E. Dusiński, J. Szmidt, K. Zdunek, M. Elert, A. Barcz
The authors study TiO/sub 2/ layers produced by Reactive Pulse Plasma (RPP) deposition on semiconductor substrates. The layers have been investigated both in terms of structure and electrophysical properties. The thickness and refractive index, the structure and the chemical composition were examined by ellipsometry, SEM and SIMS, respectively. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MOS structures were determined. The layers obtained show satisfactory mechanical and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectric gate.
{"title":"Titanium oxide produced by plasma technology for MOS structures","authors":"E. Dusiński, J. Szmidt, K. Zdunek, M. Elert, A. Barcz","doi":"10.1109/WBL.2001.946608","DOIUrl":"https://doi.org/10.1109/WBL.2001.946608","url":null,"abstract":"The authors study TiO/sub 2/ layers produced by Reactive Pulse Plasma (RPP) deposition on semiconductor substrates. The layers have been investigated both in terms of structure and electrophysical properties. The thickness and refractive index, the structure and the chemical composition were examined by ellipsometry, SEM and SIMS, respectively. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MOS structures were determined. The layers obtained show satisfactory mechanical and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectric gate.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130981786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boron nitride can be synthesised in two major crystalline polytypes, the hexagonal (h-BN) and the cubic one (c-BN), related respectively to the sp2 and the sp3 hybridation of the chemical bondings of both atomic species. The cubic form is very attractive, due to its extreme properties, similar to those of diamond in term of hardness, thermal conductivity, chemical inertness and optical transparency, It is even more stable against oxidation up to higher temperature, and can be doped whether P or N type, making it a candidate for applications in power electronics. Classically, c-BN can be synthesised under high pressure and high temperature, but more recently PVD and CVD have been successfully employed to obtain thin films. In these later cases, the growth process requires bombardment with energetic particles, and general ways the structure is left in compressive stress after deposition and delamination or cracking of the film can occur. We have deposited boron nitride thin films on silicon substrates at low temperature (below 300/spl deg/C) in a microwave plasma enhanced chemical vapor deposition (PECVD) apparatus, An organometallic compound, borane dimethyl amine, was used as boron precursor. To promote the growth of the cubic phase a negative self bias was applied to the sample holder by mean of a 13.56 MHz RF signal. Characterisation of the samples involve infra red and Raman spectrometries, and atomic force microscopy. Films containing a fraction of c-BN, as high as 98%, have been obtained, as can be seen on the infra red spectra. The ratio has been determined according to the relative intensity of the active IR mode of the cubic and the hexagonal phases. At normal incidence only the transversal optical (TO) modes are observed, whereas at oblique incidence the longitudinal optical (LO) modes are also evidenced, according to the Berreman effect. The c-BN TO absorption band is observed at 1071 cm/sup -1/ and its associated LO mode is located at 1267 cm/sup -1/. The films exhibit a very low roughness, as observe by atomic force microscopy, and contain nanocrystals of about 10 nm averaged size, as deduced from the Raman measurements. These deposits are very adherent and do not delaminate even after more than one year. Also, PECVD seems to be a promising method for the synthesis of c-BN layers.
