Pub Date : 2023-03-27DOI: 10.25073/2588-1124/vnumap.4773
Vu Minh Anh
By the analytical approach, the equation of natural frequency of nanocomposite multilayer organic solar cell (NMOSC) is analyzed in this work. The NMOSC is composed of 6 layers: Al, LiF, P3HT: PCBM, PEDOT: PSS, ITO and Glass. By using the classical plate theory, the Hooke’s Law, the geometrical compatibility equation and the nonlinear equilibrium equations are proposed. These equations combined with the Galerkin method in order to investigate the effect of elastic foundations, geometrical parameters and initial imperfection on the natural frequency. Besides, in order to determine the maximum natural frequency of NMOSC, basic differential evolution optimization algorithm (DE) was used with five variables: elastic foundations include Winkeler foudation and Pasternak foudation, temperature, width and length. In the numerical results, the influence of length to width ratio, imperfection, elastic foundations and temperature increment were evaluated in detail. The optimal results from DE algorithm are shown and compared.
{"title":"Determination of the Optimum Values of the Natural Frequency of the Nanocomposite Multilayer Organic Solar Cell by using Basic Differential Evolution Optimization Algorithms","authors":"Vu Minh Anh","doi":"10.25073/2588-1124/vnumap.4773","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4773","url":null,"abstract":"By the analytical approach, the equation of natural frequency of nanocomposite multilayer organic solar cell (NMOSC) is analyzed in this work. The NMOSC is composed of 6 layers: Al, LiF, P3HT: PCBM, PEDOT: PSS, ITO and Glass. By using the classical plate theory, the Hooke’s Law, the geometrical compatibility equation and the nonlinear equilibrium equations are proposed. These equations combined with the Galerkin method in order to investigate the effect of elastic foundations, geometrical parameters and initial imperfection on the natural frequency. Besides, in order to determine the maximum natural frequency of NMOSC, basic differential evolution optimization algorithm (DE) was used with five variables: elastic foundations include Winkeler foudation and Pasternak foudation, temperature, width and length. In the numerical results, the influence of length to width ratio, imperfection, elastic foundations and temperature increment were evaluated in detail. The optimal results from DE algorithm are shown and compared. \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123562766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-27DOI: 10.25073/2588-1124/vnumap.4771
N. D. Cuong, Vu Thi Thao, Nguyen Tuan Canh, Nguyen Phuong Hoai Nam, Nguyen Nang Dinh
In this work, electrical simulations of planar CH3NH3PbI3 solar cells using a SCAPS-1D (a Solar Cell Capacitance Simulator) simulation tool were performed to determine the density of defects based on the performance parameters and J-V characteristics of actual experimental planar CH3NH3PbI3 solar cells. Two types of defects (bulk and interface) were introduced into the simulation model. The densities of those defects were found by fitting the J-V characteristics and performance parameters including , , and FF to the experimental data. The methods and results reported in this paper showed a close relationship between the parameters of defects in planar perovskite solar cells.
