Detailed design for nanoparticle plasmons-enhanced solar cells is presented in this article. Optimal structure for the max enhancement from the nanoparticle arrays is investigated by varying the size, shape and period of the nanoparticle, and thickness of Si absorber. Tolerance of the nanoparticle arrays provides guidance for fabrication in practice. Contribution of front and back structure as well as the nanoparticle arrays to the photocurrent is analyzed respectively. After optimization short circuit current density attains 20mA/cm2 with a 185% enhancement compared to that of the 700nm thick Si.
{"title":"Optimized light trapping in thin film silicon solar cells by metal nanoparticle","authors":"Zihuan Xia, Yonggang Wu, Yingzhuang Ma, Leijie Ling, G. Lv, Heyun Wu","doi":"10.1117/12.887555","DOIUrl":"https://doi.org/10.1117/12.887555","url":null,"abstract":"Detailed design for nanoparticle plasmons-enhanced solar cells is presented in this article. Optimal structure for the max enhancement from the nanoparticle arrays is investigated by varying the size, shape and period of the nanoparticle, and thickness of Si absorber. Tolerance of the nanoparticle arrays provides guidance for fabrication in practice. Contribution of front and back structure as well as the nanoparticle arrays to the photocurrent is analyzed respectively. After optimization short circuit current density attains 20mA/cm2 with a 185% enhancement compared to that of the 700nm thick Si.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124008328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Benhua Pei, Yue Shen, W. Cheng, Feng Gu, Jian-cheng Zhang
A novel soluble poly(phenylethanone) derivative grafted with tetra-acyl-chlorich manganese phthalocyanine (TACMnPc) was synthesized via esterification and characterized by electronic absorption spectrum and fluorescence spectra. The derivative (PPE-MnPc) exhibits high solubility and excellent film-forming property. Electronic absorption spectrum of the polymer exhibits a Q-band peak positioned at about 736 nm, which is obviously red shifted compared with 2, 9, 16, 23-tetra-carboxyl manganese(II) phthalocyanine (TCMnPc). PPE-MnPc films were prepared by dip-coating technology. Photoconductivity of PPE-MnPc films was characterized by current-voltage measurement. At bias voltage of 20 V, photoconductivity of the film was 6.8×10-9 S and dark conductivity was 7.5 ×10-10 S. The electrical conductivity of PPE-MnPc films under irradiation was nine times higher than that in the dark, which indicated that PPE-MnPc had a good photovoltaic response.
{"title":"Preparation and photoelectric properties of poly(phenylethanone)- manganese phthalocyanine derivative for polymer photovoltaic cells","authors":"Benhua Pei, Yue Shen, W. Cheng, Feng Gu, Jian-cheng Zhang","doi":"10.1117/12.888205","DOIUrl":"https://doi.org/10.1117/12.888205","url":null,"abstract":"A novel soluble poly(phenylethanone) derivative grafted with tetra-acyl-chlorich manganese phthalocyanine (TACMnPc) was synthesized via esterification and characterized by electronic absorption spectrum and fluorescence spectra. The derivative (PPE-MnPc) exhibits high solubility and excellent film-forming property. Electronic absorption spectrum of the polymer exhibits a Q-band peak positioned at about 736 nm, which is obviously red shifted compared with 2, 9, 16, 23-tetra-carboxyl manganese(II) phthalocyanine (TCMnPc). PPE-MnPc films were prepared by dip-coating technology. Photoconductivity of PPE-MnPc films was characterized by current-voltage measurement. At bias voltage of 20 V, photoconductivity of the film was 6.8×10-9 S and dark conductivity was 7.5 ×10-10 S. The electrical conductivity of PPE-MnPc films under irradiation was nine times higher than that in the dark, which indicated that PPE-MnPc had a good photovoltaic response.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129984000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Huaran Liu, Lin-fei Liu, Xiaokun Song, Dan Hong, Y. Wang, Yijie Li
Epitaxial cerium oxide buffer layers were deposited on biaxially-textured (001) Ni tape using reel-to-reel pulsed laser deposition in a vacuum chamber. Relationship between microstructure and deposition parameters was systematically studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We found the optimal deposition parameters for CeO2 buffer layer which were quite suitable for preparing high-Jc YBCO films. The relationship between CeO2 layer thickness and crack formation has also been discussed.
