Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998675
L. Stuchlíková, A. Kosa, J. Benkovska, P. Benko, L. Harmatha, J. Kováč
In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The correlation between deep levels observed on different structure types is discussed.
{"title":"Defects in schottky diodes based on AlGaN/GaN heterostructures","authors":"L. Stuchlíková, A. Kosa, J. Benkovska, P. Benko, L. Harmatha, J. Kováč","doi":"10.1109/ASDAM.2014.6998675","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998675","url":null,"abstract":"In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The correlation between deep levels observed on different structure types is discussed.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116337956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998684
V. Janicek
This paper describes the design and evaluation of 3D electrostatic energy harvester. It is based on electrostatic converter and uses the principle of conversion of non-electric energy into electrical energy by periodical modification of gap between electrodes of a capacitor. The structure is designed and modelled as three-dimensional silicon based MEMS. Innovative approach made it possible to reach very low resonant frequency of approx. 100 Hz. A modified long cantilever damping spring design has been used. The structure can move in all 3 axes of coordinate system and can be mechanically tuned to reach desired parameters.
{"title":"Energy harvesting in 3D","authors":"V. Janicek","doi":"10.1109/ASDAM.2014.6998684","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998684","url":null,"abstract":"This paper describes the design and evaluation of 3D electrostatic energy harvester. It is based on electrostatic converter and uses the principle of conversion of non-electric energy into electrical energy by periodical modification of gap between electrodes of a capacitor. The structure is designed and modelled as three-dimensional silicon based MEMS. Innovative approach made it possible to reach very low resonant frequency of approx. 100 Hz. A modified long cantilever damping spring design has been used. The structure can move in all 3 axes of coordinate system and can be mechanically tuned to reach desired parameters.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115920136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998653
A. Fox, M. Mikulics, H. Hardtdegen, S. Trellenkamp, Y. Arango, D. Grutzmacher, Zdenek Sofer, D. Gregušová, J. Novák, P. Kordos, M. Marso
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 μm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.
{"title":"Novel double-level-T-gate technology","authors":"A. Fox, M. Mikulics, H. Hardtdegen, S. Trellenkamp, Y. Arango, D. Grutzmacher, Zdenek Sofer, D. Gregušová, J. Novák, P. Kordos, M. Marso","doi":"10.1109/ASDAM.2014.6998653","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998653","url":null,"abstract":"We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 μm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121151797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998654
M. Micjan, J. Nevrela, M. Novota, S. Flickyngerová, P. Juhasz, J. Uhrik, J. Jakabovic, M. Weis
Here we demonstrate application of organic ferroelectric insulating material: copolymer vinylidene fluoride and trifluoroethylene P(VDF-TrFE) for organic memory devices. The metal-insulator-metal structures have been used to study the ferroelectric properties and represent the model applications for ferroelectric field-effect transistors (FeFETs) and ferroelectric random access memories (FRAM). The current-voltage and capacitance-voltage characteristics depicted ferroelectric switching phenomenon present in thin-film structures and polarization properties have been analysed. This work describes the MIM device fabrication technology as well as the evaluation of material properties: saturated polarization, maximum electric field intensity, critical electric field, and relative dielectric constant.
{"title":"Ferroelectric polymer films for flexible memory devices","authors":"M. Micjan, J. Nevrela, M. Novota, S. Flickyngerová, P. Juhasz, J. Uhrik, J. Jakabovic, M. Weis","doi":"10.1109/ASDAM.2014.6998654","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998654","url":null,"abstract":"Here we demonstrate application of organic ferroelectric insulating material: copolymer vinylidene fluoride and trifluoroethylene P(VDF-TrFE) for organic memory devices. The metal-insulator-metal structures have been used to study the ferroelectric properties and represent the model applications for ferroelectric field-effect transistors (FeFETs) and ferroelectric random access memories (FRAM). The current-voltage and capacitance-voltage characteristics depicted ferroelectric switching phenomenon present in thin-film structures and polarization properties have been analysed. This work describes the MIM device fabrication technology as well as the evaluation of material properties: saturated polarization, maximum electric field intensity, critical electric field, and relative dielectric constant.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124123636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998646
A. Šagátová, B. Zat’ko, K. Sedlačková, V. Nečas, M. Fulop
The spectrometric characteristics of semi-insulating GaAs detectors irradiated by 5 MeV electrons to a dose of 24 kGy at three different dose rates (20, 40 and 80kGy/h) were studied. A similar decrease of CCE (Charge Collection Efficiency) after irradiation by 7.5% of CCE was observed with all groups of investigated detectors. On the other hand, an increase of detection efficiency after irradiation was shown. The influence of the dose rate during irradiation on spectrometric properties of detectors was not proved in chosen range of dose rate.
