首页 > 最新文献

8th International Conference on Electrical and Computer Engineering最新文献

英文 中文
Design of a high speed OFDM transmitter and receiver 高速OFDM收发器的设计
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026872
Foisal Ahmed, Md Liakot Ali, Mohammad Imam Hasan Bin Asad
System-on-a-chip (SoC) is now a trend in digital design because it gives a lot of advantages over discrete electronic based product such as higher speed, lower power consumption, smaller size, lower cost etc. Reconfigurable platforms such as FPGA, CPLD, and PLD are now being used for designing and implementing SoC due to their low cost, high capacity and tremendous speed. In this project single chip Orthogonal Frequency Division Multiplexing (OFDM) transmitter and receiver have been designed using Verilog HDL. OFDM is a multi carrier modulation technique used in the various digital communication systems like 3G GSM, WiMAX and LTE etc. The main advantage of this transmission technique is its robustness to channel fading in wireless communication environment. There are many applications of OFDM in communication such as digital audio broadcasting, Asynchronous Digital Subscriber Line (ADSL) and High bit-rate Digital Subscriber Line (HDSL) systems. In OFDM, two algorithms digital signal processing algorithm Fast Fourier transform (FFT) and Inverse Fast Fourier Transform (IFFT) are mainly involved. The 8-point IFFT/FFT Decimation-In-Frequency (DIF) with radix-2 algorithm has been analyzed and incorporated in the design. The design has been simulated on the FPGA platform with Altera's Quartus II simulator. Simulation results show that each of the modules of the proposed OFDM is working as desired. The test output achieved from the simulation result of the OFDM has been verified with that of the MATLAB output.
片上系统(SoC)现在是数字设计的一种趋势,因为它比基于离散电子的产品具有许多优势,例如更高的速度,更低的功耗,更小的尺寸,更低的成本等。可重构平台,如FPGA、CPLD和PLD,由于其低成本、高容量和巨大的速度,现在被用于设计和实现SoC。本课题利用Verilog HDL语言设计了单片机正交频分复用(OFDM)收发器。OFDM是一种多载波调制技术,用于各种数字通信系统,如3G、GSM、WiMAX和LTE等。该传输技术的主要优点是对无线通信环境下的信道衰落具有较强的鲁棒性。OFDM在通信中有许多应用,如数字音频广播、异步数字用户线(ADSL)和高比特率数字用户线(HDSL)系统。在OFDM中,主要涉及到数字信号处理算法快速傅立叶变换(FFT)和反快速傅立叶变换(IFFT)两种算法。分析了基于基数-2的8点IFFT/FFT频率抽取(DIF)算法,并将其纳入设计中。该设计已在Altera的Quartus II模拟器的FPGA平台上进行了仿真。仿真结果表明,所提出的OFDM各模块均能正常工作。由OFDM仿真结果得到的测试输出与MATLAB输出进行了验证。
{"title":"Design of a high speed OFDM transmitter and receiver","authors":"Foisal Ahmed, Md Liakot Ali, Mohammad Imam Hasan Bin Asad","doi":"10.1109/ICECE.2014.7026872","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026872","url":null,"abstract":"System-on-a-chip (SoC) is now a trend in digital design because it gives a lot of advantages over discrete electronic based product such as higher speed, lower power consumption, smaller size, lower cost etc. Reconfigurable platforms such as FPGA, CPLD, and PLD are now being used for designing and implementing SoC due to their low cost, high capacity and tremendous speed. In this project single chip Orthogonal Frequency Division Multiplexing (OFDM) transmitter and receiver have been designed using Verilog HDL. OFDM is a multi carrier modulation technique used in the various digital communication systems like 3G GSM, WiMAX and LTE etc. The main advantage of this transmission technique is its robustness to channel fading in wireless communication environment. There are many applications of OFDM in communication such as digital audio broadcasting, Asynchronous Digital Subscriber Line (ADSL) and High bit-rate Digital Subscriber Line (HDSL) systems. In OFDM, two algorithms digital signal processing algorithm Fast Fourier transform (FFT) and Inverse Fast Fourier Transform (IFFT) are mainly involved. The 8-point IFFT/FFT Decimation-In-Frequency (DIF) with radix-2 algorithm has been analyzed and incorporated in the design. The design has been simulated on the FPGA platform with Altera's Quartus II simulator. Simulation results show that each of the modules of the proposed OFDM is working as desired. The test output achieved from the simulation result of the OFDM has been verified with that of the MATLAB output.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132484406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Influence of band parameter of gate dielectrics on the ballistic performance at same EOT 相同EOT条件下栅极介质带参数对弹道性能的影响
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026887
M. N. Alam, M. Islam, Md.R. Islam
Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔEC) at gate oxide-channel interface dominates the ballistic performance. In case of In0.3Ga0.7Sb XOI nFET using Al2O3 and HfO2 with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔEC.