{"title":"Growth orientation and surface morphology of CeO2 films for high-Jc YBCO films on biaxially textured Ni tape by PLD","authors":"Huaran Liu, Lin-fei Liu, Xiaokun Song, Dan Hong, Y. Wang, Yijie Li","doi":"10.1117/12.888280","DOIUrl":"https://doi.org/10.1117/12.888280","url":null,"abstract":"Epitaxial cerium oxide buffer layers were deposited on biaxially-textured (001) Ni tape using reel-to-reel pulsed laser deposition in a vacuum chamber. Relationship between microstructure and deposition parameters was systematically studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We found the optimal deposition parameters for CeO2 buffer layer which were quite suitable for preparing high-Jc YBCO films. The relationship between CeO2 layer thickness and crack formation has also been discussed.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129737491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhenyi Chen, Juan Qin, Xiao-lei Zhang, M. Zhang, Wei-min Shi, Linjun Wang
In this paper, silica thin films with different CdS quantum dot concentrations are deposited on glass substrates by a sol-gel dip-coating process, followed by thermal treatment at different annealing temperatures. The effects of CdS concentration and annealing temperature on the structural and optical properties of the composite films are investigated through X-ray diffraction, UV-Vis spectroscopy and photoluminescence spectra. Results show that the CdS crystallites with diameter of several nanometers in silica matrix are in cubic phase and shows preferred orientation of (200). The Stokes shift of about 0.3eV between its absorption peak and emission peak makes the CdS composite film be possible as an efficient light shifter to solar cells.
{"title":"Synthesis and optical properties of CdS quantum dot-embedded silica film for luminescent down-shifting layer","authors":"Zhenyi Chen, Juan Qin, Xiao-lei Zhang, M. Zhang, Wei-min Shi, Linjun Wang","doi":"10.1117/12.888425","DOIUrl":"https://doi.org/10.1117/12.888425","url":null,"abstract":"In this paper, silica thin films with different CdS quantum dot concentrations are deposited on glass substrates by a sol-gel dip-coating process, followed by thermal treatment at different annealing temperatures. The effects of CdS concentration and annealing temperature on the structural and optical properties of the composite films are investigated through X-ray diffraction, UV-Vis spectroscopy and photoluminescence spectra. Results show that the CdS crystallites with diameter of several nanometers in silica matrix are in cubic phase and shows preferred orientation of (200). The Stokes shift of about 0.3eV between its absorption peak and emission peak makes the CdS composite film be possible as an efficient light shifter to solar cells.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"336 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131492687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yumei Zhu, Jun Shen, Bin Zhou, Guang-ming Wu, Xingyuan Ni, Zhihua Zhang, Yuan Liu
A new way to modify the surface of mesoporous silica film to be hydrophobic is introduced in this paper. A surface modification agent Hexamethyldisilazane (HMDS) was applied to yield hydrophobic groups on the surface of porous silica films before and after template removal to prevent the absorption of moisture. Compared to the normal hydrophobic treatment, the hydrophobic properties of the mesoporous silica films were enhanced greatly after the two-step treatments.