{"title":"Synthesis of cubic boron nitride thin films by microwave PECVD","authors":"P. Thévenin, A. Soltani, A. Bath","doi":"10.1109/WBL.2001.946567","DOIUrl":"https://doi.org/10.1109/WBL.2001.946567","url":null,"abstract":"Boron nitride can be synthesised in two major crystalline polytypes, the hexagonal (h-BN) and the cubic one (c-BN), related respectively to the sp2 and the sp3 hybridation of the chemical bondings of both atomic species. The cubic form is very attractive, due to its extreme properties, similar to those of diamond in term of hardness, thermal conductivity, chemical inertness and optical transparency, It is even more stable against oxidation up to higher temperature, and can be doped whether P or N type, making it a candidate for applications in power electronics. Classically, c-BN can be synthesised under high pressure and high temperature, but more recently PVD and CVD have been successfully employed to obtain thin films. In these later cases, the growth process requires bombardment with energetic particles, and general ways the structure is left in compressive stress after deposition and delamination or cracking of the film can occur. We have deposited boron nitride thin films on silicon substrates at low temperature (below 300/spl deg/C) in a microwave plasma enhanced chemical vapor deposition (PECVD) apparatus, An organometallic compound, borane dimethyl amine, was used as boron precursor. To promote the growth of the cubic phase a negative self bias was applied to the sample holder by mean of a 13.56 MHz RF signal. Characterisation of the samples involve infra red and Raman spectrometries, and atomic force microscopy. Films containing a fraction of c-BN, as high as 98%, have been obtained, as can be seen on the infra red spectra. The ratio has been determined according to the relative intensity of the active IR mode of the cubic and the hexagonal phases. At normal incidence only the transversal optical (TO) modes are observed, whereas at oblique incidence the longitudinal optical (LO) modes are also evidenced, according to the Berreman effect. The c-BN TO absorption band is observed at 1071 cm/sup -1/ and its associated LO mode is located at 1267 cm/sup -1/. The films exhibit a very low roughness, as observe by atomic force microscopy, and contain nanocrystals of about 10 nm averaged size, as deduced from the Raman measurements. These deposits are very adherent and do not delaminate even after more than one year. Also, PECVD seems to be a promising method for the synthesis of c-BN layers.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128318447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Harris, P. Ericsson, S. Savage, A. Konstantinov, M. Bakowski
Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.
{"title":"Realising the potential of SiC devices","authors":"C. Harris, P. Ericsson, S. Savage, A. Konstantinov, M. Bakowski","doi":"10.1109/WBL.2001.946555","DOIUrl":"https://doi.org/10.1109/WBL.2001.946555","url":null,"abstract":"Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117050538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Bieniek, A. Wojtkiewicz, L. Lukasiak, R. B. Beck
Two different methods of ultrathin oxide formation are studied here, classical thermal oxidation and Grilox (see Borsoni et al., Microelectronics Reliability). It was proved that the quality of the passivating layer has a crucial influence on the overall properties of the gate stack in all cases, for the well established technology of Si/sub 3/N/sub 4/, as well as for HfO/sub 2/ (still under investigation). The interface trap density distributions in the Si forbidden gap for exemplary test devices are presented.
{"title":"Silicon dioxide as passivating, ultrathin layer in MOSFET gate stacks","authors":"T. Bieniek, A. Wojtkiewicz, L. Lukasiak, R. B. Beck","doi":"10.1109/WBL.2001.946588","DOIUrl":"https://doi.org/10.1109/WBL.2001.946588","url":null,"abstract":"Two different methods of ultrathin oxide formation are studied here, classical thermal oxidation and Grilox (see Borsoni et al., Microelectronics Reliability). It was proved that the quality of the passivating layer has a crucial influence on the overall properties of the gate stack in all cases, for the well established technology of Si/sub 3/N/sub 4/, as well as for HfO/sub 2/ (still under investigation). The interface trap density distributions in the Si forbidden gap for exemplary test devices are presented.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121250502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Mitura, K. Bąkowicz, P. Niedzielski, E. Mitura, A. Karczemska, A. Sokołowska, J. Szmidt, J. Hassard
Presents experiments from which the authors conclude: Diamond powder has antioxidant properties in blood plasma, prooxidant properties in the chain reactions with linolenic acid. Diamond powder does not stimulate catalase activity. Diamond powder increases the activity of lipoxygenase in presence hydrogen peroxide. In vivo diamond powder doesn't cause toxic responses in the human body, damage of tissue structure and proliferation of connective tissue. NCD as a powder has a very high biocompatibility. NCD coating consists of NCD powder particles. NCD coating is an ideal biomaterial for medical implants because its biological, chemical and physical properties are the best among all biomaterials.