不同的高k介电体如果其物理厚度不相等但等效,则被认为可以提供相同的器件性能,称为“等效氧化物厚度”(EOT)。对于像XOI这样的超薄体(UTB)器件,尽管存在EOT,但栅极氧化通道界面的导通带偏移(ΔEC)主导了弹道性能。对于使用Al2O3和HfO2的In0.3Ga0.7Sb XOI nFET, EOT为0.5 nm时,我们发现阈值电压随着ΔEC的增加而降低,亚阈值斜率(SS)增加。
{"title":"Influence of band parameter of gate dielectrics on the ballistic performance at same EOT","authors":"M. N. Alam, M. Islam, Md.R. Islam","doi":"10.1109/ICECE.2014.7026887","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026887","url":null,"abstract":"Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔE<sub>C</sub>) at gate oxide-channel interface dominates the ballistic performance. In case of In<sub>0.3</sub>Ga<sub>0.7</sub>Sb XOI nFET using Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔE<sub>C</sub>.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133863249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromagnetic wave propagation characteristics in single walled metallic carbon nanotube 电磁波在单壁金属碳纳米管中的传播特性
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026970
Md Shantanu Islam, M. Matin, M. Hossain
The metallic single walled carbon nanotubes have been proposed as a promising inter connector in intra-chip and inter-chip packaging applications as well as passive devices for future generation terahertz IC (Integrated Circuit) technology, due to their superior electrical and thermal properties compared with those of copper. In this paper a theoretical investigation is carried out to predict phase and group velocities and the attenuation characteristics of single walled metallic carbon nanotubes (SWCNTs), and bundled SWCNTs in the terahertz regime. The expressions for attenuation constant, phase constant, phase velocity, and group velocity have been derived using transmission line theory. It is found that the predicted phase and group velocities in single SWCNT, bundled SWCNTs are strongly frequency dependent and increases with frequency. It is also noticed that the group velocity decreases after having a peak at around 100 GHz for both single SWCNT and bundled SWCNT.