{"title":"Effect of two-step organic modification on sol-gel derived mesoporous silica films","authors":"Yumei Zhu, Jun Shen, Bin Zhou, Guang-ming Wu, Xingyuan Ni, Zhihua Zhang, Yuan Liu","doi":"10.1117/12.888239","DOIUrl":"https://doi.org/10.1117/12.888239","url":null,"abstract":"A new way to modify the surface of mesoporous silica film to be hydrophobic is introduced in this paper. A surface modification agent Hexamethyldisilazane (HMDS) was applied to yield hydrophobic groups on the surface of porous silica films before and after template removal to prevent the absorption of moisture. Compared to the normal hydrophobic treatment, the hydrophobic properties of the mesoporous silica films were enhanced greatly after the two-step treatments.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127922515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hua-song Liu, Muxiao Liu, Zhanshan Wang, Yi-qin Ji, Jiangtao Lu
Primary reflector of the optical antenna is a key component in the space laser communication systems, and multi-wavelengths laser need to be worked in the common aperture. Reflection coating is designed for the primary reflector of a laser communication system, which can work at three wavelengths (633nm, 808nm, 1550nm), the designed target reflectance are R633nm≥50%, R808nm≥99% and R1550nm≥99% at angle of incidence from 0 to 20 deg. We selected Ta2O5 and SiO2 as the high refractive index and low refractive index coating materials, analyzed the impact on the reflection coating of the systemic errors and random errors, and determined the manufacture error of the coater system which can't greater than 1%. The Ion beam sputtering deposition technique was used to manufacture reflection coating for three-wavelengths and a LAMBDA900 spectrophotometer was used to analysis the reflectance at three wavelengths which achieved the design requirements. Finally we give the origin of manufacture error source for this high reflection coating. The reflection coating component was successfully used in the primary reflector of the optical antenna of the laser communication systems.
{"title":"Research on the reflection coating at three wavelengths for primary reflector of the optical antenna in the laser communication systems","authors":"Hua-song Liu, Muxiao Liu, Zhanshan Wang, Yi-qin Ji, Jiangtao Lu","doi":"10.1117/12.888406","DOIUrl":"https://doi.org/10.1117/12.888406","url":null,"abstract":"Primary reflector of the optical antenna is a key component in the space laser communication systems, and multi-wavelengths laser need to be worked in the common aperture. Reflection coating is designed for the primary reflector of a laser communication system, which can work at three wavelengths (633nm, 808nm, 1550nm), the designed target reflectance are R633nm≥50%, R808nm≥99% and R1550nm≥99% at angle of incidence from 0 to 20 deg. We selected Ta2O5 and SiO2 as the high refractive index and low refractive index coating materials, analyzed the impact on the reflection coating of the systemic errors and random errors, and determined the manufacture error of the coater system which can't greater than 1%. The Ion beam sputtering deposition technique was used to manufacture reflection coating for three-wavelengths and a LAMBDA900 spectrophotometer was used to analysis the reflectance at three wavelengths which achieved the design requirements. Finally we give the origin of manufacture error source for this high reflection coating. The reflection coating component was successfully used in the primary reflector of the optical antenna of the laser communication systems.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132313418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
TiW alloy is not only a excellent infrared radiant material, but also a infrared sensitive material, and was often used as a film in the infrared thermal imaging detectors. The temperature coefficient of resistance (TCR) of TiW alloy film is an important parameter influencing the characteristic, so it is very necessary to study the effect of TiW alloy films deposition parameters on TCR. In this paper, TiW alloy films were deposited by DC magnetron sputtering on ordinary glass, and the target is high pure TiW alloy material ((Ti:W)atom=3:7), the working gas is Ar. The square resistance of TiW alloy films under the different temperature was measured using four-point probe meter, and TCR was calculated according to the measurement curve. The influence of working pressure, Ar flow rate and sputtering current on the TCR of TiW alloy films was investigated. After studying, the best process parameters were obtained, that are, sputtering current 0.32A, working pressure 0.8Pa, and Ar flow rate 60sccm. Under these condition, TCR of TiW alloy films is 2‰/K. The measurement results indicate that the time stability of TiW alloy films is excellent.