{"title":"Inertness of diamond - truth or false","authors":"S. Mitura, K. Bąkowicz, P. Niedzielski, E. Mitura, A. Karczemska, A. Sokołowska, J. Szmidt, J. Hassard","doi":"10.1109/WBL.2001.946554","DOIUrl":"https://doi.org/10.1109/WBL.2001.946554","url":null,"abstract":"Presents experiments from which the authors conclude: Diamond powder has antioxidant properties in blood plasma, prooxidant properties in the chain reactions with linolenic acid. Diamond powder does not stimulate catalase activity. Diamond powder increases the activity of lipoxygenase in presence hydrogen peroxide. In vivo diamond powder doesn't cause toxic responses in the human body, damage of tissue structure and proliferation of connective tissue. NCD as a powder has a very high biocompatibility. NCD coating consists of NCD powder particles. NCD coating is an ideal biomaterial for medical implants because its biological, chemical and physical properties are the best among all biomaterials.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129236701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Bogusławski, P. Couvrat, K. Jóźwik, P. Niedzielski, J. Moll, Z. Nawrat, B. Walkowiak, A. Niedzielska, J. Szmidt, A. Sokołowska, S. Mitura
Development in thin-layer diamond-like coatings is a very crucial advance in the field of improvement of biomaterial biocompatibility. Owing to their already investigated properties, diamond-like carbon (DLC) and nanocrystalline diamond (NCD) coatings deposited on implants, which are made of materials that can cause undesirable reactions in the organism, can significantly improve the parameters a spare part of the human body should be characterised by. Diamond-like carbon (DLC) is attractive as a wear-resistant coating for biomedical applications due to its high hardness and low coefficient of friction, chemical inertness and smooth surface finish. One important property of both hard and soft DLC is their biocompatibility, and the potential of DLC coatings for biomedical applications has been extensively reported in the literature. In addition to biocompatibility, this potential is related to the fact that DLC is wear-resistant, smooth/low friction, and inert to chemical attack, and it forms a hermetic coating.
{"title":"Artificial heart valve with NCD coating","authors":"G. Bogusławski, P. Couvrat, K. Jóźwik, P. Niedzielski, J. Moll, Z. Nawrat, B. Walkowiak, A. Niedzielska, J. Szmidt, A. Sokołowska, S. Mitura","doi":"10.1109/WBL.2001.946591","DOIUrl":"https://doi.org/10.1109/WBL.2001.946591","url":null,"abstract":"Development in thin-layer diamond-like coatings is a very crucial advance in the field of improvement of biomaterial biocompatibility. Owing to their already investigated properties, diamond-like carbon (DLC) and nanocrystalline diamond (NCD) coatings deposited on implants, which are made of materials that can cause undesirable reactions in the organism, can significantly improve the parameters a spare part of the human body should be characterised by. Diamond-like carbon (DLC) is attractive as a wear-resistant coating for biomedical applications due to its high hardness and low coefficient of friction, chemical inertness and smooth surface finish. One important property of both hard and soft DLC is their biocompatibility, and the potential of DLC coatings for biomedical applications has been extensively reported in the literature. In addition to biocompatibility, this potential is related to the fact that DLC is wear-resistant, smooth/low friction, and inert to chemical attack, and it forms a hermetic coating.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125799699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Diamond-like carbon layers were deposited onto silicon wafers by PA RF CVD method in a plasma reactor with methane as a source of carbon, and 13.56 MHz frequency generator. The technology is very sensitive to the shape of the electrodes and specimens placement on them. The experiments were conducted in the reactor with the flat upper electrode, placed parallel and very close to the RF electrode. This geometry solution was to assure the uniformity of the electric field in the active area. The tests were to show how the process parameters influence the quality of deposited films. They proved that the most significant parameter is the self-bias voltage. A change of the self-bias value caused a considerable change in the structure of the deposited carbon layer. The carbon structures were examined by TEM and AFM. Independently to the carbon forms, which prevailed in the tested films, the morphology of the obtained films was uniform on the whole RF electrode.