与铜相比,金属单壁碳纳米管具有优越的电学和热学性能,因此在芯片内和芯片间封装应用以及下一代太赫兹集成电路技术的无源器件中,被认为是一种很有前途的内部连接器。本文从理论上研究了单壁金属碳纳米管(SWCNTs)和束状SWCNTs在太赫兹波段的相速度和群速度以及衰减特性。利用传输线理论推导了衰减常数、相位常数、相速度和群速度的表达式。研究发现,单个SWCNTs和捆绑SWCNTs的预测相速度和群速度与频率密切相关,并随频率增加而增加。还注意到,对于单个swcnts和捆绑swcnts,在100 GHz左右出现峰值后,群速度下降。
{"title":"Electromagnetic wave propagation characteristics in single walled metallic carbon nanotube","authors":"Md Shantanu Islam, M. Matin, M. Hossain","doi":"10.1109/ICECE.2014.7026970","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026970","url":null,"abstract":"The metallic single walled carbon nanotubes have been proposed as a promising inter connector in intra-chip and inter-chip packaging applications as well as passive devices for future generation terahertz IC (Integrated Circuit) technology, due to their superior electrical and thermal properties compared with those of copper. In this paper a theoretical investigation is carried out to predict phase and group velocities and the attenuation characteristics of single walled metallic carbon nanotubes (SWCNTs), and bundled SWCNTs in the terahertz regime. The expressions for attenuation constant, phase constant, phase velocity, and group velocity have been derived using transmission line theory. It is found that the predicted phase and group velocities in single SWCNT, bundled SWCNTs are strongly frequency dependent and increases with frequency. It is also noticed that the group velocity decreases after having a peak at around 100 GHz for both single SWCNT and bundled SWCNT.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130758316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Connected component based ROI selection to improve identification of microcalcification from mammogram images 基于连接分量的ROI选择提高乳房x线图像微钙化的识别
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026990
M. Haque, K. M. Imtiaz-Ud-Din, M. Rahman, Aminur Rahman
In this paper, we propose automated image processing method for mammogram image analysis to enhance the classification of malignant and benign clustered micro calcifications. Mini-Mias, one of the most renowned mammogram dataset, is used for our experiment. Region of interest (ROI) is selected using connected component labeling method. Shape and textural features are computed and used in five different classifiers to validate the correctness of labeling method usage for this specific research. Experimental results show that Random Forest and Bagging classifier can produce best classification accuracy among them. We used Receiver operating characteristic (ROC) analysis to asses and differentiate the classification performance from different methods. Random Forest and Bagging, both classifiers provide more than 99% accuracy.
在本文中,我们提出了一种用于乳房x光图像分析的自动图像处理方法,以增强恶性和良性聚集性微钙化的分类。我们的实验使用了最著名的乳房x光数据集之一Mini-Mias。利用连通分量标记法选择感兴趣区域。计算形状和纹理特征,并在五种不同的分类器中使用,以验证标记方法用于本特定研究的正确性。实验结果表明,随机森林分类器和Bagging分类器的分类精度最好。我们使用受试者工作特征(ROC)分析来评估和区分不同方法的分类性能。随机森林和Bagging,这两个分类器都提供了超过99%的准确率。
{"title":"Connected component based ROI selection to improve identification of microcalcification from mammogram images","authors":"M. Haque, K. M. Imtiaz-Ud-Din, M. Rahman, Aminur Rahman","doi":"10.1109/ICECE.2014.7026990","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026990","url":null,"abstract":"In this paper, we propose automated image processing method for mammogram image analysis to enhance the classification of malignant and benign clustered micro calcifications. Mini-Mias, one of the most renowned mammogram dataset, is used for our experiment. Region of interest (ROI) is selected using connected component labeling method. Shape and textural features are computed and used in five different classifiers to validate the correctness of labeling method usage for this specific research. Experimental results show that Random Forest and Bagging classifier can produce best classification accuracy among them. We used Receiver operating characteristic (ROC) analysis to asses and differentiate the classification performance from different methods. Random Forest and Bagging, both classifiers provide more than 99% accuracy.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133240423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Particle filter based attitude matching algorithm for in-flight transfer alignment 基于粒子滤波的飞行转移对准姿态匹配算法
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026894
S. Chattaraj, A. Mukherjee
Attitude plus velocity matching transfer alignment (TA) (Rapid Alignment Prototype RAP) algorithm has the advantage of faster convergence and it does not require pre - planned lengthy manoeuvre like velocity matching algorithm, which makes it best suited for tactical missions. For large initial misalignment angles, TA problem becomes nonlinear, for which, a conventional particle filter (CPF) based TA algorithm can be used to estimate misalignment. Time varying nature as well as dependencies on external parameters like sensor measurements of state transition matrix of TA problem, makes the system behavior unpredictable and hard to model. A CPF fails in this situation, due to its inability to capture complex nonlinearity associated with the system through system dynamics, due to sample impoverishment problem. Current work addresses this scenario and proposes an evolutionary strategy based algorithm, which performs effectively in such condition, by simulating varied system dynamics through generation of multiple support points. These algorithms are designed and tested for both perfectly modeled and perturbed systems. Simulation results are presented which shows the effectiveness of the proposed algorithm.
