Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998632
Gerhard Wachutka
Miniaturized thermoelectric power generators, which are able to convert waste heat into a few microwatts or milliwatts of electrical energy, seem to be particularly attractive for the autonomous power supply of microelectronic circuitry without the use of batteries. However, the conversion efficiencies achieved so far are very small. A critical analysis shows that there is still a certain potential for improvements toward the theoretical limits, but that some expectations seem questionable in view of the physical and technological limitations.
{"title":"Energy harvesting using thermoelectric microgenerators: A critical analysis","authors":"Gerhard Wachutka","doi":"10.1109/ASDAM.2014.6998632","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998632","url":null,"abstract":"Miniaturized thermoelectric power generators, which are able to convert waste heat into a few microwatts or milliwatts of electrical energy, seem to be particularly attractive for the autonomous power supply of microelectronic circuitry without the use of batteries. However, the conversion efficiencies achieved so far are very small. A critical analysis shows that there is still a certain potential for improvements toward the theoretical limits, but that some expectations seem questionable in view of the physical and technological limitations.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122482836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998683
J. Osvald, G. Vanko, K. Frohlich
We explored theoretically and experimentally frequency dependence of capacitance of insulator/GaN/AlGaN/GaN heterostructure MISH (metal insulator semiconductor heterostructure) capacitor and influence of interface traps density present at insulator/GaN/AlGaN interface on capacitance curves. We obtain correspondence between experimental results and theoretical predictions. Depending on the interface traps density the second capacitance step appeared in both theoretical and experimental results. Its position and slope of capacitance increase depend also on interface traps density. Increasing the interface traps density starting from certain density the second capacitance step does not appear and the capacitance curve looks like the capacitance curve of the structure with Schottky diode. For low frequency case, capacitance plateau is higher than for higher frequencies. We may assume that some part of shallower traps is able to respond to the measuring signal and contribute to the total structure capacitance.
{"title":"Frequency dependent capacitance of insulator GaN/AlGaN/GaN heterostructure","authors":"J. Osvald, G. Vanko, K. Frohlich","doi":"10.1109/ASDAM.2014.6998683","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998683","url":null,"abstract":"We explored theoretically and experimentally frequency dependence of capacitance of insulator/GaN/AlGaN/GaN heterostructure MISH (metal insulator semiconductor heterostructure) capacitor and influence of interface traps density present at insulator/GaN/AlGaN interface on capacitance curves. We obtain correspondence between experimental results and theoretical predictions. Depending on the interface traps density the second capacitance step appeared in both theoretical and experimental results. Its position and slope of capacitance increase depend also on interface traps density. Increasing the interface traps density starting from certain density the second capacitance step does not appear and the capacitance curve looks like the capacitance curve of the structure with Schottky diode. For low frequency case, capacitance plateau is higher than for higher frequencies. We may assume that some part of shallower traps is able to respond to the measuring signal and contribute to the total structure capacitance.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127997731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ASDAM.2014.6998695
O. Kryvchenkova, K. Kalna, R. Cobley
A full 3D model for the simulation of carrier transport, self-consistently coupled with thermal transport, has been developed for free-standing ZnO nanowires with Schottky contacts. The model predicts a complex distribution of the current density through the metal-semiconductor interface with a high current density area around the edge of the Schottky contact away from the contact centre. This high current density would result in increased Joule heating at the contact edge of the free standing ZnO nanowire leading to local temperature breakdown at the contact. Degradation with increasing temperature was also demonstrated.
{"title":"Modelling heating effects due to current crowding in ZnO nanowires with end-bonded metal contacts","authors":"O. Kryvchenkova, K. Kalna, R. Cobley","doi":"10.1109/ASDAM.2014.6998695","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998695","url":null,"abstract":"A full 3D model for the simulation of carrier transport, self-consistently coupled with thermal transport, has been developed for free-standing ZnO nanowires with Schottky contacts. The model predicts a complex distribution of the current density through the metal-semiconductor interface with a high current density area around the edge of the Schottky contact away from the contact centre. This high current density would result in increased Joule heating at the contact edge of the free standing ZnO nanowire leading to local temperature breakdown at the contact. Degradation with increasing temperature was also demonstrated.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126939945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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