Sai-na Wang, Wenqing Zhu, Xue Chen, F. Xu, Hong Xu, Xiao-Wen Zhang, Xifeng Li, Xueyin Jiang, Zhilin Zhang
A top-emitting organic light-emitting device (TOLED) with an architecture of Ag/Wo3/4,4'-bis[N -(1-naphthyl-1)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline)aluminium(Alq3)/LiF/Al/semitransparent Ag/Capping layer 20~40nm WO3 as capping layer has been investigated and WO3 was demonstrated to be an effective capping layer and improve the luminance by a factor of 1.7 between the maximum and minimum transmittance of top contact. In this paper, the thicknesses of organic layers are calculated based on Fabry-Perot cavity theory. And with optimized, the top -emitting organic devices with single-mode resonance have a good ability such as a brightness of 40920cd/m2 at the current density of 600ma/cm2 and a maximum luminous efficiency of 7.32cd/A at 9145cd/m2.
{"title":"A green top-emitting organic light-emitting device with single-mode resonance and improved performance by using WO3 capping layer","authors":"Sai-na Wang, Wenqing Zhu, Xue Chen, F. Xu, Hong Xu, Xiao-Wen Zhang, Xifeng Li, Xueyin Jiang, Zhilin Zhang","doi":"10.1117/12.888233","DOIUrl":"https://doi.org/10.1117/12.888233","url":null,"abstract":"A top-emitting organic light-emitting device (TOLED) with an architecture of Ag/Wo3/4,4'-bis[N -(1-naphthyl-1)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline)aluminium(Alq3)/LiF/Al/semitransparent Ag/Capping layer 20~40nm WO3 as capping layer has been investigated and WO3 was demonstrated to be an effective capping layer and improve the luminance by a factor of 1.7 between the maximum and minimum transmittance of top contact. In this paper, the thicknesses of organic layers are calculated based on Fabry-Perot cavity theory. And with optimized, the top -emitting organic devices with single-mode resonance have a good ability such as a brightness of 40920cd/m2 at the current density of 600ma/cm2 and a maximum luminous efficiency of 7.32cd/A at 9145cd/m2.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124515326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Bu, Z. Liu, J. Dutson, M. Thwaites, N. Chen, Z. Cai
This paper describes a novel remote plasma sputtering technique for depositing optical thin films. This technology is based on generating intensive plasma remotely from the target and then magnetically steering the plasma to the target to realize the sputter deposition. It overcomes several of inherent limitations in conventional sputtering techniques and realizes the fully uniform erosion over the surface of the target and less target poison. This allows a uniform reaction in the plasma phase when performing reactive sputtering, leading to the formation and deposition of material with a uniform stoichiometry and gives pseudo-independence of target current and voltage. This pseudo-independence offers a great deal of flexibility with regard to the control of growth conditions and film properties, the benefits include control of stress, very low deposition rates for ultra thin films. By remote reactive sputtering, dense metal-oxide optical thin films (SiO2, Ta2O5, Nb2O5) with a high deposition rate, excellent optical properties are achieved. High process stability shows an excellent time terminating accuracy for multilayer coating thickness control. Typically, thin film thickness control to <±1% is accomplished simply using time. The multilayer coating, including anti-reflection, dichroic mirror and 2μm laser mirrors are presented.
