twice as high as in helium. The breakdown voltage was barely affected by the gas flow rate and the applied voltage, while it decreased slightly with the excitation frequency because the amount of residual charges increases with the frequency. However, the energy delivered to the plasma was not particularly affected by a change in frequency or gas flow rate, while it increased linearly with the applied voltage. CO production rose from a couple of ppm to about 2000 ppm for a specific energy input from 2 to 2000 J/L (5 x 10-4 to 5200 x 10-4 eV/(atom or molecule)), making this plasma source safe in terms of CO production for biomedical applications. Unlike literature results, the nature of the noble carrier gas did not have an impact on CO production. The CO concentration produced with 0.3% CO2 admixture increased linearly with the specific energy input (SEI) until reaching a plateau at about 70%. This implies that loss processes were negligible and that CO2 dissociation was mainly due to energetic particles such as electrons and excited noble atoms. The conversion decreased with the ratio of CO2. Helium and argon as carrier gases are equivalent in terms of CO production and the CO concentration can be controlled by the SEI and the ratio of CO2.
一氧化碳（CO）具有抗炎特性，利用等离子体生产一氧化碳可能是等离子体医学领域的一大优势。我们对用于生物医学应用的脉冲千赫驱动等离子体射流生产一氧化碳进行了鉴定。在没有目标相互作用的情况下，我们研究了两种惰性载气：氦气和氩气的二氧化碳转化为一氧化碳的过程、击穿电压以及等离子体的能量。氩气的击穿电压和等离子体的能量是氦气的两倍。击穿电压几乎不受气体流速和外加电压的影响，但会随着激励频率的增加而略有下降，因为残余电荷量会随着频率的增加而增加。然而，等离子体的能量并没有受到频率或气体流速变化的特别影响，而是随着施加电压的增加而线性增加。当输入的特定能量从 2 到 2000 J/L（5 x 10-4 到 5200 x 10-4 eV/（原子或分子））时，CO 的产生量从几 ppm 上升到大约 2000 ppm，这使得这种等离子体源在生物医学应用中产生 CO 是安全的。与文献结果不同的是，惰性载气的性质并不影响 CO 的产生。在掺入 0.3% CO2 的情况下，产生的 CO 浓度随着比能量输入（SEI）的增加而线性增加，直至达到约 70% 的高点。这意味着损耗过程可以忽略不计，二氧化碳的解离主要是由电子和受激惰性原子等高能粒子引起的。转化率随着二氧化碳比例的增加而降低。作为载气的氦气和氩气在产生 CO 方面是等效的，CO 的浓度可由 SEI 和 CO2 的比例控制。
{"title":"Comparison of helium and argon for the production of carbon monoxide (CO) by a plasma jet for biomedical applications","authors":"Eloïse Mestre, Titaïna Gibert, S. Dozias, C. Douat","doi":"10.1051/epjap/2024230213","DOIUrl":"https://doi.org/10.1051/epjap/2024230213","url":null,"abstract":"Carbon monoxide (CO) has anti-inflammatory properties and its production by plasma could be a significant advantage in the field of plasma medicine. We characterized a pulsed kHz-driven plasma jet to produce CO for biomedical applications. With no target interaction, the CO2 conversion into CO, the breakdown voltage and energy delivered to the plasma were investigated for two noble carrier gases: helium and argon. \u0000The breakdown voltage and the energy delivered to the plasma in argon gas were twice as high as in helium. The breakdown voltage was barely affected by the gas flow rate and the applied voltage, while it decreased slightly with the excitation frequency because the amount of residual charges increases with the frequency. \u0000However, the energy delivered to the plasma was not particularly affected by a change in frequency or gas flow rate, while it increased linearly with the applied voltage. \u0000CO production rose from a couple of ppm to about 2000 ppm for a specific energy input from 2 to 2000 J/L (5 x 10-4 to 5200 x 10-4 eV/(atom or molecule)), making this plasma source safe in terms of CO production for biomedical applications. \u0000Unlike literature results, the nature of the noble carrier gas did not have an impact on CO production. The CO concentration produced with 0.3% CO2 admixture increased linearly with the specific energy input (SEI) until reaching a plateau at about 70%. This implies that loss processes were negligible and that CO2 dissociation was mainly due to energetic particles such as electrons and excited noble atoms. The conversion decreased with the ratio of CO2. Helium and argon as carrier gases are equivalent in terms of CO production and the CO concentration can be controlled by the SEI and the ratio of CO2.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"73 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139802372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-22DOI: 10.1051/epjap/2024230162