{"title":"Determination of Defects in Planar CH3NH3PbI3 Perovskite Solar Cells Using a SCAPS-1D Simulation Tool","authors":"N. D. Cuong, Vu Thi Thao, Nguyen Tuan Canh, Nguyen Phuong Hoai Nam, Nguyen Nang Dinh","doi":"10.25073/2588-1124/vnumap.4771","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4771","url":null,"abstract":"In this work, electrical simulations of planar CH3NH3PbI3 solar cells using a SCAPS-1D (a Solar Cell Capacitance Simulator) simulation tool were performed to determine the density of defects based on the performance parameters and J-V characteristics of actual experimental planar CH3NH3PbI3 solar cells. Two types of defects (bulk and interface) were introduced into the simulation model. The densities of those defects were found by fitting the J-V characteristics and performance parameters including , , and FF to the experimental data. The methods and results reported in this paper showed a close relationship between the parameters of defects in planar perovskite solar cells. \u0000 \u0000 \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121635297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-27DOI: 10.25073/2588-1124/vnumap.4770
N. H. Tiep, B. D. Tu, L. Cuong
In this work, we carried out survey on magnetic field strength and gradient in space around arrays of micro-sized parallelepipedic magnets by simulation and calculation. Magnetic field distributions are a function of magnet’s size and position with respect to magnet’s surface. Our purpose is to explain how magnetic interactions evolve while dimensions of magnetic sources are reduced. Firstly, the simulations and calculations were executed for a magnet with a large surface size of 1,000×1,000 µm2, a thickness of 5 µm, and a residual magnetism of 1.6T perpendicular to its surface. Then, the similar works were also performed for arrays of magnets with smaller surface sizes, e.g. 1,000×500 µm2; 1,000×200 µm2; 1,000×100 µm2; 1,000×50 µm2 and 1,000×10 µm2. Consequently, both the magnetic field strength and gradient in the space which is above and near the surface of the magnets, particularly, the space from the surface of the magnets to the height of 100 µm far from the surface of the magnets, were enhanced when the magnets’ size were appropriately reduced. This suggests that the application field of the magnets will be expanded and their integration into microsystems will be grown as the size of the magnets is reduced.
{"title":"Enhancement of Magnetic Field Strength and Gradient Produced by an Array of Micro-sized Parallelepiped Magnets","authors":"N. H. Tiep, B. D. Tu, L. Cuong","doi":"10.25073/2588-1124/vnumap.4770","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4770","url":null,"abstract":"In this work, we carried out survey on magnetic field strength and gradient in space around arrays of micro-sized parallelepipedic magnets by simulation and calculation. Magnetic field distributions are a function of magnet’s size and position with respect to magnet’s surface. Our purpose is to explain how magnetic interactions evolve while dimensions of magnetic sources are reduced. Firstly, the simulations and calculations were executed for a magnet with a large surface size of 1,000×1,000 µm2, a thickness of 5 µm, and a residual magnetism of 1.6T perpendicular to its surface. Then, the similar works were also performed for arrays of magnets with smaller surface sizes, e.g. 1,000×500 µm2; 1,000×200 µm2; 1,000×100 µm2; 1,000×50 µm2 and 1,000×10 µm2. Consequently, both the magnetic field strength and gradient in the space which is above and near the surface of the magnets, particularly, the space from the surface of the magnets to the height of 100 µm far from the surface of the magnets, were enhanced when the magnets’ size were appropriately reduced. This suggests that the application field of the magnets will be expanded and their integration into microsystems will be grown as the size of the magnets is reduced. \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121336881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-27DOI: 10.25073/2588-1124/vnumap.4767
Nguyen Hoang Anh, N. H. Son, Nguyen Van Hong
This work is designed to focus on the glassy network analysis and visualizing the cluster and subnets formation, the rich set of bond-, edge- and face-sharing linkages. The correlation between the degree of polymerization and linkages forming is apparently indicated. The distribution of SiOx clusters is computed to determine the polymerization characteristic and Mg-rich region. The distribution of BOs, NBOs and FOs also are investigated to prove the behavior of Mg2+ incorporating into the -Si-O- network. Polyhedral units, clusters, and subnets are vividly visualized so as to have a better understanding of cluster merging. Besides, in this work we have also clarified the distribution of edge-sharing and face-sharing subnets/network between Si-Si and Mg-Si species.