姿态+速度匹配转移对准(TA) (Rapid alignment Prototype RAP)算法具有收敛速度快、不像速度匹配算法那样需要预先计划长时间的机动等优点,最适合战术任务。对于较大的初始不对准角,TA问题变得非线性,因此可以使用基于传统粒子滤波(CPF)的TA算法来估计不对准。TA问题的时变特性以及对外部参数(如状态转移矩阵的传感器测量值)的依赖,使得系统行为不可预测且难以建模。CPF在这种情况下失败,因为它无法通过系统动力学捕获与系统相关的复杂非线性,由于样本贫化问题。目前的工作解决了这种情况,并提出了一种基于进化策略的算法,该算法通过生成多个支撑点来模拟不同的系统动力学,从而在这种情况下有效地执行。这些算法的设计和测试都适用于完美模型和扰动系统。仿真结果表明了该算法的有效性。
{"title":"Particle filter based attitude matching algorithm for in-flight transfer alignment","authors":"S. Chattaraj, A. Mukherjee","doi":"10.1109/ICECE.2014.7026894","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026894","url":null,"abstract":"Attitude plus velocity matching transfer alignment (TA) (Rapid Alignment Prototype RAP) algorithm has the advantage of faster convergence and it does not require pre - planned lengthy manoeuvre like velocity matching algorithm, which makes it best suited for tactical missions. For large initial misalignment angles, TA problem becomes nonlinear, for which, a conventional particle filter (CPF) based TA algorithm can be used to estimate misalignment. Time varying nature as well as dependencies on external parameters like sensor measurements of state transition matrix of TA problem, makes the system behavior unpredictable and hard to model. A CPF fails in this situation, due to its inability to capture complex nonlinearity associated with the system through system dynamics, due to sample impoverishment problem. Current work addresses this scenario and proposes an evolutionary strategy based algorithm, which performs effectively in such condition, by simulating varied system dynamics through generation of multiple support points. These algorithms are designed and tested for both perfectly modeled and perturbed systems. Simulation results are presented which shows the effectiveness of the proposed algorithm.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133851370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
An analytical model of minority carrier in exponentially doped solar cell under illumination 光照下指数掺杂太阳能电池中少数载流子的解析模型
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026945
B. Debnath, Topojit Debnath, M. Chowdhury, M. Z. R. Khan
A compact analytical model of minority carrier -concentration is presented for an exponentially-doped quasi-neutral region of Silicon solar cell. It is an iteration-free and integral-free mathematical expression that addresses the non-uniformity in doping and contribution from terrestrial solar spectrum. Due to the position dependency of transport parameters, the differential equation becomes intractable. The proposed model incorporates an elegant approximated carrier generation rate to overcome the problem and presents a new solution for minority carrier concentration by using the modified Bessel function and Hypergeometric function. The compact analytical solution is in good agreement with COMSOL drift-diffusion model and TCAD device simulator for a wide variation of doping and surface recombination velocity.
