L. Nie, Wei-min Shi, Weigang Yang, Lei Ma, Liangliang Chen, Guang-pu Wei
Poly-HgI2 films with an average small grain size of about 50μm were obtained on ITO substrates by ultrasonic wave-assisted vapor deposition method whose deposition temperature can be as low as 40 degree celsius. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum characterization suggested that the film grew along the (001) crystal plane with uniform grain size. Dark current of the film and its response to X-ray had also been investigated with Au as pixel electrodes, the response uniformity on all 16 pixels is within 10%.
{"title":"High uniformity HgI2 thick film prepared by ultrasonic wave-assisted physical vapor deposition","authors":"L. Nie, Wei-min Shi, Weigang Yang, Lei Ma, Liangliang Chen, Guang-pu Wei","doi":"10.1117/12.888221","DOIUrl":"https://doi.org/10.1117/12.888221","url":null,"abstract":"Poly-HgI2 films with an average small grain size of about 50μm were obtained on ITO substrates by ultrasonic wave-assisted vapor deposition method whose deposition temperature can be as low as 40 degree celsius. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum characterization suggested that the film grew along the (001) crystal plane with uniform grain size. Dark current of the film and its response to X-ray had also been investigated with Au as pixel electrodes, the response uniformity on all 16 pixels is within 10%.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"331 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134218805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lu Huang, Jing Jin, Wei-min Shi, Fanfeng Yu, Jie Sun, Haokun Hu, Zechun Cao, Guang-pu Wei
A model using Ansys software was established to simulate electrical parameters of solar cell when incident sunlight radiated on its surface. In the model, solar cell electrical parameters were experimentally characterized as the solar cell was exposed through hollow out mask. The experimental and numerical photovoltaic performances were completely matched. The results showed that the central field of solar cell had higher efficiency than the edge field of which on the same area exposed to sunlight. The results also showed that surface uniformity and edge recombination were two important loss mechanisms, which decreased solar cell efficiency.
{"title":"Analysis on the surface uniformity and edge recombination of single-crystalline silicon solar cells on electrical parameters","authors":"Lu Huang, Jing Jin, Wei-min Shi, Fanfeng Yu, Jie Sun, Haokun Hu, Zechun Cao, Guang-pu Wei","doi":"10.1117/12.888223","DOIUrl":"https://doi.org/10.1117/12.888223","url":null,"abstract":"A model using Ansys software was established to simulate electrical parameters of solar cell when incident sunlight radiated on its surface. In the model, solar cell electrical parameters were experimentally characterized as the solar cell was exposed through hollow out mask. The experimental and numerical photovoltaic performances were completely matched. The results showed that the central field of solar cell had higher efficiency than the edge field of which on the same area exposed to sunlight. The results also showed that surface uniformity and edge recombination were two important loss mechanisms, which decreased solar cell efficiency.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131183188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The phosphorous (P)-doped hydrogenated amorphous silicon (a-Si:H) thin films were crystallized by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser with laser beam shaping system introduced by a fly-eye lens array. The correlations among crystallization, stress and microstructures with surface morphology during crystallization process can be determined. The increased crystalline fraction (XC) is realized by a considerable stress release. It is observed that the periodic two dimensional grid patterns with the period of about 15 μm are formed at laser energy density (EL) of 740 mJ/cm2 and are very sensitive to the energy density. Further increasing laser energy density to laser ablation can give rise to the irradiation damage on the film with poor crystalline quality and high surface roughness.