这项工作的目的是集中在玻璃网络分析和可视化集群和子网的形成，丰富的键，边和面共享连接集。结果表明，聚合度与键的形成有明显的相关性。计算了SiOx簇的分布，确定了聚合特性和富镁区。还研究了bo、nbo和fo的分布，以证明Mg2+融入- si - o -网络的行为。多面体单元、聚类和子网生动地可视化，以便更好地理解聚类合并。此外，我们还明确了Si-Si和Mg-Si物种之间的边共享和面共享子网/网络的分布。
{"title":"Pressure-induced Glassy Networks of Enstatite (MgSiO3) and Forsterite (Mg2SiO4)","authors":"Nguyen Hoang Anh, N. H. Son, Nguyen Van Hong","doi":"10.25073/2588-1124/vnumap.4767","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4767","url":null,"abstract":"This work is designed to focus on the glassy network analysis and visualizing the cluster and subnets formation, the rich set of bond-, edge- and face-sharing linkages. The correlation between the degree of polymerization and linkages forming is apparently indicated. The distribution of SiOx clusters is computed to determine the polymerization characteristic and Mg-rich region. The distribution of BOs, NBOs and FOs also are investigated to prove the behavior of Mg2+ incorporating into the -Si-O- network. Polyhedral units, clusters, and subnets are vividly visualized so as to have a better understanding of cluster merging. Besides, in this work we have also clarified the distribution of edge-sharing and face-sharing subnets/network between Si-Si and Mg-Si species. \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114793259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-27DOI: 10.25073/2588-1124/vnumap.4785
Nguyen Xuan Hao, Nguyen Hoang Nhat Minh, Ngo Duc Anh, Nguyen Le Ngoc Thu, Huynh Ha Ngoc Duy, Nguyen Bui Gia Man, Doan Nhat Giang, Luong Hoai Nhan, Dang Vinh Quang
Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), a type of conducting polymer has caught lots of attraction from scientists for its excellent properties as low-cost, non-toxic, etc. This also is a potential material for various applications as transparent electrodes, flexible and stretchable devices, thus improving the electrical properties of this polymer plays an important role. Among various methods such as post-treatment, doping with glycerol, and d-sorbitol herein, DMSO was chosen as an additive to enhance the conductivity of PEDOT:PSS. The results, including the increase in the films conductance according to the rise of DMSO dopant ratio from 0 to 2, good transmittance and surface morphology were clearly presented. This will be the platform for the further study of the utilization of PEDOT:PSS in various potential optoelectronic devices in the future.
{"title":"Enhancing Poly(3,4-ethylenedioxythiophene) Polystyrene Sulfonate (PEDOT:PSS) Conductivity by Dimethyl Sulfoxide (DMSO) Dopant","authors":"Nguyen Xuan Hao, Nguyen Hoang Nhat Minh, Ngo Duc Anh, Nguyen Le Ngoc Thu, Huynh Ha Ngoc Duy, Nguyen Bui Gia Man, Doan Nhat Giang, Luong Hoai Nhan, Dang Vinh Quang","doi":"10.25073/2588-1124/vnumap.4785","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4785","url":null,"abstract":"Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), a type of conducting polymer has caught lots of attraction from scientists for its excellent properties as low-cost, non-toxic, etc. This also is a potential material for various applications as transparent electrodes, flexible and stretchable devices, thus improving the electrical properties of this polymer plays an important role. Among various methods such as post-treatment, doping with glycerol, and d-sorbitol herein, DMSO was chosen as an additive to enhance the conductivity of PEDOT:PSS. The results, including the increase in the films conductance according to the rise of DMSO dopant ratio from 0 to 2, good transmittance and surface morphology were clearly presented. This will be the platform for the further study of the utilization of PEDOT:PSS in various potential optoelectronic devices in the future. \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"79 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131701811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-26DOI: 10.25073/2588-1124/vnumap.4737
D. Van Tuan, Dang Thi Thuy Ngan, Nguyễn Thi Thuy, Hoang Lan, Nguyen Thi Nguyet, Vu Thi Phuong Thuy, Nguyen Dac Dien, V. V. Thu, P. H. Vuong, P. D. Tam
: In this work, molybdenum disulfide (MoS2) nanorods (NRs) were prepared by a simple hydrothermal method. A sensitive electrochemical glucose biosensor was developed based on the immobilization of glucose oxidase (GOx) on MoS2 NRs modified glassy carbon electrode (GCE). The SnO2 NRs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS). SnO2 NRs have large specific area and can load large amounts of GOx molecules. The cyclic voltammetry (CV) of GOx/MoS2 NR/GCE exhibited a linear relationship between the peak current density of CV with glucose concentration in the range of 3.0 mM to 7.0 mM with the limit of detection (LOD) of 3.0 mM and high sensitivity of mA.mM. The parameters affecting the oxidation current density such as pH, temperature, GOx concentration were also investigated. This study demonstrates the feasibility of realizing inexpensive, reliable, and highly effective performance glucose biosensors using MoS2 nanorods.
