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3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)最新文献

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Thermal properties of thin films measured by photothermal methods 用光热方法测量薄膜的热性能
J. Bodzenta, B. Burak, J. Szmidt
Determination of thermal properties of thin films deposited on thick substrates is a very complicated measuring problem. The influence of such films on the average thermal properties of the sample is small, which is why quite sophisticated experimental techniques must be used to solve the problem. The authors present two photothermal measuring methods allowing estimation of thermal properties of the film in two directions - parallel and perpendicular to the sample surface. The first method allows determination of the thermal conductivity of the film in the direction parallel to the sample surface. The method is based on analysis of thermal wave propagation from a point source. Signals are measured for a sample coated by a thin film and second sample without a coating are compared. This comparison allows an estimation of the influence of the thin film on heat transport and a determination of its thermal conductivity. The second method is based on the analysis of a thermal wave transition through an interface between the sample and its surroundings. This transition depends on the thermal properties of contacting media and may be modified by the film deposited on the sample surface. It is convenient to describe the influence of the film by its thermal resistance. This parameter may be interpreted as a ratio of film thickness to its effective thermal conductivity. In this case it is thermal conductivity in the direction perpendicular to the sample surface. As in the previous method signals are measured for a coated sample and a sample without coating are compared. Thermal properties of the thin films are measured by photothermal methods.
厚衬底上薄膜热性能的测定是一个非常复杂的测量问题。这种薄膜对样品的平均热性能的影响很小,这就是为什么必须使用相当复杂的实验技术来解决这个问题。作者提出了两种光热测量方法,可以在平行和垂直于样品表面的两个方向上估计薄膜的热性能。第一种方法允许在平行于样品表面的方向上测定薄膜的热导率。该方法基于对点源热波传播的分析。对涂有薄膜的样品和未涂有薄膜的样品进行了信号测量。这种比较可以估计薄膜对热传递的影响,并确定其导热性。第二种方法是基于分析通过样品和周围环境之间的界面的热波转换。这种转变取决于接触介质的热性能,并可由沉积在样品表面的薄膜加以修饰。用热阻来描述薄膜的影响是方便的。这个参数可以解释为薄膜厚度与其有效导热系数的比值。在这种情况下,它是垂直于样品表面方向的导热系数。在前面的方法中,信号是对有涂层的样品和没有涂层的样品进行测量的。用光热方法测定了薄膜的热性能。
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引用次数: 0
MOVPE deposition of AlAs/In/sub 0.53/Ga/sub 0.47/As/InP resonant tunnelling heterostructure performing high PVR parameter 具有高PVR参数的AlAs/In/sub 0.53/Ga/sub 0.47/As/InP共振隧穿异质结构的MOVPE沉积
K. Kosiel, L. Dobrzański, B. Majkusiak, A. Jasik
The RT (Resonant Tunnelling) AIAs/Ino 53Ga 4.1As/l# heterostructure employed in our measurements was deposited on nominally (001) oriented I# S n+ (2x10 'cm )substrates The layer sequence was as follows (i) 600nm n+ InP.Si bottom contact layer (n=S~lO'*cm-~()i,i ) 600 nm nf Inos3Gao47As contact layer (n=5~10'*cm'~)(,i ii) 100 nm n In0 53Ga047As Si contact layer (n=l~lO'~cm''), (iv) 5nm undoped IQ s~Ga47As spacer layer, (v) 4 3nm undoped AlAs barrier layer, (vi) 5nm undoped In0 53Gao 47As quantum well layer, (vii) 4 3nm undoped AlAs barrier layer, (viii) 5nm undoped InossGao47As spacer layer, (ix) 100 nm n InoaGao47As.Si contact layer (n=l~lO"cm~~(x)), 100 nm n+ I ~ I o ~ ~ G Qco~nt~acAt s layer (n=5x10'*cniJ) Undo ed LP MOVPE layers have typically not intentional n-type doping level of about 2 ~ 1 0 ' ~ c mTh~e ~sc heme of the epilayers design concerning our RTS (Resonant Tunnelling Structure).
在我们的测量中使用的RT(共振隧道)AIAs/Ino 53Ga 4.1As/l#异质结构沉积在名义上(001)取向的I# S n+ (2x10 'cm)衬底上,层序如下:(I) 600nm n+ InP。Si底部接触层(n=S~lO′*cm-~)()i,i) 600 nm nm nm inos3高47as接触层(n=5~10′*cm ~ ~)(,i ii) 100 nm n In0 53Ga047As Si接触层(n= 1 ~lO′~cm”),(iv) 5nm未掺杂IQ S~ Ga47As间隔层,(v) 4 3nm未掺杂AlAs势垒层,(vi) 5nm未掺杂In0 53Gao 47As量子阱层,(vii) 4 3nm未掺杂AlAs势垒层,(viii) 5nm未掺杂inoss高47as间隔层,(ix) 100 nm n InoaGao47As。Si接触层(n= 1 ~lO”cm~~(x)), 100 nm n+ I ~ I ~ o~ ~ G Qco~nt~acAt s层(n=5 × 10’*cniJ) Undo ed LP MOVPE层的n型掺杂水平通常为2 ~ 10’~ cm~ e ~sc,这是我们设计的RTS(谐振隧道结构)涂层的典型特点。
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引用次数: 0
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3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)
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