B. Marczewska, T. Nowak, P. Olko, M. Waligórski, M. Nesladek
Several batches of CVD diamonds obtained commercially from De Beers Company and produced at the Institute of Materials Research at Limburg University (Belgium) have been used in our study. CVD diamonds were investigated with respect to their TL properties Irradiated CVD diamonds feature glow curves in which a dominant peak with a maximum at about 240/spl deg/C can be used for dosimetry, with sensitivity (TL output per Gy) comparable to that of commercial LiF:Mg,Ti (TLD-100, MTS-N) CVD diamonds produced at Limburg University were investigated with respect to their electrical parameters. A special contact preparation technique was developed. Gold contacts were placed on opposite sides of the crystals. The crystals were encapsulated in a special holder. Current and charge were measured by a UNIDOS (PTW Freiburg) electrometer. The bias current of 0.8 mm thick crystals was less than 1 pA.
{"title":"CVD diamonds as active and passive detectors of ionising radiation. Assessment of their applicability for medical dosimetry","authors":"B. Marczewska, T. Nowak, P. Olko, M. Waligórski, M. Nesladek","doi":"10.1109/WBL.2001.946594","DOIUrl":"https://doi.org/10.1109/WBL.2001.946594","url":null,"abstract":"Several batches of CVD diamonds obtained commercially from De Beers Company and produced at the Institute of Materials Research at Limburg University (Belgium) have been used in our study. CVD diamonds were investigated with respect to their TL properties Irradiated CVD diamonds feature glow curves in which a dominant peak with a maximum at about 240/spl deg/C can be used for dosimetry, with sensitivity (TL output per Gy) comparable to that of commercial LiF:Mg,Ti (TLD-100, MTS-N) CVD diamonds produced at Limburg University were investigated with respect to their electrical parameters. A special contact preparation technique was developed. Gold contacts were placed on opposite sides of the crystals. The crystals were encapsulated in a special holder. Current and charge were measured by a UNIDOS (PTW Freiburg) electrometer. The bias current of 0.8 mm thick crystals was less than 1 pA.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"05 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127137843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Pisarkiewicz, E. Schabowska-Osiowska, E. Kusior
The objective of this work was the investigation of CdS grown by CBD on commercial glass and glass covered by transparent conductive oxide (TCO) substrates. Both TCO and CdS are window layers influencing the photovoltaic response of the cell. CBD technology offers the possibility of the deposition of a thin uniform film with a minimal thickness on a rough substrate surface. CBD growth of CdS using uncoated glass substrates enabled optimization of deposition parameters, e.g. concentrations of CdSO/sub 4/, NH/sub 3/ and thiourea SC(NH/sub 2/), bath temperature and deposition time. Successively glass plates coated with TCO (SnO/sub 2/, ZnO) layers were used as substrates. Both as-grown and air-annealed samples were studied. Investigation of optical transmission in the range 350 - 2200 nm, using Perkin - Elmer Lambda 19 spectrophotometer enabled the evaluation of heat treatment and selected technological parameters on CdS and CdS/ TCO bilayer optical properties. SEM and AFM surface morphology investigations indicate that CdS films reproduce morphology and roughness of the polycrystalline TCO sublayer. That conformal growth and thickness uniformity of cadmium sulfide thin films deposited by CBD technique are presumably the main reasons of their superior quality as buffer layers in CIS solar cells.
{"title":"Cadmium sulfide thin films manufactured by chemical bath deposition method","authors":"T. Pisarkiewicz, E. Schabowska-Osiowska, E. Kusior","doi":"10.1109/WBL.2001.946565","DOIUrl":"https://doi.org/10.1109/WBL.2001.946565","url":null,"abstract":"The objective of this work was the investigation of CdS grown by CBD on commercial glass and glass covered by transparent conductive oxide (TCO) substrates. Both TCO and CdS are window layers influencing the photovoltaic response of the cell. CBD technology offers the possibility of the deposition of a thin uniform film with a minimal thickness on a rough substrate surface. CBD growth of CdS using uncoated glass substrates enabled optimization of deposition parameters, e.g. concentrations of CdSO/sub 4/, NH/sub 3/ and thiourea SC(NH/sub 2/), bath temperature and deposition time. Successively glass plates coated with TCO (SnO/sub 2/, ZnO) layers were used as substrates. Both as-grown and air-annealed samples were studied. Investigation of optical transmission in the range 350 - 2200 nm, using Perkin - Elmer Lambda 19 spectrophotometer enabled the evaluation of heat treatment and selected technological parameters on CdS and CdS/ TCO bilayer optical properties. SEM and AFM surface morphology investigations indicate that CdS films reproduce morphology and roughness of the polycrystalline TCO sublayer. That conformal growth and thickness uniformity of cadmium sulfide thin films deposited by CBD technique are presumably the main reasons of their superior quality as buffer layers in CIS solar cells.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126999188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Natural diamonds with nitrogen defects at a concentration of about 10/sup 20/ cm/sup -3/ were investigated after irradiation by neutrons at a temperature of 330-340 K at a dose of 10/sup 19/ cm/sup -2/. Detailed thermal perturbations in the 1200-1800 cm/sup -1/ region were investigated by isochronal annealing with 10 min and 50 K steps. The upper temperature limit was 850 K because of oxidation onset. The spectra were rexamined after each annealing step. Immediately after irradiation the crystals were absolutely black, making it impossible to register or determine the GR1 centers concentrations. The first lines to appear were at 1530 and 1370 cm/sup -1/.