{"title":"Quality of wide band nanocrystalline carbon layers deposited in PA CVD","authors":"M. Langer, Z. Lisik","doi":"10.1109/WBL.2001.946570","DOIUrl":"https://doi.org/10.1109/WBL.2001.946570","url":null,"abstract":"Diamond-like carbon layers were deposited onto silicon wafers by PA RF CVD method in a plasma reactor with methane as a source of carbon, and 13.56 MHz frequency generator. The technology is very sensitive to the shape of the electrodes and specimens placement on them. The experiments were conducted in the reactor with the flat upper electrode, placed parallel and very close to the RF electrode. This geometry solution was to assure the uniformity of the electric field in the active area. The tests were to show how the process parameters influence the quality of deposited films. They proved that the most significant parameter is the self-bias voltage. A change of the self-bias value caused a considerable change in the structure of the deposited carbon layer. The carbon structures were examined by TEM and AFM. Independently to the carbon forms, which prevailed in the tested films, the morphology of the obtained films was uniform on the whole RF electrode.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125968491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nanocrystalline silicon carbide thin films were prepared by a modified vacuum arc method of deposition using a silicon carbide cathode. For modification of optical properties some films were doped by RE metals from special evaporator during deposition. Thin SiC films deposited at room temperature were amorphous and had substantial stress. The phase transition from amorphous silicon carbide to nanocrystalline silicon carbide occurred at deposition temperature 450-500/spl deg/C. The properties and structure of nanocrystalline SiC films mainly depended on the substrate temperature and energy of deposited ions.
{"title":"Low temperature deposition and optical properties of RE doped nanocrystalline SiC films","authors":"A. Semenov, O.G. Tovmachenko, V. Puzikov","doi":"10.1109/WBL.2001.946579","DOIUrl":"https://doi.org/10.1109/WBL.2001.946579","url":null,"abstract":"Nanocrystalline silicon carbide thin films were prepared by a modified vacuum arc method of deposition using a silicon carbide cathode. For modification of optical properties some films were doped by RE metals from special evaporator during deposition. Thin SiC films deposited at room temperature were amorphous and had substantial stress. The phase transition from amorphous silicon carbide to nanocrystalline silicon carbide occurred at deposition temperature 450-500/spl deg/C. The properties and structure of nanocrystalline SiC films mainly depended on the substrate temperature and energy of deposited ions.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132852528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Planar heterostructures (/spl alpha/C-i-/spl alpha/C have been made by fine focused 100 keV Ga/sup +/ ion beam implantation on polished surfaces of high quality free standing polycrystalline (5 to 20 /spl mu/m grains) CVD diamond films. The structures consist of two irradiated square areas (amorphous carbon regions /spl alpha/C; irradiation dose from 5.2/spl times/10/sup 14/ to 2.6/spl times/10/sup 16/ cm/sup -2/; size from 10/spl times/10 to 30/spl times/30 /spl mu/m/sup 2/) separated by nominally non-irradiated gap (i-region) of a width varying from 1.6 to 30 /spl mu/m. Micro-Raman topography and AFM characterization of the structures reveal full conversion of diamond into amorphous carbon for the doses above 10/sup 15/ cm/sup -2/. The structures with highly irradiated (/spl alpha/C regions and narrow i-regions exhibit almost Ohmic current-voltage characteristics whereas these with wide i-regions and irradiated with moderate doses show exponential I-V curves of a type I-exp(V/sup n/), where n, may vary from 0.2 to 2. The conductivity of structures with a strong nonlinear behavior reveals different activation energies E/sub a/ in low (10/sup 3/ V/cm) and high (10/sup 5/ V/cm) electrical fields: in the former case E/sub a/. varies from 0.04 to 0. 17 eV, whereas in the latter case it is of 0.3 eV. The mechanisms of the conductivity of the structures is believed to be (i) variable range hopping over the electronic states of the growth defects of polycrystalline diamond CVD and the radiation defects created in the /spl alpha/C-i junctions as well as (ii) electron injection into the intrinsic diamond from the /spl alpha/C regions.