{"title":"Crystallization of amorphous silicon films by a Nd:YAG laser and correlated surface morphology","authors":"Jing Jin, Lu Huang, Zhijun Yuan, Wei-min Shi, Zechun Cao, Junming Zhou","doi":"10.1117/12.888222","DOIUrl":"https://doi.org/10.1117/12.888222","url":null,"abstract":"The phosphorous (P)-doped hydrogenated amorphous silicon (a-Si:H) thin films were crystallized by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser with laser beam shaping system introduced by a fly-eye lens array. The correlations among crystallization, stress and microstructures with surface morphology during crystallization process can be determined. The increased crystalline fraction (XC) is realized by a considerable stress release. It is observed that the periodic two dimensional grid patterns with the period of about 15 μm are formed at laser energy density (EL) of 740 mJ/cm2 and are very sensitive to the energy density. Further increasing laser energy density to laser ablation can give rise to the irradiation damage on the film with poor crystalline quality and high surface roughness.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131217509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wenjuan Wu, Jingtao Zhu, Fengli Wang, Zhong Zhang, Hongchang Wang, Shumin Zhang, Zhanshan Wang, Lingyan Chen, Hongjun Zhou, T. Huo
Mutilayers are important optical elements and widely used for extreme ultraviolet astronomical observation. For selecting the emission line multilayers should have high reflectivity and narrow spectral bandwidth. In this paper, six different multilayers including Si/C, Si/B4C, Si/Mo/B4C, Si/SiC, Mg/SiC and Mo/Si were designed for normal incidence angle of 5° at He-IIemission line(λ=30.4 nm). These multilayers have been fabricated using a direct current magnetron sputtering system. The period of multilayers were measured by X-ray diffractometer(XRD) and the reflectivities were measured on National Synchrotron Radiation Facility in Hefei, China. Then the reflectivities and the spectral bandwidth of these multilayers were compared respectively. It shows that the spectral bandwidth of multilayers of low Z materials is narrower than that of the normal Mo/Si multiayer, the reflectivity of Si/Mo/B4C multilayer is higher than that of Si-based multilayers of two kinds of materials. And Mg/SiC multilayer has the highest reflectivity of 43.81% and the narrowest spectral bandwidth of 1.44nm, which proves that Mg/SiC multilayer is more potential for selecting the emission line in extreme ultraviolet solar physics.
{"title":"Extreme ultraviolet reflective multilayers at 30.4nm","authors":"Wenjuan Wu, Jingtao Zhu, Fengli Wang, Zhong Zhang, Hongchang Wang, Shumin Zhang, Zhanshan Wang, Lingyan Chen, Hongjun Zhou, T. Huo","doi":"10.1117/12.888159","DOIUrl":"https://doi.org/10.1117/12.888159","url":null,"abstract":"Mutilayers are important optical elements and widely used for extreme ultraviolet astronomical observation. For selecting the emission line multilayers should have high reflectivity and narrow spectral bandwidth. In this paper, six different multilayers including Si/C, Si/B4C, Si/Mo/B4C, Si/SiC, Mg/SiC and Mo/Si were designed for normal incidence angle of 5° at He-IIemission line(λ=30.4 nm). These multilayers have been fabricated using a direct current magnetron sputtering system. The period of multilayers were measured by X-ray diffractometer(XRD) and the reflectivities were measured on National Synchrotron Radiation Facility in Hefei, China. Then the reflectivities and the spectral bandwidth of these multilayers were compared respectively. It shows that the spectral bandwidth of multilayers of low Z materials is narrower than that of the normal Mo/Si multiayer, the reflectivity of Si/Mo/B4C multilayer is higher than that of Si-based multilayers of two kinds of materials. And Mg/SiC multilayer has the highest reflectivity of 43.81% and the narrowest spectral bandwidth of 1.44nm, which proves that Mg/SiC multilayer is more potential for selecting the emission line in extreme ultraviolet solar physics.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128889582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A diamond/SiO2/ indium-tin oxide (ITO) thin film multilayer structure of electroluminescent devices was reported. Effects of process parameters on morphologies and structures of the thin films were detected and analyzed by scanning electron microscopy, X-ray diffraction (XRD) spectrometer and X-ray photoelectron spectrometer (XPS). Finally a strong monochromatic red light emission was observed from this multilayer structure device, the electroluminescence spectrum at room temperature shows that the only illumination peak locates at 742nm, which is attributed to silicon atoms within the diamond film impurity center.
{"title":"Red electroluminescence of diamond thin films","authors":"Xiaoping Wang, Yu Zhu, Xin-Xin Liu","doi":"10.1117/12.888163","DOIUrl":"https://doi.org/10.1117/12.888163","url":null,"abstract":"A diamond/SiO2/ indium-tin oxide (ITO) thin film multilayer structure of electroluminescent devices was reported. Effects of process parameters on morphologies and structures of the thin films were detected and analyzed by scanning electron microscopy, X-ray diffraction (XRD) spectrometer and X-ray photoelectron spectrometer (XPS). Finally a strong monochromatic red light emission was observed from this multilayer structure device, the electroluminescence spectrum at room temperature shows that the only illumination peak locates at 742nm, which is attributed to silicon atoms within the diamond film impurity center.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127395005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yi-qin Ji, Deying Chen, Weihao Li, Bingjun Wu, J. Zong, Dan-dan Liu, Yanmin Zhang
Indium tin oxide (ITO) thin film with SiO2 protective upper layer prepared by electron beam evaporation was annealed in air up to 300°C. Evolution of transmittance, resistance and surface morphology of this SiO2/ITO coating was studied. Transmittance in visible and near-infrared range both increased while absorption edge exhibited red shift after annealing. Resistance increased monotonously with rising annealing temperature, yet increments became smaller at temperatures above 270°C. Micron-defects were observed on the surface of SiO2/ITO coating after annealing. Enhancement of crystallinity of ITO layer at high temperatures was thought to be responsible for these morphology and resistance evolutions.
