Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998678
J. Kroutil, A. Laposa, J. Nahlik, A. Bouřa, M. Husák
The aim of the paper is to present results of design gas sensor with different form of polyaniline active layer for toxic gases detection. Sensing of toxic gases is very important in many applications. Automotive, defence, aerospace, agriculture, chemical industry, medicine, environmental, food and drink are many important markets for chemical and biological sensors. The advantages of resistive sensors are easy fabrication, simple operation and low production cost. Using of polymer film causes that this sensor is not required heating of active layer. This leads to reduce power consumption. Active layer is operated at room temperature.
{"title":"Characterization of gas sensor with polyaniline film","authors":"J. Kroutil, A. Laposa, J. Nahlik, A. Bouřa, M. Husák","doi":"10.1109/ASDAM.2014.6998678","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998678","url":null,"abstract":"The aim of the paper is to present results of design gas sensor with different form of polyaniline active layer for toxic gases detection. Sensing of toxic gases is very important in many applications. Automotive, defence, aerospace, agriculture, chemical industry, medicine, environmental, food and drink are many important markets for chemical and biological sensors. The advantages of resistive sensors are easy fabrication, simple operation and low production cost. Using of polymer film causes that this sensor is not required heating of active layer. This leads to reduce power consumption. Active layer is operated at room temperature.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131179706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998680
M. Husák, A. Laposa, P. Kulha, P. Nepraš
The core of the article deals with the principles of analysis of pollutants in water by molecular absorption spectrometry. The spectrometer is used for analysis. Design and implementation of software for the evaluation of water analysis is part of the work. The software is designed with ease of use and retrieval of data. Analysis of water is mainly focused on nitrates. The detection is focused on determining levels of particular components, suitable algorithm recognizes the substance. The method with the exchange of energy between radiation and the material under investigation (the spectrometric method) is used in the work. The energy exchange is the absorption or emission of radiation.
{"title":"Quality water analyzer","authors":"M. Husák, A. Laposa, P. Kulha, P. Nepraš","doi":"10.1109/ASDAM.2014.6998680","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998680","url":null,"abstract":"The core of the article deals with the principles of analysis of pollutants in water by molecular absorption spectrometry. The spectrometer is used for analysis. Design and implementation of software for the evaluation of water analysis is part of the work. The software is designed with ease of use and retrieval of data. Analysis of water is mainly focused on nitrates. The detection is focused on determining levels of particular components, suitable algorithm recognizes the substance. The method with the exchange of energy between radiation and the material under investigation (the spectrometric method) is used in the work. The energy exchange is the absorption or emission of radiation.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125446128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998652
S. Trellenkamp, M. Mikulics, A. Winden, Y. Arango, J. Moers, M. Marso, D. Grutzmacher, H. Hardtdegen
We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.
{"title":"III-nitride nano-LEDs for single photon lithography","authors":"S. Trellenkamp, M. Mikulics, A. Winden, Y. Arango, J. Moers, M. Marso, D. Grutzmacher, H. Hardtdegen","doi":"10.1109/ASDAM.2014.6998652","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998652","url":null,"abstract":"We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115097118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998681
F. Puci, M. Husák
The paper describes magnetically levitated planar actuator with moving magnets. The translator part is represented by a disc permanent magnet or a uniform shaped object fulfilling specific requirements, so that it can provide sufficient control force against the lateral forces and the gravity force of the carrier. The stator platform is represented by 16 identical coils and a microcontroller board for precise coordination of the translator. The coil currents are controlled by PWM signals, in such a way, so together would form a homogenous magnetic field slightly above the planar surface of the coil array. As only the coils can produce significant force and torque, the current through them is switched during the movements of the translator. The system fulfils all the design requirements and its functionality was verified in the laboratory.
{"title":"Translator with magnetic levitation","authors":"F. Puci, M. Husák","doi":"10.1109/ASDAM.2014.6998681","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998681","url":null,"abstract":"The paper describes magnetically levitated planar actuator with moving magnets. The translator part is represented by a disc permanent magnet or a uniform shaped object fulfilling specific requirements, so that it can provide sufficient control force against the lateral forces and the gravity force of the carrier. The stator platform is represented by 16 identical coils and a microcontroller board for precise coordination of the translator. The coil currents are controlled by PWM signals, in such a way, so together would form a homogenous magnetic field slightly above the planar surface of the coil array. As only the coils can produce significant force and torque, the current through them is switched during the movements of the translator. The system fulfils all the design requirements and its functionality was verified in the laboratory.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129304398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998647
B. Zat’ko, F. Dubecký, K. Sedlačková, A. Šagátová, P. Boháček, M. Sekáčová, V. Nečas
The 4H polytype SiC is a promising material for radiation-resistant sensors of ionizing particles. In this work we focused on the analysis of active region thickness of detectors based on 4H-SiC. The detectors investigated are fabricated from a 105 μm epitaxial layer grown on 350 μm 4H-SiC substrate. The circular Schottky contacts with diameter of 1.4 mm using an Au/Ni double layer were evaporated onto both sides of the detector material. The capacitance-voltage measurements allowed us to estimate free carrier concentration profile. The second method consists of measuring detection efficiency of γ-rays at reverse bias voltages up to 500 V.