Ming Shi, Weimin Zhang, Ling Wang, Fan Zhang, Jin Hou, Chunyong Yang
Nonmagnetic electrical heating and temperature sensing chip fabricated on quartz substrate is developed, and a high-precision digital temperature control system is designed based on this chip. The heating resistance and temperature sensing resistance are prepared by depositing two layers of Ti/Pt alloy electrodes on quartz substrate through magnetic field cancellation design. The temperature coefficient of fabricated Ti/Pt temperature sensing resistance is +0.197%/℃. The simulation results show that the residual magnetic field generated by the heating current in the atomic gas chamber closely adjacent to the chip is less than 0.1nT. Temperature control in the range of 100~150℃ is realized, and the temperature stability is about 0.02℃. Due to the high light transmittance of quartz glass, this heating chip has significant advantages for optical integration and miniaturization of atomic magnetometers.
{"title":"Temperature control of atomic gas chamber using a non magnetic heating chip fabricated on quartz substrate","authors":"Ming Shi, Weimin Zhang, Ling Wang, Fan Zhang, Jin Hou, Chunyong Yang","doi":"10.1051/epjap/2024230162","DOIUrl":"https://doi.org/10.1051/epjap/2024230162","url":null,"abstract":"Nonmagnetic electrical heating and temperature sensing chip fabricated on quartz substrate is developed, and a high-precision digital temperature control system is designed based on this chip. The heating resistance and temperature sensing resistance are prepared by depositing two layers of Ti/Pt alloy electrodes on quartz substrate through magnetic field cancellation design. The temperature coefficient of fabricated Ti/Pt temperature sensing resistance is +0.197%/℃. The simulation results show that the residual magnetic field generated by the heating current in the atomic gas chamber closely adjacent to the chip is less than 0.1nT. Temperature control in the range of 100~150℃ is realized, and the temperature stability is about 0.02℃. Due to the high light transmittance of quartz glass, this heating chip has significant advantages for optical integration and miniaturization of atomic magnetometers.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"25 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139523312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-17DOI: 10.1051/epjap/2024230092
Ail Jabbar Fraih, Najlaa Jerjack Abdullah, Shaymaa Saadoon Hashim
Molybdenum disulfide (MoS2) is widely employed as a photoanode in photoelectrochemical (PEC) tests due to its energy gap in the visible region and strong interaction with light. In this work, three-dimensional (3D) flower-like MoS2 heterostructures have been introduced by the CVD method and decorated with copper (I) oxide (Cu2O) nanoparticles synthesized by electrodeposition. SEM, XRD, Raman, UV-Visible, current-potential and EIS analyses have been performed to evaluate the heterostructure. The results show that the MoS2/Cu2O heterostructure is not only well-formed but associated with a 61% increase in photocurrent density compared to MoS2. This is due to the smaller charge transfer resistance and effective charge separation in the heterostructure compared to MoS2, based on the EIS analysis and corresponding band energy diagram. A cyclic test of the electrode also shows its excellent stability, making it suitable for practical applications.
