V. Babaev, N. Savchenko, M. Guseva, V.P. Vaullin, V. S. Guden, V. V. Khvostov
c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.
{"title":"c-BN coating produced by arc-jet plasma","authors":"V. Babaev, N. Savchenko, M. Guseva, V.P. Vaullin, V. S. Guden, V. V. Khvostov","doi":"10.1109/WBL.2001.946566","DOIUrl":"https://doi.org/10.1109/WBL.2001.946566","url":null,"abstract":"c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132576044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Lifshitz, N. Shang, X. Duan, Q. Li, L. Peng, I. Bello, S. Lee
Nucleation of diamond on non-diamond substrates is one of the most studied and least understood elements of the field of diamond films. This issue is crucial for the production of epitaxial single crystalline diamond on silicon, The most reliable method for nucleation of diamond on nondiamond substrates currently applied is bias enhanced nucleation (BEN). Oriented growth of diamond on non-diamond substrates is achieved by bombardment of the biased substrate with energetic species formed in a CH/sub 4//H/sub 2/ plasma (several percent CH/sub 4/). Previous attempts to systematically nucleate diamond on non-diamond substrates by direct ion beam bombardment have failed, though sporadic reports on diamond formation using ion beams have appeared. In the present work we report the nucleation of diamond on silicon substrates by direct ion beam deposition (using a Kaufmann source fed by a mixture of gases). High resolution TEM reveals diamond nuclei in two different nucleation environments: directly on the silicon substrate; and embedded in an amorphous carbon matrix.
{"title":"Ion beam nucleation of diamond","authors":"Y. Lifshitz, N. Shang, X. Duan, Q. Li, L. Peng, I. Bello, S. Lee","doi":"10.1109/WBL.2001.946539","DOIUrl":"https://doi.org/10.1109/WBL.2001.946539","url":null,"abstract":"Nucleation of diamond on non-diamond substrates is one of the most studied and least understood elements of the field of diamond films. This issue is crucial for the production of epitaxial single crystalline diamond on silicon, The most reliable method for nucleation of diamond on nondiamond substrates currently applied is bias enhanced nucleation (BEN). Oriented growth of diamond on non-diamond substrates is achieved by bombardment of the biased substrate with energetic species formed in a CH/sub 4//H/sub 2/ plasma (several percent CH/sub 4/). Previous attempts to systematically nucleate diamond on non-diamond substrates by direct ion beam bombardment have failed, though sporadic reports on diamond formation using ion beams have appeared. In the present work we report the nucleation of diamond on silicon substrates by direct ion beam deposition (using a Kaufmann source fed by a mixture of gases). High resolution TEM reveals diamond nuclei in two different nucleation environments: directly on the silicon substrate; and embedded in an amorphous carbon matrix.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115840305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Niedzielski, W. Kaczorowski, J. Grabarczyk, A. Gołąbczak, T. Błaszczyk
The present work is devoted to the production, investigation and application of thin films of nanocrystalline diamond (NCD) deposited in radiofrequency (RF) plasma onto the cutting edges of sintered carbide tools.
本文主要研究了射频等离子体沉积纳米晶金刚石(NCD)薄膜在硬质合金刀具刃口的制备、研究和应用。
{"title":"Nanocrystalline diamond films for cutting tools","authors":"P. Niedzielski, W. Kaczorowski, J. Grabarczyk, A. Gołąbczak, T. Błaszczyk","doi":"10.1109/WBL.2001.946607","DOIUrl":"https://doi.org/10.1109/WBL.2001.946607","url":null,"abstract":"The present work is devoted to the production, investigation and application of thin films of nanocrystalline diamond (NCD) deposited in radiofrequency (RF) plasma onto the cutting edges of sintered carbide tools.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115472330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Zapien, R. Collins, L. J. Pillone, H. Qi, R. Messier
We report the application of the UV-extended multichannel ellipsometer in studies of the growth and layered structure of cBN films deposited on c-Si using pulsed dc sputtering of a B/sub 4/C target with rf substrate bias.