{"title":"Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer","authors":"B. Zat’ko, F. Dubecký, K. Sedlačková, A. Šagátová, P. Boháček, M. Sekáčová, V. Nečas","doi":"10.1109/ASDAM.2014.6998647","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998647","url":null,"abstract":"The 4H polytype SiC is a promising material for radiation-resistant sensors of ionizing particles. In this work we focused on the analysis of active region thickness of detectors based on 4H-SiC. The detectors investigated are fabricated from a 105 μm epitaxial layer grown on 350 μm 4H-SiC substrate. The circular Schottky contacts with diameter of 1.4 mm using an Au/Ni double layer were evaporated onto both sides of the detector material. The capacitance-voltage measurements allowed us to estimate free carrier concentration profile. The second method consists of measuring detection efficiency of γ-rays at reverse bias voltages up to 500 V.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128369445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998637
M. Iwamoto, T. Manaka, D. Taguchi
By using a novel optical technique based on the electric field induced optical second harmonic generation (EFISHG) measurement, we can visualize carrier motions in organic devices. Basic concept for probing dynamical carrier motions by the EFISHG is described. We visualize carrier motions in organic field effect transistors, and model carrier transport mechanism. Further by coupling the EFISHG measurement with Displacement current measurement, we analyse carrier behaviours in organic memory elements with ferroelectric layer, in terms of turn-over of permanent dipoles in the ferroelectric layer.
{"title":"Probing and modelling of carrier transport in organic devices by optical second harmonic generation","authors":"M. Iwamoto, T. Manaka, D. Taguchi","doi":"10.1109/ASDAM.2014.6998637","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998637","url":null,"abstract":"By using a novel optical technique based on the electric field induced optical second harmonic generation (EFISHG) measurement, we can visualize carrier motions in organic devices. Basic concept for probing dynamical carrier motions by the EFISHG is described. We visualize carrier motions in organic field effect transistors, and model carrier transport mechanism. Further by coupling the EFISHG measurement with Displacement current measurement, we analyse carrier behaviours in organic memory elements with ferroelectric layer, in terms of turn-over of permanent dipoles in the ferroelectric layer.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131389143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998691
S. Luby, M. Jergel, M. Benkovicova, P. Šiffalovič, J. Ivančo, K. Vegso, E. Majková, R. Rella, M. G. Manera, S. Capone, I. Vávra
Gas sensors based on γ-Fe2O3 and CoFe2O4 nanoparticles (NPs) were prepared by Langmuir-Schaeffer deposition onto Al2O3 and auxilliary Si substrates. NPs with the size of 6.4 nm (Fe2O3) and 7.6 nm (CoFe2O4) and polydispersity of 9 % were fabricated by chemical route. NP arrays were analyzed by GIXRD, SEM, TEM, DLS and ellipsometry. Fe2O3 sensors show high response of 38 for 500 ppb of strongly oxidizing NO2. The response of CoFe2O4 sensors is 10 at 5 ppm of NO2. Sensitivities are lower with reducing CO and acetone gases. After one year storage at room temperature, a 6 % decrease of response was found. The sensor sensitivities are discussed comparing with the best published results so far.