二硫化钼（MoS2）因其在可见光区的能隙以及与光的强相互作用而被广泛用作光电化学（PEC）试验中的光阳极。本研究采用 CVD 方法制备了三维（3D）花状 MoS2 异质结构，并用电沉积法合成的纳米氧化铜（Cu2O）进行装饰。对异质结构进行了 SEM、XRD、拉曼、紫外可见光、电流电位和 EIS 分析。结果表明，与 MoS2 相比，MoS2/Cu2O 异质结构不仅形成良好，而且光电流密度增加了 61%。这是由于根据 EIS 分析和相应的能带图，与 MoS2 相比，异质结构中的电荷转移电阻更小，电荷分离更有效。对电极的循环测试也显示了其出色的稳定性，使其适合实际应用。
{"title":"Flower-like 3D MoS2/Cu2O hybrids with enhanced photoelectrochemical performance","authors":"Ail Jabbar Fraih, Najlaa Jerjack Abdullah, Shaymaa Saadoon Hashim","doi":"10.1051/epjap/2024230092","DOIUrl":"https://doi.org/10.1051/epjap/2024230092","url":null,"abstract":"Molybdenum disulfide (MoS2) is widely employed as a photoanode in photoelectrochemical (PEC) tests due to its energy gap in the visible region and strong interaction with light. In this work, three-dimensional (3D) flower-like MoS2 heterostructures have been introduced by the CVD method and decorated with copper (I) oxide (Cu2O) nanoparticles synthesized by electrodeposition. SEM, XRD, Raman, UV-Visible, current-potential and EIS analyses have been performed to evaluate the heterostructure. The results show that the MoS2/Cu2O heterostructure is not only well-formed but associated with a 61% increase in photocurrent density compared to MoS2. This is due to the smaller charge transfer resistance and effective charge separation in the heterostructure compared to MoS2, based on the EIS analysis and corresponding band energy diagram. A cyclic test of the electrode also shows its excellent stability, making it suitable for practical applications.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"57 36","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139527687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-17DOI: 10.1051/epjap/2024230173
Dinh Ngoc Quy, Vu Quoc Trung, Nguyen Dang Phu, Pham Van Hai, Nguyen Manh Nghia, Luc Huy Hoang
The SnO2/g-C3N4 nanocomposite materials were successfully synthesized via the solid reaction and sonochemistry methods. The properties of the obtained product were investigated using several methods: X-ray diffraction, UV-vis diffuse reflectance spectroscopy, and Scanning electron microscope. The photocatalytic properties of the samples were evaluated through the photodegradation of Rhodamine B solution. The results demonstrate that the SnO2/g-C3N4 prepared by the sonochemistry method exhibits higher photocatalytic activity than that prepared by the solid reaction method. This enhanced photocatalytic activity is attributed to the formation of heterostructures between SnO2 and g-C3N4 materials, resulting in the efficient separation of photo-generated electron-hole pairs. Furthermore, the nanocomposite exhibits a larger specific surface area compared to the product obtained through the solid reaction method.
{"title":"Enhanced photocatalytic activity of SnO2/g-C3N4 nanocomposite synthesized using sonochemistry method","authors":"Dinh Ngoc Quy, Vu Quoc Trung, Nguyen Dang Phu, Pham Van Hai, Nguyen Manh Nghia, Luc Huy Hoang","doi":"10.1051/epjap/2024230173","DOIUrl":"https://doi.org/10.1051/epjap/2024230173","url":null,"abstract":"The SnO2/g-C3N4 nanocomposite materials were successfully synthesized via the solid reaction and sonochemistry methods. The properties of the obtained product were investigated using several methods: X-ray diffraction, UV-vis diffuse reflectance spectroscopy, and Scanning electron microscope. The photocatalytic properties of the samples were evaluated through the photodegradation of Rhodamine B solution. The results demonstrate that the SnO2/g-C3N4 prepared by the sonochemistry method exhibits higher photocatalytic activity than that prepared by the solid reaction method. This enhanced photocatalytic activity is attributed to the formation of heterostructures between SnO2 and g-C3N4 materials, resulting in the efficient separation of photo-generated electron-hole pairs. Furthermore, the nanocomposite exhibits a larger specific surface area compared to the product obtained through the solid reaction method.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"24 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139527316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-25DOI: 10.1051/epjap/2023230126
R. Ansari, Ajit Kumar, Kedar Singh, Horesh Kumar
Se96-xSn4Sbx (x=0, 2, 4, 6, and 8) glassy alloys were prepared using melt quench technique. Thermal measurements were carried out using differential scanning calorimetry (DSC) in non-isothermal mode. Kissinger and Moynihan methods are used for glass transition kinetics, while Kissinger, Takhor, and Augis–Bennet methods are used to study crystallization kinetics. The inclusion of Sb in the alloy increased the glass transition temperature (Tg), activation energy of glass transition (Et), and activation energy of crystallisation (Ec). The chemical bond approach has been used to explain the results. The rising trend of Ec is explained by the production of SnSe4/2 structural units with energies greater than those of Se–Se and Se–Sb bonds, increasing the degree of cross-linking. The dimensionality of crystal growth changes from one to two with the addition of Sb to the Se-Sn alloy. The criterion for thermal stability was addressed by using the enthalpy emitted during the crystallization process. In addition, Kubelka-Munk transformation and Tauc plots were used to calculate the band gaps. The energy gap (Eg) decreases from 1.90 to 1.54 eV as the Sb concentration increases from 0 to 8 atm%.
