Leibo Zhang, Y. Hou, Zhiming Huang, Wei Zhou, Yanqing Gao
Transition metal oxide (TMO) has been extensively focused in recent years. In this paper, we investigate the optical properties of a typical TMO material of Ni(1-x)Mn(2+x)O4 (x=0-1) thin films. Different compositions of x=0, 0.1, 0.2, 0.3 thin films are grown on Pt/Ti/SiO2/Si substrates by chemical solution deposition method under annealing temperature of 750°C. X-ray diffraction patterns indicate that Ni(1-x)Mn(2+x)O4 thin films are polycrystalline with spinel structure. The optical properties are investigated using spectroscopic ellipsometry at room temperature in the wavelength range of 400-1700nm. By fitting the measured ellipsometric data with a three-phase model (air/sample/Pt), the optical constants of thin films are determined. The refractive index and extinction coefficient don't show apparent variation with different composition. The obtained optical constants are very significant in the potential applications of optoelectronic devices.
{"title":"Optical properties of Ni(1-x)Mn(2+x)O4 films studied by spectroscopic ellipsometry","authors":"Leibo Zhang, Y. Hou, Zhiming Huang, Wei Zhou, Yanqing Gao","doi":"10.1117/12.888207","DOIUrl":"https://doi.org/10.1117/12.888207","url":null,"abstract":"Transition metal oxide (TMO) has been extensively focused in recent years. In this paper, we investigate the optical properties of a typical TMO material of Ni(1-x)Mn(2+x)O4 (x=0-1) thin films. Different compositions of x=0, 0.1, 0.2, 0.3 thin films are grown on Pt/Ti/SiO2/Si substrates by chemical solution deposition method under annealing temperature of 750°C. X-ray diffraction patterns indicate that Ni(1-x)Mn(2+x)O4 thin films are polycrystalline with spinel structure. The optical properties are investigated using spectroscopic ellipsometry at room temperature in the wavelength range of 400-1700nm. By fitting the measured ellipsometric data with a three-phase model (air/sample/Pt), the optical constants of thin films are determined. The refractive index and extinction coefficient don't show apparent variation with different composition. The obtained optical constants are very significant in the potential applications of optoelectronic devices.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127970448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silicon nitride (SiNx) thin films were deposited by DC pulse reactive magnetron sputtering at ambient temperature. These films were characterized by spectroscopic ellipsometry(SE), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). It is found that among several regulable parameters, pulse frequency, target power density, reactive gas flow rate (or working pressure) could significantly influence the optical properties and compositions of SiNx thin film more than the reverse time. The rotation of substrate which used to improve the uniformity in the radial direction also can be utilized to alter the in-depth composition distribution of the films. SiNx film with high refractive index (~2.00) and ultra low extinction coefficient (<10-3) were obtained on the optimal deposition conditions. It could be concluded that, compared to many disadvantages existing in various chemical vapour deposition (CVD) or radio frequency (RF) magnetron sputtering, DC pulse reactive magnetron sputtering is an alternative method to produce SiNxfilms for the increasing application especially as the moisture barriers for flexible electronics and optoelectronics.
{"title":"Silicon nitride thin films deposited by DC pulse reactive magnetron sputtering","authors":"Xiaofeng Zhang, Pei-Gang Wen, Yue Yan","doi":"10.1117/12.888164","DOIUrl":"https://doi.org/10.1117/12.888164","url":null,"abstract":"Silicon nitride (SiNx) thin films were deposited by DC pulse reactive magnetron sputtering at ambient temperature. These films were characterized by spectroscopic ellipsometry(SE), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). It is found that among several regulable parameters, pulse frequency, target power density, reactive gas flow rate (or working pressure) could significantly influence the optical properties and compositions of SiNx thin film more than the reverse time. The rotation of substrate which used to improve the uniformity in the radial direction also can be utilized to alter the in-depth composition distribution of the films. SiNx film with high refractive index (~2.00) and ultra low extinction coefficient (<10-3) were obtained on the optimal deposition conditions. It could be concluded that, compared to many disadvantages existing in various chemical vapour deposition (CVD) or radio frequency (RF) magnetron sputtering, DC pulse reactive magnetron sputtering is an alternative method to produce SiNxfilms for the increasing application especially as the moisture barriers for flexible electronics and optoelectronics.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"04 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129175457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jian Wang, Siqing Shen, Jianjun Xie, Ying Shi, F. Ai
Tb3+-doped Lu3Al5O12(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb3+ characteristic emission bands.