{"title":"Electronic properties of unipolar heterostructures amorphous carbon diamond - amorphous carbon","authors":"I. Dobrinets, A. Zaitsev, T. Etzel, A. Wieck","doi":"10.1109/WBL.2001.946573","DOIUrl":"https://doi.org/10.1109/WBL.2001.946573","url":null,"abstract":"Planar heterostructures (/spl alpha/C-i-/spl alpha/C have been made by fine focused 100 keV Ga/sup +/ ion beam implantation on polished surfaces of high quality free standing polycrystalline (5 to 20 /spl mu/m grains) CVD diamond films. The structures consist of two irradiated square areas (amorphous carbon regions /spl alpha/C; irradiation dose from 5.2/spl times/10/sup 14/ to 2.6/spl times/10/sup 16/ cm/sup -2/; size from 10/spl times/10 to 30/spl times/30 /spl mu/m/sup 2/) separated by nominally non-irradiated gap (i-region) of a width varying from 1.6 to 30 /spl mu/m. Micro-Raman topography and AFM characterization of the structures reveal full conversion of diamond into amorphous carbon for the doses above 10/sup 15/ cm/sup -2/. The structures with highly irradiated (/spl alpha/C regions and narrow i-regions exhibit almost Ohmic current-voltage characteristics whereas these with wide i-regions and irradiated with moderate doses show exponential I-V curves of a type I-exp(V/sup n/), where n, may vary from 0.2 to 2. The conductivity of structures with a strong nonlinear behavior reveals different activation energies E/sub a/ in low (10/sup 3/ V/cm) and high (10/sup 5/ V/cm) electrical fields: in the former case E/sub a/. varies from 0.04 to 0. 17 eV, whereas in the latter case it is of 0.3 eV. The mechanisms of the conductivity of the structures is believed to be (i) variable range hopping over the electronic states of the growth defects of polycrystalline diamond CVD and the radiation defects created in the /spl alpha/C-i junctions as well as (ii) electron injection into the intrinsic diamond from the /spl alpha/C regions.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121736034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hydrogenated amorphous silicon-nitrogen (a-Si/sub 1-x/N/sub x/:H) thin films are interesting for optoelectronic applications. The optical gap of this material varies in the range from 1.8 to 3 eV depending mainly on the nitrogen content. The electronic, optical and structural properties are influenced by the technological parameters. The authors deposited hydrogenated amorphous silicon-nitrogen thin films by the use of Plasma Enhanced Chemical Vapour Deposition (PECVD). The system consisted of an ultra high vacuum chamber equipped with 13.56 MHz RF generator, separate gas lines with gas flow meters, turbomolecular pumps with automatic pressure control and a precise temperature regulator. It was possible to obtain 10/spl times/10 cm/sup 2/ homogeneous films with reproducible properties in a silane-ammonia gas mixture, Optical, structural, chemical composition and electrical properties of a-Si/sub (1-x)/N/sub x/:H were examined by optical and infrared spectroscopy, conductivity and photoconductivity measurements. The films revealed the monotonic increase in optical gap value with nitrogen content increase. The nitrogen rich samples exhibit low photoconductivity and a wide bandgap. These materials could substitute for hydrogenated amorphous silicon for such applications as solar cells or photodetectors.
{"title":"Amorphous hydrogenated silicon-nitrogen (a-Si/sub 1-x/N/sub x/:H) films deposited by PECVD","authors":"S. Jonas, T. Stapiński, E. Walasek, M. Chrabąszcz","doi":"10.1109/WBL.2001.946564","DOIUrl":"https://doi.org/10.1109/WBL.2001.946564","url":null,"abstract":"Hydrogenated amorphous silicon-nitrogen (a-Si/sub 1-x/N/sub x/:H) thin films are interesting for optoelectronic applications. The optical gap of this material varies in the range from 1.8 to 3 eV depending mainly on the nitrogen content. The electronic, optical and structural properties are influenced by the technological parameters. The authors deposited hydrogenated amorphous silicon-nitrogen thin films by the use of Plasma Enhanced Chemical Vapour Deposition (PECVD). The system consisted of an ultra high vacuum chamber equipped with 13.56 MHz RF generator, separate gas lines with gas flow meters, turbomolecular pumps with automatic pressure control and a precise temperature regulator. It was possible to obtain 10/spl times/10 cm/sup 2/ homogeneous films with reproducible properties in a silane-ammonia gas mixture, Optical, structural, chemical composition and electrical properties of a-Si/sub (1-x)/N/sub x/:H were examined by optical and infrared spectroscopy, conductivity and photoconductivity measurements. The films revealed the monotonic increase in optical gap value with nitrogen content increase. The nitrogen rich samples exhibit low photoconductivity and a wide bandgap. These materials could substitute for hydrogenated amorphous silicon for such applications as solar cells or photodetectors.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125910754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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