本文采用简单的水热法制备了二硫化钼纳米棒。基于葡萄糖氧化酶(GOx)在二硫化钼核磁共振修饰的玻碳电极(GCE)上的固定化，研制了一种灵敏的电化学葡萄糖生物传感器。采用x射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和x射线能谱(EDS)对SnO2 nmr进行了表征。SnO2 NRs具有较大的比面积，可以装载大量的GOx分子。GOx/MoS2 NR/GCE的循环伏安法(CV)显示，CV的峰值电流密度与葡萄糖浓度在3.0 ~ 7.0 mM范围内呈线性关系，检出限(LOD)为3.0 mM, mA.mM具有较高的灵敏度。考察了pH、温度、氧化石墨烯浓度等参数对氧化电流密度的影响。本研究证明了利用二硫化钼纳米棒实现廉价、可靠、高效的葡萄糖生物传感器的可行性。
{"title":"Characterization of Enzymatic Glucose Biosensors Based on A Glassy Carbon Electrode Modified with MoS2 Nanorods","authors":"D. Van Tuan, Dang Thi Thuy Ngan, Nguyễn Thi Thuy, Hoang Lan, Nguyen Thi Nguyet, Vu Thi Phuong Thuy, Nguyen Dac Dien, V. V. Thu, P. H. Vuong, P. D. Tam","doi":"10.25073/2588-1124/vnumap.4737","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4737","url":null,"abstract":": In this work, molybdenum disulfide (MoS2) nanorods (NRs) were prepared by a simple hydrothermal method. A sensitive electrochemical glucose biosensor was developed based on the immobilization of glucose oxidase (GOx) on MoS2 NRs modified glassy carbon electrode (GCE). The SnO2 NRs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS). SnO2 NRs have large specific area and can load large amounts of GOx molecules. The cyclic voltammetry (CV) of GOx/MoS2 NR/GCE exhibited a linear relationship between the peak current density of CV with glucose concentration in the range of 3.0 mM to 7.0 mM with the limit of detection (LOD) of 3.0 mM and high sensitivity of mA.mM. The parameters affecting the oxidation current density such as pH, temperature, GOx concentration were also investigated. This study demonstrates the feasibility of realizing inexpensive, reliable, and highly effective performance glucose biosensors using MoS2 nanorods. \u0000 \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122037656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-26DOI: 10.25073/2588-1124/vnumap.4755
Le Mai Dung, Dao Thi Le Thuy
The process is studied from unparticle physics perspective in Randall-Sundrum model. We calculated and evaluated the cross sections independently for photon (γ), Z boson (Z), vector unparticle (Uμ), Higgs (h), radion ( ), scalar unparticle (U) exchange. Numerical calculations showed that the contribution of unparticle exchange dominates in a very high energy region. While γ and Z contribute mainly in the lower region, h and contribution is negligible in comparison with the other exchanges. The results are plotted in the energy ranges available in the present designs of accelerators and near future high energy frontier muon colliders as shown by International Muon Collider Collaboration articles. Keywords: Muon production, unparticle physics, collisions, muon colliders, Randall-Sundrum model.