{"title":"Sb induced effect on Glass transition, Crystallization kinetics and Optical properties of Se96Sn4 alloy","authors":"R. Ansari, Ajit Kumar, Kedar Singh, Horesh Kumar","doi":"10.1051/epjap/2023230126","DOIUrl":"https://doi.org/10.1051/epjap/2023230126","url":null,"abstract":"Se96-xSn4Sbx (x=0, 2, 4, 6, and 8) glassy alloys were prepared using melt quench technique. Thermal measurements were carried out using differential scanning calorimetry (DSC) in non-isothermal mode. Kissinger and Moynihan methods are used for glass transition kinetics, while Kissinger, Takhor, and Augis–Bennet methods are used to study crystallization kinetics. The inclusion of Sb in the alloy increased the glass transition temperature (Tg), activation energy of glass transition (Et), and activation energy of crystallisation (Ec). The chemical bond approach has been used to explain the results. The rising trend of Ec is explained by the production of SnSe4/2 structural units with energies greater than those of Se–Se and Se–Sb bonds, increasing the degree of cross-linking. The dimensionality of crystal growth changes from one to two with the addition of Sb to the Se-Sn alloy. The criterion for thermal stability was addressed by using the enthalpy emitted during the crystallization process. In addition, Kubelka-Munk transformation and Tauc plots were used to calculate the band gaps. The energy gap (Eg) decreases from 1.90 to 1.54 eV as the Sb concentration increases from 0 to 8 atm%.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"53 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138943625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-19DOI: 10.1051/epjap/2023230208
S. Koumetz
This research shows that the diffusion of grown-in and implanted Be atoms in III-V considered semiconductor materials, taking place during the RTA process, is perfectly well explained by the “full” version of the kick-out mechanism operating through singly positively ionized Be interstitials and group III self-interstitial ions in all their states of positive charge including neutral. Numerical solutions of the differential equations, corresponding to the considered system of diffusion reactions, have been calculated using the finite difference approach and our elaborate finite difference-Bairstow method. Such a model naturally emerges from most research works, including ours, in the considered field, over the last decades and makes it possible to “reconcile” their different diffusion models. In this study, we also present and analyze the SIMS profiles of the distribution of implanted Be in GaAs at an energy of 100 keV with a high dose of and annealed at temperatures ranging from 700 to 850 °C for à time ranging from 60 to 240s. Keywords: Diffusion, semiconductors, GSMBE, SIMS, RTA.