{"title":"Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method","authors":"Jian Wang, Siqing Shen, Jianjun Xie, Ying Shi, F. Ai","doi":"10.1117/12.888433","DOIUrl":"https://doi.org/10.1117/12.888433","url":null,"abstract":"Tb3+-doped Lu3Al5O12(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb3+ characteristic emission bands.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123408173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this invited paper, we report the effect of different annealing environments on the changeable radiative recombination characteristics of Si quantum dots (QDs), which not only provides ways to identify the photoluminescence mechanism, but also realizes the possibility to control the origin of the luminescence. We also focus on the application of Si QDs in the third-generation solar cells, with the emphasis on growth of well-ordered Si QDs, on photoresponse control of Si QDs, and on approaches to reduce the lattice thermalization loss in Si QDs solar cells.
{"title":"Silicon quantum dots: photoluminescence controlling and solar cell application","authors":"W. Shen","doi":"10.1117/12.888167","DOIUrl":"https://doi.org/10.1117/12.888167","url":null,"abstract":"In this invited paper, we report the effect of different annealing environments on the changeable radiative recombination characteristics of Si quantum dots (QDs), which not only provides ways to identify the photoluminescence mechanism, but also realizes the possibility to control the origin of the luminescence. We also focus on the application of Si QDs in the third-generation solar cells, with the emphasis on growth of well-ordered Si QDs, on photoresponse control of Si QDs, and on approaches to reduce the lattice thermalization loss in Si QDs solar cells.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122544770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhenhua Wang, Yonggang Wu, Zihuan Xia, N. Chen, Leijie Ling, Heyun Wu, G. Lv
In this paper, we present a new tunable orthogonal grating consisting of two weakly modulated subwavelength gratings perpendicularly to one another. Using the rigorous coupled-wave analysis (RCWA), we calculate and analyze the characteristics of guided-mode resonance on incident angle for TE/TM polarization. We demonstrate that a wide range tunability of such structure accomplished with only a nanoscale variation of the spacing between the gratings. For a normally incident wave of both TE and TM polarization, the structure turns out the same spectrum and resonance peaks. A gap of reflection peaks is found, and electric field distributions manifest that this gap is due to the interaction between the leaky modes of TE0-TE0, TM0-TM0 or TE0-TM0. We investigate the reflection efficiency of TE/TM polarization as a function of the wavelength with the angle of incidence as a parameter. As incident angle increases, the separation of the resonances increases also. At the same time, some specific wavelengths are maintained.