{"title":"Air-annealing effects on SiO2/ITO coating","authors":"Yi-qin Ji, Deying Chen, Weihao Li, Bingjun Wu, J. Zong, Dan-dan Liu, Yanmin Zhang","doi":"10.1117/12.888408","DOIUrl":"https://doi.org/10.1117/12.888408","url":null,"abstract":"Indium tin oxide (ITO) thin film with SiO2 protective upper layer prepared by electron beam evaporation was annealed in air up to 300°C. Evolution of transmittance, resistance and surface morphology of this SiO2/ITO coating was studied. Transmittance in visible and near-infrared range both increased while absorption edge exhibited red shift after annealing. Resistance increased monotonously with rising annealing temperature, yet increments became smaller at temperatures above 270°C. Micron-defects were observed on the surface of SiO2/ITO coating after annealing. Enhancement of crystallinity of ITO layer at high temperatures was thought to be responsible for these morphology and resistance evolutions.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116337783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spectroscopic ellipsometry was used to extract the optical properties of Ba0.4Sr0.6-xMnxTiO3 (BSMT) (x from 1% to 20%) ceramics in the 0.7-4.7 eV (260-1700 nm) photon energy range at room temperature. X-ray diffraction analysis showed that BSMT ceramics are polycrystalline and lattice constants with different Mn composition present a slight variation. By reproducing the experimental ellipsometric spectra (Ψ and Δ), the optical constants and optical band gap energy have been obtained. It was found that the refractive index n increases first and then decreases as the photon energy increases from 0.7 to 4.7 eV for all the samples. The extinction coefficient k increases with increasing photon energy. On the other hand, both n and k decrease with increasing doping level of Mn (x ≤ 5%). Direct optical band gap energy is estimated to be 3.45-3.71 eV owing to different Mn doping. The difference of the optical properties can be ascribed to structure distortion with different Mn composition. The present results could be useful for future application of (Ba,Sr)TiO3-based optoelectronic devices.
{"title":"Ellipsometric study of ferroelectric Ba0.4Sr0.6-xMnxTiO3 ceramics from 0.7 to 4.7 eV","authors":"K. Jiang, J. Z. Zhang, Z. Hu","doi":"10.1117/12.888289","DOIUrl":"https://doi.org/10.1117/12.888289","url":null,"abstract":"Spectroscopic ellipsometry was used to extract the optical properties of Ba0.4Sr0.6-xMnxTiO3 (BSMT) (x from 1% to 20%) ceramics in the 0.7-4.7 eV (260-1700 nm) photon energy range at room temperature. X-ray diffraction analysis showed that BSMT ceramics are polycrystalline and lattice constants with different Mn composition present a slight variation. By reproducing the experimental ellipsometric spectra (Ψ and Δ), the optical constants and optical band gap energy have been obtained. It was found that the refractive index n increases first and then decreases as the photon energy increases from 0.7 to 4.7 eV for all the samples. The extinction coefficient k increases with increasing photon energy. On the other hand, both n and k decrease with increasing doping level of Mn (x ≤ 5%). Direct optical band gap energy is estimated to be 3.45-3.71 eV owing to different Mn doping. The difference of the optical properties can be ascribed to structure distortion with different Mn composition. The present results could be useful for future application of (Ba,Sr)TiO3-based optoelectronic devices.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122097123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We describe some destructive and non-destructive techniques that can be useful to examine multilayers and particularly their interfaces. The presented non-destructive techniques allow obtaining the electron structure of the sample and then determine the chemical states of the elements in the multilayer from the analysis of the occupied (x-ray emission and photoemission spectroscopies) or unoccupied (x-ray absorption or electron energy loss spectroscopies) states. Among the destructive techniques we introduce secondary ion mass spectrometry and transmission electron microscopy that bring some information about the structural quality of the samples.