{"title":"The Contribution of Photon, Z Boson, Higgs, Radion and Unparticle to the Process in Randall-Sundrum model","authors":"Le Mai Dung, Dao Thi Le Thuy","doi":"10.25073/2588-1124/vnumap.4755","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4755","url":null,"abstract":" The process is studied from unparticle physics perspective in Randall-Sundrum model. We calculated and evaluated the cross sections independently for photon (γ), Z boson (Z), vector unparticle (Uμ), Higgs (h), radion ( ), scalar unparticle (U) exchange. Numerical calculations showed that the contribution of unparticle exchange dominates in a very high energy region. While γ and Z contribute mainly in the lower region, h and contribution is negligible in comparison with the other exchanges. The results are plotted in the energy ranges available in the present designs of accelerators and near future high energy frontier muon colliders as shown by International Muon Collider Collaboration articles. \u0000Keywords: Muon production, unparticle physics, collisions, muon colliders, Randall-Sundrum model.","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123304093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-26DOI: 10.25073/2588-1124/vnumap.4783
Nguyen Thi Nguyet Anh, L. Tung, N. Q. Bau, Tang Thi Dien
We applied the quantum kinetic equation method to investigate the influence of confined optical phonons (confined OP) on the photo-stimulated Ettingshausen effect in rectangular quantum wires (RQW) subjected to a perpendicular magnetic field. We considered the case where the confined electrons-confined OP scattering is the dominant mechanism. Analytical expressions for the kinetic tensors, the EC are obtained. The EC is a function of external fields, the temperature of the system, especially the quantum numbers m1 and m2 characterizing confined OP. When the width of the wire increases to infinity, the results of the bulk semiconductors can be gained. The numerical results are numerically evaluated and discussed for the GaAs/AlGaAs RQW. The magnitude of the resonance peaks has been increased for each value of m1, m2, found when examining the dependence of the EC on the photon energy. Furthermore, the EC is decreased considerably when the amplitude of EMW increases, which is obtained when investigating the dependence of the EC on the amplitude of EMW (laser). These results are important for further researches and could be helped to complete the theory of the thermo - magnetoelectric effects in the low dimensional system.
{"title":"Effect of Confined Optical Phonons on Photo-Stimulated Ettingshausen Effect in Rectangular Quantum Wires with A Perpendicular Magnetic Field","authors":"Nguyen Thi Nguyet Anh, L. Tung, N. Q. Bau, Tang Thi Dien","doi":"10.25073/2588-1124/vnumap.4783","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4783","url":null,"abstract":"We applied the quantum kinetic equation method to investigate the influence of confined optical phonons (confined OP) on the photo-stimulated Ettingshausen effect in rectangular quantum wires (RQW) subjected to a perpendicular magnetic field. We considered the case where the confined electrons-confined OP scattering is the dominant mechanism. Analytical expressions for the kinetic tensors, the EC are obtained. The EC is a function of external fields, the temperature of the system, especially the quantum numbers m1 and m2 characterizing confined OP. When the width of the wire increases to infinity, the results of the bulk semiconductors can be gained. The numerical results are numerically evaluated and discussed for the GaAs/AlGaAs RQW. The magnitude of the resonance peaks has been increased for each value of m1, m2, found when examining the dependence of the EC on the photon energy. Furthermore, the EC is decreased considerably when the amplitude of EMW increases, which is obtained when investigating the dependence of the EC on the amplitude of EMW (laser). These results are important for further researches and could be helped to complete the theory of the thermo - magnetoelectric effects in the low dimensional system. \u0000 \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117339528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-17DOI: 10.25073/2588-1124/vnumap.4728
Dang Van Trong, Le Tran Bao Tran, Chu Van Lanh, Nguyen Thi Hong Phuong, Nguyen Minh Hang Trang, Hoang Trong Duc, Nguyễn Thi Thuy