{"title":"FTIR spectroscopy of annealing processes in neutron irradiated diamonds","authors":"V. Mironov","doi":"10.1109/WBL.2001.946572","DOIUrl":"https://doi.org/10.1109/WBL.2001.946572","url":null,"abstract":"Natural diamonds with nitrogen defects at a concentration of about 10/sup 20/ cm/sup -3/ were investigated after irradiation by neutrons at a temperature of 330-340 K at a dose of 10/sup 19/ cm/sup -2/. Detailed thermal perturbations in the 1200-1800 cm/sup -1/ region were investigated by isochronal annealing with 10 min and 50 K steps. The upper temperature limit was 850 K because of oxidation onset. The spectra were rexamined after each annealing step. Immediately after irradiation the crystals were absolutely black, making it impossible to register or determine the GR1 centers concentrations. The first lines to appear were at 1530 and 1370 cm/sup -1/.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"36 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116638379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silicon carbide is a wide band gap semiconductor material. Although it has been known for several years, investigators continue to examine it in fundamental as well as application terms. SiC is used in devices operated under high-power, high temperature and high radiation conditions. A typical application of this material is its use as a substrate material in modern opto-electronic devices. The foundation of the SiC structure is a tetrehedral coordination of the atoms of both the elements that form it. The principal phases are: /spl alpha/-SiC (blende structure), and /spl beta/-SiC (wurtzite structure). In addition to these two phases, about 200 phases of SiC have been identified. The paper reports on the studies on the synthesis of SiC layers using the IPD method with the plasma reactants being delivered in various manners. It has been found that the product of the synthesis is a composite material built of a DLC matrix and SiC single crystals of the /spl alpha/-SiC 51R type, with grain sizes of about 100nm. Depending on the silicon dosing method (solid state source, TMS), the silicon content in the layer material ranged from 2 to 13%.
{"title":"SiC/DLC composite layers synthesised by the IPD method","authors":"M. Elert, K. Zdunek","doi":"10.1109/WBL.2001.946560","DOIUrl":"https://doi.org/10.1109/WBL.2001.946560","url":null,"abstract":"Silicon carbide is a wide band gap semiconductor material. Although it has been known for several years, investigators continue to examine it in fundamental as well as application terms. SiC is used in devices operated under high-power, high temperature and high radiation conditions. A typical application of this material is its use as a substrate material in modern opto-electronic devices. The foundation of the SiC structure is a tetrehedral coordination of the atoms of both the elements that form it. The principal phases are: /spl alpha/-SiC (blende structure), and /spl beta/-SiC (wurtzite structure). In addition to these two phases, about 200 phases of SiC have been identified. The paper reports on the studies on the synthesis of SiC layers using the IPD method with the plasma reactants being delivered in various manners. It has been found that the product of the synthesis is a composite material built of a DLC matrix and SiC single crystals of the /spl alpha/-SiC 51R type, with grain sizes of about 100nm. Depending on the silicon dosing method (solid state source, TMS), the silicon content in the layer material ranged from 2 to 13%.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124948457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors discuss the role of plasma processing in standard Si vs. wide bandgap materials technology. They consider the specific problems of plasma processing and their consequences in wide band gap semiconductor technology.