{"title":"Electron irradiation effects on the spectrometric characteristics of GaAs detectors","authors":"A. Šagátová, B. Zat’ko, K. Sedlačková, V. Nečas, M. Fulop","doi":"10.1109/ASDAM.2014.6998646","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998646","url":null,"abstract":"The spectrometric characteristics of semi-insulating GaAs detectors irradiated by 5 MeV electrons to a dose of 24 kGy at three different dose rates (20, 40 and 80kGy/h) were studied. A similar decrease of CCE (Charge Collection Efficiency) after irradiation by 7.5% of CCE was observed with all groups of investigated detectors. On the other hand, an increase of detection efficiency after irradiation was shown. The influence of the dose rate during irradiation on spectrometric properties of detectors was not proved in chosen range of dose rate.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131427620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998671
W. M. Jubadi, M. A. Md Zawawi, M. Missous
This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.
{"title":"Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode","authors":"W. M. Jubadi, M. A. Md Zawawi, M. Missous","doi":"10.1109/ASDAM.2014.6998671","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998671","url":null,"abstract":"This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122832304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998661
M. Ťapajna, L. Válik, P. Kotara, R. Zhytnytska, F. Brunner, O. Hilt, Eldad Bahat Treidel, J. Wurfl, J. Kuzmík
Drain current trapping characteristics were systematically analyzed and compared on normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications, grown on AlGaN/GaN double and Fe-doped GaN single heterostructures with and without Ar implantation into n-SiC substrate. Spatial location of traps was studied using comparison between trapping behaviour of devices with and without field-plate electrode and correlation between early-stage degradation modes and trapping behaviour. Our results indicate that for HEMTs grown on DH buffer, trapping process with time constant in the seconds range may be mitigated by Ar implantation into SiC.
{"title":"Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications","authors":"M. Ťapajna, L. Válik, P. Kotara, R. Zhytnytska, F. Brunner, O. Hilt, Eldad Bahat Treidel, J. Wurfl, J. Kuzmík","doi":"10.1109/ASDAM.2014.6998661","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998661","url":null,"abstract":"Drain current trapping characteristics were systematically analyzed and compared on normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications, grown on AlGaN/GaN double and Fe-doped GaN single heterostructures with and without Ar implantation into n-SiC substrate. Spatial location of traps was studied using comparison between trapping behaviour of devices with and without field-plate electrode and correlation between early-stage degradation modes and trapping behaviour. Our results indicate that for HEMTs grown on DH buffer, trapping process with time constant in the seconds range may be mitigated by Ar implantation into SiC.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127068903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998698
R. Spetik, S. Kapsia, J. Pjencak
Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.
{"title":"Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications","authors":"R. Spetik, S. Kapsia, J. Pjencak","doi":"10.1109/ASDAM.2014.6998698","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998698","url":null,"abstract":"Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125302238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998672
P. Murat, Yarimbiyik A. Emre, Dundar Gunhan, Fernandez Francisco
Since statistical circuit analysis are vital for robust circuit designs, different techniques like Monte-Carlo or response surface models have been developed. These tools are adapted with passive and active devices with process variations in order to statistically analyse ICs. In this paper, a similar idea has been applied for statistical analysis at device level, instead of circuits, for some RF components. By using the physical variations of the fabrication environment, process and device simulations can be realized; thus the electrical variations of the devices can be obtained. This technique is expected to shorten time-to-market in different ways. To illustrate the idea, analysis of a 0.25um SiGe transistor and 1nH spiral inductor have been realized.
{"title":"Statistical analysis of active and passive RF devices","authors":"P. Murat, Yarimbiyik A. Emre, Dundar Gunhan, Fernandez Francisco","doi":"10.1109/ASDAM.2014.6998672","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998672","url":null,"abstract":"Since statistical circuit analysis are vital for robust circuit designs, different techniques like Monte-Carlo or response surface models have been developed. These tools are adapted with passive and active devices with process variations in order to statistically analyse ICs. In this paper, a similar idea has been applied for statistical analysis at device level, instead of circuits, for some RF components. By using the physical variations of the fabrication environment, process and device simulations can be realized; thus the electrical variations of the devices can be obtained. This technique is expected to shorten time-to-market in different ways. To illustrate the idea, analysis of a 0.25um SiGe transistor and 1nH spiral inductor have been realized.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128941439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/ASDAM.2014.6998704
D. Jandura, D. Pudiš, S. Slabeyciusová, J. Ďurišová
In this paper, the fabrication technology for planar waveguide structures and devices in polydimethylsiloxane (PDMS) is presented. Direct laser writing was used to prepare pattern master in photoresist layer. In the next step, channel waveguide and ring resonator structures were imprinted in PDMS material. Finally, morphological properties of prepared waveguide structures were investigated by atomic force microscopy.
{"title":"Planar waveguide based structures for integrated optics on PDMS","authors":"D. Jandura, D. Pudiš, S. Slabeyciusová, J. Ďurišová","doi":"10.1109/ASDAM.2014.6998704","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998704","url":null,"abstract":"In this paper, the fabrication technology for planar waveguide structures and devices in polydimethylsiloxane (PDMS) is presented. Direct laser writing was used to prepare pattern master in photoresist layer. In the next step, channel waveguide and ring resonator structures were imprinted in PDMS material. Finally, morphological properties of prepared waveguide structures were investigated by atomic force microscopy.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127106569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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