{"title":"Study of TCR of TiW alloy films deposited by magnetron sputtering","authors":"Chang-long Cai, Yujia Zhai, Shun Zhou, Huan Liu, Jing Huang, Weiguo Liu","doi":"10.1117/12.888281","DOIUrl":"https://doi.org/10.1117/12.888281","url":null,"abstract":"TiW alloy is not only a excellent infrared radiant material, but also a infrared sensitive material, and was often used as a film in the infrared thermal imaging detectors. The temperature coefficient of resistance (TCR) of TiW alloy film is an important parameter influencing the characteristic, so it is very necessary to study the effect of TiW alloy films deposition parameters on TCR. In this paper, TiW alloy films were deposited by DC magnetron sputtering on ordinary glass, and the target is high pure TiW alloy material ((Ti:W)atom=3:7), the working gas is Ar. The square resistance of TiW alloy films under the different temperature was measured using four-point probe meter, and TCR was calculated according to the measurement curve. The influence of working pressure, Ar flow rate and sputtering current on the TCR of TiW alloy films was investigated. After studying, the best process parameters were obtained, that are, sputtering current 0.32A, working pressure 0.8Pa, and Ar flow rate 60sccm. Under these condition, TCR of TiW alloy films is 2‰/K. The measurement results indicate that the time stability of TiW alloy films is excellent.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125313166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Siqing Shen, Jian Wang, Zhi-bin Xu, Jianjun Xie, Ying Shi
Uniform and crack free Tb3+ doped lutetium oxide (Lu2O3:Tb) films were prepared by Pechini sol-gel method combined with the spin-coating technique. The influence of the different substrate (monocrystalline silicon (111) and silica glass) and atmosphere (N2 and Air) on the luminescence properties of films was investigated. According to the emission spectra, we found that the luminous intensity was higher on silica glass substrate. Moreover, it was found that the luminous intensity calcined in N2 was higher almost twice as that calcined in air.
{"title":"Luminescence properties of Lu2O3: Tb film prepared by Pechini sol-gel method","authors":"Siqing Shen, Jian Wang, Zhi-bin Xu, Jianjun Xie, Ying Shi","doi":"10.1117/12.888174","DOIUrl":"https://doi.org/10.1117/12.888174","url":null,"abstract":"Uniform and crack free Tb3+ doped lutetium oxide (Lu2O3:Tb) films were prepared by Pechini sol-gel method combined with the spin-coating technique. The influence of the different substrate (monocrystalline silicon (111) and silica glass) and atmosphere (N2 and Air) on the luminescence properties of films was investigated. According to the emission spectra, we found that the luminous intensity was higher on silica glass substrate. Moreover, it was found that the luminous intensity calcined in N2 was higher almost twice as that calcined in air.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"70 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120996302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Rui, Shuxin Li, Chao Song, Hongcheng Sun, Tao Lin, Yu Liu, Jun Xu, Wei Li, Kunji Chen
In this work, a-SiC:H films have been fabricated in plasma enhanced chemical vapor deposition system by controlling the gas flux ratio R of methane to silane and subsequently annealed in N2 atmosphere for 1 h at the temperature of 1000°C. Raman spectra showed the formation of Si nanocrystals embedded in amorphous SiC matrix after annealing. Room temperature visible electroluminescence was achieved due to the recombination of electron-hole pairs in Si nanocrystals for the annealed samples. The current-voltage relationships were also investigated and the tunneling mechanism was discussed based on the carrier transport properties.
{"title":"Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films","authors":"Y. Rui, Shuxin Li, Chao Song, Hongcheng Sun, Tao Lin, Yu Liu, Jun Xu, Wei Li, Kunji Chen","doi":"10.1117/12.888225","DOIUrl":"https://doi.org/10.1117/12.888225","url":null,"abstract":"In this work, a-SiC:H films have been fabricated in plasma enhanced chemical vapor deposition system by controlling the gas flux ratio R of methane to silane and subsequently annealed in N2 atmosphere for 1 h at the temperature of 1000°C. Raman spectra showed the formation of Si nanocrystals embedded in amorphous SiC matrix after annealing. Room temperature visible electroluminescence was achieved due to the recombination of electron-hole pairs in Si nanocrystals for the annealed samples. The current-voltage relationships were also investigated and the tunneling mechanism was discussed based on the carrier transport properties.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126982217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.
{"title":"MBE growth and electrical properties of InSb film on GaAs substrate","authors":"Y. Zhang, P. P. Chen, T. Lin, H. Xia, T. X. Li","doi":"10.1117/12.888173","DOIUrl":"https://doi.org/10.1117/12.888173","url":null,"abstract":"A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124444680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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