{"title":"Plasma processes for formation of electronic structures with wide bandgap material layers","authors":"A. Jakubowski, R. B. Beck, J. Szmidt, A. Werbowy","doi":"10.1109/WBL.2001.946547","DOIUrl":"https://doi.org/10.1109/WBL.2001.946547","url":null,"abstract":"The authors discuss the role of plasma processing in standard Si vs. wide bandgap materials technology. They consider the specific problems of plasma processing and their consequences in wide band gap semiconductor technology.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121158879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A direct growth of CVD diamond components in order to avoid (or minimize) further surface treatment is considered. This transfer molding technique is based on diamond growth on a patterned substrate, the replica of those patterns being formed on the nucleation side of the diamond film. If the diamond nucleation density is high enough to provide the conformal coating of the microstructured substrate surface the exact replica of the original structure after removal of the substrate can be produced.
{"title":"Net-shape diamond growth: applications in optics and electronics","authors":"V. Ralchenko","doi":"10.1109/WBL.2001.946556","DOIUrl":"https://doi.org/10.1109/WBL.2001.946556","url":null,"abstract":"A direct growth of CVD diamond components in order to avoid (or minimize) further surface treatment is considered. This transfer molding technique is based on diamond growth on a patterned substrate, the replica of those patterns being formed on the nucleation side of the diamond film. If the diamond nucleation density is high enough to provide the conformal coating of the microstructured substrate surface the exact replica of the original structure after removal of the substrate can be produced.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130638282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Since the pioneering work of Esaki and Tsu, superlattice (SL) systems have been intensively studied. There are two main difficulties in the technology of crystalline superlattices. One consists in a necessity of using expensive and hazardous deposition processes such as MBE. The second difficulty deals with problem of lattice mismatch between different materials used for the superlattice preparation. Both these difficulties gave rise to an alternative approach to the preparation of superlattice systems from amorphous semiconductors. In this case the problem of lattice mismatch disappears due to the very nature of amorphous state of matter. In this work we present technology used for the deposition of the superlattices based on amorphous hydrogenated carbon-germanium semiconductors (a-Ge/sub x/C/sub y/:H) using plasma decomposition of an organogermanium compound. It has been shown in our previous papers that the optical gap E/sub opt/ (defined by the Tauc law) of a-Ge/sub x/C/sub y/:H materials strongly depend on RF power input into glow discharge. It is obvious then that by application of an alternating power profile one should obtain a structure with periodically varied E/sub opt/. The time-power profile suitable to fulfill this condition was proposed and superlattice structures were deposited in a typical parallel-plate 13.56 MHz glow discharge deposition system. Variable angle-of-incidence spectroscopic ellipsometry (VASE) was used to study both topology and optical properties of the samples. The results of VASE measurements not only confirmed a layered structure of the SL systems but revealed a blue shift effect as well - a phenomenon which can be attributed to quantum confinement of charge carriers in superlattices.
{"title":"Amorphous superlattice structures with carbon as a wide bandgap component","authors":"R. Mazurczyk, M. Gazicki","doi":"10.1109/WBL.2001.946571","DOIUrl":"https://doi.org/10.1109/WBL.2001.946571","url":null,"abstract":"Since the pioneering work of Esaki and Tsu, superlattice (SL) systems have been intensively studied. There are two main difficulties in the technology of crystalline superlattices. One consists in a necessity of using expensive and hazardous deposition processes such as MBE. The second difficulty deals with problem of lattice mismatch between different materials used for the superlattice preparation. Both these difficulties gave rise to an alternative approach to the preparation of superlattice systems from amorphous semiconductors. In this case the problem of lattice mismatch disappears due to the very nature of amorphous state of matter. In this work we present technology used for the deposition of the superlattices based on amorphous hydrogenated carbon-germanium semiconductors (a-Ge/sub x/C/sub y/:H) using plasma decomposition of an organogermanium compound. It has been shown in our previous papers that the optical gap E/sub opt/ (defined by the Tauc law) of a-Ge/sub x/C/sub y/:H materials strongly depend on RF power input into glow discharge. It is obvious then that by application of an alternating power profile one should obtain a structure with periodically varied E/sub opt/. The time-power profile suitable to fulfill this condition was proposed and superlattice structures were deposited in a typical parallel-plate 13.56 MHz glow discharge deposition system. Variable angle-of-incidence spectroscopic ellipsometry (VASE) was used to study both topology and optical properties of the samples. The results of VASE measurements not only confirmed a layered structure of the SL systems but revealed a blue shift effect as well - a phenomenon which can be attributed to quantum confinement of charge carriers in superlattices.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123881456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).