{"title":"Sensitivity and long-term stability of γ-Fe2O3 and CoFe2O4 nanoparticle gas sensors for NO2, CO and acetone sensing — A comparative study","authors":"S. Luby, M. Jergel, M. Benkovicova, P. Šiffalovič, J. Ivančo, K. Vegso, E. Majková, R. Rella, M. G. Manera, S. Capone, I. Vávra","doi":"10.1109/ASDAM.2014.6998691","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998691","url":null,"abstract":"Gas sensors based on γ-Fe<sub>2</sub>O<sub>3</sub> and CoFe<sub>2</sub>O<sub>4</sub> nanoparticles (NPs) were prepared by Langmuir-Schaeffer deposition onto Al<sub>2</sub>O<sub>3</sub> and auxilliary Si substrates. NPs with the size of 6.4 nm (Fe<sub>2</sub>O<sub>3</sub>) and 7.6 nm (CoFe<sub>2</sub>O<sub>4</sub>) and polydispersity of 9 % were fabricated by chemical route. NP arrays were analyzed by GIXRD, SEM, TEM, DLS and ellipsometry. Fe<sub>2</sub>O<sub>3</sub> sensors show high response of 38 for 500 ppb of strongly oxidizing NO<sub>2</sub>. The response of CoFe<sub>2</sub>O<sub>4</sub> sensors is 10 at 5 ppm of NO<sub>2</sub>. Sensitivities are lower with reducing CO and acetone gases. After one year storage at room temperature, a 6 % decrease of response was found. The sensor sensitivities are discussed comparing with the best published results so far.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129792053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998644
P. Šutta, P. Calta, J. Mullerová, M. Netrvalová, R. Medlín, J. Savková, V. Vavruňková
Series of a-SiN:H thin films similar in thickness (380 ± 10 nm) and a-Si:H/a-Si3N4 multi-layered films (515 ± 20 nm) were prepared by PECVD technology from silane mixed with argon (90 % Ar/10 % SiH4) on Corning Eagle 2000 glass, SiO2 and silicon substrates. Deposition of thin films was carried out on a Samco PD 220 NA PECVD system. Multi-layered films were consequently annealed at high temperatures (700-1100°C) in order to obtain silicon nanocrystals embedded in a dielectric matrix suitable for photovoltaic and photonic applications. X-ray diffraction, Raman and FTIR spectroscopies, TEM, SEM, UV Vis spectrophotometry and spectroscopic ellipsometry were used for the evaluation of material properties of the films.
{"title":"Transition from A-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen","authors":"P. Šutta, P. Calta, J. Mullerová, M. Netrvalová, R. Medlín, J. Savková, V. Vavruňková","doi":"10.1109/ASDAM.2014.6998644","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998644","url":null,"abstract":"Series of a-SiN:H thin films similar in thickness (380 ± 10 nm) and a-Si:H/a-Si3N4 multi-layered films (515 ± 20 nm) were prepared by PECVD technology from silane mixed with argon (90 % Ar/10 % SiH4) on Corning Eagle 2000 glass, SiO2 and silicon substrates. Deposition of thin films was carried out on a Samco PD 220 NA PECVD system. Multi-layered films were consequently annealed at high temperatures (700-1100°C) in order to obtain silicon nanocrystals embedded in a dielectric matrix suitable for photovoltaic and photonic applications. X-ray diffraction, Raman and FTIR spectroscopies, TEM, SEM, UV Vis spectrophotometry and spectroscopic ellipsometry were used for the evaluation of material properties of the films.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131537414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998667
R. Maeta, H. Tokuda, M. Kuzuhara
We have studied current collapse in AlGaN/GaN HEMTs measured in the dark after turning off the light irradiation. The time dependence of the dynamic on-resistance was measured while keeping pulsed on/off switching sequence and energy levels of trapped electrons were measured as a function of elapsed time. The stress duration time after turning off the light is proposed to be an important factor for the precise evaluation of dynamic on-resistance.
{"title":"Analysis of time dependent current collapse in AlGaN/GaN HEMTs","authors":"R. Maeta, H. Tokuda, M. Kuzuhara","doi":"10.1109/ASDAM.2014.6998667","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998667","url":null,"abstract":"We have studied current collapse in AlGaN/GaN HEMTs measured in the dark after turning off the light irradiation. The time dependence of the dynamic on-resistance was measured while keeping pulsed on/off switching sequence and energy levels of trapped electrons were measured as a function of elapsed time. The stress duration time after turning off the light is proposed to be an important factor for the precise evaluation of dynamic on-resistance.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117332044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998663
A. Bairamis, A. Adikimenakis, A. O. Aijagunna, T. Kehagias, G. Dimitrakopulos, J. Kioseoglou, P. Komninou, C. Zervos, J. Kuzmík, A. Georgakilas
The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct InN nucleation on Si at low temperature and N-rich conditions.
{"title":"Different polarities of InN (0001) heterostructures on Si (111) substrates","authors":"A. Bairamis, A. Adikimenakis, A. O. Aijagunna, T. Kehagias, G. Dimitrakopulos, J. Kioseoglou, P. Komninou, C. Zervos, J. Kuzmík, A. Georgakilas","doi":"10.1109/ASDAM.2014.6998663","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998663","url":null,"abstract":"The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct InN nucleation on Si at low temperature and N-rich conditions.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114731039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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