{"title":"Guided-mode resonance in tunable orthogonal grating","authors":"Zhenhua Wang, Yonggang Wu, Zihuan Xia, N. Chen, Leijie Ling, Heyun Wu, G. Lv","doi":"10.1117/12.887614","DOIUrl":"https://doi.org/10.1117/12.887614","url":null,"abstract":"In this paper, we present a new tunable orthogonal grating consisting of two weakly modulated subwavelength gratings perpendicularly to one another. Using the rigorous coupled-wave analysis (RCWA), we calculate and analyze the characteristics of guided-mode resonance on incident angle for TE/TM polarization. We demonstrate that a wide range tunability of such structure accomplished with only a nanoscale variation of the spacing between the gratings. For a normally incident wave of both TE and TM polarization, the structure turns out the same spectrum and resonance peaks. A gap of reflection peaks is found, and electric field distributions manifest that this gap is due to the interaction between the leaky modes of TE0-TE0, TM0-TM0 or TE0-TM0. We investigate the reflection efficiency of TE/TM polarization as a function of the wavelength with the angle of incidence as a parameter. As incident angle increases, the separation of the resonances increases also. At the same time, some specific wavelengths are maintained.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"81 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120909169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Delmotte, S. de Rossi, C. Bourassin-Bouchet, E. Meltchakov, A. Ziani, F. Choueikani, F. Bridou, A. Jérôme, F. Varnière
In this paper, we present a brief history of EUV multilayer mirrors and recent results achieved at Institut d'Optique in the fields of space science and ultra-fast pulses. Concerning space science, we present two solutions to improve reflectivity of EUV multilayer for solar imaging: three material multilayers and Al-based multilayers. Concerning attosecond pulses, we demonstrate the possibility to realize multilayer mirrors for an efficient transport of high harmonics on a broad energy band with high efficiency.
{"title":"EUV multilayer optics for space science and ultrafast science","authors":"F. Delmotte, S. de Rossi, C. Bourassin-Bouchet, E. Meltchakov, A. Ziani, F. Choueikani, F. Bridou, A. Jérôme, F. Varnière","doi":"10.1117/12.888199","DOIUrl":"https://doi.org/10.1117/12.888199","url":null,"abstract":"In this paper, we present a brief history of EUV multilayer mirrors and recent results achieved at Institut d'Optique in the fields of space science and ultra-fast pulses. Concerning space science, we present two solutions to improve reflectivity of EUV multilayer for solar imaging: three material multilayers and Al-based multilayers. Concerning attosecond pulses, we demonstrate the possibility to realize multilayer mirrors for an efficient transport of high harmonics on a broad energy band with high efficiency.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121728934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, G. Lv
The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.
{"title":"The influence of micron-sized nodules on the electric-field districution in thin-film polarizers","authors":"N. Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, G. Lv","doi":"10.1117/12.887565","DOIUrl":"https://doi.org/10.1117/12.887565","url":null,"abstract":"The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"284 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122726200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lingyun Shi, K. Tang, Jian Huang, Qinkai Zeng, Linjun Wang
Freestanding diamond (FSD) film with p-type hydrogen-terminated nucleation surface was prepared by microwave plasma chemical vapour deposition (MPCVD) method. The post-treatment (wet chemical etch and annealing process) on the property of diamond film was investigated. The preparation and characterization of hydrogen-terminated diamond film p-type channel metal-semiconductor field effect transistors (MESFETs) was studied. The device was also used for photodetector application. The results showed the potential of high switching speed and high sensitivity to ultraviolet (UV).
{"title":"Preparation of an optically activated field effect transistor based on diamond film","authors":"Lingyun Shi, K. Tang, Jian Huang, Qinkai Zeng, Linjun Wang","doi":"10.1117/12.888360","DOIUrl":"https://doi.org/10.1117/12.888360","url":null,"abstract":"Freestanding diamond (FSD) film with p-type hydrogen-terminated nucleation surface was prepared by microwave plasma chemical vapour deposition (MPCVD) method. The post-treatment (wet chemical etch and annealing process) on the property of diamond film was investigated. The preparation and characterization of hydrogen-terminated diamond film p-type channel metal-semiconductor field effect transistors (MESFETs) was studied. The device was also used for photodetector application. The results showed the potential of high switching speed and high sensitivity to ultraviolet (UV).","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127580081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiao-lei Zhang, Juan Qin, Zhenyi Chen, Min Zhang, Jirong Li, Wei-min Shi, Linjun Wang
In this paper we study chemical bath deposition of ZnS thin films on glass slides with two different kinds of systems, that is, hydrazine hydrate system (N2H4•H2O/NH3•H2O/SC(NH2)2/ZnSO4) and citric acid system (C6H8O7/NH3•H2O/ SC(NH2)2/ZnSO4) in aqueous solution. The properties of ZnS thin films are characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The optical band gap is calculated from transmission spectra. The results show that ZnS thin films in citric acid system have better crystallization, higher transmittance and much lesser white spots which might be colloidal particles sedimentation mixed with ZnS, indicating that ZnS thin films prepared using citric acid system being more suitable for the buffer layer of CIGS solar cells.