{"title":"The study of thermal oxidation of SiC surface","authors":"M.T.H. Aung, J. Szmidt, M. Bakowski","doi":"10.1109/WBL.2001.946590","DOIUrl":"https://doi.org/10.1109/WBL.2001.946590","url":null,"abstract":"The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128646178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently the ternary compound CsPbCl/sub 3/ produced by co-evaporating CsCl and PbCl/sub 2/ has attracted much interest for its interesting optical characteristics. Indeed, aggregates with dimensions of about 10 nm are produced in the material as evidenced by luminescence spectroscopy and X-ray diffraction. Identification of the aggregates is based on a similarity of the observed emission properties with those of the bulk material. CsPbCl/sub 3/ is a wide-gap semiconductor with direct band-to-band transitions. The phase diagram of the CsCl-PbCl/sub 2/ system reveals the existence of complex ternary CsPbCl/sub 3/ (phase III semiconductor) and Cs/sub 4/PbCl/sub 6/ (phase VI, insulator) compounds. Varying the deposition rate the phase III is deposited together with the insulating phase VI. The crucible temperatures have also been optimized to control the deposition rate in order to achieve the ternary phase III only. The aim of this paper is to report on the preparation, optical and electrical characteristics of bulk and vacuum evaporated ternary compounds. To our knowledge this is the first time that the electrical behaviour in dark and in light is reported for these compounds. The correlation of the aggregate dimensions with the exciton absorption will be also introduced and discussed. X-ray diffraction spectroscopy is used as an independent evidence for aggregated phase creation. Samples used for this study have been grown by vacuum evaporation starting from Bridgman crystal chips of CsPbCl/sub 3/ or by co-evaporation of CsCl and PbCl/sub 2/ purified powders onto 7059 Coming glass substrates.
{"title":"Nanocrystalline CsPbCl/sub 3/: grain boundary transport properties","authors":"G. Conte, F. Somma, M. Nikl","doi":"10.1109/WBL.2001.946568","DOIUrl":"https://doi.org/10.1109/WBL.2001.946568","url":null,"abstract":"Recently the ternary compound CsPbCl/sub 3/ produced by co-evaporating CsCl and PbCl/sub 2/ has attracted much interest for its interesting optical characteristics. Indeed, aggregates with dimensions of about 10 nm are produced in the material as evidenced by luminescence spectroscopy and X-ray diffraction. Identification of the aggregates is based on a similarity of the observed emission properties with those of the bulk material. CsPbCl/sub 3/ is a wide-gap semiconductor with direct band-to-band transitions. The phase diagram of the CsCl-PbCl/sub 2/ system reveals the existence of complex ternary CsPbCl/sub 3/ (phase III semiconductor) and Cs/sub 4/PbCl/sub 6/ (phase VI, insulator) compounds. Varying the deposition rate the phase III is deposited together with the insulating phase VI. The crucible temperatures have also been optimized to control the deposition rate in order to achieve the ternary phase III only. The aim of this paper is to report on the preparation, optical and electrical characteristics of bulk and vacuum evaporated ternary compounds. To our knowledge this is the first time that the electrical behaviour in dark and in light is reported for these compounds. The correlation of the aggregate dimensions with the exciton absorption will be also introduced and discussed. X-ray diffraction spectroscopy is used as an independent evidence for aggregated phase creation. Samples used for this study have been grown by vacuum evaporation starting from Bridgman crystal chips of CsPbCl/sub 3/ or by co-evaporation of CsCl and PbCl/sub 2/ purified powders onto 7059 Coming glass substrates.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124053431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors propose AlN dielectric layer as a mirror coating for AlGaAs SQW-SCH laser diodes. As a semitransparent (low reflective - LR) coating they use a single AlN layer, and as a high reflective coating (HR) they use six pairs of AlN-Si layers. The measured reflection coefficients for LR and HR coatings and optical output power characteristics for coated and uncoated mirrors are presented. The optical output power of diodes with coated mirrors is two times higher than the optical power of uncoated diodes.
{"title":"AlN for mirror passivation of high power AlGaAs single quantum well separate confinement heterostructure lasers","authors":"A. Jagoda, L. Dobrzański, M. Możdżonek, S. Wróbel","doi":"10.1109/WBL.2001.946596","DOIUrl":"https://doi.org/10.1109/WBL.2001.946596","url":null,"abstract":"The authors propose AlN dielectric layer as a mirror coating for AlGaAs SQW-SCH laser diodes. As a semitransparent (low reflective - LR) coating they use a single AlN layer, and as a high reflective coating (HR) they use six pairs of AlN-Si layers. The measured reflection coefficients for LR and HR coatings and optical output power characteristics for coated and uncoated mirrors are presented. The optical output power of diodes with coated mirrors is two times higher than the optical power of uncoated diodes.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132496133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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