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Zinc ferrite ZnxFe3–xO4 nanocomposites as efficient photocatalysts: a study of synthesis, properties and catalytic activity 铁氧体锌- fe3 - xo4纳米复合材料作为高效光催化剂的合成、性能和催化活性研究
Pub Date : 2023-09-01 DOI: 10.1051/epjap/2023230107
Mahdiyeh Karami, Salar Karim Fatah, H. Amrollahi Bioki, M. Hakimi
Zinc ferrite nanocomposites ZnxFe3-xO4 (x=0, 0.5, 0.7, 0.8, 0.9, and 1) were successfully synthesized using the sol-gel co-precipitation technique. The physicochemical properties of the resulting nanocomposites were investigated using X-ray diffraction (XRD), Rietveld refinement technique (GSASII), scanning electron microscopy (SEM), Fourier transforms infrared (FTIR) spectrometry, UV/vis spectroscopy, and a vibrating sample magnetometer (VSM). The predominant phase in all of the samples was found to be ZnFe2O4 spinel, with other phases such as Fe2O3 and Fe3O4 also present. The crystallite size ranged from 6.87 to 10.88 nm, and the resulting spinel phase powder had grain sizes between 100 and 220 nm. The lattice constants and coercivity of the samples increased with increasing Zn concentration, while saturation magnetization decreased. The photocatalytic activity of the nanocomposites for the photo-degradation of methylene blue (MB) aqueous solution was investigated, and the ZnFe2O4 nanocomposites showed the highest MB degradation rate and efficiency (92%) within 60 minutes of UV and visible light irradiation. These results demonstrate the potential of ZnFe2O4 nanocomposites synthesized via the sol-gel co-precipitation technique for photocatalytic applications.
采用溶胶-凝胶共沉淀法成功合成了锌铁氧体纳米复合材料ZnxFe3-xO4 (x= 0,0.5, 0.7, 0.8, 0.9, 1)。利用x射线衍射(XRD)、Rietveld细化技术(GSASII)、扫描电子显微镜(SEM)、傅里叶变换红外光谱(FTIR)、紫外/可见光谱和振动样品磁强计(VSM)对所得纳米复合材料的物理化学性质进行了研究。所有样品的主要相均为ZnFe2O4尖晶石,同时存在Fe2O3和Fe3O4等其他相。晶粒尺寸在6.87 ~ 10.88 nm之间,晶相粉末粒径在100 ~ 220 nm之间。随着Zn浓度的增加,样品的晶格常数和矫顽力增大,饱和磁化强度减小。研究了纳米复合材料光催化降解亚甲基蓝(MB)水溶液的活性,发现ZnFe2O4纳米复合材料在紫外和可见光照射60 min内对亚甲基蓝的降解率和效率最高(92%)。这些结果表明,通过溶胶-凝胶共沉淀法合成的ZnFe2O4纳米复合材料具有光催化应用的潜力。
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引用次数: 0
Influence of yttrium element on the crystallization performance of ZnSb alloy for phase change memory application 钇元素对相变记忆用ZnSb合金结晶性能的影响
Pub Date : 2023-08-23 DOI: 10.1051/epjap/2023230054
Bowen Fu, Weihua Wu, Pei Zhang, Han Gu, Xiaochen Zhou, Xiaoqin Zhu
The crystallization behavior and electrical performance of Y-doped Zn15Sb85 phase change material were proposed and experimental examined. The relationship between the resistance and temperature reveals that the Y dopant is able to enhancing the thermal stability (Tc~237 °C, T10~169 °C) and resistivity (Ra~105 Ω, Rc~102 Ω) of Zn15Sb85 films, which are suitable for automobile design and surface mount technology. XRD results indicate that the Y dopant could effectively inhibit grain growth and reduce grain size. Meanwhile, XPS illustrates that Y is more likely to form bonds with Sb. Further, the resistance drift index and surface roughness become small after doping Y element, which is of great benefit to improving the reliability and electrical performance of the device. Moreover, T-shaped phase change memory cells based on Y0.36(Zn15Sb85)0.64 film were also built and analyzed. The characteristic of current - voltage (I-V) and resistance - voltage (R-V) prove that the SET and RESET operations can be achieved by electric induction, implying the excellent candidate of Y-doped Zn15Sb85 material for high thermal and high reliability application.