{"title":"Preparation and optical properties of chemical bath deposited ZnS thin films","authors":"Xiao-lei Zhang, Juan Qin, Zhenyi Chen, Min Zhang, Jirong Li, Wei-min Shi, Linjun Wang","doi":"10.1117/12.888336","DOIUrl":"https://doi.org/10.1117/12.888336","url":null,"abstract":"In this paper we study chemical bath deposition of ZnS thin films on glass slides with two different kinds of systems, that is, hydrazine hydrate system (N2H4•H2O/NH3•H2O/SC(NH2)2/ZnSO4) and citric acid system (C6H8O7/NH3•H2O/ SC(NH2)2/ZnSO4) in aqueous solution. The properties of ZnS thin films are characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The optical band gap is calculated from transmission spectra. The results show that ZnS thin films in citric acid system have better crystallization, higher transmittance and much lesser white spots which might be colloidal particles sedimentation mixed with ZnS, indicating that ZnS thin films prepared using citric acid system being more suitable for the buffer layer of CIGS solar cells.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115079943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuo Wang, Lanfang Yao, Lin Li, Ruiqing Xu, Linlin Tian, J. Kang
The TEOS-MTES-Al2O3-CTAB hydrophobic hard nano-composite films were prepared using tetraethoxysliane (TEOS) and aluminium isopropoxide Al(C3H7O)3 as precursors, keeping the molar ratio of TEOS, ethanol (EtOH), deionized water, dilute HCl and methyltriethoxysilane (MTES) at 1:3.8:1:5×10-5:0.8, and added AlOOH sol into TEOS-MTES sol, the Si/Al molar ratio (M) was 1:0.06. The last step, finally 1.5wt % cetyltrimethylammonium bromide (CTAB) was added in the nano-composite sol. The films were heated to different temperatures in the range 250°C~450°C for 2h. The prepared films were characterized by Atomic Force Microscopy (AFM), water contact angle measurements and QHQ pencil hardness tester. The results showed the surface roughness of the films ranging from 9.598 to 34.297 nm. The water contact angle as high as 120° and the hardness as high as 6H.
{"title":"Effect of heat treatment on the surface morphology and hydrophobic of TEOS-MTES-Al2O3-CTAB nanocomposite films","authors":"Shuo Wang, Lanfang Yao, Lin Li, Ruiqing Xu, Linlin Tian, J. Kang","doi":"10.1117/12.888161","DOIUrl":"https://doi.org/10.1117/12.888161","url":null,"abstract":"The TEOS-MTES-Al2O3-CTAB hydrophobic hard nano-composite films were prepared using tetraethoxysliane (TEOS) and aluminium isopropoxide Al(C3H7O)3 as precursors, keeping the molar ratio of TEOS, ethanol (EtOH), deionized water, dilute HCl and methyltriethoxysilane (MTES) at 1:3.8:1:5×10-5:0.8, and added AlOOH sol into TEOS-MTES sol, the Si/Al molar ratio (M) was 1:0.06. The last step, finally 1.5wt % cetyltrimethylammonium bromide (CTAB) was added in the nano-composite sol. The films were heated to different temperatures in the range 250°C~450°C for 2h. The prepared films were characterized by Atomic Force Microscopy (AFM), water contact angle measurements and QHQ pencil hardness tester. The results showed the surface roughness of the films ranging from 9.598 to 34.297 nm. The water contact angle as high as 120° and the hardness as high as 6H.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121776842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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