提出了硅太阳电池指数掺杂准中性区少数载流子浓度的紧凑解析模型。它是一个无迭代、无积分的数学表达式,解决了掺杂的不均匀性和地球太阳光谱的贡献。由于输运参数的位置依赖性,微分方程变得难以处理。该模型引入了一个优雅的近似载流子生成率来克服这一问题,并利用改进的贝塞尔函数和超几何函数提出了一种新的解决少数载流子浓度问题的方法。紧凑的解析解与COMSOL漂移-扩散模型和TCAD器件模拟器在掺杂和表面复合速度变化较大的情况下具有较好的一致性。
{"title":"An analytical model of minority carrier in exponentially doped solar cell under illumination","authors":"B. Debnath, Topojit Debnath, M. Chowdhury, M. Z. R. Khan","doi":"10.1109/ICECE.2014.7026945","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026945","url":null,"abstract":"A compact analytical model of minority carrier -concentration is presented for an exponentially-doped quasi-neutral region of Silicon solar cell. It is an iteration-free and integral-free mathematical expression that addresses the non-uniformity in doping and contribution from terrestrial solar spectrum. Due to the position dependency of transport parameters, the differential equation becomes intractable. The proposed model incorporates an elegant approximated carrier generation rate to overcome the problem and presents a new solution for minority carrier concentration by using the modified Bessel function and Hypergeometric function. The compact analytical solution is in good agreement with COMSOL drift-diffusion model and TCAD device simulator for a wide variation of doping and surface recombination velocity.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115773866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Split inductor based neutral point clamped inverter using improved modulation technique to reduce common mode voltage 基于分路电感的中性点箝位逆变器采用改进的调制技术来降低共模电压
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7027023
M. Ferdous, S. Kabir, M. Siddique, U. Salma
Due to high switching frequency and modulation strategy, neutral point clamped (NPC) inverter generates varying common mode voltage as well as leakage current in PV and wind turbine system. This leakage current causes electrical hazard, THD at the output voltage, EMI and ultimate pollution at the output power. To reduce this varying common mode voltage and leakage current, this paper proposes a Split Inductor based Neutral Point Clamped (SINPC) inverter with improved modulation technique. The proposed inverter can reduce common mode voltage and suppress leakage current comprehensively. In order to verify the effectiveness of the SINPC inverter with improved modulation, simulation has been carried out in PSIM software. Finally, the output wave shape of reduced common mode voltage and leakage current ensures the effectivity of the proposed circuit.
中性点箝位(NPC)逆变器由于其高开关频率和调制策略,在光伏和风力发电系统中产生变共模电压和漏电流。这种泄漏电流造成电气危害,在输出电压处产生THD,在输出功率处产生EMI和最终污染。为了降低这种共模电压和漏电流的变化,本文提出了一种基于分路电感的中性点箝位(SINPC)逆变器,并改进了调制技术。该逆变器能全面降低共模电压,抑制漏电流。为了验证改进调制方式的SINPC逆变器的有效性,在PSIM软件中进行了仿真。最后,降低共模电压和漏电流的输出波形保证了电路的有效性。
{"title":"Split inductor based neutral point clamped inverter using improved modulation technique to reduce common mode voltage","authors":"M. Ferdous, S. Kabir, M. Siddique, U. Salma","doi":"10.1109/ICECE.2014.7027023","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7027023","url":null,"abstract":"Due to high switching frequency and modulation strategy, neutral point clamped (NPC) inverter generates varying common mode voltage as well as leakage current in PV and wind turbine system. This leakage current causes electrical hazard, THD at the output voltage, EMI and ultimate pollution at the output power. To reduce this varying common mode voltage and leakage current, this paper proposes a Split Inductor based Neutral Point Clamped (SINPC) inverter with improved modulation technique. The proposed inverter can reduce common mode voltage and suppress leakage current comprehensively. In order to verify the effectiveness of the SINPC inverter with improved modulation, simulation has been carried out in PSIM software. Finally, the output wave shape of reduced common mode voltage and leakage current ensures the effectivity of the proposed circuit.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124367724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis of bending effects on hexagonal and rectangular photonic crystal fiber 六边形和矩形光子晶体光纤的弯曲效应分析
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026912
Tamal Sarkar, Mofijur Rahman, Anamika Dey
This paper presents photonic crystal fibers (PCF) based on hexagonal and rectangular structures designed to be operated in a range of wavelength 1.3 to 1.7 μm and effects of various parameters on bending loss of the different structured index guiding PCFs have been investigated. According to simulation, bending loss is reduced down to 10-12 dB/km from 10-5 dB/km by changing bending radius and core diameters.Due to having low bending loss, these PCF structures can be used in applications of optical technologies including telecommunication and sensing applications.