提出了掺y Zn15Sb85相变材料的结晶行为和电学性能,并进行了实验研究。电阻与温度的关系表明,Y掺杂能提高Zn15Sb85薄膜的热稳定性(Tc~237℃,T10~169℃)和电阻率(Ra~105 Ω, Rc~102 Ω),适用于汽车设计和表面贴装技术。XRD结果表明,Y掺杂剂能有效抑制晶粒生长,减小晶粒尺寸。同时,XPS表明,Y更容易与Sb形成键。并且,掺杂Y元素后,器件的电阻漂移指数和表面粗糙度变小,这对提高器件的可靠性和电性能有很大的好处。构建了基于Y0.36(Zn15Sb85)0.64薄膜的t型相变存储单元,并对其进行了分析。电流-电压(I-V)和电阻-电压(R-V)的特性证明了电磁感应可以实现SET和RESET操作,这意味着掺y Zn15Sb85材料是高热和高可靠性应用的优秀候选国。
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引用次数: 0
Acoustophoresis Separation of Particles Based on Motion Modes via Tilted-Angle Standing Surface Acoustic Wave Driven by a Unidirectional Transducer 基于单向换能器驱动的倾斜驻面声波运动模式的粒子声阻抗分离
Pub Date : 2023-08-10 DOI: 10.1051/epjap/2023230032
Cheng Chen, Yuting Wang, Keyu An, Zhongyuan Ren
Acoustophoresis separation technique has attracted great attention due to its superior properties, such as biocompatibility, non-contact, label-free and high-efficiency. In this paper, separation of particles based on motion modes via tilted-angle standing surface acoustic wave (TaSSAW) driven by a unidirectional transducer is developed. It’s verified that the designed electrode width controlled unidirectional transducers are effective to improve the acoustic wave utilization rate and increase the acoustic radiation force. The results show that when the density and compressibility of the particles are close to those of the fluid and the particle shape is close to spherical, the influences of fluid viscosity and particle shape on the acoustic radiation force are negligible. It’s found that in the TaSSAW system the motion modes of the particles are divided into locked mode and drift mode, and they depend on the fluid velocity, acoustic field intensity and title angle. polystyrene (PS) particles with radii of 4 and 5 μm are separated based on the differences of motion modes. For further smaller size difference (4.5 and 5μm) particles, the separation is also realized successfully by making particles move in the same drift mode. The proposed TaSSAW system has broad application prospects in biology and chemistry.
声阻抗分离技术因其生物相容性好、无接触、无标签、高效等优点而受到广泛关注。本文提出了一种基于运动模式的基于单向换能器驱动的倾斜驻面声波(TaSSAW)分离粒子的方法。实验结果表明,所设计的电极宽度可控单向换能器能有效提高声波利用率,增加声辐射力。结果表明,当颗粒密度和压缩率接近流体密度和压缩率,颗粒形状接近球形时,流体粘度和颗粒形状对声辐射力的影响可以忽略不计。研究发现,在TaSSAW系统中,粒子的运动模式可分为锁定模式和漂移模式,它们与流体速度、声场强度和标题角有关。基于运动模式的不同,对半径为4 μm和5 μm的聚苯乙烯(PS)颗粒进行了分离。对于尺寸差更小的颗粒(4.5 μm和5μm),通过使颗粒以相同的漂移方式运动,也成功地实现了分离。所提出的TaSSAW体系在生物化学领域具有广阔的应用前景。
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引用次数: 0
Ionic wind velocity and energy efficiency improvement in needle-net ionic wind generator by electrical field optimization 电场优化提高针网式离子风力发电机的离子风速和能效
Pub Date : 2023-08-09 DOI: 10.1051/epjap/2023230106
Dongxuan Zhang, Fan Bu, Yulei Zhao, Z. Fang, Feng Liu
Ionic wind produced by high voltage discharge has been proved as a promising technique in heat dissipation, food drying, electrostatic precipitation and air propulsion. On the other hand, the low wind velocity and the low energy efficiency of the ionic wind generators limit their performance in practical industrial applications. To improve this, a single needle-net electrode structure ionic wind generator driven by positive DC voltage is constructed and the effects of the applied voltage and the needle-net distance on the discharge characteristics have been investigated. The results show that with the increase of the applied voltage from 4 kV to 11 kV, the discharge shows four stages, burst pulse, streamer corona, glow corona and spark discharge, and the wind velocity increases monotonously and reach 1.90 m/s at 11 kV. At the same applied voltage, the shorter needle-net distance leads to the larger wind velocity. At 15 mm needle-net distance, the needle-net electrode structure ionic wind generator shows a maximum energy efficiency value of 2.19%. A metal circular plate is attached on the needle electrode to enhance the electric field in discharge spacing. It is found that the wind velocity and energy efficiency can be improved from 1.90 m/s to 2.35 m/s, and 1.87% to 3.14%, at same applied voltage and needle-net distance. The cooling experiment shows that the ionic wind generator with metal circular plate needle-net electrode has better heat dissipation effect.
