Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998687
J. Formánek, J. Jakovenko
The paper presents development of simulation method and measuring system for a lifetime characterization of concentric circuit boards. It brings a knowledge about modern approaches of structure lifetime estimation by using a FEM (finite element method) modelling. Methods known in the field of mechanical engineering and material engineering are extended by the author with the new knowledge and applied for development of new lifetime evaluation method. The testing is done by using the specific mechanical bending test apparatus which is designed to achieve equivalent results as can be achieved by the cyclic tests in the thermal chamber. The structure damage is generated by using a mechanical force generated by the pneumatic piston. Tested concentric circuit boards are mainly used in LED lamps. The boards are characterized by a circular shape, concentrically mounted components and high operating temperatures.
{"title":"Methods for lifetime characterization of concentric circuit boards","authors":"J. Formánek, J. Jakovenko","doi":"10.1109/ASDAM.2014.6998687","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998687","url":null,"abstract":"The paper presents development of simulation method and measuring system for a lifetime characterization of concentric circuit boards. It brings a knowledge about modern approaches of structure lifetime estimation by using a FEM (finite element method) modelling. Methods known in the field of mechanical engineering and material engineering are extended by the author with the new knowledge and applied for development of new lifetime evaluation method. The testing is done by using the specific mechanical bending test apparatus which is designed to achieve equivalent results as can be achieved by the cyclic tests in the thermal chamber. The structure damage is generated by using a mechanical force generated by the pneumatic piston. Tested concentric circuit boards are mainly used in LED lamps. The boards are characterized by a circular shape, concentrically mounted components and high operating temperatures.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131105238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998683
J. Osvald, G. Vanko, K. Frohlich
We explored theoretically and experimentally frequency dependence of capacitance of insulator/GaN/AlGaN/GaN heterostructure MISH (metal insulator semiconductor heterostructure) capacitor and influence of interface traps density present at insulator/GaN/AlGaN interface on capacitance curves. We obtain correspondence between experimental results and theoretical predictions. Depending on the interface traps density the second capacitance step appeared in both theoretical and experimental results. Its position and slope of capacitance increase depend also on interface traps density. Increasing the interface traps density starting from certain density the second capacitance step does not appear and the capacitance curve looks like the capacitance curve of the structure with Schottky diode. For low frequency case, capacitance plateau is higher than for higher frequencies. We may assume that some part of shallower traps is able to respond to the measuring signal and contribute to the total structure capacitance.
{"title":"Frequency dependent capacitance of insulator GaN/AlGaN/GaN heterostructure","authors":"J. Osvald, G. Vanko, K. Frohlich","doi":"10.1109/ASDAM.2014.6998683","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998683","url":null,"abstract":"We explored theoretically and experimentally frequency dependence of capacitance of insulator/GaN/AlGaN/GaN heterostructure MISH (metal insulator semiconductor heterostructure) capacitor and influence of interface traps density present at insulator/GaN/AlGaN interface on capacitance curves. We obtain correspondence between experimental results and theoretical predictions. Depending on the interface traps density the second capacitance step appeared in both theoretical and experimental results. Its position and slope of capacitance increase depend also on interface traps density. Increasing the interface traps density starting from certain density the second capacitance step does not appear and the capacitance curve looks like the capacitance curve of the structure with Schottky diode. For low frequency case, capacitance plateau is higher than for higher frequencies. We may assume that some part of shallower traps is able to respond to the measuring signal and contribute to the total structure capacitance.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127997731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ASDAM.2014.6998695
O. Kryvchenkova, K. Kalna, R. Cobley
A full 3D model for the simulation of carrier transport, self-consistently coupled with thermal transport, has been developed for free-standing ZnO nanowires with Schottky contacts. The model predicts a complex distribution of the current density through the metal-semiconductor interface with a high current density area around the edge of the Schottky contact away from the contact centre. This high current density would result in increased Joule heating at the contact edge of the free standing ZnO nanowire leading to local temperature breakdown at the contact. Degradation with increasing temperature was also demonstrated.
{"title":"Modelling heating effects due to current crowding in ZnO nanowires with end-bonded metal contacts","authors":"O. Kryvchenkova, K. Kalna, R. Cobley","doi":"10.1109/ASDAM.2014.6998695","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998695","url":null,"abstract":"A full 3D model for the simulation of carrier transport, self-consistently coupled with thermal transport, has been developed for free-standing ZnO nanowires with Schottky contacts. The model predicts a complex distribution of the current density through the metal-semiconductor interface with a high current density area around the edge of the Schottky contact away from the contact centre. This high current density would result in increased Joule heating at the contact edge of the free standing ZnO nanowire leading to local temperature breakdown at the contact. Degradation with increasing temperature was also demonstrated.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126939945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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