这项研究表明，在 RTA 过程中，III-V 类半导体材料中生长和植入的 Be 原子的扩散完全可以用 "完整 "版本的 "踢出 "机制来解释，该机制通过单个正电离 Be 间质和所有正电荷状态（包括中性）的 III 族自间质离子运行。使用有限差分法和我们精心设计的有限差分-Bairstow 方法计算了与所考虑的扩散反应系统相对应的微分方程的数值解。在过去的几十年中，包括我们在内的大多数研究工作都在所考虑的领域中采用了这样的模型，这使得 "协调 "不同的扩散模型成为可能。在这项研究中，我们还介绍并分析了在能量为 100 keV、高剂量、退火温度为 700 至 850 ℃、退火时间为 60 至 240 秒的条件下，砷化镓中植入的铍的分布 SIMS 曲线。关键词扩散、半导体、GSMBE、SIMS、RTA。
{"title":"Diffusion models of grown-in and implanted p-type dopant in III-V semiconductor compounds","authors":"S. Koumetz","doi":"10.1051/epjap/2023230208","DOIUrl":"https://doi.org/10.1051/epjap/2023230208","url":null,"abstract":"This research shows that the diffusion of grown-in and implanted Be atoms in III-V considered semiconductor materials, taking place during the RTA process, is perfectly well explained by the “full” version of the kick-out mechanism operating through singly positively ionized Be interstitials and group III self-interstitial ions in all their states of positive charge including neutral. Numerical solutions of the differential equations, corresponding to the considered system of diffusion reactions, have been calculated using the finite difference approach and our elaborate finite difference-Bairstow method. Such a model naturally emerges from most research works, including ours, in the considered field, over the last decades and makes it possible to “reconcile” their different diffusion models. In this study, we also present and analyze the SIMS profiles of the distribution of implanted Be in GaAs at an energy of 100 keV with a high dose of and annealed at temperatures ranging from 700 to 850 °C for à time ranging from 60 to 240s. \u0000Keywords: Diffusion, semiconductors, GSMBE, SIMS, RTA. \u0000","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":" 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138960060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-29DOI: 10.1051/epjap/2023230120
Sheng Xu, Y. Gu, Jun Bian, Xiaoshan Wu
Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1-xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1-xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1-xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr doping. Ferromagnetic semiconductors are first predicted in Zr-doped SrRuO3, which may have potential applications in spintronic devices.
通过第一原理计算，我们研究了 SrRu1-xZrxO3 （0 ≤ x ≤ 1）的结构、电和磁特性。自旋极化计算表明，SrRu1-xZrxO3 在 x = 0 时是铁磁性金属，在 x = 0.125 和 0.25 时是铁磁性半导体，在 x = 0.5 时是反铁磁性半导体，在 x = 1 时是非磁性绝缘体，这与现有实验结果一致。随着 Zr 含量的增加，SrRu1-xZrxO3 的晶格参数和带隙增大，而反铁磁态和铁磁态之间的能量差减小。通过 Ru-O 和 Zr-O 键，费米水平附近的 Ru 4d 和 Zr 4d 态之间的杂化变得很强。因此，Ru 4d 态分裂，然后在 x = 0.125 处由于掺杂 Zr 而发生金属-绝缘体转变。在掺杂 Zr 的 SrRuO3 中首次预言了铁磁半导体，这可能会在自旋电子器件中得到潜在的应用。
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Pub Date : 2023-11-23DOI: 10.1051/epjap/2023230168
P. Pavani Koteswari Devi, A. Venkata Sekhar, V. Ravi kumar, N. Venkatramaiah, V. Ravi kumar, N. Veeraiah
This study encompasses the synthesis, characterization, and analysis of photoluminescence (PL) spectra for Li2O−HfO2−SiO2−Yb2O3 glass ceramics sensitized with small amounts of Au2O3. The utilization of results of XRD and X-ray photoelectron spectroscopy (XPS) studies unveiled a progressive reduction of Au3+ ions into Au0 metallic particles (MPs) with increase of Au2O3 content. Investigations into the infrared spectra highlighted a growing concentration of induced defects in the samples due to the increased proportion of Au0 MPs. Optical absorption (OA) spectra exhibited a distinct band attributed to the 2F7/2 → 2F5/2 transition of Yb3+ within wavelength range of 800-980 nm. Furthermore, a wide absorption band linked to the surface plasmon resonance (SPR) of Au0 MPs was identified in the visible region. PL spectra, recorded at λexc= 450 nm, revealed a band between 980 to 1025 nm, associated with the 2F5/2 → 2F7/2 transition of Yb3+ ions. Another emission band was observed due to the sp → d transition of Au0 MPs within the visible region. Observed augmentation in PL emission from Yb3+ ions in the NIR range was ascribed to the energy transfer from Au0 MPs to Yb3+ ions. Ultimately, it was deduced that Au0 MPs played a pivotal role in enhancing the PL output of Yb3+ ions in the Li2O−HfO2−SiO2 glass ceramic. Thus, glass ceramics incorporating an optimal concentration of Au2O3 hold significant potential as materials for NIR lasers.