高压放电产生的离子风已被证明在散热、食品干燥、静电沉淀和空气推进等方面具有广阔的应用前景。另一方面,离子风力发电机的低风速和低能量效率限制了其在实际工业应用中的性能。为此,构建了直流正电压驱动的单针网电极结构离子风力发电机,研究了外加电压和针网距离对其放电特性的影响。结果表明:随着外加电压从4 kV增加到11 kV,放电呈现出爆发脉冲、流晕、辉光电晕和火花放电四个阶段,且风速单调增加,在11 kV时达到1.90 m/s;在相同电压下,针网距离越短,风速越大。在针网距离为15 mm时,针网电极结构离子风力发电机的最大能效值为2.19%。在针电极上安装金属圆形板,以增强放电间距中的电场。结果表明,在相同的电压和针网距离下,风速和能量效率从1.90 m/s提高到2.35 m/s,从1.87%提高到3.14%。冷却实验表明,采用金属圆板针网电极的离子风力发电机具有较好的散热效果。
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引用次数: 0
Crossover from direct to trap assisted Fowler Nordheim (FN) tunneling in CoFeB/MgO/CoFeB magnetic tunnel junctions 在CoFeB/MgO/CoFeB磁性隧道结中,从直接到陷阱的交叉有助于Fowler Nordheim (FN)隧穿
Pub Date : 2023-08-03 DOI: 10.1051/epjap/2023230074
D. Saha, Sang Yeol Lee
Electron conduction mechanisms in CoFeB (0.8-10 nm)/MgO (3nm)/CoFeB (4.2 nm) magnetic tunnel junctions (MTJs) have been investigated in detail. A clear crossover from direct tunnelling to trap assisted Fowler Nordheim (FN) tunneling is observed with increasing bias voltage in all the pristine MTJs. In contrast, FN-like tunneling is completely suppressed in vacuum annealed MTJs, which plausibly indicates diffused interfaces and enhanced trap state density in MgO barrier. In annealed MTJs, beyond the direct tunneling regime, bulk-limited Pool Frenkel emission followed by interface-limited Schottky emission are found to be the dominant transport mechanisms. Simulations of tunnel current density J (V) and differential conductance (dJ/dV) of MTJs have been carried out using Simmons (symmetric rectangular barrier) and Brinkman (asymmetric trapezoidal barrier) model, which provides valuable insights on the barrier height and interface property at the MgO/CoFeB interface. Results of this study might be helpful to further improve CoFeB/MgO based MTJs for efficient implementation in sensors and memory devices.