本文提出了一种工作波长为1.3 ~ 1.7 μm的六角形和矩形结构光子晶体光纤,研究了不同参数对不同折射率结构光子晶体光纤弯曲损耗的影响。仿真结果表明,通过改变弯曲半径和芯径,弯曲损耗从10-5 dB/km降低到10-12 dB/km。由于具有较低的弯曲损耗,这些PCF结构可以用于光学技术的应用,包括电信和传感应用。
{"title":"Analysis of bending effects on hexagonal and rectangular photonic crystal fiber","authors":"Tamal Sarkar, Mofijur Rahman, Anamika Dey","doi":"10.1109/ICECE.2014.7026912","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026912","url":null,"abstract":"This paper presents photonic crystal fibers (PCF) based on hexagonal and rectangular structures designed to be operated in a range of wavelength 1.3 to 1.7 μm and effects of various parameters on bending loss of the different structured index guiding PCFs have been investigated. According to simulation, bending loss is reduced down to 10-12 dB/km from 10-5 dB/km by changing bending radius and core diameters.Due to having low bending loss, these PCF structures can be used in applications of optical technologies including telecommunication and sensing applications.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114488976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100) 面向大块单晶硅柔性存储器的CMOS兼容通用批处理工艺(100)
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026822
M. Ghoneim, J. Rojas, A. Kutbee, A. Hanna, M. Hussain
Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.
当今主流的柔性电子研究是通过在有机衬底上放置有机器件来完全取代硅,或者通过将无机器件转移到有机衬底上来部分取代硅。在这项工作中,我们提出了一种实用的方法,结合了有机衬底所需的灵活性和硅半导体工业固有的超高集成密度,将大块/不灵活的硅转化为超薄单晶织物。我们还展示了这种方法在实现完全柔性电子系统方面的有效性。此外,我们还提供了在柔性硅结构上制造各种存储器件的进展报告,以及在硅结构上制造完全柔性存储模块的见解。
{"title":"CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)","authors":"M. Ghoneim, J. Rojas, A. Kutbee, A. Hanna, M. Hussain","doi":"10.1109/ICECE.2014.7026822","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026822","url":null,"abstract":"Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"90 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116302018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
State space least mean fourth algorithm 状态空间最小平均第四算法
Pub Date : 2014-12-01 DOI: 10.1109/ICECE.2014.7026844
Arif Ahmed, M. Moinuddin, U. M. Al-Saggaf
Adaptive filters generally employed for estimation purposes require high computational power when it comes to real time estimation. Therefore, in this paper we propose a computationally light yet effective estimation algorithm based on state space model. Our algorithm has been employed successfully in linear and non linear state space model based estimation problems.We investigate few examples to demonstrate the novelty of our algorithm by comparison with few existing algorithms in presence of non Gaussian noise namely uniform noise. More specifically, the state space normalized least mean squares and the Kalman filter has been compared with our algorithm.
通常用于估计目的的自适应滤波器在进行实时估计时需要很高的计算能力。因此,本文提出了一种基于状态空间模型的计算量小而有效的估计算法。该算法已成功应用于基于线性和非线性状态空间模型的估计问题。我们研究了几个例子,通过与现有的几种存在非高斯噪声即均匀噪声的算法进行比较,来证明我们的算法的新颖性。具体来说,将状态空间归一化最小均二乘法和卡尔曼滤波与我们的算法进行了比较。
{"title":"State space least mean fourth algorithm","authors":"Arif Ahmed, M. Moinuddin, U. M. Al-Saggaf","doi":"10.1109/ICECE.2014.7026844","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026844","url":null,"abstract":"Adaptive filters generally employed for estimation purposes require high computational power when it comes to real time estimation. Therefore, in this paper we propose a computationally light yet effective estimation algorithm based on state space model. Our algorithm has been employed successfully in linear and non linear state space model based estimation problems.We investigate few examples to demonstrate the novelty of our algorithm by comparison with few existing algorithms in presence of non Gaussian noise namely uniform noise. More specifically, the state space normalized least mean squares and the Kalman filter has been compared with our algorithm.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123916612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
期刊
8th International Conference on Electrical and Computer Engineering
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1