: In this workwe proposed a newly designed photonic crystal fiber (PCF) with a circular lattice, the difference between the air-hole diameters of the first ring and the other rings makes it possible to improve the nonlinear properties of fibers. We investigated the effect of varying the filling factor (d1/Ʌ) and lattice constant (Ʌ) on the nonlinear characteristics of photonic crystal fibers in the 0.5 - 2 µm wavelength range. The advantages of these photonic crystal fibers are the flat and near-zero dispersion, low attenuation, and high nonlinear coefficient. From simulation results, we have selected three optimal structures (Ʌ = 1.0 μm; d1/Ʌ = 0.4, Ʌ = 0.8 μm; d1/Ʌ = 0.6, and Ʌ = 0.8 μm; d1/Ʌ = 0.65) to analyze the nonlinear characteristics at the pump wavelengths. The proposed fibers are valuable for supercontinuum generation. Keywords:
{"title":"Study on Optical Features of Circular Photonic Crystal Fibers with Various Air-hole Size","authors":"Dang Van Trong, Le Tran Bao Tran, Chu Van Lanh, Nguyen Thi Hong Phuong, Nguyen Minh Hang Trang, Hoang Trong Duc, Nguyễn Thi Thuy","doi":"10.25073/2588-1124/vnumap.4728","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4728","url":null,"abstract":": In this workwe proposed a newly designed photonic crystal fiber (PCF) with a circular lattice, the difference between the air-hole diameters of the first ring and the other rings makes it possible to improve the nonlinear properties of fibers. We investigated the effect of varying the filling factor (d1/Ʌ) and lattice constant (Ʌ) on the nonlinear characteristics of photonic crystal fibers in the 0.5 - 2 µm wavelength range. The advantages of these photonic crystal fibers are the flat and near-zero dispersion, low attenuation, and high nonlinear coefficient. From simulation results, we have selected three optimal structures (Ʌ = 1.0 μm; d1/Ʌ = 0.4, Ʌ = 0.8 μm; d1/Ʌ = 0.6, and Ʌ = 0.8 μm; d1/Ʌ = 0.65) to analyze the nonlinear characteristics at the pump wavelengths. The proposed fibers are valuable for supercontinuum generation. \u0000Keywords: ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125036988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-performance low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have been developed for larger applications than flat panel displays (FPDs) such as three-dimensional integrated circuits (3D-ICs) and glass sheet computers. The crystallinity of poly-Si thin films has been the key factor determining TFTs’ performance. In this work, a void-defect location has been controlled by patterning amorphous silicon (a-Si) thin films with rectangular and square holes before crystallized by multiline continuous-wave laser beam to avoid the effect of void-defects on the TFTs’ performance. Instead of randomly appearing in the poly-Si thin films, void-defects were only observed at the backsides of the patterned holes. Interestingly, large crystal grains without void-defects were laterally crystallized at Si strips between holes. By observing the crystallinities of poly-Si thin film around the patterned holes, both the mechanism of the void formation and crystal growth based on temperature gradient was clarified.
{"title":"Void-Defect Location Control of Laser-Crystallized Silicon Thin Films with Hole-Pattern","authors":"Nguyễn Thi Thuy, Nguyen Dinh Lam, Kuroki Shin'ichiro","doi":"10.25073/2588-1124/vnumap.4742","DOIUrl":"https://doi.org/10.25073/2588-1124/vnumap.4742","url":null,"abstract":"High-performance low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have been developed for larger applications than flat panel displays (FPDs) such as three-dimensional integrated circuits (3D-ICs) and glass sheet computers. The crystallinity of poly-Si thin films has been the key factor determining TFTs’ performance. In this work, a void-defect location has been controlled by patterning amorphous silicon (a-Si) thin films with rectangular and square holes before crystallized by multiline continuous-wave laser beam to avoid the effect of void-defects on the TFTs’ performance. Instead of randomly appearing in the poly-Si thin films, void-defects were only observed at the backsides of the patterned holes. Interestingly, large crystal grains without void-defects were laterally crystallized at Si strips between holes. By observing the crystallinities of poly-Si thin film around the patterned holes, both the mechanism of the void formation and crystal growth based on temperature gradient was clarified. \u0000 ","PeriodicalId":303178,"journal":{"name":"VNU Journal of Science: Mathematics - Physics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128314792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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