详细研究了CoFeB (0.8 ~ 10nm)/MgO (3nm)/CoFeB (4.2 nm)磁性隧道结(MTJs)中的电子传导机制。在所有原始mtj中,随着偏置电压的增加,观察到从直接隧穿到陷阱辅助福勒-诺德海姆(FN)隧穿的明显交叉。相反,在真空退火的MTJs中,类fn隧道效应被完全抑制,这可能表明MgO势垒中界面扩散,陷阱态密度增强。在退火MTJs中,除直接隧穿外,主要的输运机制是体受限池Frenkel发射,其次是界面受限Schottky发射。采用Simmons(对称矩形势垒)和Brinkman(不对称梯形势垒)模型对MTJs的隧道电流密度J (V)和差分电导(dJ/dV)进行了模拟,为MgO/CoFeB界面的势垒高度和界面性质提供了有价值的见解。本研究结果可能有助于进一步改进基于CoFeB/MgO的MTJs,以便在传感器和存储器件中高效实现。
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引用次数: 0
Bandgap tuning of Mn-doped of BiFeO3 thin films for Photovoltaic Application 锰掺杂BiFeO3薄膜的光电带隙调谐
Pub Date : 2023-07-19 DOI: 10.1051/epjap/2023230094
Chokalingam Saravanan, P. Balaji Bhargav, V. N, Nafis Ahmed, A. K.,, Balaji C
Mn-doped BiFeO3 (BFO) thin films were prepared on glass substrates using a simple spin coating method, and their structural and optical properties were analyzed. The X-ray diffraction pattern of Mn-doped BFO confirmed the presence of rhombohedral distorted perovskite structure, while FTIR analysis detected the Bi-O and Fe-O bonds in the perovskite structure. The XPS spectra of the Mn-doped BFO thin film provided information on the valence states of Bi, Fe, and Mn based on their respective binding energies. The UV-visible-NIR spectra revealed that the optical band gap of the pristine BFO was 2.17 eV, while that of Mn-doped BFO was 1.65 eV, which is optimum for solar cell absorber layer applications. The decreasing pattern suggests effective Mn doping of BFO.
采用简单的自旋镀膜方法在玻璃衬底上制备了mn掺杂BiFeO3 (BFO)薄膜,并对其结构和光学性能进行了分析。mn掺杂BFO的x射线衍射图证实了钙钛矿结构存在菱面体畸变,FTIR分析检测到钙钛矿结构中存在Bi-O和Fe-O键。掺杂Mn的BFO薄膜的XPS光谱根据其各自的结合能提供了Bi, Fe和Mn的价态信息。紫外-可见-近红外光谱显示,原始BFO的光学带隙为2.17 eV,而mn掺杂BFO的光学带隙为1.65 eV,最适合太阳能电池吸收层的应用。减小的趋势表明BFO有效掺杂了Mn。
{"title":"Bandgap tuning of Mn-doped of BiFeO3 thin films for Photovoltaic Application","authors":"Chokalingam Saravanan, P. Balaji Bhargav, V. N, Nafis Ahmed, A. K.,, Balaji C","doi":"10.1051/epjap/2023230094","DOIUrl":"https://doi.org/10.1051/epjap/2023230094","url":null,"abstract":"Mn-doped BiFeO3 (BFO) thin films were prepared on glass substrates using a simple spin coating method, and their structural and optical properties were analyzed. The X-ray diffraction pattern of Mn-doped BFO confirmed the presence of rhombohedral distorted perovskite structure, while FTIR analysis detected the Bi-O and Fe-O bonds in the perovskite structure. The XPS spectra of the Mn-doped BFO thin film provided information on the valence states of Bi, Fe, and Mn based on their respective binding energies. The UV-visible-NIR spectra revealed that the optical band gap of the pristine BFO was 2.17 eV, while that of Mn-doped BFO was 1.65 eV, which is optimum for solar cell absorber layer applications. The decreasing pattern suggests effective Mn doping of BFO.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122455915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A type-II GeSe/SnTe heterostructure with superior optical absorption and strain tunable photovoltaic properties 一种具有优异光吸收和应变可调光伏性能的ii型GeSe/SnTe异质结构
Pub Date : 2023-06-21 DOI: 10.1051/epjap/2023230029
Junxiang Zhao, Ziyan Yu, Jiawei Chen, Yupeng Su, Jiafu Wang, N. Yu
We constructed the GeSe/SnTe van der Waals (vdW) two-dimensional (2D) heterostructure with the use of the first-principles calculation, which has a 0.481 eV indirect bandgap and the type-II band alignment. The GeSe/SnTe heterostructure has superior wide range light absorption with the maximum value of 8.69 105 cm-1, and the heterostructure also exhibits anisotropic carrier mobilities with the maximum value of 8.36 103 cm2 V-1 s-1. By strain engineering, the band structure of GeSe/SnTe heterostructure is able to be modulated effectively. Moreover, by applying biaxial strain, we can greatly enhance the photoelectric conversion efficiency (PCE) of GeSe/SnTe heterostructure, which can reach 15.29% under 4% tensile strain. Our calculation results reveal that the GeSe/SnTe heterostructure can be considered to apply in the nextgeneration solar cells.