{"title":"A novel remote plasma sputtering technique for depositing high-performance optical thin films","authors":"Y. Bu, Z. Liu, J. Dutson, M. Thwaites, N. Chen, Z. Cai","doi":"10.1117/12.888188","DOIUrl":"https://doi.org/10.1117/12.888188","url":null,"abstract":"This paper describes a novel remote plasma sputtering technique for depositing optical thin films. This technology is based on generating intensive plasma remotely from the target and then magnetically steering the plasma to the target to realize the sputter deposition. It overcomes several of inherent limitations in conventional sputtering techniques and realizes the fully uniform erosion over the surface of the target and less target poison. This allows a uniform reaction in the plasma phase when performing reactive sputtering, leading to the formation and deposition of material with a uniform stoichiometry and gives pseudo-independence of target current and voltage. This pseudo-independence offers a great deal of flexibility with regard to the control of growth conditions and film properties, the benefits include control of stress, very low deposition rates for ultra thin films. By remote reactive sputtering, dense metal-oxide optical thin films (SiO2, Ta2O5, Nb2O5) with a high deposition rate, excellent optical properties are achieved. High process stability shows an excellent time terminating accuracy for multilayer coating thickness control. Typically, thin film thickness control to <±1% is accomplished simply using time. The multilayer coating, including anti-reflection, dichroic mirror and 2μm laser mirrors are presented.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123526801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dalin Yao, M. Gu, Xiaolin Liu, Shi-ming Huang, Bo Liu, Chen Ni
Among scintillators, columnar CsI screens are used in applications detecting charged particles, UV light or X-ray for high energy physics and medical radiography. CsI scintillator can be grown in special microcolumnar form that preserves spatial resolution in thick coatings. We report on the columnar CsI films fabricated directly on optical-fiber plate by traditional vacuum deposition method. There morphology and structure were examined by scanning electron microscopy and X-ray diffraction. Properties of films depend on deposit condition are discussed.
{"title":"Morphology and structure properties of columnar CsI films on optical fiber plate","authors":"Dalin Yao, M. Gu, Xiaolin Liu, Shi-ming Huang, Bo Liu, Chen Ni","doi":"10.1117/12.888348","DOIUrl":"https://doi.org/10.1117/12.888348","url":null,"abstract":"Among scintillators, columnar CsI screens are used in applications detecting charged particles, UV light or X-ray for high energy physics and medical radiography. CsI scintillator can be grown in special microcolumnar form that preserves spatial resolution in thick coatings. We report on the columnar CsI films fabricated directly on optical-fiber plate by traditional vacuum deposition method. There morphology and structure were examined by scanning electron microscopy and X-ray diffraction. Properties of films depend on deposit condition are discussed.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121664884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The phase transitions and the temperature dependent electronic properties of Bi3.25La0.75Ti3O12 (BLT) film have been studied by transmittance spectra from 80 to 480 K. Anomalies of the optical constants are observed at 160 K and 300 K, which can be ascribed to the phase transitions. The optical properties of SrBi2-xNdxNb2O9 (SBNN) ceramics with the Nd concentrations from 0 to 0.2 have been investigated by Raman scattering spectra and spectroscopic ellipsometry. It can be found that the lattice vibrations slightly depend on the Nd concentrations. Moreover, the optical band gap linearly increases with the Nd concentrations due to charge compensation by the Nd doping.
{"title":"Electronic and optical properties of Bi3.25La0.75Ti3O12 and SrBi2-xNdxNb2O9 perovskite-type ferroelectric materials","authors":"Z. Hu, J. Chu","doi":"10.1117/12.888426","DOIUrl":"https://doi.org/10.1117/12.888426","url":null,"abstract":"The phase transitions and the temperature dependent electronic properties of Bi3.25La0.75Ti3O12 (BLT) film have been studied by transmittance spectra from 80 to 480 K. Anomalies of the optical constants are observed at 160 K and 300 K, which can be ascribed to the phase transitions. The optical properties of SrBi2-xNdxNb2O9 (SBNN) ceramics with the Nd concentrations from 0 to 0.2 have been investigated by Raman scattering spectra and spectroscopic ellipsometry. It can be found that the lattice vibrations slightly depend on the Nd concentrations. Moreover, the optical band gap linearly increases with the Nd concentrations due to charge compensation by the Nd doping.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121107437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cu(In,Ga)Se2 (CIGS) thin films have been prepared by radio frequency (RF) magnetron sputtering from a CuIn0.8Ga0.2Se2 target. The effects of in-situ annealing in Ar atmosphere on phase structure, composition and surface morphology of the films have been investigated by X-ray diffraction (XRD), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM) and Raman spectroscopy. XRD patterns show that both as-deposited and annealed films have a chalcopyrite structure with strong (112) preferred orientation. The annealed films display a higher degree of crystallinity and smoother surface, while there is little difference in grain size for films annealed at temperatures ranging from 300°C to 500°C. Results of EDAX reveal that the films are near to stoichiometry. Raman spectrum of the films annealed at 300°C shows only the CIGS A1 mode peak indicating the formation of single-phase chalcopyrite with enhanced crystalline ordering. The films annealed at higher temperatures exhibit a non-chalcopyrite mode at around 260 cm-1 assigned to Cu2-xSe secondary phase which is detrimental to CIGS solar cells.