{"title":"Influence of Au0 metallic particles on NIR laser emission of Yb3+ ions in Li2O−HfO2−SiO2 glass ceramic","authors":"P. Pavani Koteswari Devi, A. Venkata Sekhar, V. Ravi kumar, N. Venkatramaiah, V. Ravi kumar, N. Veeraiah","doi":"10.1051/epjap/2023230168","DOIUrl":"https://doi.org/10.1051/epjap/2023230168","url":null,"abstract":"This study encompasses the synthesis, characterization, and analysis of photoluminescence (PL) spectra for Li2O−HfO2−SiO2−Yb2O3 glass ceramics sensitized with small amounts of Au2O3. The utilization of results of XRD and X-ray photoelectron spectroscopy (XPS) studies unveiled a progressive reduction of Au3+ ions into Au0 metallic particles (MPs) with increase of Au2O3 content. Investigations into the infrared spectra highlighted a growing concentration of induced defects in the samples due to the increased proportion of Au0 MPs. Optical absorption (OA) spectra exhibited a distinct band attributed to the 2F7/2 → 2F5/2 transition of Yb3+ within wavelength range of 800-980 nm. Furthermore, a wide absorption band linked to the surface plasmon resonance (SPR) of Au0 MPs was identified in the visible region. PL spectra, recorded at λexc= 450 nm, revealed a band between 980 to 1025 nm, associated with the 2F5/2 → 2F7/2 transition of Yb3+ ions. Another emission band was observed due to the sp → d transition of Au0 MPs within the visible region. Observed augmentation in PL emission from Yb3+ ions in the NIR range was ascribed to the energy transfer from Au0 MPs to Yb3+ ions. Ultimately, it was deduced that Au0 MPs played a pivotal role in enhancing the PL output of Yb3+ ions in the Li2O−HfO2−SiO2 glass ceramic. Thus, glass ceramics incorporating an optimal concentration of Au2O3 hold significant potential as materials for NIR lasers.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"3 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139245909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-23DOI: 10.1051/epjap/2023230152
Beatrice Fragge, J. Sokoloff, O. Rouzaud, Olivier Pascal, Mikaël Orain
The high demand for a new ignition device for aeronautical engines has motivated the study on an innovative microwave approach, presented in this paper. A dedicated experimental set-up is presented in which we demonstrate the successful ignition of a kerosene spray by a remotely excited microwave plasma. This plasma is created in a Split Ring Resonator (SRR) gap, placed in a copper cavity, in air at atmospheric conditions at the frequency of f=2.8467 GHz and a pulsed power injected into the cavity of P~1500 W. This work is part of a project to apply time reversal to create the plasma in a further study. The results presented here will be used for the following of the project.
{"title":"Fuel Ignition using Remote Generation of Microwave Plasma in Air at Atmospheric Pressure","authors":"Beatrice Fragge, J. Sokoloff, O. Rouzaud, Olivier Pascal, Mikaël Orain","doi":"10.1051/epjap/2023230152","DOIUrl":"https://doi.org/10.1051/epjap/2023230152","url":null,"abstract":"The high demand for a new ignition device for aeronautical engines has motivated the study on an innovative microwave approach, presented in this paper. A dedicated experimental set-up is presented in which we demonstrate the successful ignition of a kerosene spray by a remotely excited microwave plasma. This plasma is created in a Split Ring Resonator (SRR) gap, placed in a copper cavity, in air at atmospheric conditions at the frequency of f=2.8467 GHz and a pulsed power injected into the cavity of P~1500 W. This work is part of a project to apply time reversal to create the plasma in a further study. The results presented here will be used for the following of the project.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139243251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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