我们利用第一性原理计算构建了GeSe/SnTe范德瓦尔斯(vdW)二维异质结构,该异质结构具有0.481 eV的间接带隙和ii型带向。GeSe/SnTe异质结构具有较好的宽范围光吸收特性,其光吸收最大值为8.69 105 cm-1,其载流子迁移率也具有各向异性,其载流子迁移率最大值为8.36 103 cm2 V-1 s-1。通过应变工程,可以有效地调制GeSe/SnTe异质结构的能带结构。此外,通过施加双轴应变,我们可以大大提高GeSe/SnTe异质结构的光电转换效率(PCE),在4%的拉伸应变下可以达到15.29%。计算结果表明,GeSe/SnTe异质结构可以考虑应用于下一代太阳能电池。
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引用次数: 0
Transformation of mineral matter during pyrolysis, gasification and combustion of biosolid chars 生物固体炭热解、气化和燃烧过程中矿物的转化
Pub Date : 2023-06-21 DOI: 10.1051/epjap/2023230035
Alexander Y Ilyushechkin, San Shwe Hla, L. Schoeman
During thermochemical processing of biosolids in sewage sludge, different forms of phosphor-containing compounds are generated in biosolid chars (biochars). This paper describes how biochar-processing conditions affect the mineral compounds formed under pyrolysis, gasification and combustion of biosolids, and the key factors that influence the kinetics of phase formation. Our results show identified phase transformations through experiments in a laboratory tube furnace followed by X-ray diffraction analysis. Laboratory processing samples were verified and in situ phase transformations were observed through a synchrotron powder diffraction study. It was found that under a neutral atmosphere, crystalline oxide phases formed at lower temperatures and much faster than iron phosphide formed, while gasification and combustion conditions led to the formation of crystalline phases in phosphate forms. These forms of phosphor compounds in by-products of biosolids thermochemical treatment can be used as agricultural fertilizers.
在对污水污泥中的生物固体进行热化学处理的过程中,生物固体炭(生物炭)中会产生不同形式的含磷化合物。本文介绍了生物炭处理条件对生物固体热解、气化和燃烧过程中形成的矿物化合物的影响,以及影响相形成动力学的关键因素。我们的结果表明,通过实验室管炉实验和x射线衍射分析,确定了相变。对实验室加工样品进行了验证,并通过同步加速器粉末衍射研究观察到原位相变。结果表明,在中性气氛下,氧化铁结晶形成的温度比磷化铁低,形成速度比磷化铁快得多,而在气化和燃烧条件下形成磷化铁结晶。生物固体热化学处理副产物中的这些形式的磷化合物可以用作农业肥料。
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引用次数: 0
A three stages transition into chaos for mixed convection nanofluid inside a differentially-heated square ventilated cavity 微分加热方形通风腔内混合对流纳米流体进入混沌的三个阶段
Pub Date : 2023-05-08 DOI: 10.1051/epjap/2023220300
Taghourt Abdeldjalil, S. Aklouche-benouaguef, B. Zeghmati
In this paper we present a numerical study of an unsteady Al2O3 water nanofluid mixed convection in a differentiated square ventilated cavity. The routes from steady-state to chaotic mixed convection state have been also studied for a constant Reynolds Number (Re), Re=50 and Richardson number (Ri) ranging from Ri=40 to Ri=150. The governing equations are solved using an implicit finite-volume scheme and TDMA algorithm. Results are presented through streamlines, isotherms, mean temperature, average Nusselt number, pressure drop…. It is observed that the average Nusselt number and the mean cavity temperature values are all the higher as the Ri number is great. The pressure drop slightly decreases as Ri number increases. The fully chaotic flow regime is reached after three stages. The first stage is similar to the Ruelle-Takens-Newhouse scenario. At the end of this stage, apparition of periodicity interrupted the development of a full chaos initiating the second stage of the route to chaos where another series of three supercritical Hopf type bifurcations and a period doubling bifurcation take place. The third stage starts by the emergence of intermittencies which interrupts the apparition of a full chaotic flow. A complete chaos is achieved at the end of this third stage.