{"title":"Effects of annealing on the structural properties of Cu(In,Ga)Se2 thin films prepared by RF sputtering","authors":"Gang Shi, J. Chu","doi":"10.1117/12.888168","DOIUrl":"https://doi.org/10.1117/12.888168","url":null,"abstract":"Cu(In,Ga)Se2 (CIGS) thin films have been prepared by radio frequency (RF) magnetron sputtering from a CuIn0.8Ga0.2Se2 target. The effects of in-situ annealing in Ar atmosphere on phase structure, composition and surface morphology of the films have been investigated by X-ray diffraction (XRD), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM) and Raman spectroscopy. XRD patterns show that both as-deposited and annealed films have a chalcopyrite structure with strong (112) preferred orientation. The annealed films display a higher degree of crystallinity and smoother surface, while there is little difference in grain size for films annealed at temperatures ranging from 300°C to 500°C. Results of EDAX reveal that the films are near to stoichiometry. Raman spectrum of the films annealed at 300°C shows only the CIGS A1 mode peak indicating the formation of single-phase chalcopyrite with enhanced crystalline ordering. The films annealed at higher temperatures exhibit a non-chalcopyrite mode at around 260 cm-1 assigned to Cu2-xSe secondary phase which is detrimental to CIGS solar cells.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120959801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bai-sen Zhang, Mianjun Ma, Y. Xiong, Tao Chen, D. Wang, Chen Li, Miao Yang
The influence of the rugate filter index profile function parameters, such as refractive index amplitude, film thickness and reference wavelength on the minus filter transmission spectrum, were investigated in this paper. The results show that the rejection bandwidth was affected by the refractive index amplitude, the depth of attenuation region was influenced by the film thickness, and the position of cut-off wavelength was determined by the reference wavelength. The method using the Rugate theory to design minus filters was presented, and several kinds of minus filters were designed using the method.
{"title":"Study of designing minus filters based on rugate theory","authors":"Bai-sen Zhang, Mianjun Ma, Y. Xiong, Tao Chen, D. Wang, Chen Li, Miao Yang","doi":"10.1117/12.888187","DOIUrl":"https://doi.org/10.1117/12.888187","url":null,"abstract":"The influence of the rugate filter index profile function parameters, such as refractive index amplitude, film thickness and reference wavelength on the minus filter transmission spectrum, were investigated in this paper. The results show that the rejection bandwidth was affected by the refractive index amplitude, the depth of attenuation region was influenced by the film thickness, and the position of cut-off wavelength was determined by the reference wavelength. The method using the Rugate theory to design minus filters was presented, and several kinds of minus filters were designed using the method.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132048437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fe2O3-SiO2-CTAB transparent nano-composite films were prepared by means of a two-step acid-catalyzed method and sol-gel process using surfactant cetyltrimethylammonium bromide (CTAB) as template and tetraethoxysilane (TEOS) as the starting material, iron nitrate Fe(NO3)3·9H2O as iron source material. Optical properties, structural and magnetic characteristics of the films were investigated by UV-visible spectra, FT-IR spectra and vibrating sample magnetometer (VSM). The transparency of the high temperature treated Fe2O3-SiO2-CTAB nano-composite films exceeds the glass substrate. It is also found that the saturation magnetization (Ms) of the films increases with the treating temperature. The magnetization measurements reveal that Fe2O3-SiO2-CTAB nano-composite films display normal ferromagnetic behaviors. It is also shown that the CTAB plays a key role in the optical and magnetic properties of Fe2O3-SiO2-CTAB composite films.