{"title":"Real time characterization of wide band gap thin film growth using UV-extended spectroscopic ellipsometry: applications to cubic boron nitride","authors":"J. Zapien, R. Collins, L. J. Pillone, H. Qi, R. Messier","doi":"10.1109/WBL.2001.946549","DOIUrl":"https://doi.org/10.1109/WBL.2001.946549","url":null,"abstract":"We report the application of the UV-extended multichannel ellipsometer in studies of the growth and layered structure of cBN films deposited on c-Si using pulsed dc sputtering of a B/sub 4/C target with rf substrate bias.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126222169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The growth technique atomic layer epitaxy (ALE) has been optimised to produce large area and efficient thin film electroluminescent (TFEL) devices. The author briefly reviews the advantages of the ALE growth technique and its applications. He then describes in more detail various attempts to get a bright multi-colour light emission from wide band gap II-VI semiconductor ALE films, and explains the mechanisms of emission excitation in TFEL structures. Competing approaches to obtain bright blue, green and red electroluminescence are described and analysed.
{"title":"Thin films of wide band gap II-VI compounds grown by atomic layer epitaxy-properties and application","authors":"M. Godlewski","doi":"10.1109/WBL.2001.946540","DOIUrl":"https://doi.org/10.1109/WBL.2001.946540","url":null,"abstract":"The growth technique atomic layer epitaxy (ALE) has been optimised to produce large area and efficient thin film electroluminescent (TFEL) devices. The author briefly reviews the advantages of the ALE growth technique and its applications. He then describes in more detail various attempts to get a bright multi-colour light emission from wide band gap II-VI semiconductor ALE films, and explains the mechanisms of emission excitation in TFEL structures. Competing approaches to obtain bright blue, green and red electroluminescence are described and analysed.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126592617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work deals with a special class of functional ceramic materials, namely gas-sensitive layers made of wide bandgap oxide semiconductors. At present, SnO/sub 2/ semiconductor gas sensors are most frequently produced, because no material capable of competing with tin oxide in performance has been development. Rather than continuing with the search for a new material, a recent trend indicates more detailed study of SnO/sub 2/ to increase its performance.
{"title":"Polycrystalline wide bandgap materials in sensor technology","authors":"B. Licznerski, K. Nitsch, H. Teterycz","doi":"10.1109/WBL.2001.946542","DOIUrl":"https://doi.org/10.1109/WBL.2001.946542","url":null,"abstract":"This work deals with a special class of functional ceramic materials, namely gas-sensitive layers made of wide bandgap oxide semiconductors. At present, SnO/sub 2/ semiconductor gas sensors are most frequently produced, because no material capable of competing with tin oxide in performance has been development. Rather than continuing with the search for a new material, a recent trend indicates more detailed study of SnO/sub 2/ to increase its performance.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130733569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The B-N-C-Si system compiles crystalline and disordered phases which combine exceptional electronic band structures, hardness and other mechanical properties and some kind of chemical inertness. Electronic application of materials from B-C-N-Si compositional tetrahedron are successful in many respects but also poses many problems and obstacles in the development of practical devices. These problems are related in part to the growth processes and growth defccts because of difficulty of matching the requirements for the electronic devices with the real materials. This review follows a sequence from the quatemary B-C-N-Si phases to diamond. There is a renewed interest in the synthesis of Si-N-C ceramic bodies using polysilazancs as precursors.
{"title":"The electronic application of materials from the B-N-C-Si compositional tetrahedron","authors":"A. Badzian","doi":"10.1109/WBL.2001.946541","DOIUrl":"https://doi.org/10.1109/WBL.2001.946541","url":null,"abstract":"The B-N-C-Si system compiles crystalline and disordered phases which combine exceptional electronic band structures, hardness and other mechanical properties and some kind of chemical inertness. Electronic application of materials from B-C-N-Si compositional tetrahedron are successful in many respects but also poses many problems and obstacles in the development of practical devices. These problems are related in part to the growth processes and growth defccts because of difficulty of matching the requirements for the electronic devices with the real materials. This review follows a sequence from the quatemary B-C-N-Si phases to diamond. There is a renewed interest in the synthesis of Si-N-C ceramic bodies using polysilazancs as precursors.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133798692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carbon nitride is an example of real engineering efforts in the field of materials engineering. It has been designed based on a detailed analysis of the theory of a solid body, its identification data have been calculated and then technological experiments have been carried out. Now it is known that carbon nitride is a high-pressure phase and, thus, under conditions of layer synthesis, it may be unstable. All the synthesis methods used nowadays employ electric activation of the synthesis medium, Electric energy is thus an additional state parameter. The paper presents a literature review of the methods for the synthesis of carbon nitride, such as: PLA, LCVD, RFCVD, MWCVD, HFCVD, DSPVD, TSPVD, IBS, DCM, SAIP, FAD, IPD.