本文对非定常Al2O3水纳米流体在微分方形通风腔中的混合对流进行了数值研究。研究了恒定雷诺数Re=50和理查德森数Ri=40 ~ Ri=150时,从稳态到混沌混合对流状态的路径。控制方程采用隐式有限体积格式和TDMA算法求解。结果通过流线、等温线、平均温度、平均努塞尔数、压降....给出观察到,随着Ri数的增大,平均努塞尔数和平均腔温值均增大。随着Ri数的增加,压降略有减小。经过三个阶段达到完全混沌流态。第一阶段类似于Ruelle-Takens-Newhouse方案。在这一阶段结束时,周期性的出现中断了完全混沌的发展,开始了混沌路径的第二阶段,在这一阶段发生了另外一系列的三个超临界Hopf型分岔和一个周期加倍分岔。第三阶段开始于间歇性的出现,它打断了一个完整的混沌流的出现。在第三阶段结束时,会出现完全的混乱。
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引用次数: 0
Analysis of superconducting silicon epilayers by atom probe tomography: Composition and Evaporation field 超导硅薄膜的原子探针层析:成分和蒸发场
Pub Date : 2023-04-27 DOI: 10.1051/epjap/2023230018
K. Hoummada, F. Dahlem, F. Panciera, É. Bustarret, C. Marcenat, D. Débarre, Y. Amraoui, D. Mangelinck, L. Tetard, H. Oughaddou, A. Kara, Y. Dappe, N. Rochdi
Three dimensional distributions of boron atoms incorporated into crystalline silicon (3-9 B % at.) well above the solubility limit are measured by atom probe tomography (APT). Samples have been prepared either by gas immersion laser doping (GILD) or by implantation followed by laser annealing (Pulsed Laser Induced Epitaxy: PLIE). GILD and PLIE silicon samples show superconducting properties at low temperature thanks to the achieved high doping level. In both cases, boron atoms are found to be randomly distributed within the silicon as revealed by statistical distribution analysis. No cluster or precipitate are detected, which can be related to the high speed of recrystallization of the Si:B alloy. A sharp 2D interface between the doped silicon region and the undoped substrate is also observed, characterizing a Si:B/Si epitaxy. Finally, the variation of the evaporation field is investigated in both materials by considering either the silicon charge states ratio or the variation of the total voltage applied during the analysis of the Si:B layer.
通过原子探针断层扫描(APT)测量了远高于溶解度极限的硼原子并入晶体硅(3- 9b % at.)的三维分布。制备样品的方法有两种,一种是气体浸没激光掺杂(GILD),另一种是注入后激光退火(脉冲激光诱导外延:PLIE)。由于达到了高掺杂水平,GILD和PLIE硅样品在低温下表现出超导性能。在这两种情况下,硼原子被发现是随机分布在硅的统计分布分析。没有检测到团簇和沉淀,这可能与Si:B合金的再结晶速度快有关。在掺杂硅区和未掺杂衬底之间还观察到一个尖锐的二维界面,表征了Si:B/Si外延。最后,通过考虑硅电荷态比和硅:B层分析过程中施加的总电压的变化,研究了两种材料中蒸发场的变化。
{"title":"Analysis of superconducting silicon epilayers by atom probe tomography: Composition and Evaporation field","authors":"K. Hoummada, F. Dahlem, F. Panciera, É. Bustarret, C. Marcenat, D. Débarre, Y. Amraoui, D. Mangelinck, L. Tetard, H. Oughaddou, A. Kara, Y. Dappe, N. Rochdi","doi":"10.1051/epjap/2023230018","DOIUrl":"https://doi.org/10.1051/epjap/2023230018","url":null,"abstract":"Three dimensional distributions of boron atoms incorporated into crystalline silicon (3-9 B % at.) well above the solubility limit are measured by atom probe tomography (APT). Samples have been prepared either by gas immersion laser doping (GILD) or by implantation followed by laser annealing (Pulsed Laser Induced Epitaxy: PLIE). GILD and PLIE silicon samples show superconducting properties at low temperature thanks to the achieved high doping level. In both cases, boron atoms are found to be randomly distributed within the silicon as revealed by statistical distribution analysis. No cluster or precipitate are detected, which can be related to the high speed of recrystallization of the Si:B alloy. A sharp 2D interface between the doped silicon region and the undoped substrate is also observed, characterizing a Si:B/Si epitaxy. Finally, the variation of the evaporation field is investigated in both materials by considering either the silicon charge states ratio or the variation of the total voltage applied during the analysis of the Si:B layer.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127582155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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The European Physical Journal Applied Physics
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