{"title":"Preparation and investigation of Fe2O3-SiO2-CTAB transparent nano-composite films","authors":"Lin Li, Lanfang Yao, Shuo Wang, Ruiqing Xu, Linlin Tian, X. Fang","doi":"10.1117/12.888177","DOIUrl":"https://doi.org/10.1117/12.888177","url":null,"abstract":"Fe2O3-SiO2-CTAB transparent nano-composite films were prepared by means of a two-step acid-catalyzed method and sol-gel process using surfactant cetyltrimethylammonium bromide (CTAB) as template and tetraethoxysilane (TEOS) as the starting material, iron nitrate Fe(NO3)3·9H2O as iron source material. Optical properties, structural and magnetic characteristics of the films were investigated by UV-visible spectra, FT-IR spectra and vibrating sample magnetometer (VSM). The transparency of the high temperature treated Fe2O3-SiO2-CTAB nano-composite films exceeds the glass substrate. It is also found that the saturation magnetization (Ms) of the films increases with the treating temperature. The magnetization measurements reveal that Fe2O3-SiO2-CTAB nano-composite films display normal ferromagnetic behaviors. It is also shown that the CTAB plays a key role in the optical and magnetic properties of Fe2O3-SiO2-CTAB composite films.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132933559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Li Wang, Guiqiang Du, Bingyuan Zhang, Changzheng Wang
Structures containing metamaterials are considered. We mainly investigate the influence of spacer layer's thickness and metamaterials's damping term to the dips appearing in the attenuated total reflection (ATR) spectrum. It is found that the layer thickness and material's damping term have great impact on the surface resonance modes and the dips which appear in ATR spectrum. The results show that in order to observe the dips by using ATR, for the metamaterials, we should select proper values of damping term and spacer's thickness.
{"title":"Surface plasmon polaritons of multi-layered structures containing metamaterial","authors":"Li Wang, Guiqiang Du, Bingyuan Zhang, Changzheng Wang","doi":"10.1117/12.888180","DOIUrl":"https://doi.org/10.1117/12.888180","url":null,"abstract":"Structures containing metamaterials are considered. We mainly investigate the influence of spacer layer's thickness and metamaterials's damping term to the dips appearing in the attenuated total reflection (ATR) spectrum. It is found that the layer thickness and material's damping term have great impact on the surface resonance modes and the dips which appear in ATR spectrum. The results show that in order to observe the dips by using ATR, for the metamaterials, we should select proper values of damping term and spacer's thickness.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132520814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jie Zhou, W. Shi, Guang-pu Wei, Juan Qin, Linjun Wang, Jieli Chen
Mercuric Iodide (HgI2) is a promising semiconductor material for nuclear radiation detectors working at room temperature, especially for x-ray and γ-ray detectors. The influences of different growth temperatures on qualities of thin films were studied. The structure and optical properties of thin films were characterized by x-ray diffraction spectroscopy, metallography and UV-VIS spectrophotometer. Our results can be summarized as following: XRD analysis shows crystallinity of HgI2 in thin films depends mainly on the growth temperatures, that is, the XRD reflections become stronger with the decrease of the growth temperature. The optimum growth temperature for preparation of polycrystalline HgI2 thin film utilizing vertical deposition technique of chemistry is about 20°C. The corresponding thin film has a good uniformity with thickness of about 800 nm, perpendicular to the substrate along <001> direction. Based on its optical performance testing, our calculations found that HgI2 thin film grown at 20°C has a wide energy band gap of about 2.26 eV.