{"title":"Carbon nitride - the review of deposition methods","authors":"M. Mirkowska, K. Zdunek","doi":"10.1109/WBL.2001.946561","DOIUrl":"https://doi.org/10.1109/WBL.2001.946561","url":null,"abstract":"Carbon nitride is an example of real engineering efforts in the field of materials engineering. It has been designed based on a detailed analysis of the theory of a solid body, its identification data have been calculated and then technological experiments have been carried out. Now it is known that carbon nitride is a high-pressure phase and, thus, under conditions of layer synthesis, it may be unstable. All the synthesis methods used nowadays employ electric activation of the synthesis medium, Electric energy is thus an additional state parameter. The paper presents a literature review of the methods for the synthesis of carbon nitride, such as: PLA, LCVD, RFCVD, MWCVD, HFCVD, DSPVD, TSPVD, IBS, DCM, SAIP, FAD, IPD.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124184885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The author points out the improvement of tribological behaviour of a Co-Cr-Mo alloy surface modified with a nanocrystalline diamond layer by RF-PCVD. With this surface treatment it is possible to decrease the friction coefficient and wear rate of the implant alloy in respect to untreated material.
{"title":"The effect of nanocrystalline diamond layers on the tribological properties of an implant Co-Cr-Mo alloy","authors":"Gil Malgorzata","doi":"10.1109/WBL.2001.946582","DOIUrl":"https://doi.org/10.1109/WBL.2001.946582","url":null,"abstract":"The author points out the improvement of tribological behaviour of a Co-Cr-Mo alloy surface modified with a nanocrystalline diamond layer by RF-PCVD. With this surface treatment it is possible to decrease the friction coefficient and wear rate of the implant alloy in respect to untreated material.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121427185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Grądzka-Dahlke, V.N. Grib, J. Dąbrowski, V.G. Karolinskiy, V. Khvisevich, M. Sazonov
At the present time there are a number of methods for obtaining diamond-like carbon films. One of the most efficient techniques is the CVD method used for depositing films from the gaseous phase in a vacuum with the pressure maintained at low levels. To achieve high rates of film growth, when using this method, it is necessary to generate a supersonic Ar plasma jet and inject into it various mixtures of gases with carbon-containing reactants (CH/sub 4/, C/sub 2/H/sub 2/, etc.). The deposition of films was carried out by means of the VPP-2 vacuum plasma setup, developed by Brest Technical University in cooperation with Smorgon Optical Machine-Tool factory. The properties of the obtained films were studied using such conventional analytical methods as: Optical Emission Spectroscopy, Coherent Anti-Stokes Raman Scattering-CARS, Auger and Scanning Electron Microscopy and Secondary Ion Mass Spectroscopy. The results of the investigation show that the size of sp/sup 3/ and sp/sup 2/ hybridized crystalline clusters is dependent on the temperature and the bias voltage of the substrate. The deposited films are of the i-C and a-C types. The film deposition rate is 50 to 120 /spl mu/m/h, depending on the chemical composition of the plasma jet, its power and the substrate temperature.
{"title":"Depositing of diamond-like films by plasma jets","authors":"M. Grądzka-Dahlke, V.N. Grib, J. Dąbrowski, V.G. Karolinskiy, V. Khvisevich, M. Sazonov","doi":"10.1109/WBL.2001.946563","DOIUrl":"https://doi.org/10.1109/WBL.2001.946563","url":null,"abstract":"At the present time there are a number of methods for obtaining diamond-like carbon films. One of the most efficient techniques is the CVD method used for depositing films from the gaseous phase in a vacuum with the pressure maintained at low levels. To achieve high rates of film growth, when using this method, it is necessary to generate a supersonic Ar plasma jet and inject into it various mixtures of gases with carbon-containing reactants (CH/sub 4/, C/sub 2/H/sub 2/, etc.). The deposition of films was carried out by means of the VPP-2 vacuum plasma setup, developed by Brest Technical University in cooperation with Smorgon Optical Machine-Tool factory. The properties of the obtained films were studied using such conventional analytical methods as: Optical Emission Spectroscopy, Coherent Anti-Stokes Raman Scattering-CARS, Auger and Scanning Electron Microscopy and Secondary Ion Mass Spectroscopy. The results of the investigation show that the size of sp/sup 3/ and sp/sup 2/ hybridized crystalline clusters is dependent on the temperature and the bias voltage of the substrate. The deposited films are of the i-C and a-C types. The film deposition rate is 50 to 120 /spl mu/m/h, depending on the chemical composition of the plasma jet, its power and the substrate temperature.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114786157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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