{"title":"Some techniques to characterize multilayers and their interfaces","authors":"P. Jonnard","doi":"10.1117/12.888172","DOIUrl":"https://doi.org/10.1117/12.888172","url":null,"abstract":"We describe some destructive and non-destructive techniques that can be useful to examine multilayers and particularly their interfaces. The presented non-destructive techniques allow obtaining the electron structure of the sample and then determine the chemical states of the elements in the multilayer from the analysis of the occupied (x-ray emission and photoemission spectroscopies) or unoccupied (x-ray absorption or electron energy loss spectroscopies) states. Among the destructive techniques we introduce secondary ion mass spectrometry and transmission electron microscopy that bring some information about the structural quality of the samples.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128423350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Du, Lixin Li, Haitao Jiang, Yunhui Li, Liwei Zhang, Junfang Zhao, Tianlin Yang, Zhongchen Wu, Shumei Song, Yanhui Li, M. Lv
We theoretically show that a one-dimensional finite all-dielectric periodic structure composed of symmetric unit cells can possess a broad flattop transparent photonic band. In contrast to the conventional viewpoint that the thickness of the truncated photonic crystals affects the transmission within the pass band, the transparent photonic band is insensitive to the change of the periodic number since the equivalent refractive indices of our structures can be nearly equal to that of the background in a wide frequency range. With easy fabrication, this broad flattop transparent photonic band will play an important role in the broadband filtering.
{"title":"Broad flattop transparent photonic band in truncated photonic crystals composed of the symmetric unit cell","authors":"G. Du, Lixin Li, Haitao Jiang, Yunhui Li, Liwei Zhang, Junfang Zhao, Tianlin Yang, Zhongchen Wu, Shumei Song, Yanhui Li, M. Lv","doi":"10.1117/12.888196","DOIUrl":"https://doi.org/10.1117/12.888196","url":null,"abstract":"We theoretically show that a one-dimensional finite all-dielectric periodic structure composed of symmetric unit cells can possess a broad flattop transparent photonic band. In contrast to the conventional viewpoint that the thickness of the truncated photonic crystals affects the transmission within the pass band, the transparent photonic band is insensitive to the change of the periodic number since the equivalent refractive indices of our structures can be nearly equal to that of the background in a wide frequency range. With easy fabrication, this broad flattop transparent photonic band will play an important role in the broadband filtering.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130628782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Sivananthan, M. Carmody, C. Gilmore, J. Garland
CdTe/Si substrates with etch-pit densities ~5 x 104 - 2 x105 cm-2 and x-ray diffraction full-width at half-maximum <60 arcsec over >60% of a 3" substrate and ≤85 arcsec over the entire area are now available. Midwave and shortwave HgCdTe infrared detectors fabricated on these substrates have device characteristics as good as those of detectors fabricated on lattice-matched CdZnTe substrates. Also, minority carrier lifetimes of 100s of nanoseconds are measured for CdTe/Si and CdZnTe/Si, and both can be p-doped 1017 cm-3 and n-doped >1020 cm-3. Calculations suggest that the use of these materials should yield multijunction solar cells with efficiencies higher than those of the corresponding III-V multijunction cells at much lower cost, using rugged, large-area, inexpensive active Si substrates. The first CdZnTe/Si single-junction solar cells fabricated by EPIR displayed an electronic-charge times open-circuit voltage, qVoc, within ~0.45 eV of the CdZnTe bandgap Eg, as good a result as that for the best III-V alloy single-junction cells, and confirmed the suitability of single-crystal CdZnTe/Si for the manufacture of high-efficiency solar cells.
{"title":"Molecular beam epitaxial growth of CdTe and related II-VI materials on Si for the fabrication of infrared detectors and solar cells","authors":"S. Sivananthan, M. Carmody, C. Gilmore, J. Garland","doi":"10.1117/12.888643","DOIUrl":"https://doi.org/10.1117/12.888643","url":null,"abstract":"CdTe/Si substrates with etch-pit densities ~5 x 104 - 2 x105 cm-2 and x-ray diffraction full-width at half-maximum <60 arcsec over >60% of a 3\" substrate and ≤85 arcsec over the entire area are now available. Midwave and shortwave HgCdTe infrared detectors fabricated on these substrates have device characteristics as good as those of detectors fabricated on lattice-matched CdZnTe substrates. Also, minority carrier lifetimes of 100s of nanoseconds are measured for CdTe/Si and CdZnTe/Si, and both can be p-doped 1017 cm-3 and n-doped >1020 cm-3. Calculations suggest that the use of these materials should yield multijunction solar cells with efficiencies higher than those of the corresponding III-V multijunction cells at much lower cost, using rugged, large-area, inexpensive active Si substrates. The first CdZnTe/Si single-junction solar cells fabricated by EPIR displayed an electronic-charge times open-circuit voltage, qVoc, within ~0.45 eV of the CdZnTe bandgap Eg, as good a result as that for the best III-V alloy single-junction cells, and confirmed the suitability of single-crystal CdZnTe/Si for the manufacture of high-efficiency solar cells.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130818861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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