{"title":"Preparation and optical properties of polycrystalline HgI2 thin films utilizing vertical deposition technique of chemistry","authors":"Jie Zhou, W. Shi, Guang-pu Wei, Juan Qin, Linjun Wang, Jieli Chen","doi":"10.1117/12.888249","DOIUrl":"https://doi.org/10.1117/12.888249","url":null,"abstract":"Mercuric Iodide (HgI2) is a promising semiconductor material for nuclear radiation detectors working at room temperature, especially for x-ray and γ-ray detectors. The influences of different growth temperatures on qualities of thin films were studied. The structure and optical properties of thin films were characterized by x-ray diffraction spectroscopy, metallography and UV-VIS spectrophotometer. Our results can be summarized as following: XRD analysis shows crystallinity of HgI2 in thin films depends mainly on the growth temperatures, that is, the XRD reflections become stronger with the decrease of the growth temperature. The optimum growth temperature for preparation of polycrystalline HgI2 thin film utilizing vertical deposition technique of chemistry is about 20°C. The corresponding thin film has a good uniformity with thickness of about 800 nm, perpendicular to the substrate along <001> direction. Based on its optical performance testing, our calculations found that HgI2 thin film grown at 20°C has a wide energy band gap of about 2.26 eV.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130103567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Larruquert, M. Vidal-Dasilva, Sergio García-Cortés, L. R. Rodríguez-de Marcos, M. Fernández-Perea, J. Aznárez, J. A. Méndez
The strong absorption of materials in the extreme ultraviolet (EUV) above ~50 nm has precluded the development of efficient coatings. The development of novel coatings with improved EUV performance is presented. An extensive research was performed on the search and characterization of new materials with low absorption or high reflectance. Lanthanide series was found to be a source of materials with relatively low absorption in this range, where most materials in nature present a strong absorption. Other materials, such as SiO and B, have been found to have interesting properties for applications on EUV coatings. As a result, novel multilayers based on Yb, Al, and SiO have been developed with narrowband performance in the 50-92 nm range. In some cases, the difficulty of developing narrowband coatings in the EUV can be overcome by designing multilayers that address specific purposes, such as maximizing and/or minimizing the reflectance at two or more wavelengths or bands. In this direction, we are working towards the development of coatings that combine a relatively high reflectance in a desired EUV band with a low reflectance in another band, for applications in which the presence of the latter radiation may mask a weak EUV radiation source.
{"title":"Multilayer coatings for optics in the extreme ultraviolet","authors":"J. Larruquert, M. Vidal-Dasilva, Sergio García-Cortés, L. R. Rodríguez-de Marcos, M. Fernández-Perea, J. Aznárez, J. A. Méndez","doi":"10.1117/12.888463","DOIUrl":"https://doi.org/10.1117/12.888463","url":null,"abstract":"The strong absorption of materials in the extreme ultraviolet (EUV) above ~50 nm has precluded the development of efficient coatings. The development of novel coatings with improved EUV performance is presented. An extensive research was performed on the search and characterization of new materials with low absorption or high reflectance. Lanthanide series was found to be a source of materials with relatively low absorption in this range, where most materials in nature present a strong absorption. Other materials, such as SiO and B, have been found to have interesting properties for applications on EUV coatings. As a result, novel multilayers based on Yb, Al, and SiO have been developed with narrowband performance in the 50-92 nm range. In some cases, the difficulty of developing narrowband coatings in the EUV can be overcome by designing multilayers that address specific purposes, such as maximizing and/or minimizing the reflectance at two or more wavelengths or bands. In this direction, we are working towards the development of coatings that combine a relatively high reflectance in a desired EUV band with a low reflectance in another band, for applications in which the presence of the latter radiation may mask a weak EUV radiation source.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134089663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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